Qinghua Zhao
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Qinghua Zhao has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
- Tao Wang
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an, 710072, P. R. China
2 shared publications - Wanqi Jie
State Key Laboratory of Solidification Processing and the MIIT Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University, Xian, China
2 shared publications - Yong Xie
Xidian University
2 shared publications - Bingqi Chen
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
1 shared publication - Fei Ma
State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, China
1 shared publication - Jie Li
State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China
1 shared publication
Latest Publications
- Open Access
Lattice Vibration of Layered GaTe Single Crystals
The effect of interlayer interaction on in-layer structure of laminar GaTe crystals was studied according to the lattice vibration using micro-Raman analysis. The results were also confirmed by the first principle calculations. Accordingly, the relationship between lattice vibration and crystal structure was established. Ten peaks were observed in the micro-Raman spectra from 100 cm−1 to 300 cm−1. Eight of them fit Raman-active vibration modes and the corresponding displacement vectors were calculated, which proved that the two modes situated at 128.7 cm−1 and 145.7 cm−1 were related to the lattice vibration of GaTe, instead of impurities or defects. Davydov splitting in GaTe was identified and confirmed by the existence of the other two modes, conjugate modes, at 110.7 cm−1 (∆ω = 33.1 cm−1) and 172.5 cm−1 (∆ω = 49.5 cm−1), indicates that the weak interlayer coupling has a significant effect on lattice vibrations in the two-layer monoclinic unit cell. Our results further proved the existence of two layers in each GaTe unit cell.
Open AccessLattice Vibration of Layered GaTe Single Crystals
The effect of interlayer interaction on in-layer structure of laminar GaTe crystals was studied according to the lattice vibration using micro-Raman analysis. The results were also confirmed by the first principle calculations. Accordingly, the relationship between lattice vibration and crystal structure was established. Ten peaks were observed in the micro-Raman spectra from 100 cm−1 to 300 cm−1. Eight of them fit Raman-active vibration modes and the corresponding displacement vectors were calculated, which proved that the two modes situated at 128.7 cm−1 and 145.7 cm−1 were related to the lattice vibration of GaTe, instead of impurities or defects. Davydov splitting in GaTe was identified and confirmed by the existence of the other two modes, conjugate modes, at 110.7 cm−1 (∆ω = 33.1 cm−1) and 172.5 cm−1 (∆ω = 49.5 cm−1), indicates that the weak interlayer coupling has a significant effect on lattice vibrations in the two-layer monoclinic unit cell. Our results further proved the existence of two layers in each GaTe unit cell.
- Open Access
High-Quality GaSe Single Crystal Grown by the Bridgman Method
A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the studied GaSe sample is symmetric and the Full Width at Half Maximum (FWHM) is only 46 arcs, which is the smallest value ever reported for GaSe crystals. The IR-transmittance is about 66% in the range from 500 to 4000 cm−1. The photoluminescence spectrum at 9.2 K shows a symmetric and sharp excition peak in 2.1046 eV. The results indicate that the as-grown GaSe crystal is of high crystalline quality. The as-grown -GaSe crystal has a p-type conductance with the resistivity of 103 Ω/cm, and the Hall mobility is ~25 cm2 V−1 s−1. Few-layer GaSe crystals were prepared through mechanical exfoliation from this high-quality crystal sample. Few-layer GaSe-based photodetectors were fabricated, which exhibit an on/off ratio of 104, a field-effect differential mobility of 0.4 cm2 V−1 s−1, and have a fast response time less than 60 ms under light illumination.Open AccessHigh-Quality GaSe Single Crystal Grown by the Bridgman Method
A high-quality GaSe single crystal was grown by the Bridgman method. The X-ray rocking curve for the studied GaSe sample is symmetric and the Full Width at Half Maximum (FWHM) is only 46 arcs, which is the smallest value ever reported for GaSe crystals. The IR-transmittance is about 66% in the range from 500 to 4000 cm−1. The photoluminescence spectrum at 9.2 K shows a symmetric and sharp excition peak in 2.1046 eV. The results indicate that the as-grown GaSe crystal is of high crystalline quality. The as-grown -GaSe crystal has a p-type conductance with the resistivity of 103 Ω/cm, and the Hall mobility is ~25 cm2 V−1 s−1. Few-layer GaSe crystals were prepared through mechanical exfoliation from this high-quality crystal sample. Few-layer GaSe-based photodetectors were fabricated, which exhibit an on/off ratio of 104, a field-effect differential mobility of 0.4 cm2 V−1 s−1, and have a fast response time less than 60 ms under light illumination.