Manju K. Chattopadhyay

ScAlN/GaN HEMTs have attracted significant attention for potential high-power and high-frequency applications due to their enhanced polarization properties. This work presents a physics-based analytical I–V model incorporating polarization-induced charge, threshold voltage, and carrier transport effects. The model captures the influence of Sc mole fraction and barrier thickness on device performance. Results show that Sc incorporation enhances polarization and shifts the threshold voltage toward positive values, indicating its potential for normally-OFF device design. However, higher Sc content degrades current due to increased scattering and reduced crystal stability. The model shows good agreement with experimental data and supports efficient device design and optimization.

1. A DT is an advanced technology that integrates the most recent developments in Sensor, IoT, Big Data, Cloud computing, and AI to create the virtual representation of physical system, enhancing c...

A temperature‐dependent current–voltage model is presented to analyze the performance of quaternary AlInGaN/GaN‐based high electron‐mobility transistors (HEMTs) as pH sensors. Using the model, the pH sensing characteristics are evaluated for a temperature range of 100 to 500 K. It is observed that with an increase in the pH values, the drain current falls and the threshold voltage increases. A similar pattern in the drain current and threshold voltage is also observed as a function of the rising temperature. The average value of pH sensitivity is found to be 58.3 mV pH ⁻¹ at T = 300K (room temperature) which is close to the Nernstian point 59 mV pH ⁻¹ . The calculations at pH levels from acidic pH 2 to basic pH 12, agree well with the available experimental data. The composition Al _0.75 In _0.2 Ga _0.05 N has the maximum sensitivity when compared to the other material compositions at different temperatures across all pH levels for a barrier width of 20 nm.

Summary: The cluster networking protocols are the roots that embed intelligent decision‐making and enhance the lifespan of wireless sensor networks (WSNs). Wireless sensors with limited capabilities face several challenges due to the heterogeneous application environments. Especially, the mobility‐incorporated sensors in most situations trouble the cluster network's robustness. Many cluster networking protocols have been presented in the past to enhance the network lifespan and data delivery ratio. However, they lack a dedicated and efficient mechanism for mobility assistance, an adequate cluster management process and cluster head selection criteria. To overcome these issues and for the uniform energy load distribution, we propose a mobility‐compatible cache controlled cluster networking protocol (MC‐CCCNP) in this paper. It is an energy‐efficient cluster networking protocol that supports sensor movement. Network resource management and routing are controlled distributively by an optimal number of cache nodes. It defines a new strategy for cache node deployment based on neighbour density as well as a weight formula for cluster head selection and cluster formation based on the residual energy, the distance to the base station and the node velocity. It also includes techniques for detaching and reconnecting a mobile node to an appropriate cluster cache if it crosses the cluster boundary. We simulate and compare the performance of our protocol with the centralised energy‐efficient clustering routing, energy‐efficient mobility‐based cluster head selection protocol and dual tier cluster‐based routing protocols over different network configurations with varying mobility, scalability and heterogeneity. The MC‐CCCNP showed remarkable improvements in energy utilisation uniformity and energy consumption. With the improved network lifespan, it also maintains a higher data throughput rate of 95% or more in almost all network configurations.

Advantages like working at high speed, scalability, and lower power consumption make QCA technology more feasible than modern CMOS technology. QCA Technology uses electrons’ Coulombic interaction and polarization to represent binary information 0 and 1. The present paper proposes a novel XOR Gate and a Half Adder design and uses them to implement a new 2x2 Vedic Multiplier on QCA technology. A 2x2 Vedic Multiplier multiplies two inputs, of two bits each, using Urdhva-Tiryakbhyam Vedic Sutra. The proposed circuit has a reduced cell count and Quantum cost compared Co-planar Vedic Multipliers to available in the literature. QCADesigner 2.0.3 is used for the simulation and verification of all three proposed circuits.