Christopher Hardly Joseph

This paper details the extraction of possible equivalent circuits over a wide band for an Electric-LC resonator in two technological configurations: a) a multilayer stack working at mm-wave and b) a WR90 waveguide in the X band. The proposed equivalent circuits are based on a T structure or on only one shunt susceptance with two transmission lines. An identification process applied to the frequency behavior of the reactance/susceptance is used to obtain a more appropriate and efficient equivalent circuit, giving a physical meaning, if any, to each inductance, capacitance or resonator tank contained in the proposed circuits. Finally, experimental results are obtained for the ELC in the WR90 waveguide and used to identify an equivalent circuit able to represent also the effect of the material losses.

In this work, we present a metal-insulator-metal (MIM) diode, based on quantum tunnelling phenomena. Its model is based on a multilevel modelling approach consisting of atomistic and continuum simulations, fully validated by extensive measurements. The MIM structure comprises a hafnium oxide (or hafnia, HfO₂) dielectric layer, less than 4 nm thick and a square contact area of only 4 μm², placed between two metallic electrodes, namely platinum as the source and titanium as the drain. The current–voltage (I–V) curve has been estimated by Density Functional Theory (DFT) calculations through an optimisation of the interfaces between metals and monoclinic HfO₂. The dielectric parameters arising from ab initio computations have then been used as inputs for the successive circuit and electromagnetic simulations. Finally, the multilevel model has been validated with great accuracy, first measuring the I–V characteristics by applying a drain-source voltage between −1 V and +1 V, and then extracting the scattering parameters up to 40 GHz, thus demonstrating that DFT and circuit/electromagnetic simulations match almost perfectly the experimental ones. These outcomes represent the first study of such nanoscale devices investigated by means of a rigorous atomistic-to-continuum approach, providing invaluable information in order to improve fabrication and correctly assess the macroscale performance of nanoelectronics systems.

We present a method for assessing the spreading resistance of electrodes immersed in a lossy medium, useful for the calibration of scanning microwave microscopy and also in other fields such as fluidic sensors.

In this work, a simple and efficient circuit modelling of metamaterial structures, providing a compact circuit able to describe accurately the device over a large bandwidth of operation is proposed. The equivalent circuit model is obtained by the identification process of the load in terms of shunt branches constituted by reactive elements that can be both positive and negative. The circuit model is validated by analysing the Split Ring Resonator (SRR) structure. The presence of negative elements in the non-Foster load are transformed to positive reactive elements by converting the load from shunt to series. Unlike the T or Π circuit models, using this approach a circuit model can be constructed directly from the scattering parameters and valid for any circuit topologies.

The inverted scanning microwave microscope (iSMM) is a recently developed variety of scanning microprobe microscopes. Similar to a scanning microwave microscope (SMM), the iSMM is sensitive to not only surface structure, but also electromagnetic properties below the surface. Different from the SMM, the iSMM can be converted from any scanning probe microscope, such as an atomic force microscope (AFM) and a scanning tunneling microscope, with a simple metal probe to outperform the SMM in terms of ruggedness, bandwidth, sensitivity, and dynamic range. This letter reports the first iSMM images of a vital mitochondrion in an isotonic glucose solution. Compared to the AFM and SMM, the iSMM offers more insights into the mitochondrion. This shows the potential of iSMM for noninvasive and label-free imaging and characterization of subcellular structures.

A MM-loaded sub-THz on-chip antenna with a narrow beamwidth, 9 dB gain and a simulated peak efficiency of 76% at the center frequency of 300 GHz is presented. By surrounding the antenna with a single MM-cell ring defined solely on the top metal of the back-end of line, an efficient suppression of the surface waves is obtained. The on-chip antenna has been designed using IHPs 130 nm SiGe BiCMOS technology with a 7-layer metallization stack, combined with the local backside etching process aimed to creating an air cavity which is then terminated by a reflective plane. By comparing the measured MM-loaded antenna performances to its non-MM-loaded counterpart, an enhanced integrity of the main lobe due to the MM-cells shielding effect can be observed. An excellent agreement between the simulated and measured performances has been found, which makes the MM-loaded antennas a valid alternative for the upcoming next-generation sub-THz transceivers.

We have demonstrated the capabilities of the scanning microwave microscopy (SMM) technique for measuring ferromagnetic resonance (FMR) spectra in nanometric areas of magnetic samples. The technique is evaluated using three different samples, including a yttrium iron garnet (YIG) polycrystalline bulk sample and a thick YIG film grown by liquid phase epitaxy (LPE). Patterned permalloy (Py) micromagnetic dots have been characterized to assess the performance for imaging applications of the technique, measuring the variation of the magnetic properties of the sample along its surface. The proposed technique may pave the way for the development of high spatially resolved mapping of magnetostatic modes in different nanomagnetic and micromagnetic structures.

Two-dimensional materials, such as transition-metal dichalcogenides (TMDs), are attractive candidates for sensing applications due to their high surface-to-volume ratio, chemically active edges, and good electrical properties. However, their electrical response to humidity is still under debate and experimental reports remain inconclusive. For instance, in different studies, the impedance of MoS₂-based sensors has been found to either decrease or increase with increasing humidity, compromising the use of MoS₂ for humidity sensing. In this work, we focus on understanding the interaction between water and TMDs. We fabricated and studied humidity sensors based on MoS₂ and WS₂ coated with copper chloride and silver nitrate. The devices exhibited high chemical stability and excellent humidity sensing performance in relative humidity between 4 and 80%, with response and recovery times of 2 and 40 s, respectively. We have systematically investigated the humidity response of the materials as a function of the type and amount of induced metal salt and observed the reverse action of sensing mechanisms. This phenomenon is explained based on a detailed structural analysis of the samples considering the Grotthuss mechanism in the presence of charge trapping, which was represented by an appropriate lumped-element model. Our findings open up a possibility to tune the electrical response in a facile manner and without compromising the high performance of the sensor. They offer an insight into the time-dependent performance and aging of the TMD-based sensing devices.