Xintong Lyu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Xintong Lyu has a total of 19 co-authors. Here are the top co-authors by number of shared publications:
- Jin Wang
The Ohio State University
4 shared publications - Boxue Hu
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA
3 shared publications - He Li
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA
3 shared publications - Sandeep Bala
ABB Corporate Research, Raleigh, NC, USA
2 shared publications - Diang Xing
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA
1 shared publication Dihao Ma
Center for High Performance Power Electronics, The Ohio State University, Columbus, OH, 43210, USA
1 shared publication
Latest Publications
- 23 January 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 35 (9) , 8926-8933
A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT
- 23 January 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 35 (9) , 8926-8933
A Reliable Ultrafast Short-Circuit Protection Method for E-Mode GaN HEMT
- 20 June 2019
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Emerging and Selected Topics in Power Electronics
- Vol. 7 (3) , 1566-1573
Dynamic Voltage Balancing for the High-Voltage SiC Super-Cascode Power Switch
Presented in this paper is an optimization method to improve the dynamic performance of high voltage super-cascode power switches (SCPS) by implementing silicon carbide (SiC) junction field effect transistor (JFET). The basic operation principle of SCPS is explained at the beginning of the paper. Equivalent circuit models are outlined next, with equations describing the voltage distribution among each SiC JFET during switching transients. Based on the sensitivity analysis, a component optimization method for balancing the SCPS internal voltage is proposed, which effectively eliminates the overvoltage. This significantly reduces the switching loss and the chance of the diode avalanche. Compared with the non-optimized case, the turn-on loss of the SCPS is reduced to 8.85%, and the turn-off loss reduces to 48.4%.
- 20 June 2019
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Emerging and Selected Topics in Power Electronics
- Vol. 7 (3) , 1566-1573
Dynamic Voltage Balancing for the High-Voltage SiC Super-Cascode Power Switch
Presented in this paper is an optimization method to improve the dynamic performance of high voltage super-cascode power switches (SCPS) by implementing silicon carbide (SiC) junction field effect transistor (JFET). The basic operation principle of SCPS is explained at the beginning of the paper. Equivalent circuit models are outlined next, with equations describing the voltage distribution among each SiC JFET during switching transients. Based on the sensitivity analysis, a component optimization method for balancing the SCPS internal voltage is proposed, which effectively eliminates the overvoltage. This significantly reduces the switching loss and the chance of the diode avalanche. Compared with the non-optimized case, the turn-on loss of the SCPS is reduced to 8.85%, and the turn-off loss reduces to 48.4%.
- 2 November 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industry Applications
- Vol. 55 (2) , 1807-1816
Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions
This paper presents the short-circuit behavior and degradation of 650-V/60-A E-mode GaN HEMTs under various test conditions. First, the paper introduces the basic information of device, test method, and platform. Subsequently, single pulse, 10 $\mu$ s short-circuit tests are performed from 50 V to 400 V to extract the typical behavior of devices. Both short-circuit current self-regulation phenomenon and quick failure have been observed. Simultaneously, the device short-circuit behavior at various gate drive voltages and temperatures have been explored to identify the protection condition. Then, repetitive short-circuit tests have been performed to reveal device degradation trends. As a result, their output current reduction and gate-to-source threshold voltage shift have occurred. This work shows the critical need to improve the robustness of this type of GaN HEMT from the device and circuit perspectives.- 2 November 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industry Applications
- Vol. 55 (2) , 1807-1816
Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions
This paper presents the short-circuit behavior and degradation of 650-V/60-A E-mode GaN HEMTs under various test conditions. First, the paper introduces the basic information of device, test method, and platform. Subsequently, single pulse, 10 $\mu$ s short-circuit tests are performed from 50 V to 400 V to extract the typical behavior of devices. Both short-circuit current self-regulation phenomenon and quick failure have been observed. Simultaneously, the device short-circuit behavior at various gate drive voltages and temperatures have been explored to identify the protection condition. Then, repetitive short-circuit tests have been performed to reveal device degradation trends. As a result, their output current reduction and gate-to-source threshold voltage shift have occurred. This work shows the critical need to improve the robustness of this type of GaN HEMT from the device and circuit perspectives.- 1 September 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 2420-2427
A Survey on Recent Advances of Medium Voltage Silicon Carbide Power Devices
Medium voltage (MV) Silicon Carbide (SiC) power devices have become available as engineering samples. Recent studies show that they outperform their Silicon (Si) counterparts regarding voltage blocking capability, specific on-state resistance, switching speed and maximum allowable junction temperature. It is projected that MV SiC power devices will bring revolutionary changes in medium and high voltage applications such as traction drives for locomotives, industrial motor drives, utility power transmission systems, etc. This paper presents a summary of recent advances in MV SiC power devices, including MOSFETs, IGBTs, GTOs and super-cascode devices. Technical challenges of their applications such as device packaging, gate drive design and gate drive auxiliary power supply design are discussed. Testing results of three state-of-the-art MV SiC devices, including a 4 kV, 5 A discrete SiC MOSFET, a 4.5 kV, 40 A SiC super-cascode device and a 10 kV, 40 A SiC MOSFET power module, are presented as examples.
- 1 September 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 2420-2427
A Survey on Recent Advances of Medium Voltage Silicon Carbide Power Devices
Medium voltage (MV) Silicon Carbide (SiC) power devices have become available as engineering samples. Recent studies show that they outperform their Silicon (Si) counterparts regarding voltage blocking capability, specific on-state resistance, switching speed and maximum allowable junction temperature. It is projected that MV SiC power devices will bring revolutionary changes in medium and high voltage applications such as traction drives for locomotives, industrial motor drives, utility power transmission systems, etc. This paper presents a summary of recent advances in MV SiC power devices, including MOSFETs, IGBTs, GTOs and super-cascode devices. Technical challenges of their applications such as device packaging, gate drive design and gate drive auxiliary power supply design are discussed. Testing results of three state-of-the-art MV SiC devices, including a 4 kV, 5 A discrete SiC MOSFET, a 4.5 kV, 40 A SiC super-cascode device and a 10 kV, 40 A SiC MOSFET power module, are presented as examples.