Hee-Jung Choi
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Hee-Jung Choi has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
- Kyoung-Kook Kim
Department of IT Semiconductor Convergence Engineering, Research Institute of Advanced Convergence Technology, Tech University of Korea, Siheung 15073, Republic of Korea
3 shared publications - Semi Oh
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA
3 shared publications - Soon-Hwan Kwon
Department of Advanced Convergence Technology, and Research Institute of Advanced Convergence Technology, Korea Polytechnic University, 237 Sangidaehak-ro, Siheung-si 15073, Korea
3 shared publications - Won-Seok Lee
Department of Advanced Convergence Technology, and Research Institute of Advanced Convergence Technology, Korea Polytechnic University, 237 Sangidaehak-ro, Siheung-si 15073, Korea
3 shared publications - Beom-Rae Noh
Department of Advanced Convergence Technology, and Research Institute of Advanced Convergence Technology, Korea Polytechnic University, 237 Sangidaehak-ro, Siheung-si 15073, Korea
2 shared publications - Kwang-Gyun Im
Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Gyeonggi-do 15073, Korea
2 shared publications
Latest Publications
- Open Access
- 26 March 2020
- Published by MDPI AG in Micromachines
- Vol. 11 (4) , 346
Self-Aligned Hierarchical ZnO Nanorod/NiO Nanosheet Arrays for High Photon Extraction Efficiency of GaN-Based Photonic Emitter
Advancements in nanotechnology have facilitated the increased use of ZnO nanostructures. In particular, hierarchical and core–shell nanostructures, providing a graded refractive index change, have recently been applied to enhance the photon extraction efficiency of photonic emitters. In this study, we demonstrate self-aligned hierarchical ZnO nanorod (ZNR)/NiO nanosheet arrays on a conventional photonic emitter (C-emitter) with a wavelength of 430 nm. These hierarchical nanostructures were synthesized through a two-step hydrothermal process at low temperature, and their optical output power was approximately 17% higher than that of ZNR arrays on a C-emitter and two times higher than that of a C-emitter. These results are due to the graded index change in refractive index from the GaN layer inside the device toward the outside as well as decreases in the total internal reflection and Fresnel reflection of the photonic emitter.
- 26 March 2020
- Published by MDPI AG in Micromachines
- Vol. 11 (4) , 346
Open AccessSelf-Aligned Hierarchical ZnO Nanorod/NiO Nanosheet Arrays for High Photon Extraction Efficiency of GaN-Based Photonic Emitter
Advancements in nanotechnology have facilitated the increased use of ZnO nanostructures. In particular, hierarchical and core–shell nanostructures, providing a graded refractive index change, have recently been applied to enhance the photon extraction efficiency of photonic emitters. In this study, we demonstrate self-aligned hierarchical ZnO nanorod (ZNR)/NiO nanosheet arrays on a conventional photonic emitter (C-emitter) with a wavelength of 430 nm. These hierarchical nanostructures were synthesized through a two-step hydrothermal process at low temperature, and their optical output power was approximately 17% higher than that of ZNR arrays on a C-emitter and two times higher than that of a C-emitter. These results are due to the graded index change in refractive index from the GaN layer inside the device toward the outside as well as decreases in the total internal reflection and Fresnel reflection of the photonic emitter.
- Open Access
- 4 March 2020
- Published by MDPI AG in Nanomaterials
- Vol. 10 (3) , 462
Ultraviolet Photoactivated Room Temperature NO2 Gas Sensor of ZnO Hemitubes and Nanotubes Covered with TiO2 Nanoparticles
Prolonged exposure to NO2 can cause lung tissue inflammation, bronchiolitis fibrosa obliterans, and silo filler’s disease. In recent years, nanostructured semiconducting metal oxides have been widely used to fabricate gas sensors because of their unique structure and surface-to-volume ratio compared to layered materials. In particular, the different morphologies of ZnO-based nanostructures significantly affect the detection property of NO2 gas sensors. However, because of the large interaction energy of chemisorption (1–10 eV), metal oxide-based gas sensors are typically operated above 100 °C, overcoming the energy limits to attain high sensitivity and fast reaction. High operating temperature negatively affects the reliability and durability of semiconductor-based sensors; at high temperature, the diffusion and sintering effects at the metal oxide grain boundaries are major factors causing undesirable long-term drift problems and preventing stability improvements. Therefore, we demonstrate NO2 gas sensors consisting of ZnO hemitubes (HTs) and nanotubes (NTs) covered with TiO2 nanoparticles (NPs). To operate the gas sensor at room temperature (RT), we measured the gas-sensing properties with ultraviolet illumination onto the active region of the gas sensor for photoactivation instead of conventional thermal activation by heating. The performance of these gas sensors was enhanced by the change of barrier potential at the ZnO/TiO2 interfaces, and their depletion layer was expanded by the NPs formation. The gas sensor based on ZnO HTs showed 1.2 times higher detection property than those consisting of ZnO NTs at the 25 ppm NO2 gas.
- 4 March 2020
- Published by MDPI AG in Nanomaterials
- Vol. 10 (3) , 462
Open AccessUltraviolet Photoactivated Room Temperature NO2 Gas Sensor of ZnO Hemitubes and Nanotubes Covered with TiO2 Nanoparticles
Prolonged exposure to NO2 can cause lung tissue inflammation, bronchiolitis fibrosa obliterans, and silo filler’s disease. In recent years, nanostructured semiconducting metal oxides have been widely used to fabricate gas sensors because of their unique structure and surface-to-volume ratio compared to layered materials. In particular, the different morphologies of ZnO-based nanostructures significantly affect the detection property of NO2 gas sensors. However, because of the large interaction energy of chemisorption (1–10 eV), metal oxide-based gas sensors are typically operated above 100 °C, overcoming the energy limits to attain high sensitivity and fast reaction. High operating temperature negatively affects the reliability and durability of semiconductor-based sensors; at high temperature, the diffusion and sintering effects at the metal oxide grain boundaries are major factors causing undesirable long-term drift problems and preventing stability improvements. Therefore, we demonstrate NO2 gas sensors consisting of ZnO hemitubes (HTs) and nanotubes (NTs) covered with TiO2 nanoparticles (NPs). To operate the gas sensor at room temperature (RT), we measured the gas-sensing properties with ultraviolet illumination onto the active region of the gas sensor for photoactivation instead of conventional thermal activation by heating. The performance of these gas sensors was enhanced by the change of barrier potential at the ZnO/TiO2 interfaces, and their depletion layer was expanded by the NPs formation. The gas sensor based on ZnO HTs showed 1.2 times higher detection property than those consisting of ZnO NTs at the 25 ppm NO2 gas.
- Open Access
- 9 August 2019
- Published by MDPI AG in Micromachines
- Vol. 10 (8) , 528
Enhanced Photon Emission Efficiency Using Surface Plasmon Effect of Pt Nanoparticles in Ultra-Violet Emitter
We demonstrate the surface plasmon (SP)-enhanced ultraviolet (UV) emitter using Pt nanoparticles (NPs). The UV emitter is hole-patterned on the p-AlGaN layer to consider the penetration depth of Pt NPs. The Pt NPs with sizes under 50 nm are required to realize the plasmonic absorption in UV wavelength. In this study, we confirm the average Pt NP sizes of 10 nm, 20 nm, and 25 nm, respectively, at an annealing temperature of 600 °C. The absorption of annealed Pt NPs is covered with the 365-nm wavelength. The electroluminescence intensity of SP-UV is 70% higher than that of reference UV emitter without hole-patterns and Pt NPs. This improvement can be attributed to the increase of spontaneous emission rate through resonance coupling between the excitons in multiple quantum wells and Pt NPs deposited on the p-AlGaN layer.
- 9 August 2019
- Published by MDPI AG in Micromachines
- Vol. 10 (8) , 528
Open AccessEnhanced Photon Emission Efficiency Using Surface Plasmon Effect of Pt Nanoparticles in Ultra-Violet Emitter
We demonstrate the surface plasmon (SP)-enhanced ultraviolet (UV) emitter using Pt nanoparticles (NPs). The UV emitter is hole-patterned on the p-AlGaN layer to consider the penetration depth of Pt NPs. The Pt NPs with sizes under 50 nm are required to realize the plasmonic absorption in UV wavelength. In this study, we confirm the average Pt NP sizes of 10 nm, 20 nm, and 25 nm, respectively, at an annealing temperature of 600 °C. The absorption of annealed Pt NPs is covered with the 365-nm wavelength. The electroluminescence intensity of SP-UV is 70% higher than that of reference UV emitter without hole-patterns and Pt NPs. This improvement can be attributed to the increase of spontaneous emission rate through resonance coupling between the excitons in multiple quantum wells and Pt NPs deposited on the p-AlGaN layer.