JMJoshua Mutch

Joshua Mutch

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Joshua Mutch has a total of 42 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Open Access

    Reentrant Landau levels in a Dirac topological insulator

    by C. Kaufmann Ribeiro, J. C. Mutch, Q. Jiang, J. P. Ayres-Sims, K. Rubi, C. A. Mizzi, E. A. Peterson, D. Bulmash, J. Singleton, N. Harrison, et al.

    Pentatellurides have emerged as an ideal platform for exploring topological phase transitions and their electronic properties. Positioned at the boundary between a strong and weak topological insulator phase, their low carrier density and linear dispersion enable a three-dimensional Dirac Hamiltonian description. A complete understanding of these materials remains elusive due to unexplained sample variability. In particular, these materials have been shown to host anomalous magnetoresistance including \(\log (B)\)-periodic signals, non-\(\log (B)\) and non-1/B oscillations, in addition to the conventional 1/B quantum oscillations. Differing interpretations invoke many-body effects and there is currently no unified understanding of these oscillations. Here we report non-1/B oscillations in ZrTe5 down to 700 mK and up to 60 T, with a temperature and magnetic field dependence that violates the Lifshitz–Kosevich framework. We show that nonlinear Landau-level back-bending, arising from the interplay of cyclotron energy and strong spin-orbit coupling in a non-interacting Dirac system, captures all observed regimes and provides a foundation for understanding the electron dynamics of Dirac topological insulators beyond the quantum limit.

  • Open Access

    Continuously tunable uniaxial strain control of van der Waals heterostructure devices

    by Zhaoyu Liu, Xuetao Ma, John Cenker, Jiaqi Cai, Zaiyao Fei, Paul Malinowski, Joshua Mutch, Yuzhou Zhao, Kyle Hwangbo, Zhong Lin, et al.

    Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to −0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.


  • The transport–structural correspondence across the nematic phase transition probed by elasto X-ray diffraction

    by Joshua J. Sanchez, Paul Malinowski, Joshua Mutch, Jian Liu, J.-W. Kim, Philip J. Ryan, Jiun-Haw Chu

    Electronic nematicity in iron pnictide materials is coupled to both the lattice and the conducting electrons, which allows both structural and transport observables to probe nematic fluctuations and the order parameter. Here we combine simultaneous transport and X-ray diffraction measurements with in-situ tunable strain (elasto X-ray diffraction) to measure the temperature dependence of the shear modulus and elastoresistivity above the nematic transition and the spontaneous orthorhombicity and resistivity anisotropy below the nematic transition, all within a single sample of Ba(Fe0.96Co0.04)2As2. The ratio of transport to structural quantities is nearly temperature independent over a 74 K range and agrees between the ordered and disordered phases. These results show that elasto X-ray diffraction is a powerful technique to probe the nemato-elastic and nemato-transport couplings, which have important implications to the nearby superconductivity. It also enables the measurement in the large strain limit, where the breakdown of the mean-field description reveals the intertwined nature of nematicity.


  • Open Access

    Apparatus design for measuring of the strain dependence of the Seebeck coefficient of single crystals

    by Tiema Qian, Joshua Mutch, Lihua Wu, Preston Went, Qianni Jiang, Paul Malinowski, Jihui Yang, Jiun-Haw Chu

    We present the design and construction of an apparatus that measures the Seebeck coefficient of single crystals under in situ tunable strain at cryogenic temperatures. A home-built three piezostack apparatus applies uni-axial stress to a single crystalline sample and modulates anisotropic strain up to 0.7%. An alternating heater system and cernox sensor thermometry measure the Seebeck coefficient along the uniaxial stress direction. To demonstrate the efficacy of this apparatus, we applied uniaxial stress to detwin single crystals of BaFe2As2 in the orthorhombic phase. The obtained Seebeck coefficient anisotropy is in good agreement with previous measurements using a mechanical clamp.


  • Open Access

    Evidence for a strain-tuned topological phase transition in ZrTe 5

    by Joshua Mutch, Wei-Chih Chen, Preston Went, Tiema Qian, Ilham Zaky Wilson, Anton Andreev, Cheng-Chien Chen, Jiun-Haw Chu

    In situ strain is used to induce a topological phase transition in single-crystal ZrTe 5 .