Shoya Sakamoto
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
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Shoya Sakamoto has a total of 349 co-authors. Here are the top co-authors by number of shared publications:
- Shinji Miwa
The University of Tokyo
30 shared publications Atsushi Fujimori
Department of Physics, University of Tokyo, Bunkyo, Tokyo 113-0033, Japan
15 shared publicationsKeisuke Ikeda
The University of Tokyo
14 shared publications- Atsushi Fujimori
National Synchrotron Radiation Research Center, Hsinchu, Taiwan
12 shared publications Yosuke Nonaka
The University of Tokyo
11 shared publications- Yuki K. Wakabayashi
NTT Basic Research Laboratories
10 shared publications
Latest Publications
- 21 September 2026
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 26 (39) , 13511-13516
Near-Electrode Diffusion Dynamics Govern Chirality-Induced Spin Selectivity in an Electrochemical Cell
Chirality-induced spin selectivity (CISS) is a phenomenon resulting from the interaction between chiral molecules and electron spin. One example is chirality-induced magnetoconductance (MC), in which the electrical conduction through a molecule–ferromagnet junction depends on the molecular chirality and the magnetization direction of the ferromagnet. In this study, we investigate the microscopic mechanism of CISS in an electrochemical cell containing a chiral camphorsulfonic acid electrolyte and a ferromagnetic Ni electrode. We find that the MC effect strongly depends on electrode size, which we attribute to a crossover between one-dimensional planar and three-dimensional radial diffusion. Pronounced MC at large electrodes highlights the importance of the one-dimensional planar diffusion regime. This suggests that magnetization reversal modifies exchange coupling between chiral molecules and the ferromagnet, thereby altering the near-electrode concentration gradient rather than the chemical reaction rate per molecule. These findings identify near-electrode diffusion dynamics as a key factor in CISS-related electrochemical responses.
- 21 September 2026
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 26 (39) , 13511-13516
Near-Electrode Diffusion Dynamics Govern Chirality-Induced Spin Selectivity in an Electrochemical Cell
Chirality-induced spin selectivity (CISS) is a phenomenon resulting from the interaction between chiral molecules and electron spin. One example is chirality-induced magnetoconductance (MC), in which the electrical conduction through a molecule–ferromagnet junction depends on the molecular chirality and the magnetization direction of the ferromagnet. In this study, we investigate the microscopic mechanism of CISS in an electrochemical cell containing a chiral camphorsulfonic acid electrolyte and a ferromagnetic Ni electrode. We find that the MC effect strongly depends on electrode size, which we attribute to a crossover between one-dimensional planar and three-dimensional radial diffusion. Pronounced MC at large electrodes highlights the importance of the one-dimensional planar diffusion regime. This suggests that magnetization reversal modifies exchange coupling between chiral molecules and the ferromagnet, thereby altering the near-electrode concentration gradient rather than the chemical reaction rate per molecule. These findings identify near-electrode diffusion dynamics as a key factor in CISS-related electrochemical responses.
- Open Access
- 16 September 2026
- Published by Wiley in Advanced Electronic Materials
Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque
Artificially‐designed magnetic hetero‐structures with an antiferromagnetic alignment of magnetization in magnetic layers, which exploit the interlayer exchange coupling (IEC) through a non‐magnetic layer, are called synthetic antiferromagnets (SyAF) and are a treasure trove of functionalities for spintronics applications. In SyAF spintronics, a non‐magnetic layer simultaneously providing IEC and large electric current‐induced torque originating from spin‐orbit interaction, called spin‐orbit torque (SOT), has been eagerly desired for efficient magnetization manipulation by current injection. Here we report that amorphous tungsten (W) is a promising non‐magnetic interlayer. Amorphous W shows clear antiferromagnetic coupling at thicknesses from 1.2 to 2.0 nm, which is thicker than other crystallized non‐magnetic interlayers at the first peak thicknesses of IEC oscillation. In addition, the amorphous W generates large SOT based on the intrinsic process of the spin Hall effect, which allows magnetization vector switching in SyAF. Amorphous W does not possess a well‐defined crystal symmetry. Considering this fact, the long‐range IEC and large SOT originating from the electronic structure in amorphous W are counterintuitive findings. The present study revisits what phases are stabilized in thin W layers, and provides a new avenue for utilizing the amorphous phase as a spintronic material.
- 16 September 2026
- Published by Wiley in Advanced Electronic Materials
Open AccessAmorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque
Artificially‐designed magnetic hetero‐structures with an antiferromagnetic alignment of magnetization in magnetic layers, which exploit the interlayer exchange coupling (IEC) through a non‐magnetic layer, are called synthetic antiferromagnets (SyAF) and are a treasure trove of functionalities for spintronics applications. In SyAF spintronics, a non‐magnetic layer simultaneously providing IEC and large electric current‐induced torque originating from spin‐orbit interaction, called spin‐orbit torque (SOT), has been eagerly desired for efficient magnetization manipulation by current injection. Here we report that amorphous tungsten (W) is a promising non‐magnetic interlayer. Amorphous W shows clear antiferromagnetic coupling at thicknesses from 1.2 to 2.0 nm, which is thicker than other crystallized non‐magnetic interlayers at the first peak thicknesses of IEC oscillation. In addition, the amorphous W generates large SOT based on the intrinsic process of the spin Hall effect, which allows magnetization vector switching in SyAF. Amorphous W does not possess a well‐defined crystal symmetry. Considering this fact, the long‐range IEC and large SOT originating from the electronic structure in amorphous W are counterintuitive findings. The present study revisits what phases are stabilized in thin W layers, and provides a new avenue for utilizing the amorphous phase as a spintronic material.
- Open Access
- 31 August 2026
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 8 (3) , 039002
Erratum: Magnetic anisotropy of the van der Waals ferromagnet C r 2 G e 2 T e 6 studied by angular-dependent x-ray magnetic circular dichroism [Phys. Rev. Research 4, 013139 (2022)]
Phys. Rev. Research 8, 039002 (2026)
- 31 August 2026
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 8 (3) , 039002
Open AccessErratum: Magnetic anisotropy of the van der Waals ferromagnet C r 2 G e 2 T e 6 studied by angular-dependent x-ray magnetic circular dichroism [Phys. Rev. Research 4, 013139 (2022)]
Phys. Rev. Research 8, 039002 (2026)
- 27 July 2026
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 26 (31) , 10407-10412
Large Interband-Driven Anisotropic Gilbert Damping of a Few Atomic Layers of Fe in Contact with MgO
Magnetization control in spintronic devices is governed by the Gilbert damping constant, which describes the energy dissipation in magnetization dynamics. Although Gilbert damping is often treated as an isotropic scalar, crystalline symmetry can induce orientational damping anisotropy. This anisotropy is commonly attributed to intraband scattering associated with changes in the electronic density of states, whereas interband scattering has generally been assumed to be isotropic. Here, we show that the anisotropic Gilbert damping of a few atomic layers of Fe in contact with MgO is governed by interband scattering. Time-resolved magneto-optical Kerr measurements reveal that intrinsic damping increases by nearly a factor of 3 when the magnetization tilts from in-plane to out-of-plane. Combined strain-dependent experiments and first-principles calculations identify interband scattering at the Fe/MgO interface as the origin of this effect, providing new insights into magnetization dynamics beyond the conventional intraband-dominated picture.
- 27 July 2026
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 26 (31) , 10407-10412
Large Interband-Driven Anisotropic Gilbert Damping of a Few Atomic Layers of Fe in Contact with MgO
Magnetization control in spintronic devices is governed by the Gilbert damping constant, which describes the energy dissipation in magnetization dynamics. Although Gilbert damping is often treated as an isotropic scalar, crystalline symmetry can induce orientational damping anisotropy. This anisotropy is commonly attributed to intraband scattering associated with changes in the electronic density of states, whereas interband scattering has generally been assumed to be isotropic. Here, we show that the anisotropic Gilbert damping of a few atomic layers of Fe in contact with MgO is governed by interband scattering. Time-resolved magneto-optical Kerr measurements reveal that intrinsic damping increases by nearly a factor of 3 when the magnetization tilts from in-plane to out-of-plane. Combined strain-dependent experiments and first-principles calculations identify interband scattering at the Fe/MgO interface as the origin of this effect, providing new insights into magnetization dynamics beyond the conventional intraband-dominated picture.
- Open Access
- 26 May 2026
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 8 (2)
Electric current control of helimagnetic chirality from a multidomain state in the helimagnet MnAu 2
In this Letter, we study the domain-wall dynamics under electric current in the helimagnet MnAu 2 . We have found that the threshold electric current of the transition from a multidomain state to a single-chiral domain state in a magnetic field is much lower than that of chirality reversal from a single-chiral domain within certain ranges of temperature and magnetic field. The chirality after the transition depends on whether the magnetic field and electric current were parallel or antiparallel. Numerical calculations based on the Landau-Lifshitz-Gilbert equation reproduced the experimental observations. These results indicate that the domain walls are highly mobile in the helimagnet.
- 26 May 2026
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 8 (2)
Open AccessElectric current control of helimagnetic chirality from a multidomain state in the helimagnet MnAu 2
In this Letter, we study the domain-wall dynamics under electric current in the helimagnet MnAu 2 . We have found that the threshold electric current of the transition from a multidomain state to a single-chiral domain state in a magnetic field is much lower than that of chirality reversal from a single-chiral domain within certain ranges of temperature and magnetic field. The chirality after the transition depends on whether the magnetic field and electric current were parallel or antiparallel. Numerical calculations based on the Landau-Lifshitz-Gilbert equation reproduced the experimental observations. These results indicate that the domain walls are highly mobile in the helimagnet.
- Open Access
- 19 May 2026
- Published by American Physical Society (APS) in APS Open Science
- Vol. 1
Quantitative imaging of spin and orbital magnetic moments in subsurface ultrathin layer with soft x-ray dichroic spectroptychography
Quantitative evaluation of magnetic moment distributions in microstructures with high spatial resolution is essential to advance the development of next-generation spintronic devices. In this study, we successfully imaged the magnetic domain structure of micropatterned subnanometer thin films by combining high-resolution and high-sensitivity imaging using soft x-ray ptychography and x-ray magnetic circular dichroism. Furthermore, by measuring hyperspectral images of magnetic thin-film patterns and applying the sum rule to absorption spectra at each pixel of the image, quantitative two-dimensional measurements of spin and orbital magnetic moments within magnetic domains were achieved. Such measurements provide a powerful evaluation method for the design of devices based on physical phenomena such as spin and orbital currents.
- 19 May 2026
- Published by American Physical Society (APS) in APS Open Science
- Vol. 1
Open AccessQuantitative imaging of spin and orbital magnetic moments in subsurface ultrathin layer with soft x-ray dichroic spectroptychography
Quantitative evaluation of magnetic moment distributions in microstructures with high spatial resolution is essential to advance the development of next-generation spintronic devices. In this study, we successfully imaged the magnetic domain structure of micropatterned subnanometer thin films by combining high-resolution and high-sensitivity imaging using soft x-ray ptychography and x-ray magnetic circular dichroism. Furthermore, by measuring hyperspectral images of magnetic thin-film patterns and applying the sum rule to absorption spectra at each pixel of the image, quantitative two-dimensional measurements of spin and orbital magnetic moments within magnetic domains were achieved. Such measurements provide a powerful evaluation method for the design of devices based on physical phenomena such as spin and orbital currents.
- 18 May 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (17)
X-ray linear dichroism in the kagome antiferromagnet Mn 3 Sn
- 18 May 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (17)
X-ray linear dichroism in the kagome antiferromagnet Mn 3 Sn
- 4 May 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (5) , 054402
Magnetization process of the layered diluted ferromagnetic semiconductor studied by x-ray magnetic circular dichroismThe layered 122-type diluted ferromagnetic semiconductor $(\mathrm{Ba},\mathrm{K}){(\mathrm{Zn},\mathrm{Mn})}_{2}{\mathrm{As}}_{2}$ has attracted much attention both for its high Curie temperature up to $\ensuremath{\sim}230$ K and for the independent control of charge-carrier and spin concentrations through doping K and Mn atoms at the Ba and Zn sites, respectively. In order to unveil the nature of the ferromagnetism in $(\mathrm{Ba},\mathrm{K}){(\mathrm{Zn},\mathrm{Mn})}_{2}{\mathrm{As}}_{2}$, its magnetization process has been studied by x-ray magnetic circular dichroism (XMCD) at the Mn ${L}_{2,3}$ edge in a wide range of temperature and magnetic field. The average magnetization of the Mn atoms as a function of magnetic field ($M\text{--}H$ curves) at various temperatures could be successfully explained by a mixture of paramagnetic (PM), superparamagnetic (SPM), and ferromagnetic (FM) components as previously reported for GaMnAs, revealing the complex nature of the ferromagnetism in $(\mathrm{Ba},\mathrm{K}){(\mathrm{Zn},\mathrm{Mn})}_{2}{\mathrm{As}}_{2}$. The average magnetization of the SPM clusters of different sizes and the FM regions were found to be small compared to those in GaMnAs, which we attribute to the antiferromagnetic interaction between nearest-neighbor Mn atoms in $(\mathrm{Ba},\mathrm{K}){(\mathrm{Zn},\mathrm{Mn})}_{2}{\mathrm{As}}_{2}$ on the basis of recent theoretical predictions.- 4 May 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (5) , 054402
Magnetization process of the layered diluted ferromagnetic semiconductor studied by x-ray magnetic circular dichroismThe layered 122-type diluted ferromagnetic semiconductor $(\mathrm{Ba},\mathrm{K}){(\mathrm{Zn},\mathrm{Mn})}_{2}{\mathrm{As}}_{2}$ has attracted much attention both for its high Curie temperature up to $\ensuremath{\sim}230$ K and for the independent control of charge-carrier and spin concentrations through doping K and Mn atoms at the Ba and Zn sites, respectively. In order to unveil the nature of the ferromagnetism in $(\mathrm{Ba},\mathrm{K}){(\mathrm{Zn},\mathrm{Mn})}_{2}{\mathrm{As}}_{2}$, its magnetization process has been studied by x-ray magnetic circular dichroism (XMCD) at the Mn ${L}_{2,3}$ edge in a wide range of temperature and magnetic field. The average magnetization of the Mn atoms as a function of magnetic field ($M\text{--}H$ curves) at various temperatures could be successfully explained by a mixture of paramagnetic (PM), superparamagnetic (SPM), and ferromagnetic (FM) components as previously reported for GaMnAs, revealing the complex nature of the ferromagnetism in $(\mathrm{Ba},\mathrm{K}){(\mathrm{Zn},\mathrm{Mn})}_{2}{\mathrm{As}}_{2}$. The average magnetization of the SPM clusters of different sizes and the FM regions were found to be small compared to those in GaMnAs, which we attribute to the antiferromagnetic interaction between nearest-neighbor Mn atoms in $(\mathrm{Ba},\mathrm{K}){(\mathrm{Zn},\mathrm{Mn})}_{2}{\mathrm{As}}_{2}$ on the basis of recent theoretical predictions.- 14 April 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (13)
Temperature dependence of charge-to-spin conversion in a rhombohedral (110) bismuth thin film
- 14 April 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (13)
Temperature dependence of charge-to-spin conversion in a rhombohedral (110) bismuth thin film
- 3 November 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (18)
Magnetic resonance and microwave resistance modulation in the van der Waals ferrimagnet Mn 3 Si 2 Te 6
- 3 November 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (18)
Magnetic resonance and microwave resistance modulation in the van der Waals ferrimagnet Mn 3 Si 2 Te 6