Marc Monthioux
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Research Interests
Marc Monthioux has a total of 123 co-authors. Here are the top co-authors by number of shared publications:
- Pascal Puech
Centre d’Elaboration des Matériaux et d’Etudes Structurales (CEMES), UPR CNRS 8011, Université de Toulouse, 29 Rue Jeanne Marvig, CEDEX 04, 31055 Toulouse, France
16 shared publications - Emmanuel Flahaut
Université de Toulouse, Toulouse INP, CNRS, CIRIMAT, Toulouse, France
7 shared publications - Fabrice Piazza
Laboratorio de Nanociencia, Pontificia Universidad Católica Madre y Maestra 2 , Autopista Duarte km 1 1/2, Santiago de los Caballeros
7 shared publications - Wolfgang Bacsa
CEMES-CNRS and University of Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse, France
5 shared publications - Benjamin Lassagne
Université de Toulouse
3 shared publications - Christophe Laurent
Centre Interuniversitaire de Recherche et d’Ingénierie des Matériaux CIRIMAT, Université de Toulouse, UMR CNRS INP UT 5085, 118 Route de Narbonne, 31062 Toulouse, France
3 shared publications
Latest Publications
- Open Access
Background Issues in X-Ray Diffraction and Raman Spectroscopy of Carbon Materials
Removing background signals is a common preprocessing step, but it is not without drawbacks. In X-ray diffraction data, background correction can artificially symmetrize diffraction peaks, which becomes a critical issue for lamellar materials such as graphenic carbon when the Laue indices lie in the plane (e.g., the 10 and 11 peaks). We discuss several approaches to background correction and their implications for the resulting data. In Raman spectroscopy, defects activate the phonon density of states, leading to higher intensity below the D band than above the G band, with respect to the Raman shift. After discussing the linear and circular polarization on the Raman selection rules, we show how flattening the background—a widely used measure of disorder—alters the ID/IG ratio. Finally, principal component analysis (PCA) provides a useful preliminary exploration of data structure; however, because its components may include negative contributions, it cannot be directly applied to spectral decomposition. In contrast, non-negative component decomposition offers an optimal way to preserve the Raman background, even in the presence of luminescence. We confirm our analysis with ANOVA p-values.
Open AccessBackground Issues in X-Ray Diffraction and Raman Spectroscopy of Carbon Materials
Removing background signals is a common preprocessing step, but it is not without drawbacks. In X-ray diffraction data, background correction can artificially symmetrize diffraction peaks, which becomes a critical issue for lamellar materials such as graphenic carbon when the Laue indices lie in the plane (e.g., the 10 and 11 peaks). We discuss several approaches to background correction and their implications for the resulting data. In Raman spectroscopy, defects activate the phonon density of states, leading to higher intensity below the D band than above the G band, with respect to the Raman shift. After discussing the linear and circular polarization on the Raman selection rules, we show how flattening the background—a widely used measure of disorder—alters the ID/IG ratio. Finally, principal component analysis (PCA) provides a useful preliminary exploration of data structure; however, because its components may include negative contributions, it cannot be directly applied to spectral decomposition. In contrast, non-negative component decomposition offers an optimal way to preserve the Raman background, even in the presence of luminescence. We confirm our analysis with ANOVA p-values.
- Open Access
- 31 July 2025
- Published by Elsevier in Carbon Trends
- Vol. 20
Hydrogenation and etching of single-layer graphene during exposure to atomic hydrogen
- 31 July 2025
- Published by Elsevier in Carbon Trends
- Vol. 20
Open AccessHydrogenation and etching of single-layer graphene during exposure to atomic hydrogen
- Open Access
- 15 July 2025
- Published by Elsevier in Carbon Trends
- Vol. 20
Charge transfer during sodium-ion intercalation in graphite-like anodes as determined by Raman spectroscopy
- 15 July 2025
- Published by Elsevier in Carbon Trends
- Vol. 20
Open AccessCharge transfer during sodium-ion intercalation in graphite-like anodes as determined by Raman spectroscopy
- 21 May 2024
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 321
Raman analysis of the dehydrogenation process of hydrogenated monolayer graphene
- 21 May 2024
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 321
Raman analysis of the dehydrogenation process of hydrogenated monolayer graphene
- Open Access
- 16 November 2023
- Published by Elsevier in Carbon Trends
- Vol. 13
Addressing the effect of stacking faults in X-ray diffractograms of graphite through atom-scale simulations
- 16 November 2023
- Published by Elsevier in Carbon Trends
- Vol. 13
Open AccessAddressing the effect of stacking faults in X-ray diffractograms of graphite through atom-scale simulations
- 18 December 2022
- Published by Elsevier in Ultramicroscopy
- Vol. 245, 113667
New probes based on carbon nano-cones for scanning probe microscopies
- 18 December 2022
- Published by Elsevier in Ultramicroscopy
- Vol. 245, 113667
New probes based on carbon nano-cones for scanning probe microscopies