Tomislav Brodar

Pure and Al-doped (3 at.%) ZnO nanorods were prepared by two-step synthesis. In the first step, ZnO thin films were deposited on silicon wafers by spin coating; then, ZnO nanorods (NR) and Al-doped ZnO NR were grown using a chemical bath method. The structural properties of zincite nanorods were determined by X-ray diffraction (XRD) and corroborated well with the morphologic properties obtained by field-emission gun scanning electron microscopy (FEG SEM) with energy-dispersive X-ray spectroscopy (EDS). Morphology results revealed a minute change in the nanorod geometry upon doping, which was also visible by Kelvin probe force microscopy (KPFM). KPFM also showed preliminary electrical properties. Detailed electrical characterization of pure and Al-doped ZnO NR was conducted by temperature-dependent current–voltage (I–V) measurements on Au/(Al)ZnO NR/n-Si junctions. It was shown that Al doping increases the conductivity of ZnO NR by an order of magnitude. The I–V characteristics of pure and Al-doped ZnO NR followed the ohmic regime for lower voltages, whereas, for the higher voltages, significant changes in electric conduction mechanisms were detected and ascribed to Al-doping. In conclusion, for future applications, one should consider the possible influence of the geometry change of (Al)ZnO NRs on their overall electric transport properties.

Deep level defects created by implantation of light-helium and medium heavy carbon ions in the single ion regime and neutron irradiation in n-type 4H-SiC are characterized by the DLTS technique. Two deep levels with energies 0.4 eV (EH1) and 0.7 eV (EH3) below the conduction band minimum are created in either ion implanted and neutron irradiated material beside carbon vacancies (Z_1/2). In our study, we analyze components of EH1 and EH3 deep levels based on their concentration depth profiles, in addition to (−3/=) and (=/−) transition levels of silicon vacancy. A higher EH3 deep level concentration compared to the EH1 deep level concentration and a slight shift of the EH3 concentration depth profile to larger depths indicate that an additional deep level contributes to the DLTS signal of the EH3 deep level, most probably the defect complex involving interstitials. We report on the introduction of metastable M-center by light/medium heavy ion implantation and neutron irradiation, previously reported in cases of proton and electron irradiation. Contribution of M-center to the EH1 concentration profile is presented.

Sulfur-doped TiO₂ (S-TiO₂) composites with reduced graphene oxide (rGO), wt. % of rGO equal to 0.5%, 2.75%, and 5.0%, were prepared by a one-pot solvothermal procedure. The aim was to improve photocatalytic performance in comparison to TiO₂ under simulated solar irradiation for the treatment of diclofenac (DCF) in aqueous medium. The obtained composites were characterized for physical-chemical properties using thermogravimetric analysis (TGA), X-ray diffractograms (XRD), Raman, scanning electron microscopy (SEM)/energy dispersive X-ray (EDX), Brauner Emmett Teller (BET), and photoluminescence (PL) analyses, indicating successful sulfur doping and inclusion of rGO. Sulfur doping and rGO have successfully led to a decrease in photogenerated charge recombination. However, both antagonistic and synergistic effects toward DCF treatment were observed, with the latter being brought forward by higher wt.% rGO. The composite with 5.0 wt.% rGO has shown the highest DCF conversion at pH 4 compared to that obtained by pristine TiO₂, despite lower DCF adsorption during the initial dark period. The expected positive effects of both sulfur doping and rGO on charge recombination were found to be limited because of the subpar interphase contact with the composite and incomplete reduction of the GO precursor. Consequent unfavorable interactions between rGO and DCF negatively influenced the activity of the studied S-TiO₂/rGO photocatalyst under simulated solar irradiation.

In 2016, the ”E-SiCure” project (standing for Engineering Silicon Carbide for Border and Port Security), funded by the NATO Science for Peace and Security Programme, was launched. The main objective is to combine theoretical, experimental and applied research towards the development of radiation-hard SiC-based detectors of special nuclear materials (SNM), and by that way, to enhance border and port security barriers. Along the plan, material modification processes are employed firstly to study, and secondly to manipulate the most severe electrically active defects (which trap or annihilate free charge carriers), by specific ion implantation and defect engineering. This paper gives an overview of the experimental activities performed at the JSI TRIGA reactor in the framework of the E-SiCure project. Initial activities were aimed at obtaining information on the radiation hardness of SiC and at the study of the energy levels of the defects induced by neutron irradiation. Several Schottky barrier diodes were fabricated out of nitrogen-doped epitaxial grown 4H-SiC, and irradiated under Cd filters in the PT irradiation channel in the JSI TRIGA reactor with varying neutron fluence levels. Neutron-induced defects in the material were studied using temperature dependent current-voltage (I-V), capacitance-voltage (C-V) and Deep-Level Transient Spectroscopy (DLTS) measurements. Our prototype neutron detectors are configured as 4H-SiC-based Schottky barrier diodes for detection of secondary charged particles (tritons, alphas and lithium atoms) which are result of thermal neutron conversion process in ¹⁰B and ⁶LiF layers above the surface of the 4H-SiC diodes. For field testing of neutron detectors using a broad beam of reactor neutrons we designed a standalone prototype detection system consisting of a preamplifier, shaping amplifier and a multichannel analyser operated by a laptop computer. The reverse bias for the detector diode and the power to electronic system are provided by a standalone battery-powered voltage source. The detector functionality was established through measurements using an ²⁴¹Am alpha particle source. Two dedicated experimental campaigns were performed at the JSI TRIGA reactor. The registered pulse height spectra from the detectors, using both ¹⁰B and ⁶LiF neutron converting layers, clearly demonstrated the neutron detection abilities of the SiC detector prototypes.

We present preliminary results on minority carrier traps in as-grown n-type 4H–SiC Schottky barrier diodes. The minority carrier traps are crucial for charge trapping and recombination processes. In this study, minority carrier traps were investigated by means of minority carrier transient spectroscopy (MCTS) and high-resolution Laplace-MCTS measurements. A single minority carrier trap with its energy level position at E_v + 0.28 eV was detected and assigned to boron-related defects.