Lishan Zhao

Bulk single-crystal aluminum nitride (BSC AlN) substrates are known to be ideal platforms for constructing high-power and DUV optoelectronic nitride devices. However, high-quality epitaxial growth of nitride films on BSC AlN and related characterization is still far from being well studied. The challenges and uncertainties in doing accurate thermal characterization on such heterostructures are not fully recognized. In this study, we successfully fabricated a buffer-free thin GaN/AlN heterostructure on a BSC AlN substrate via metal−organic chemical vapor deposition (MOCVD) technology. This heterostructure consists of a 140 nm-thick AlN homoepitaxial layer and a 480 nm-thick GaN epitaxial layer. Characterization results indicate that the prepared heterojunction has excellent crystal quality and smooth surface morphology. To accurately obtain the thermophysical parameters of the heterostructure, this study employed broadband frequency domain thermoreflectance (BB-FDTR) technology, and careful measurements with detailed data analysis were demonstrated. In addition to showing the feasibility of epitaxial growth of high-quality thin film GaN directly on BSC AlN substrates, this study also provides key experimental data for evaluating the heat dissipation advantages of GaN/AlN heterostructures.

In this letter we report the morphological, electrical and thermal transport properties of a high electron mobility transistor (HEMT) style epitaxial wafer, where an approximately 2000 nm thick GaN layer has been directly deposited on a bulk single crystal AlN (BCS AlN) substrate with no buffer layer in between, and also the experimental results of DC and RF properties of a HEMT device based on such a wafer. The sample achieved very smooth surface morphology and roughness down to Ra = 0.172 nm over an area of 1 μ m × 1 μ m in AFM measurements. Electrical transport measurements showed sheet carrier concentration of 7.3 × 10 ¹² cm ⁻² , Hall mobility of 2220 cm ² /(V·s) and sheet resistance of 386 Ω/sq. The measured maximum trans-conductance G _m of the fabricated HEMT device was 250 mS/mm at a gate bias voltage of −1.8 V. With a gate length of 500 nm and a gate-to-drain distance of 4.7 μ m, the f _T and f _max , derived from S -parameters measurements, are 25.9 and 54 GHz, respectively. Large-signal RF measurement exhibited a high linear power gain ( G _p ) of 25.2 dB and a peak output power ( P _out ) density of 7.2 W/mm@1.5 GHz, associated with a power-added efficiency (PAE) of 40.9%. Comparing with the structure with a 500 nm thick AlGaN buffer, the total thermal resistance of the structure in our device decreased by 44%. This work confirms the technical feasibility of fabricating GaN HEMT devices on BCS AlN substrates without any additional buffer layer, and the excellent electric and thermal transport properties of the simplified wafer structure indicate a bright future of BCS AlN-based GaN HEMT devices in ultra-high-frequency and high-power-density nitride electronics.

To achieve an atomically clean surface of single-crystal aluminum nitride (AlN) substrates, this study systematically evaluated the effects of each step in ex situ wet chemical cleaning (solvent, piranha solution, HF, HCl) and in situ hydrogen annealing. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) analyses revealed that while the combination of solvent and piranha solution exposed step morphology, its effectiveness in removing organic contaminants was limited. HF cleaning efficiently removed the oxide layer but introduced fluorine residues, whereas HCl cleaning left no chlorine residues but exhibited lower efficiency in oxide removal. In situ hydrogen annealing significantly reduced carbon and oxygen contamination, albeit accompanied by a transformation of the surface morphology from step to island mode. By modulating the low V/III ratio during low-temperature metal–organic chemical vapor deposition (MOCVD) growth, a controlled transition from 3D island growth to 2D step-flow growth was achieved. This research provides a basis for optimizing AlN substrate surface treatment, offering important insights for advancing nitride-based optoelectronic and power devices.

A compact broadband combiner with a high power capacity and a low insertion loss, which is especially useful for solid-state power sources where multi-way power synthesis is needed, was designed and experimentally investigated. The combiner could combine the microwave signals of sixteen terminals into a single one and was based on a radial-line waveguide whose circumferential symmetry benefited the amplitude and phase consistency of the combiner. Simulation and experimental results showed that the prototype device, designed for S-band applications, exhibited a reflection coefficient S_1,1 < −20 dB in the range of 2.06–2.93 GHz, which corresponds to a relative bandwidth of approximately 34.6%. At 2.45 GHz, the phase imbalance was ±4.5° and the 16-way transmission coefficient was concentrated around −12.0~−12.3 dB. The insertion loss of the device at ambient and elevated temperatures was simulated and experimentally verified, which is of importance for the design of similar high-power microwave combiners. High-power tests proved that even without enforced wind or liquid cooling, the device can handle continuous power (CW) of at least 3.9 kW, which can be much enhanced by taking regular cooling measures. The combined features of the designed combiner suggest promising applications for power synthesis in high-power, solid-state RF sources.