Igor Bartoš
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Igor Bartoš has a total of 85 co-authors. Here are the top co-authors by number of shared publications:
- Petr Jiricek
Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 00 Prague 6, Czech Republic
21 shared publications - Oleksandr Romanyuk
Institute of Physics Czech Academy of Sciences Prague Czech Republic
15 shared publications - Wolfgang Schattke
Institut für Theoretische Physik und Astrophysik, Universität Kiel, D-24098 Kiel, Germany
13 shared publications M. Cukr
Institute of Physics, Academy of Sciences of the Czech Republic, CZ-16253, Prague 6, Czech Republic
12 shared publicationsT. Paskova
8 shared publicationsT. Strasser
Institute of Theoretical Physics, Christian-Albrechts-University, D-24098 Kiel, Germany
8 shared publications
Latest Publications
- 1 August 2018
- Published by Elsevier in Diamond and Related Materials
- Vol. 87, 208-214
Electron affinity of undoped and boron-doped polycrystalline diamond films
- 1 August 2018
- Published by Elsevier in Diamond and Related Materials
- Vol. 87, 208-214
Electron affinity of undoped and boron-doped polycrystalline diamond films
- 1 October 2017
- Published by Elsevier in Surface Science
- Vol. 664, 241-245
Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces
- 1 October 2017
- Published by Elsevier in Surface Science
- Vol. 664, 241-245
Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces
- 1 December 2016
- Published by Elsevier in Applied Surface Science
- Vol. 389, 1156-1160
GaN quantum dot polarity determination by X-ray photoelectron diffraction
- 1 December 2016
- Published by Elsevier in Applied Surface Science
- Vol. 389, 1156-1160
GaN quantum dot polarity determination by X-ray photoelectron diffraction
- 15 April 2016
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 119 (15) , 159901
Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]
- 15 April 2016
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 119 (15) , 159901
Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]
- 11 March 2016
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 119 (10) , 105303
Electron band bending of polar, semipolar and non-polar GaN surfaces
The magnitudes of the surface band bending have been determined by X-ray photoelectron spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All surfaces have been prepared from crystalline GaN samples grown by the hydride-vapour phase epitaxy and separated from sapphire substrates. The Ga 3d core level peak shifts have been used for band bending determination. Small band bending magnitudes and also relatively small difference between the band bendings of the surfaces with opposite polarity have been found. These results point to the presence of electron surface states of different amounts and types on surfaces of different polarity and confirm the important role of the electron surface states in compensation of the bound surface polarity charges in wurtzite GaN crystals.
- 11 March 2016
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 119 (10) , 105303
Electron band bending of polar, semipolar and non-polar GaN surfaces
The magnitudes of the surface band bending have been determined by X-ray photoelectron spectroscopy for polar, semipolar, and non-polar surfaces of wurtzite GaN crystals. All surfaces have been prepared from crystalline GaN samples grown by the hydride-vapour phase epitaxy and separated from sapphire substrates. The Ga 3d core level peak shifts have been used for band bending determination. Small band bending magnitudes and also relatively small difference between the band bendings of the surfaces with opposite polarity have been found. These results point to the presence of electron surface states of different amounts and types on surfaces of different polarity and confirm the important role of the electron surface states in compensation of the bound surface polarity charges in wurtzite GaN crystals.
- 5 June 2015
- Published by Springer Nature in Journal of Materials Research
- Vol. 30 (19) , 2881-2892
Polarity of GaN with polar {0001} and semipolar , , orientations by x-ray photoelectron diffraction
- 5 June 2015
- Published by Springer Nature in Journal of Materials Research
- Vol. 30 (19) , 2881-2892
Polarity of GaN with polar {0001} and semipolar , , orientations by x-ray photoelectron diffraction
- 12 January 2015
- Published by AIP Publishing in Applied Physics Letters
- Vol. 106 (2) , 021602
Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction
We investigate GaN nanowire ensembles spontaneously formed in plasma-assisted molecular beam epitaxy by non-destructive low-energy electron diffraction (LEED) and x-ray photoelectron diffraction (XPD). We show that GaN nanowire ensembles prepared on AlN-buffered substrates with well-defined N polarity exhibit similar LEED intensity-voltage curves and angular distribution of photo-emitted electrons as N-polar free-standing GaN layers. Therefore, as in the case of GaN layers, LEED and XPD are found to be suitable techniques to assess the polarity of GaN nanowire ensembles on a macroscopic scale. The analysis of GaN nanowire ensembles prepared on bare Si(111) allows us to conclude that, on this non-polar substrate, the majority of nanowires is also N-polar.- 12 January 2015
- Published by AIP Publishing in Applied Physics Letters
- Vol. 106 (2) , 021602
Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction
We investigate GaN nanowire ensembles spontaneously formed in plasma-assisted molecular beam epitaxy by non-destructive low-energy electron diffraction (LEED) and x-ray photoelectron diffraction (XPD). We show that GaN nanowire ensembles prepared on AlN-buffered substrates with well-defined N polarity exhibit similar LEED intensity-voltage curves and angular distribution of photo-emitted electrons as N-polar free-standing GaN layers. Therefore, as in the case of GaN layers, LEED and XPD are found to be suitable techniques to assess the polarity of GaN nanowire ensembles on a macroscopic scale. The analysis of GaN nanowire ensembles prepared on bare Si(111) allows us to conclude that, on this non-polar substrate, the majority of nanowires is also N-polar.- 1 October 2014
- Published by Elsevier in Applied Surface Science
- Vol. 315, 506-509
Polarity of wurtzite crystals by photoelectron diffraction
- 1 October 2014
- Published by Elsevier in Applied Surface Science
- Vol. 315, 506-509
Polarity of wurtzite crystals by photoelectron diffraction
- 12 September 2014
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 116 (10) , 104909
Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces
Polarity of semipolar andsurfaces was determined withX-ray photoelectron diffraction (XPD) using a standard MgKα source. The photoelectron emission from N 1s core level measured in the a-plane of the crystals shows significant differences for the two crystal orientations within the polar angle range of 80–100° from the 〈0001〉 normal. It was demonstrated that XPD polar plots recorded in the a-plane are similar for each polarity of the and crystals if referred to 〈0001〉 crystal axes. For polarity determinations of all important semipolarsurfaces, the above given polar angle range is suitable.- 12 September 2014
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 116 (10) , 104909
Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces
Polarity of semipolar andsurfaces was determined withX-ray photoelectron diffraction (XPD) using a standard MgKα source. The photoelectron emission from N 1s core level measured in the a-plane of the crystals shows significant differences for the two crystal orientations within the polar angle range of 80–100° from the 〈0001〉 normal. It was demonstrated that XPD polar plots recorded in the a-plane are similar for each polarity of the and crystals if referred to 〈0001〉 crystal axes. For polarity determinations of all important semipolarsurfaces, the above given polar angle range is suitable.- 26 August 2013
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (9) , 091601
GaN polarity determination by photoelectron diffraction
A nondestructive approach to determine the wurtzite GaN crystal polarity based on X-ray photoelectron diffraction is proposed. The approach, utilizing the ratio of photoemitted electron currents excited by a standard laboratory X-ray source from the N 1s level in the plane at polar angles of 20° and 25°, is tested on GaN crystals. The photoelectron intensity ratio I20/I25 is larger or smaller than unity for GaN(0001) or , respectively. The approach can be used for polarity determination of other binary wurtzite crystals. The atom with the smaller electron scattering cross-section should be used as the emitter.- 26 August 2013
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (9) , 091601
GaN polarity determination by photoelectron diffraction
A nondestructive approach to determine the wurtzite GaN crystal polarity based on X-ray photoelectron diffraction is proposed. The approach, utilizing the ratio of photoemitted electron currents excited by a standard laboratory X-ray source from the N 1s level in the plane at polar angles of 20° and 25°, is tested on GaN crystals. The photoelectron intensity ratio I20/I25 is larger or smaller than unity for GaN(0001) or , respectively. The approach can be used for polarity determination of other binary wurtzite crystals. The atom with the smaller electron scattering cross-section should be used as the emitter.