S. A. Levashov

The effect of the synthesis temperature on the microstructure and the electrophysical properties of metal–dielectric–semiconductor structures based on ferroelectric films of the composition Ba_0.8Sr_0.2TiO₃ upon the formation of p-type silicon substrates with [100] orientation is studied. It was experimentally established that an increase in the synthesis temperature leads to an improvement in the dielectric and piezoelectric properties of ferroelectric films. The temperature stability and stability in the behavior of the capacitance–voltage characteristics of MIS structures on the number of switching cycles are shown.

Results of studying the features of the current–voltage ( I– V) and capacitance–voltage characteristics of field-resistant silicon–ultrathin oxide–polysilicon structures are presented. It...

The high-frequency capacitance–voltage characteristics of metal–oxide–semiconductor structures on n-Si substrates with an oxide thickness of 39 Å are studied upon being subjected to damage by field stress. It is shown that the action of a high, but pre-breakdown electric field on an ultrathin insulating layer brings about the formation of a large number of additional localized interface electron states with an energy level arranged at 0.14 eV below the conduction band of silicon. It is found that, as the field stress is increased, the recharging of newly formed centers provides the accumulation of excess charge up to 8 × 10¹² cm^–2 at the silicon–oxide interface. The lifetime of localized centers created under field stress is two days, after which the dependences of the charge localized at the semiconductor–insulator interface on the voltage at the gate after and before field stress are practically the same.

The possibility of the formation of stable domain states in Ba0.8Sr0.2TiO3films on the initial surface and in a preliminarily polarized region of the film has been demonstrated using piezoresponse...