Volodymyr V. Lysak
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Volodymyr V. Lysak has a total of 201 co-authors. Here are the top co-authors by number of shared publications:
I.A. Sukhoivanov
Departamento de Electronica, FIMEE, University Guanohuato, Mexico
17 shared publicationsA.V. Shulika
Lab. Photonics, Kharkov National University of Radio Electronics, Lenin ave., 14, 61166, Kharkov, Ukraine
11 shared publicationsIgor A. Sukhoivanov
Univ. Guanajuato (Mexico)
11 shared publicationsYong Tak Lee
School of Photon Science and Technology, Gwangju Institute of Science and Technology (GIST), 261, Cheomdan-gwagiro (Oryong-dong), Buk-gu, 500-712, Republic of Korea
10 shared publicationsI. A. Sukhoivanov
University Guanajuato, Salamanca, Mexico
9 shared publications- Igor A. Sukhoivanov
University of Guanajuato
8 shared publications
Latest Publications
- 1 October 2021
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 55 (10) , 795-798
Specific Features of Structural Stresses in InGaN/GaN Nanowires
An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.
- 1 October 2021
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 55 (10) , 795-798
Specific Features of Structural Stresses in InGaN/GaN Nanowires
An experimental study aimed at developing the method of the spontaneous synthesis of InGaN/GaN nanowires formed as radial heterostructures by molecular-beam epitaxy is reported. By means of electron microscopy, it is shown that a wedge-shaped crack can be formed at an In content x = 0.4 and 0.04 in the core and shell, respectively. On the basis of the model of internal structural stresses, a formula is proposed to estimate the critical dimensions and composition for the formation of cracks in nanowires. Comparison of the estimates with the experimental morphology data shows good agreement between them.
- Open Access
- 1 January 2021
- Published by Ioffe Institute Russian Academy of Sciences in Физика и техника полупроводников
- Vol. 55 (9) , 785
Особенности структурных напряжений в нитевидных нанокристаллах InGaN/GaN
Особенности структурных напряжений в нитевидных нанокристаллах InGaN/GaN
- 1 January 2021
- Published by Ioffe Institute Russian Academy of Sciences in Физика и техника полупроводников
- Vol. 55 (9) , 785
Open AccessОсобенности структурных напряжений в нитевидных нанокристаллах InGaN/GaN
Особенности структурных напряжений в нитевидных нанокристаллах InGaN/GaN
- 1 December 2018
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 52 (16) , 2096-2098
InGaN/GaN QDs Nanorods: Processing and Properties
InGaN/GaN nanorod structure is presented for the fabrication of light-emitting diodes by means of plasma-chemical etching. Processes of the etching of nanorods and the defect passivation in a...
- 1 December 2018
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 52 (16) , 2096-2098
InGaN/GaN QDs Nanorods: Processing and Properties
InGaN/GaN nanorod structure is presented for the fabrication of light-emitting diodes by means of plasma-chemical etching. Processes of the etching of nanorods and the defect passivation in a...
- 17 April 2018
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 52 (5) , 609-611
GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells
The properties of the hybrid energy sources “piezoelectric nanogenerator-solar cell” based on GaAs nanowires with the wurtzite crystal structure were investigated. Measurements were performed by the...
- 17 April 2018
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 52 (5) , 609-611
GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells
The properties of the hybrid energy sources “piezoelectric nanogenerator-solar cell” based on GaAs nanowires with the wurtzite crystal structure were investigated. Measurements were performed by the...
- 20 November 2017
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 12 (1)
Piezoelectric Current Generation in Wurtzite GaAs Nanowires
Generation of electric current is observed when GaAs nanowires with wurtzite crystal structure are bent by the probe of an atomic force microscope. The current originates from a piezo active phase in the nanowires due to the piezoelectric effect. Increasing of the piezo‐potential in bent nanowires enhances tunneling through the probe–nanowire Schottky barrier due to the thermionic field emission. Laser illumination amplifies short‐circuit current pulses by two orders of magnitude from 9 pA to 1 nA due to the piezo‐phototronic effect. Utilization of such piezo‐phototronic effect in GaAs nanowires is a solution to accelerate the efficiency of hybrid energy sources “piezoelectric nanogenerator − solar cell” comprised of III–V nanowires.
- 20 November 2017
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 12 (1)
Piezoelectric Current Generation in Wurtzite GaAs Nanowires
Generation of electric current is observed when GaAs nanowires with wurtzite crystal structure are bent by the probe of an atomic force microscope. The current originates from a piezo active phase in the nanowires due to the piezoelectric effect. Increasing of the piezo‐potential in bent nanowires enhances tunneling through the probe–nanowire Schottky barrier due to the thermionic field emission. Laser illumination amplifies short‐circuit current pulses by two orders of magnitude from 9 pA to 1 nA due to the piezo‐phototronic effect. Utilization of such piezo‐phototronic effect in GaAs nanowires is a solution to accelerate the efficiency of hybrid energy sources “piezoelectric nanogenerator − solar cell” comprised of III–V nanowires.
- 1 January 2017
- Published by Elsevier in Materials Today: Proceedings
- Vol. 4 (3) , 4890-4895
Optical properties of core/shell nanoparticles: Comparison of TiO 2 /Ag and Ag/TiO 2 structures
- 1 January 2017
- Published by Elsevier in Materials Today: Proceedings
- Vol. 4 (3) , 4890-4895
Optical properties of core/shell nanoparticles: Comparison of TiO 2 /Ag and Ag/TiO 2 structures
- 17 December 2016
- Published by Pleiades Publishing Ltd in Physics of the Solid State
- Vol. 58 (12) , 2401-2405
Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition
- 17 December 2016
- Published by Pleiades Publishing Ltd in Physics of the Solid State
- Vol. 58 (12) , 2401-2405
Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition
- 11 October 2016
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 50 (10) , 1390-1395
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
- 11 October 2016
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 50 (10) , 1390-1395
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
- Open Access
- 1 August 2016
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 741 (1) , 012083
InGaN/GaN heterostructures with lateral confinement for light emitting diodes
InGaN/GaN nanorod structure for light emission diode fabricated by the reactive plasma etching through the self-assembled Ni nano-cluster mask is presented. Fabricated array structure, presented in the form of truncated cones with average diameter height and period of nanorods is 250±50 nm, 430nm and 650±50 nm, respectively. The side angle of single structure about 80o. EL spectrum has maximum at 460 nm.
- 1 August 2016
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 741 (1) , 012083
Open AccessInGaN/GaN heterostructures with lateral confinement for light emitting diodes
InGaN/GaN nanorod structure for light emission diode fabricated by the reactive plasma etching through the self-assembled Ni nano-cluster mask is presented. Fabricated array structure, presented in the form of truncated cones with average diameter height and period of nanorods is 250±50 nm, 430nm and 650±50 nm, respectively. The side angle of single structure about 80o. EL spectrum has maximum at 460 nm.
- Open Access
- 1 August 2016
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 741 (1) , 012154
Optical field distribution in quasy-lD nanostructures
The FDTD optical distribution model in the quasi single dimensional nanostructures is presented. The polar diagram is analyzed for nanowire structure with various diameters. The main conditions for the maximum output in vertical (0° and 180°), horizontal (90°) and leaky mode (30°, 60° and 165°) directions are discussed. Theoretical data show good agreement with experiments.
- 1 August 2016
- Published by IOP Publishing in Journal of Physics: Conference Series
- Vol. 741 (1) , 012154
Open AccessOptical field distribution in quasy-lD nanostructures
The FDTD optical distribution model in the quasi single dimensional nanostructures is presented. The polar diagram is analyzed for nanowire structure with various diameters. The main conditions for the maximum output in vertical (0° and 180°), horizontal (90°) and leaky mode (30°, 60° and 165°) directions are discussed. Theoretical data show good agreement with experiments.