Stefan Bringuier

We report the findings of a hackathon focused on exploring the diverse applications of large language models in molecular and materials science.

Large-language models (LLMs) such as GPT-4 caught the interest of many scientists. Recent studies suggested that these models could be useful in chemistry and materials science. To explore these possibilities, we organized a hackathon. This article chronicles the projects built as part of this hackathon. Participants employed LLMs for various applications, including predicting properties of molecules and materials, designing novel interfaces for tools, extracting knowledge from unstructured data, and developing new educational applications. The diverse topics and the fact that working prototypes could be generated in less than two days highlight that LLMs will profoundly impact the future of our fields. The rich collection of ideas and projects also indicates that the applications of LLMs are not limited to materials science and chemistry but offer potential benefits to a wide range of scientific disciplines.

We present a computational investigation of the dependence of material erosion on the incident ion angle at rough graphite and silicon carbide divertor surfaces. Ion angle distributions (IADs) for D plasmas at NSTX-U and DIII-D divertors were calculated by an equation-of-motion model that traces the ion trajectories in the sheath. Then, the effective sputtering yields and ion shadowed area fractions were calculated by a Monte Carlo micro-patterning and roughness code that applied the calculated IADs to surface topographic data that were obtained from optical confocal microscopy of rough graphite and SiC divertor surfaces from NSTX-U and DIII-D experiments. The calculations found that the effective sputtering yields, the sputtering pattern, and the shadowed area are determined by the detailed surface topology rather than the root mean square roughness RRMS, which represents deviations from a flat surface. The suppression of the effective sputtering yields for rough surfaces compared to the yield for a smooth surface was accounted for by the change of the mean local incident ion angle (LIIA) ⟨θ′⟩. The mean surface inclination angle distribution (SIAD) ⟨δ⟩ was found to be a useful parameter to estimate the LIIA from the calculated IADs. We report global empirical formulas for the mean LIIA and fraction of the area shadowed from the main ions for D plasmas for rough surfaces with B-field incident angles α = 85°–89° as a function of the mean SIAD ⟨δ⟩. We propose the use of the mean LIIA ⟨θ′⟩ to estimate the sputtering yield for rough surfaces from the angular dependence of the sputtering yield.

Silicon carbide (SiC) represents a promising but largely untested plasma-facing material (PFM) for next-step fusion devices. In this work, an analytic mixed-material erosion model is developed by calculating the physical (via SDTrimSP) and chemical (via empirical scalings) sputtering yield from SiC, Si, and C. The Si content in the near-surface SiC layer is predicted to increase during D plasma bombardment due to more efficient physical and chemical sputtering of C relative to Si. Silicon erosion from SiC thereby occurs primarily from sputtering of the enriched Si layer, rather than directly from the SiC itself. SiC coatings on ATJ graphite, manufactured via chemical vapor deposition, were exposed to repeated H-mode plasma discharges in the DIII-D tokamak to test this model. The qualitative trends from analytic modeling are reproduced by the experimental measurements, obtained via spectroscopic inference using the S/XB method. Quantitatively the model slightly under-predicts measured erosion rates, which is attributed to uncertainties in the ion impact angle distribution, as well as the effect of edge-localized modes. After exposure, minimal changes to the macroscopic or microscopic surface morphology of the SiC coatings were observed. Compositional analysis reveals Si enrichment of about 10%, in line with expectations from the erosion model. Extrapolating to a DEMO-type device, an order-of-magnitude decrease in impurity sourcing, and up to a factor of 2 decrease in impurity radiation, is expected with SiC walls, relative to graphite, if low C plasma impurity content can be achieved. These favorable erosion properties motivate further investigations of SiC as a low-Z, non-metallic PFM.

The use of near-term quantum devices that lack quantum error correction, for addressing quantum chemistry and physics problems, requires hybrid quantum-classical algorithms and techniques. Here, we present a process for obtaining the eigenenergy spectrum of electronic quantum systems. This is achieved by projecting the Hamiltonian of a quantum system onto a limited effective Hilbert space specified by a set of computational bases. From this projection, an effective Hamiltonian is obtained. Furthermore, a process for preparing short depth quantum circuits to measure the corresponding diagonal and off-diagonal terms of the effective Hamiltonian is given, whereby quantum entanglement and ancilla qubits are used. The effective Hamiltonian is then diagonalized on a classical computer using numerical algorithms to obtain the eigenvalues. The use case of this approach is demonstrated for ground state and excited states of BeH₂ and LiH molecules, and the density of states, which agrees well with exact solutions. Additionally, hardware demonstration is presented using IBM quantum devices for H₂ molecule.