Ugur Deneb Menda
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Ugur Deneb Menda has a total of 94 co-authors. Here are the top co-authors by number of shared publications:
Kubilay Kutlu
10 shared publicationsOrhan Özdemir
Yıldız Technical University 2 Department of Physics Davutpasa Campus, TR-34210 Esenler, Istanbul, Turkey
6 shared publications- Elvira Fortunato
CENIMAT|i3N Department of Materials Science School of Science and Technology NOVA University Lisbon and CEMOP/UNINOVA Caparica Portugal
5 shared publications - Manuel Joao Mendes
I3N/CENIMAT, Department of Materials Science, NOVA School of Science and Technology, and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal
5 shared publications Orhan Özdemir
Yıldız Technical University, Department of Physics, Esenler, Istanbul, Turkey
4 shared publications- Pelin Kavak
Department of Physics, Faculty of Arts and Science, Yildiz Technical University, Davutpasa Campus, Esenler, Istanbul, Turkey
4 shared publications
Latest Publications
- Open Access
- 12 February 2026
- Published by Elsevier in SSRN Electronic Journal
One-Step Surface Wafer Damage Removal for Improved Interface Passivation in Silicon Heterojunction Solar Cells
This work presents an optimisation study of silicon surface preparation for silicon heterojunction solar cells (SHJ) fabricated from surface-damaged wafers, aiming to ensure minimal surface defects and improved passivation at the crystalline silicon-hydrogenated amorphous silicon (c-Si/a-Si:H) interface. KOH etching conditions were optimized to remove diamond‑wire‑saw (DWS) damage on c‑Si while tuning nanoscale faceting for improved interface passivation. Namely, KOH 45% was used to smooth the surface and remove saw damage, while KOH 5% generated approximately 20 nm pyramidal‑like features in a single‑step, IPA‑free process. For the fabrication of SHJ solar cells with an Aluminium Back Surface Field (Al-BSF), intrinsic and n-type doped a-Si:H layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the front side of the devices. Two different (i)a-Si:H films, one dense, deposited with 50% hydrogen dilution, (id)a-Si:H, and the other, under-dense, using pure silane gas, (iud)a-Si:H, were used in different solar cells. A relative improvement of 18% in implied PCE (Suns‑Voc) was observed for KOH 5% with dense (id)a‑Si:H versus KOH 45%, which was attributed to the effect of nanoscale faceting created on the c‑Si surface by the 5% KOH treatment.
- 12 February 2026
- Published by Elsevier in SSRN Electronic Journal
Open AccessOne-Step Surface Wafer Damage Removal for Improved Interface Passivation in Silicon Heterojunction Solar Cells
This work presents an optimisation study of silicon surface preparation for silicon heterojunction solar cells (SHJ) fabricated from surface-damaged wafers, aiming to ensure minimal surface defects and improved passivation at the crystalline silicon-hydrogenated amorphous silicon (c-Si/a-Si:H) interface. KOH etching conditions were optimized to remove diamond‑wire‑saw (DWS) damage on c‑Si while tuning nanoscale faceting for improved interface passivation. Namely, KOH 45% was used to smooth the surface and remove saw damage, while KOH 5% generated approximately 20 nm pyramidal‑like features in a single‑step, IPA‑free process. For the fabrication of SHJ solar cells with an Aluminium Back Surface Field (Al-BSF), intrinsic and n-type doped a-Si:H layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the front side of the devices. Two different (i)a-Si:H films, one dense, deposited with 50% hydrogen dilution, (id)a-Si:H, and the other, under-dense, using pure silane gas, (iud)a-Si:H, were used in different solar cells. A relative improvement of 18% in implied PCE (Suns‑Voc) was observed for KOH 5% with dense (id)a‑Si:H versus KOH 45%, which was attributed to the effect of nanoscale faceting created on the c‑Si surface by the 5% KOH treatment.
- Open Access
- 30 September 2025
- Published by American Chemical Society (ACS) in ACS Applied Energy Materials
- Vol. 8 (19) , 14881-14892
Dual Spectral Matching in Perovskite Solar Cells via Upconverting plus Downshifting Nanoparticles
Maximizing solar cell efficiency is a critical step toward revolutionizing photovoltaic technologies and harnessing the full potential of light for energy conversion. This study investigates the incorporation of NaGdF4:Yb3+,Tm3+@NaGdF4:Eu3+ (TMN) and NaGdF4:Yb3+,Er3+@NaGdF4:Eu3+ (ERN) nanoparticles into perovskite solar cells (PSCs) to improve their power conversion efficiency. The nanoparticles were synthesized through thermolysis and characterized using multiple techniques, including photoluminescence spectroscopy, quantum yield measurements, transmission electron microscopy, X-ray diffraction, solar simulation, and external quantum efficiency assessments. These lanthanide-doped NPs exhibited strong downshifting and minor upconversion luminescence, acting like optical translators that reshape poorly absorbed light into usable wavelengths. Devices incorporating the ERN nanoparticles demonstrated a 22.19% relative increase in power conversion efficiency, while those with TMN showed a 13.23% improvement. These enhancements are attributed mainly to the effective downshifting emission of Eu3+ and improved surface passivation from the core–shell architecture, which together reduce recombination losses and improve charge carrier dynamics. These findings underscore the potential of photon-converting lanthanide-based materials to address spectral absorption limitations in PSCs, offering a promising route toward next-generation photovoltaic technologies.
- 30 September 2025
- Published by American Chemical Society (ACS) in ACS Applied Energy Materials
- Vol. 8 (19) , 14881-14892
Open AccessDual Spectral Matching in Perovskite Solar Cells via Upconverting plus Downshifting Nanoparticles
Maximizing solar cell efficiency is a critical step toward revolutionizing photovoltaic technologies and harnessing the full potential of light for energy conversion. This study investigates the incorporation of NaGdF4:Yb3+,Tm3+@NaGdF4:Eu3+ (TMN) and NaGdF4:Yb3+,Er3+@NaGdF4:Eu3+ (ERN) nanoparticles into perovskite solar cells (PSCs) to improve their power conversion efficiency. The nanoparticles were synthesized through thermolysis and characterized using multiple techniques, including photoluminescence spectroscopy, quantum yield measurements, transmission electron microscopy, X-ray diffraction, solar simulation, and external quantum efficiency assessments. These lanthanide-doped NPs exhibited strong downshifting and minor upconversion luminescence, acting like optical translators that reshape poorly absorbed light into usable wavelengths. Devices incorporating the ERN nanoparticles demonstrated a 22.19% relative increase in power conversion efficiency, while those with TMN showed a 13.23% improvement. These enhancements are attributed mainly to the effective downshifting emission of Eu3+ and improved surface passivation from the core–shell architecture, which together reduce recombination losses and improve charge carrier dynamics. These findings underscore the potential of photon-converting lanthanide-based materials to address spectral absorption limitations in PSCs, offering a promising route toward next-generation photovoltaic technologies.
- Open Access
- 29 August 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (17) , 2447
Sub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.
- 29 August 2023
- Published by MDPI AG in Nanomaterials
- Vol. 13 (17) , 2447
Open AccessSub-Bandgap Sensitization of Perovskite Semiconductors via Colloidal Quantum Dots Incorporation
By taking advantage of the outstanding intrinsic optoelectronic properties of perovskite-based photovoltaic materials, together with the strong near-infrared (NIR) absorption and electronic confinement in PbS quantum dots (QDs), sub-bandgap photocurrent generation is possible, opening the way for solar cell efficiencies surpassing the classical limits. The present study shows an effective methodology for the inclusion of high densities of colloidal PbS QDs in a MAPbI3 (methylammonium lead iodide) perovskite matrix as a means to enhance the spectral window of photon absorption of the perovskite host film and allow photocurrent production below its bandgap. The QDs were introduced in the perovskite matrix in different sizes and concentrations to study the formation of quantum-confined levels within the host bandgap and the potential formation of a delocalized intermediate mini-band (IB). Pronounced sub-bandgap (in NIR) absorption was optically confirmed with the introduction of QDs in the perovskite. The consequent photocurrent generation was demonstrated via photoconductivity measurements, which indicated IB establishment in the films. Despite verifying the reduced crystallinity of the MAPbI3 matrix with a higher concentration and size of the embedded QDs, the nanostructured films showed pronounced enhancement (above 10-fold) in NIR absorption and consequent photocurrent generation at photon energies below the perovskite bandgap.
- Open Access
- 1 May 2023
- Published by Wiley in Advanced Optical Materials
- Vol. 11 (15)
Optically‐Boosted Planar IBC Solar Cells with Electrically‐Harmless Photonic Nanocoatings
Advanced light management via front‐coated photonic nanostructures is a promising strategy to enhance photovoltaic (PV) efficiency through wave‐optical light‐trapping (LT) effects, avoiding the conventional texturing processes that induce the degradation of electrical performance due to increased carrier recombination. Titanium dioxide (TiO2) honeycomb arrays with different geometry are engineered through a highly‐scalable colloidal lithography method on flat crystalline silicon (c‐Si) wafers and tested on standard planar c‐Si interdigitated back‐contact solar cells (pIBCSCs). The photonic‐structured wafers achieve an optical photocurrent of 36.6 mA cm−2, mainly due to a broad anti‐reflection effect from the 693 nm thick nanostructured coatings. In contrast, the pIBCSC test devices reach 14% efficiency with 679 nm thick TiO2 nanostructures, corresponding to a ≈30% efficiency gain relative to uncoated pIBCSCs. In addition, several designed structures show unmatched angular acceptance enhancements in efficiency (up to 63% gain) and photocurrent density (up to 68% gain). The high‐performing (yet electrically harmless) LT scheme, here presented, entails an up‐and‐coming alternative to conventional texturing for c‐Si technological improvement that can be straightforwardly integrated into the established PV industry.
- 1 May 2023
- Published by Wiley in Advanced Optical Materials
- Vol. 11 (15)
Open AccessOptically‐Boosted Planar IBC Solar Cells with Electrically‐Harmless Photonic Nanocoatings
Advanced light management via front‐coated photonic nanostructures is a promising strategy to enhance photovoltaic (PV) efficiency through wave‐optical light‐trapping (LT) effects, avoiding the conventional texturing processes that induce the degradation of electrical performance due to increased carrier recombination. Titanium dioxide (TiO2) honeycomb arrays with different geometry are engineered through a highly‐scalable colloidal lithography method on flat crystalline silicon (c‐Si) wafers and tested on standard planar c‐Si interdigitated back‐contact solar cells (pIBCSCs). The photonic‐structured wafers achieve an optical photocurrent of 36.6 mA cm−2, mainly due to a broad anti‐reflection effect from the 693 nm thick nanostructured coatings. In contrast, the pIBCSC test devices reach 14% efficiency with 679 nm thick TiO2 nanostructures, corresponding to a ≈30% efficiency gain relative to uncoated pIBCSCs. In addition, several designed structures show unmatched angular acceptance enhancements in efficiency (up to 63% gain) and photocurrent density (up to 68% gain). The high‐performing (yet electrically harmless) LT scheme, here presented, entails an up‐and‐coming alternative to conventional texturing for c‐Si technological improvement that can be straightforwardly integrated into the established PV industry.
- Open Access
Orange Pickeringite from the Algares 30-Level Adit, Aljustrel Mine, Iberian Pyrite Belt, Portugal
The sheltered environment of the Algares +30 level adit (underground mine gallery) contributes to the preservation of secondary water-soluble minerals formed on the tunnel walls. The massive sulphide and related stockwork zone are hosted by the Mine Tuff volcanic unit and are exposed in the walls of the gallery, showing intense oxidation and hydrothermal alteration. Minerals from the halotrichite group were identified on the efflorescent salts, typically white fine-acicular crystals but also on aggregates with dark orange/brownish colour. Mineral characterization was performed using several methods and analytical techniques (XRD, XRF-WDS, SEM-EDS, DTA-TG), and the chemical formulas were calculated maintaining the ratio A:B ≅ 1:2 in accordance with the general formula of the halotrichite group, AB2(SO4)4·22H2O. This methodology allowed the assignment of the orange colour to the presence of trivalent iron on iron-rich pickeringite in partial substitution of aluminium.
Open AccessOrange Pickeringite from the Algares 30-Level Adit, Aljustrel Mine, Iberian Pyrite Belt, Portugal
The sheltered environment of the Algares +30 level adit (underground mine gallery) contributes to the preservation of secondary water-soluble minerals formed on the tunnel walls. The massive sulphide and related stockwork zone are hosted by the Mine Tuff volcanic unit and are exposed in the walls of the gallery, showing intense oxidation and hydrothermal alteration. Minerals from the halotrichite group were identified on the efflorescent salts, typically white fine-acicular crystals but also on aggregates with dark orange/brownish colour. Mineral characterization was performed using several methods and analytical techniques (XRD, XRF-WDS, SEM-EDS, DTA-TG), and the chemical formulas were calculated maintaining the ratio A:B ≅ 1:2 in accordance with the general formula of the halotrichite group, AB2(SO4)4·22H2O. This methodology allowed the assignment of the orange colour to the presence of trivalent iron on iron-rich pickeringite in partial substitution of aluminium.
- Open Access
Preparation and Characterization of Porous Scaffolds Based on Poly(3-hydroxybutyrate) and Poly(3-hydroxybutyrate-co-3-hydroxyvalerate)
Poly(hydroxyalkanoates) (PHAs) with different material properties, namely, the homopolymer poly(3-hydroxybutyrate), P(3HB), and the copolymer poly(3-hydroxybutyrate-co-3-hydroxyvalerate, P(3HB-co-3HV), with a 3HV of 25 wt.%, were used for the preparation of porous biopolymeric scaffolds. Solvent casting with particulate leaching (SCPL) and emulsion templating were evaluated to process these biopolymers in porous scaffolds. SCPL scaffolds were highly hydrophilic (>170% swelling in water) but fragile, probably due to the increase of the polymer’s polydispersity index and its high porosity (>50%). In contrast, the emulsion templating technique resulted in scaffolds with a good compromise between porosity (27–49% porosity) and hydrophilicity (>30% water swelling) and without impairing their mechanical properties (3.18–3.35 MPa tensile strength and 0.07–0.11 MPa Young’s Modulus). These specifications are in the same range compared to other polymer-based scaffolds developed for tissue engineering. P(3HB-co-3HV) displayed the best overall properties, namely, lower crystallinity (11.3%) and higher flexibility (14.8% elongation at break. Our findings highlight the potency of our natural biopolyesters for the future development of novel porous scaffolds in tissue engineering, thanks also to their safety and biodegradability.
Open AccessPreparation and Characterization of Porous Scaffolds Based on Poly(3-hydroxybutyrate) and Poly(3-hydroxybutyrate-co-3-hydroxyvalerate)
Poly(hydroxyalkanoates) (PHAs) with different material properties, namely, the homopolymer poly(3-hydroxybutyrate), P(3HB), and the copolymer poly(3-hydroxybutyrate-co-3-hydroxyvalerate, P(3HB-co-3HV), with a 3HV of 25 wt.%, were used for the preparation of porous biopolymeric scaffolds. Solvent casting with particulate leaching (SCPL) and emulsion templating were evaluated to process these biopolymers in porous scaffolds. SCPL scaffolds were highly hydrophilic (>170% swelling in water) but fragile, probably due to the increase of the polymer’s polydispersity index and its high porosity (>50%). In contrast, the emulsion templating technique resulted in scaffolds with a good compromise between porosity (27–49% porosity) and hydrophilicity (>30% water swelling) and without impairing their mechanical properties (3.18–3.35 MPa tensile strength and 0.07–0.11 MPa Young’s Modulus). These specifications are in the same range compared to other polymer-based scaffolds developed for tissue engineering. P(3HB-co-3HV) displayed the best overall properties, namely, lower crystallinity (11.3%) and higher flexibility (14.8% elongation at break. Our findings highlight the potency of our natural biopolyesters for the future development of novel porous scaffolds in tissue engineering, thanks also to their safety and biodegradability.
- Open Access
- 27 August 2021
- Published by Royal Society of Chemistry (RSC) in Materials Advances
- Vol. 2 (19) , 6344-6355
High-performance wide bandgap perovskite solar cells fabricated in ambient high-humidity conditions
Lead-halide perovskite solar cells (PSCs) are currently the most promising emergent thin-film photovoltaic technology, having already reached power conversion efficiency (PCE) levels of state-of-the-art wafer-based silicon cells. The class of wide bandgap PSCs has also demonstrated high PCE values, thus becoming highly attractive for top sub-cells in tandem devices constructed with silicon or other types of bottom sub-cells. In this study, wide bandgap double-halide (Cs0.17FA0.83PbI3−xBrx) perovskite absorbers were developed with different bromine content, aiming to obtain bandgap values between 1.66 to 1.74 eV, by a glovebox-free (ambient) procedure. Low-cost inorganic materials, i.e. TiO2 and CuSCN, were used for the electron and hole transport layers, respectively. The 1.70 eV bandgap perovskite resulted in the highest reproducibility and stability (>80% initial PCE after 3500 hours) properties of the PSCs, remarkably attaining 16.4% PCE even with ambient and high humidity (∼70%) fabrication conditions.
- 27 August 2021
- Published by Royal Society of Chemistry (RSC) in Materials Advances
- Vol. 2 (19) , 6344-6355
Open AccessHigh-performance wide bandgap perovskite solar cells fabricated in ambient high-humidity conditions
Lead-halide perovskite solar cells (PSCs) are currently the most promising emergent thin-film photovoltaic technology, having already reached power conversion efficiency (PCE) levels of state-of-the-art wafer-based silicon cells. The class of wide bandgap PSCs has also demonstrated high PCE values, thus becoming highly attractive for top sub-cells in tandem devices constructed with silicon or other types of bottom sub-cells. In this study, wide bandgap double-halide (Cs0.17FA0.83PbI3−xBrx) perovskite absorbers were developed with different bromine content, aiming to obtain bandgap values between 1.66 to 1.74 eV, by a glovebox-free (ambient) procedure. Low-cost inorganic materials, i.e. TiO2 and CuSCN, were used for the electron and hole transport layers, respectively. The 1.70 eV bandgap perovskite resulted in the highest reproducibility and stability (>80% initial PCE after 3500 hours) properties of the PSCs, remarkably attaining 16.4% PCE even with ambient and high humidity (∼70%) fabrication conditions.
- Open Access
Oxygen Plasma Treated-Electrospun Polyhydroxyalkanoate Scaffolds for Hydrophilicity Improvement and Cell Adhesion
Poly(hydroxyalkanoates) (PHAs) with differing material properties, namely, the homopolymer poly(3-hydroxybutyrate), P(3HB), the copolymer poly(3-hydroxybutyrate-co-3-hydroxyvalerate), P(3HB-co-3HV), with a 3HV content of 25 wt.% and a medium chain length PHA, and mcl-PHA, mainly composed of 3-hydroxydecanoate, were studied as scaffolding material for cell culture. P(3HB) and P(3HB-co-3HV) were individually spun into fibers, as well as blends of the mcl-PHA with each of the scl-PHAs. An overall biopolymer concentration of 4 wt.% was used to prepare the electrospinning solutions, using chloroform as the solvent. A stable electrospinning process and good quality fibers were obtained for a solution flow rate of 0.5 mL h−1, a needle tip collector distance of 20 cm and a voltage of 12 kV for P(3HB) and P(3HB-co-3HV) solutions, while for the mcl-PHA the distance was increased to 25 cm and the voltage to 15 kV. The scaffolds’ hydrophilicity was significantly increased under exposure to oxygen plasma as a surface treatment. Complete wetting was obtained for the oxygen plasma treated scaffolds and the water uptake degree increased in all treated scaffolds. The biopolymers crystallinity was not affected by the electrospinning process, while their treatment with oxygen plasma decreased their crystalline fraction. Human dermal fibroblasts were able to adhere and proliferate within the electrospun PHA-based scaffolds. The P(3HB-co-3HV): mcl-PHA oxygen plasma treated scaffold highlighted the most promising results with a cell adhesion rate of 40 ± 8%, compared to 14 ± 4% for the commercial oxygen plasma treated polystyrene scaffold AlvetexTM. Scaffolds based on P(3HB-co-3HV): mcl-PHA blends produced by electrospinning and submitted to oxygen plasma exposure are therefore promising biomaterials for the development of scaffolds for tissue engineering.
Open AccessOxygen Plasma Treated-Electrospun Polyhydroxyalkanoate Scaffolds for Hydrophilicity Improvement and Cell Adhesion
Poly(hydroxyalkanoates) (PHAs) with differing material properties, namely, the homopolymer poly(3-hydroxybutyrate), P(3HB), the copolymer poly(3-hydroxybutyrate-co-3-hydroxyvalerate), P(3HB-co-3HV), with a 3HV content of 25 wt.% and a medium chain length PHA, and mcl-PHA, mainly composed of 3-hydroxydecanoate, were studied as scaffolding material for cell culture. P(3HB) and P(3HB-co-3HV) were individually spun into fibers, as well as blends of the mcl-PHA with each of the scl-PHAs. An overall biopolymer concentration of 4 wt.% was used to prepare the electrospinning solutions, using chloroform as the solvent. A stable electrospinning process and good quality fibers were obtained for a solution flow rate of 0.5 mL h−1, a needle tip collector distance of 20 cm and a voltage of 12 kV for P(3HB) and P(3HB-co-3HV) solutions, while for the mcl-PHA the distance was increased to 25 cm and the voltage to 15 kV. The scaffolds’ hydrophilicity was significantly increased under exposure to oxygen plasma as a surface treatment. Complete wetting was obtained for the oxygen plasma treated scaffolds and the water uptake degree increased in all treated scaffolds. The biopolymers crystallinity was not affected by the electrospinning process, while their treatment with oxygen plasma decreased their crystalline fraction. Human dermal fibroblasts were able to adhere and proliferate within the electrospun PHA-based scaffolds. The P(3HB-co-3HV): mcl-PHA oxygen plasma treated scaffold highlighted the most promising results with a cell adhesion rate of 40 ± 8%, compared to 14 ± 4% for the commercial oxygen plasma treated polystyrene scaffold AlvetexTM. Scaffolds based on P(3HB-co-3HV): mcl-PHA blends produced by electrospinning and submitted to oxygen plasma exposure are therefore promising biomaterials for the development of scaffolds for tissue engineering.
- 1 August 2016
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 120 (5) , 054501
Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance
Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation of such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.
- 1 August 2016
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 120 (5) , 054501
Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance
Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use silicon suboxides as passivation layers—inserted between substrate and (front or rear) contacts—since such layers enable intentionally exacerbated band-offset asymmetry. Investigating all topologically possible passivation layer permutations and focussing on light and dark current-voltage characteristics, we confirm that to avoid fill factor losses, wider-bandgap silicon oxide films (of at least several nanometer thin) should be avoided in hole-collecting contacts. As a consequence, device implementation of such films as window layers—without degraded carrier collection—demands electron collection at the front and hole collection at the rear. Furthermore, at elevated operating temperatures, once possible carrier transport barriers are overcome by thermionic (field) emission, the device performance is mainly dictated by the passivation of its surfaces. In this context, compared to the standard amorphous silicon layers, the wide-bandgap oxide layers applied here passivate remarkably better at these temperatures, which may represent an additional benefit under practical operation conditions.
- 1 December 2015
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 40, 171-175
Adaptation of admittance analysis to extract interface traps of a-Si:H/c-Si heterojunctions
- 1 December 2015
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 40, 171-175
Adaptation of admittance analysis to extract interface traps of a-Si:H/c-Si heterojunctions