Isaku Kanno
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Research Interests
Isaku Kanno has a total of 185 co-authors. Here are the top co-authors by number of shared publications:
- Hidetoshi Kotera
Graduate School of Engineering, Kyoto University
14 shared publications - Sang Hyo Kweon
Kobe University
12 shared publications - Hirotaka Hida
Kobe University
7 shared publications - Takaaki Suzuki
Kyoto University
7 shared publications Hirotaka Hida
Department of Mechanical Engineering, Faculty of Engineering, Kobe University, Kobe, Japan
6 shared publications- Kiyotaka Tanaka
Department of Mechanical Engineering, Kobe University, Kobe 657-8501, Japan
6 shared publications
Latest Publications
- Open Access
- 18 August 2026
- Published by Elsevier in Results in Engineering
- Vol. 32
Optimization of piezoelectric MEMS scanning micromirror fabricated with magnesium substrate and bulk PZT
- 18 August 2026
- Published by Elsevier in Results in Engineering
- Vol. 32
Open AccessOptimization of piezoelectric MEMS scanning micromirror fabricated with magnesium substrate and bulk PZT
- 14 August 2026
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 65 (15) , 15SP08
Ferroelectricity of Mg and Mn co-substituted ZnO thin films
In this study, (Mg,Mn)-codoped ZnO (Zn 0.97−x (Mg x Mn 0.03 )O) epitaxial thin films were fabricated on (111)Pt/(0001) sapphire substrates by RF magnetron sputtering. Structural analysis revealed that the wurtzite structure with c -axis orientation was maintained over the Mg composition range of x = 0.05–0.53. The relative permittivity ( ϵ r ) remained nearly constant at 13–16 regardless of Mg composition. In contrast, Mn incorporation effectively improved the insulating properties of the films, resulting in a low dielectric loss (tan δ ) of less than 0.02 over the entire Mg composition range. Ferroelectric characterization demonstrated well-saturated P – E hysteresis loops with coercive electric fields ( E c ) of 2.9–3.3 MV cm −1 and remanent polarizations ( P r ) of 80–120 μC cm −2 . E c tended to increase with increasing Mg concentration, whereas P r decreased as the Mg concentration increased. Current density–electric field ( J – E ) measurements revealed that the leakage current density remained below 10 −5 A cm −2 and decreased with increasing Mg concentration.
- 14 August 2026
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 65 (15) , 15SP08
Ferroelectricity of Mg and Mn co-substituted ZnO thin films
In this study, (Mg,Mn)-codoped ZnO (Zn 0.97−x (Mg x Mn 0.03 )O) epitaxial thin films were fabricated on (111)Pt/(0001) sapphire substrates by RF magnetron sputtering. Structural analysis revealed that the wurtzite structure with c -axis orientation was maintained over the Mg composition range of x = 0.05–0.53. The relative permittivity ( ϵ r ) remained nearly constant at 13–16 regardless of Mg composition. In contrast, Mn incorporation effectively improved the insulating properties of the films, resulting in a low dielectric loss (tan δ ) of less than 0.02 over the entire Mg composition range. Ferroelectric characterization demonstrated well-saturated P – E hysteresis loops with coercive electric fields ( E c ) of 2.9–3.3 MV cm −1 and remanent polarizations ( P r ) of 80–120 μC cm −2 . E c tended to increase with increasing Mg concentration, whereas P r decreased as the Mg concentration increased. Current density–electric field ( J – E ) measurements revealed that the leakage current density remained below 10 −5 A cm −2 and decreased with increasing Mg concentration.
- Open Access
- 26 March 2026
- Published by Elsevier in Acta Materialia
- Vol. 311
Layer configuration-driven phase engineering of Sol-Gel epitaxial Pb(Zr,Ti)O3 thin films for high piezoelectricity on silicon substrate
- 26 March 2026
- Published by Elsevier in Acta Materialia
- Vol. 311
Open AccessLayer configuration-driven phase engineering of Sol-Gel epitaxial Pb(Zr,Ti)O3 thin films for high piezoelectricity on silicon substrate
- Open Access
- 16 February 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 128 (7)
Compositional and thickness dependence of ferroelectric Zn(Ce,Mn)O epitaxial thin films
In this study, we investigated the composition and thickness dependence of ferroelectricity in c-axis-oriented Zn1−x(Ce,Mn)xO (Zn(Ce,Mn)O) epitaxial thin films co-doped with Ce and Mn in an approximately 1:1 ratio. With increasing (Ce,Mn) doping concentration, the c-axis length decreased while the a-axis length increased, and the c/a ratio decreased to 1.581 with 7% (Ce,Mn) doping. Meanwhile, (Ce,Mn) doping reduced leakage current and dielectric loss, confirming the contribution of Mn doping. In the Zn(Ce,Mn)O thin films doped with 7%–15% (Ce,Mn), clear ferroelectricity was confirmed. The 7% and 11% (Ce,Mn)-doped Zn(Ce,Mn)O thin films exhibited high remanent polarization (Pr) exceeding 80 μC/cm2, while the coercive electric field (Ec) was approximately 2.5 MV/cm, independent of the doping concentration. Notably, a high Pr exceeding 100 μC/cm2 was also observed in the ZnMnO epitaxial thin films without Ce doping, and Pr decreased with decreasing Ce concentration. For the 11% (Ce,Mn)-doped Zn(Ce,Mn)O thin film, the thickness dependence of ferroelectricity was investigated. A decrease in Pr was observed for film thicknesses below 50 nm. However, ferroelectricity with Pr of 15 μC/cm2 was confirmed even at a film thickness of 30 nm. At this thickness, the polarization switching voltage can be significantly reduced to approximately 9 V. The ferroelectric nature of the 30 nm-thick Zn(Ce,Mn)O thin films was also confirmed by observing polarization switching via piezoresponse force microscopy.
- 16 February 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 128 (7)
Open AccessCompositional and thickness dependence of ferroelectric Zn(Ce,Mn)O epitaxial thin films
In this study, we investigated the composition and thickness dependence of ferroelectricity in c-axis-oriented Zn1−x(Ce,Mn)xO (Zn(Ce,Mn)O) epitaxial thin films co-doped with Ce and Mn in an approximately 1:1 ratio. With increasing (Ce,Mn) doping concentration, the c-axis length decreased while the a-axis length increased, and the c/a ratio decreased to 1.581 with 7% (Ce,Mn) doping. Meanwhile, (Ce,Mn) doping reduced leakage current and dielectric loss, confirming the contribution of Mn doping. In the Zn(Ce,Mn)O thin films doped with 7%–15% (Ce,Mn), clear ferroelectricity was confirmed. The 7% and 11% (Ce,Mn)-doped Zn(Ce,Mn)O thin films exhibited high remanent polarization (Pr) exceeding 80 μC/cm2, while the coercive electric field (Ec) was approximately 2.5 MV/cm, independent of the doping concentration. Notably, a high Pr exceeding 100 μC/cm2 was also observed in the ZnMnO epitaxial thin films without Ce doping, and Pr decreased with decreasing Ce concentration. For the 11% (Ce,Mn)-doped Zn(Ce,Mn)O thin film, the thickness dependence of ferroelectricity was investigated. A decrease in Pr was observed for film thicknesses below 50 nm. However, ferroelectricity with Pr of 15 μC/cm2 was confirmed even at a film thickness of 30 nm. At this thickness, the polarization switching voltage can be significantly reduced to approximately 9 V. The ferroelectric nature of the 30 nm-thick Zn(Ce,Mn)O thin films was also confirmed by observing polarization switching via piezoresponse force microscopy.
- Open Access
- 1 February 2026
- Published by AIP Publishing in APL Materials
- Vol. 14 (2)
Unveiling switching kinetics in low-coercive-field wurtzite Zn0.89(Ce,Mn)0.11O ferroelectric films
Wurtzite ferroelectric films with stable ferroelectric phases exhibit significantly larger remanent polarization (Pr) compared to other materials, positing them as promising candidates for next-generation non-volatile memories. However, their intrinsically high coercive field (Ec) remains a critical challenge for low-power device operation, necessitating a comprehensive understanding of its underlying origin. In this work, the frequency- and time-dependent switching behavior in (Ce,Mn)-substituted ZnO [Zn0.89(Ce,Mn)0.11O] thin films is systematically investigated, and compared with (Al0.8Sc0.2)N films. The switching process follows the Kolmogorov–Avrami–Ishibashi model, consistent with the behavior observed in (Al0.8Sc0.2)N, and Ec is found to be determined by the activation field (Ea). Through pulse switching and PUND measurements across a broad temperature range, Zn0.89(Ce,Mn)0.11O shows much lower Ea and Ec than (Al0.8Sc0.2)N, while maintaining stable Pr. The origin of Ea is found to correlate with the nucleation energy barrier and threshold field independent of temperature. Furthermore, a comprehensive map of Ec as a function of time and temperature is established, offering critical insight into the operational window for ferroelectric memory devices. These findings provide a deeper understanding of the switching physics in wurtzite ferroelectrics and suggest strategies for tailoring Ec.
- 1 February 2026
- Published by AIP Publishing in APL Materials
- Vol. 14 (2)
Open AccessUnveiling switching kinetics in low-coercive-field wurtzite Zn0.89(Ce,Mn)0.11O ferroelectric films
Wurtzite ferroelectric films with stable ferroelectric phases exhibit significantly larger remanent polarization (Pr) compared to other materials, positing them as promising candidates for next-generation non-volatile memories. However, their intrinsically high coercive field (Ec) remains a critical challenge for low-power device operation, necessitating a comprehensive understanding of its underlying origin. In this work, the frequency- and time-dependent switching behavior in (Ce,Mn)-substituted ZnO [Zn0.89(Ce,Mn)0.11O] thin films is systematically investigated, and compared with (Al0.8Sc0.2)N films. The switching process follows the Kolmogorov–Avrami–Ishibashi model, consistent with the behavior observed in (Al0.8Sc0.2)N, and Ec is found to be determined by the activation field (Ea). Through pulse switching and PUND measurements across a broad temperature range, Zn0.89(Ce,Mn)0.11O shows much lower Ea and Ec than (Al0.8Sc0.2)N, while maintaining stable Pr. The origin of Ea is found to correlate with the nucleation energy barrier and threshold field independent of temperature. Furthermore, a comprehensive map of Ec as a function of time and temperature is established, offering critical insight into the operational window for ferroelectric memory devices. These findings provide a deeper understanding of the switching physics in wurtzite ferroelectrics and suggest strategies for tailoring Ec.
- 18 September 2025
- Published by Springer Nature in Journal of Ocean Engineering and Marine Energy
- Vol. 12 (1) , 73-86
Conceptual turbine design for the Darrieus-type wave energy converter
- 18 September 2025
- Published by Springer Nature in Journal of Ocean Engineering and Marine Energy
- Vol. 12 (1) , 73-86
Conceptual turbine design for the Darrieus-type wave energy converter
- 13 May 2025
- Published by Elsevier in Ceramics International
- Vol. 51 (21) , 34435-34439
Microstructure and electrical properties of (1-x)(K0.5Na0.5)NbO3-xBiFeO3 solid solution piezoelectric thin film deposited by RF magnetron sputtering
- 13 May 2025
- Published by Elsevier in Ceramics International
- Vol. 51 (21) , 34435-34439
Microstructure and electrical properties of (1-x)(K0.5Na0.5)NbO3-xBiFeO3 solid solution piezoelectric thin film deposited by RF magnetron sputtering
- Open Access
- 25 April 2025
- Published by Springer Nature in Scientific Reports
- Vol. 15 (1) , 1-6
In-situ XAFS measurements of amorphous Li3PO4-doped V2O5 cathode for all-solid-state thin-film Li-ion batteries
In this study, in-situ X-ray absorption fine structure (XAFS) measurements were conducted on amorphous Li3PO4-doped V2O5 (VO-LPO) cathode in an all-solid-state thin-film lithium-ion battery to observe the behavior of Li ions during charge/discharge. The thin-film lithium-ion battery was fabricated by sputtering deposition and consisted of an amorphous multilayer structure with VO-LPO, LiPON, and Si as cathode, electrolyte, and anode, respectively. In X-ray absorption near edge structure (XANES) measurements, the energy shift of the Vanadium K-edge indicated that the valence of V changed from 4.64 to 5.11 in the cathode during charge/discharge processes. This result indicates that Li ions were removed and inserted into the amorphous VO-LPO cathode layer. The pre-edge peak intensity also increased during charging and decreased during discharging. Additionally, extended X-ray absorption fine structure (EXAFS) measurements indicated that the V-O bond distance shifted during charge/discharge process. From these measurements, we clearly observed that the coordination symmetry and structure around V in the amorphous VO-LPO cathode changed with the charge/discharge reaction.
- 25 April 2025
- Published by Springer Nature in Scientific Reports
- Vol. 15 (1) , 1-6
Open AccessIn-situ XAFS measurements of amorphous Li3PO4-doped V2O5 cathode for all-solid-state thin-film Li-ion batteries
In this study, in-situ X-ray absorption fine structure (XAFS) measurements were conducted on amorphous Li3PO4-doped V2O5 (VO-LPO) cathode in an all-solid-state thin-film lithium-ion battery to observe the behavior of Li ions during charge/discharge. The thin-film lithium-ion battery was fabricated by sputtering deposition and consisted of an amorphous multilayer structure with VO-LPO, LiPON, and Si as cathode, electrolyte, and anode, respectively. In X-ray absorption near edge structure (XANES) measurements, the energy shift of the Vanadium K-edge indicated that the valence of V changed from 4.64 to 5.11 in the cathode during charge/discharge processes. This result indicates that Li ions were removed and inserted into the amorphous VO-LPO cathode layer. The pre-edge peak intensity also increased during charging and decreased during discharging. Additionally, extended X-ray absorption fine structure (EXAFS) measurements indicated that the V-O bond distance shifted during charge/discharge process. From these measurements, we clearly observed that the coordination symmetry and structure around V in the amorphous VO-LPO cathode changed with the charge/discharge reaction.
- Open Access
- 28 February 2025
- Published by The Korean Society of Ocean Engineers in Journal of Ocean Engineering and Technology
- Vol. 39 (1) , 63-72
Electrical Generator Design for Darrieus-Type Wave Energy Converter
In this study, an electrical generator was designed for a wave energy converter in which the electricity is generated via horizontal axis-oriented Darrieus turbines installed in the naturally oscillating water near the breaking wave zone. The design goal is to achieve an average output power of >10 kW at 180 rpm, with safe underwater installation and waterproof construction. To verify the expected performance, a scaled-down generator was built with identical configurations, with the stack length reduced from 400 mm to 60 mm, and the expected output power reduced to >1 kW at 180 rpm under test conditions. The evaluation results showed that the desired characteristics were achieved with an output power of 1356 W at 180 rpm and an efficiency of 80.1%. Further, our height-adjustable platform ensures high efficiency at both low and high tide. The variable stack length in our WEC design allows the output power to be adapted to the specific location conditions. Once the experimental tests with the small-scale turbines are accomplished, we plan to conduct field tests with our full-scale wave energy converter.
- 28 February 2025
- Published by The Korean Society of Ocean Engineers in Journal of Ocean Engineering and Technology
- Vol. 39 (1) , 63-72
Open AccessElectrical Generator Design for Darrieus-Type Wave Energy Converter
In this study, an electrical generator was designed for a wave energy converter in which the electricity is generated via horizontal axis-oriented Darrieus turbines installed in the naturally oscillating water near the breaking wave zone. The design goal is to achieve an average output power of >10 kW at 180 rpm, with safe underwater installation and waterproof construction. To verify the expected performance, a scaled-down generator was built with identical configurations, with the stack length reduced from 400 mm to 60 mm, and the expected output power reduced to >1 kW at 180 rpm under test conditions. The evaluation results showed that the desired characteristics were achieved with an output power of 1356 W at 180 rpm and an efficiency of 80.1%. Further, our height-adjustable platform ensures high efficiency at both low and high tide. The variable stack length in our WEC design allows the output power to be adapted to the specific location conditions. Once the experimental tests with the small-scale turbines are accomplished, we plan to conduct field tests with our full-scale wave energy converter.
- 3 December 2024
- Published by MYU K.K. in Sensors and Materials
- Vol. 36 (12) , 5109-5115
Card-type Piezoelectric Energy Harvesters of Pb(Zr,Ti)O3 Thin Films on Stainless Steel Foils
- 3 December 2024
- Published by MYU K.K. in Sensors and Materials
- Vol. 36 (12) , 5109-5115
Card-type Piezoelectric Energy Harvesters of Pb(Zr,Ti)O3 Thin Films on Stainless Steel Foils