Longsheng Wu

Silicon photonics (SiPh) has emerged as a promising technology for photonic integrated circuits (PICs). One of the basic components in SiPh is the directional coupler (DC), which plays an important role in signal monitoring with the requirement of low wavelength dependence and low loss. This paper proposes a broadband and low-loss DC designed for signal power tapping on the 3 μm silicon-on-insulator (SOI) waveguide platform. By utilizing the advantages of multi-micron waveguides and replacing one of the straight waveguides with an optimized arc-shaped waveguide in the coupling region, the proposed DC enhances spectral stability and improves transmission with negligible loss. Experimental evidence indicates that the proposed DC showcases a minimal variation in the tapping ratio. From 1470 nm to 1630 nm, the largest deviation away from the tapping ratio at 1550 nm is 1.433%. Additionally, the device exhibits a low excess loss of −0.27 dB. These results suggest that the proposed device is well-suited to reliable signal power tapping and monitoring, particularly within PICs.

In this work, a vertical N-I-P germanium (Ge) photodetector (PD) with a multi-mode waveguide input is presented. The fabricated devices exhibit a low dark current of 10 nA at bias of −1 V, and a high responsivity of exceeding 0.75 A/W over the wavelength range from 1270 to 1350 nm. High-frequency characteristics measurements show that the photodetector has a 3 dB opto-electrical (OE) bandwidth of 23 GHz under −3 V bias, which can be further improved by optimization of the photodetector configuration. A 50 Gb/s clear eye diagram with a non-return-to-zero (NRZ) modulation format is demonstrated. By using a single-mode excitation source, which is used to simulate light coming from the wavelength division multiplexing (WDM) devices, and sweeping its position, it is shown that the multi-mode input photodetector can be utilized in a WDM receiver to achieve both high responsivity and a flat-top passband.

Mode overlapping promotes the capability in manipulating optical absorption. Based on such a mechanism, an all-dielectric metasurface has the capability of perfectly absorbing incident optical energy without the assistance of a mirror. Here, an array of thin germanium waveguide-like units is designed as a special absorber possessing some advantages by overlapping two localized resonant modes. Such a thin absorber can realize strong absorption even though the germanium material is of low loss at the O band. It is found that the absorption capability is about three times stronger than that of an unpatterned germanium film with the same thickness, and wideband strong absorption is obtained at the same time. The structure is continuous so that it can conduct carriers in photodetection. The suggested method would be heuristic in the photodetection area.

Silicon photonics is considered to be an ideal solution as optical interconnect in radiation environments. Our previous study has demonstrated experimentally that radiation responses of device are related to waveguide size, and devices with thick top silicon waveguide layers are expected to be less sensitive to irradiation. Here, we design radiation-resistant arrayed waveguide gratings and Mach-Zehnder interferometers based on silicon-on-insulator with 3 µm-thick silicon optical waveguide platform. The devices are exposed to ⁶⁰Co γ-ray irradiation up to 41 Mrad(Si) and 170-keV proton irradiation with total fluences from 1×10¹³ to 1×10¹⁶ p/cm² to evaluate performance after irradiation. The results show that these devices can function well and have potential application in harsh radiation environments.

In this work, the radiation responses of silicon photonic passive devices built in silicon-on-insulator (SOI) technology are investigated through high energy neutron and ⁶⁰Co γ-ray irradiation. The wavelengths of both micro-ring resonators (MRRs) and Mach-Zehnder interferometers (MZIs) exhibit blue shifts after high-energy neutron irradiation to a fluence of 1×10¹² n/cm²; the blue shift is smaller in MZI devices than in MRRs due to different waveguide widths. Devices with SiO₂ upper cladding layer show strong tolerance to irradiation. Neutron irradiation leads to slight changes in the crystal symmetry in the Si cores of the optical devices and accelerated oxidization for devices without SiO₂ cladding. A 2-µm top cladding of SiO₂ layer significantly improves the radiation tolerance of these passive photonic devices.

A technical investigation, research and implementation is presented to correct column fixed pattern noise and black level in large array Complementary metal oxide semiconductor (CMOS) image sensor. Through making a comparison among reported solution, and give large array CMOS image sensor design and considerations, according to our previous analysis on non‐ideal factor and error source of piecewise Digital to analog converter (DAC) in multi‐channels, an improving accurate piecewise DAC with adaptive switch technique is developed. The research theory has verified by a high dynamic range and low column Fixed pattern noise (FPN) CMOS image sensor prototype chip, which consisting of 8320×8320 pixel array was designed and fabricated in 55nm CMOS 1P4M standard process. The chip active area is 48mm×48mm with a pixel size of 5.7μm×5.7μm. The measured results achieved a high intrinsic dynamic range of 75dB, a low FPN and black level of 0.06%, a low photo response non‐uniformity of 1.5% respectively, and an excellent raw sample image taken by the prototype sensor.

An improved global shutter pixel structure with extended output range and linearity of compensation is proposed for CMOS image sensor. The potential switching of the sample and hold capacitor bottom plate outside the array is used to solve the problem of the serious swing limitation, which will attenuate the dynamic range of the image sensor. The non‐linear problem caused by the substrate bias effect in the output process of the pixel source follower is solved by using the mirror FD point negative feedback self‐establishment technology outside the array. The approach proposed in this paper has been verified in a global shutter CMOS image sensor with a scale of 1024×1024 pixels. The test results show that the output range is expanded from 0.95V to 2V, and the error introduced by the nonlinearity is sharply reduced from 280mV to 0.3mV. Most importantly, the output range expansion circuit does not increase the additional pixel area and the power consumption. The power consumption of linearity correction circuit is only 23.1μW, accounting for less than 0.01% of the whole chip power consumption.

We present the design of an adiabatic taper coupled Ge_1−xSi _x electro-absorption modulator, which is based on Franz-Keldysh effect. The device has an active region of 0.8×50 µm², an extinction ratio of more than 6 dB and an insertion loss less than 3 dB at the wavelength of 1550 nm. The operating bandwidth can be broadened to more than 90 nm by an AlN block assisted heater with only 6.2 mW energy consumption. Moreover, the operating wavelength shift caused by material composition deviation can be compensated to the expected wavelength by thermal tuning. This design may play an important role in next-generation, high-density optical integrations for datacom and high-performance computing.