Chongjie Mo

Chongjie Mo

*This is an algorithmically generated author record based on publicly available information.

Current Organizations / Institutes

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Previous Organizations / Institutes

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Chongjie Mo has a total of 82 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Open Access

    First-principles estimation of plasma jet properties from x-ray Thomson scattering spectrum in the double-cone ignition scheme

    by N.-Y. Shi, Jiong-Hang Liang, Chongjie Mo, D. Wu, H. Liu, Y. Dai, X.-H. Yuan, Z. Zhang, J. Zhang

    In the double-cone ignition (DCI) scheme, the unique configuration of the gold cones facilitates plasma compression. However, the gold impurity in the plasma jet have a potential impact on the energy conversion efficiency and final fusion yield. In this study, we reanalyzed the x-ray Thomson scattering spectrum from DCI-R7 experiments by combining the imaginary-time correlation function method with first-principles calculations. Our findings revise the previously diagnosed temperature of 50 ± 10 eV to 25.4 ± 1.0 eV , with a density of 8 ± 2 g cm − 3 and only 0.162 ± 0.015 % of gold impurity. These results provide clear evidence of the role played by the gold cones during the compression process, and demonstrate that the gold impurity fraction is well within acceptable limits.


  • Open Access

    Effects of Particle Migration on the Relaxation of Shock Wave Collisions

    by Hao Li, Bo Xu, Zixiang Yan, Xinyu Zhang, Chongjie Mo, Quanxi Xue, Xiazi Xiao, Hao Liu

    The non-equilibrium characteristics during the shock relaxation process hold a foundational position in various fields. In contrast to the propagation of a single shock wave, the collision process of two shock waves exhibits distinct non-equilibrium features. Employing non-equilibrium molecular dynamics, we simulated the collision of ultra-strong shock waves in a classical gas system, investigating the relationship between equilibrium relaxation time and shock intensity. Tracking the spatial migration of microscopic particles in the shock collision region during the relaxation process, we observed a significant contribution of particle migration to the average energy changes during relaxation. The discussion on particle migration provides a valuable new perspective for understanding the microscopic mechanisms of the relaxation process.

  • Superconductivity of VSe2 under pressure and charge doping: Suppressed charge density wave

    by Xin-Peng Fu, Zhen-Guo Fu, Chong-Jie Mo, Bao-Tian Wang, Peng-Fei Liu, Guo-Jun Zhao, Ning Hao, Ping Zhang

    By employing the first-principles calculations, the influence mechanism of external pressure and charge doping on the electron-phonon coupling (EPC) and superconductivity (SC) of bulk VSe2 is investigated. Our calculations reveal that with increasing pressure the charge density wave (CDW) of 1T−VSe2 is gradually suppressed, and a SC state subsequently emerges which is accompanied by a structural phase transition from the trigonal phase to a monoclinic phase at 15.5GPa. Increasing pressure from 15.5 to 35GPa, the SC transition temperature Tc of VSe2 slightly increases from 4.2 to 5.2K and no SC dome is found, which are in good agreement with the previous experimental results [S. Sahoo et al., Phys. Rev. B 101, 014514 (2020)]. Through electron- or hole-doping (denoted by ne and nh), the CDW order of the trigonal phase can be suppressed and SC states with Tc greater than 10.5 and 9.0K, respectively, emerge. The highest Tc under charge doping can be up to about 12K, and a weak double-dome like dependence of Tc on ne and nh is found. Combining systematical analysis of effects of pressure and charge doping, we demonstrate that the Kohn anomalies of phonons at certain Q points associated with the in-plane vibrations of V atoms play key roles in strengthening the EPC, which brings about the intriguing SC in VSe2. However, due to the weak pressure-induced modifications of phonon spectrum as well as Fermi surface (FS), the changes of EPC and Tc caused by pressure are not significant. Interestingly, charge doping will produce a local flat band along ΓA direction near the FS, which is mainly contributed by V 3d-orbitals, and result in large values of electronic density of states at Fermi level. Therefore, the effects caused by charge doping to the electronic structures, phonon anomalies, EPC, and Tc are evident. Our findings may provide a promising understanding to the pressure and doping-dependent SC of VSe2, and may be valuable for designing new materials with enhanced SC through the strategic manipulation of electronic and phononic properties.


  • Open Access

    Inverse design of the radiation temperature for indirect laser-driven equation-of-state measurement

    by Lingrui Liao, Jingxiang Shen, Liang Sun, Chongjie Mo, Wei Kang

    The theoretical design for the time profile of radiation temperature plays an important role in indirect laser-driven equation-of-state measurement, which severely relies on a large number of radiation hydrodynamic simulations. In this work, we provide a concise data-driven method for optimizing the radiation temperature profile, which combines a time-varying Volterra model with an improvement achieved by data generation via radiation hydrodynamic simulations utilizing random perturbations in a skew normal distribution as inputs. We find that the time-varying Volterra model can be used to investigate the time-dependent relationship between the radiation temperature and the key physical quantities of interest, such as shock-wave velocity and ablation drive pressure. With this method, we realize the inverse designs of the radiation temperature profiles for planar dynamic shock and ramp compressions according to the desired shock-wave velocity and drive pressure, respectively, which shows the advantage of practical application in experiments.


  • Open Access

    A composite ansatz for the calculation of dynamical structure factor

    by Yupei Zhang, Chongjie Mo, Ping Zhang, Wei Kang

    We propose an ansatz without adjustable parameters for the calculation of dynamical structure factor. The ansatz combines quasi-particle Green's function, especially the contribution from the renormalization factor, and the exchange-correlation kernel from time-dependent density functional theory together, verified for typical metals and semiconductors from plasmon excitation regime to Compton scattering regime. It has the capability to reconcile both small-angle and large-angle x-ray scattering (IXS) signals with much improved accuracy, which can be used, as the theoretical base model, in inversely inferring electronic structures of condensed matter from IXS experimental signals directly. It may also used to diagnose thermal parameters, such as temperature and density, of dense plasmas in x-ray Thomson scattering experiments.

  • Open Access

    Phonon-mediated Migdal effect in semiconductor detectors

    by Zheng-Liang Liang, Chongjie Mo, Fawei Zheng, Ping Zhang

    The Migdal effect inside detectors provides a new possibility of probing the sub-GeV dark matter (DM) particles. While there has been well-established methods treating the Migdal effect in isolated atoms, a coherent and complete description of the valence electrons in semiconductor is still absent. The bremstrahlung-like approach is a promising attempt, but it turns invalid for DM masses below a few tens of MeV. In this paper, we lay out a framework where phonon is chosen as an effective degree of freedom to describe the Migdal effect in semiconductors. In this picture, a valence electron is excited to the conduction state via exchange of a virtual phonon, accompanied by a multi-phonon process triggered by an incident DM particle. Under the incoherent approximation, it turns out that this approach can effectively push the sensitivities of the semiconductor targets further down to the MeV DM mass region.

  • Open Access

    Phonon-mediated Migdal effect in semiconductor detectors

    by Zheng-Liang Liang, Chongjie Mo, Fawei Zheng, Ping Zhang

    The Migdal effect inside detectors provides a new possibility of probing the sub-GeV dark matter (DM) particles. While there has been well-established methods treating the Migdal effect in isolated atoms, a coherent and complete description of the valence electrons in a semiconductor is still absent. The bremstrahlunglike approach is a promising attempt, but it turns invalid for DM masses below a few tens of MeV. In this paper, we lay out a framework where phonon is chosen as an effective degree of freedom to describe the Migdal effect in semiconductors. In this picture, a valence electron is excited to the conduction state via exchange of a virtual phonon, accompanied by a multiphonon process triggered by an incident DM particle. Under the incoherent approximation, it turns out that this approach can effectively push the sensitivities of the semiconductor targets further down to the MeV DM mass region.


  • Open Access

    In-medium screening effects for the Galactic halo and solar-reflected dark matter detection in semiconductor targets

    by Zheng-Liang Liang, Chongjie Mo, Ping Zhang

    Recently, the importance of the electronic many-body effect in the dark matter (DM) detection has been recognized, and a coherent formulation of the DM-electron scattering in terms of the dielectric response of the target material has been well established in literatures. In this paper, we put relevant formulas into practical density functional theory (DFT) estimation of the excitation event rates for the diamond and silicon semiconductor targets. Moreover, we compare the event rates calculated from the energy loss functions with and without the local field effects. For a consistency check of this numerical method, we also compare the differential spectrum and detection reach of the silicon target with those computed with the GPAW code. It turns out that these DFT approaches are quite consistent and robust. As an interesting extension, we also investigate the in-medium effect on the detection of the solar-reflected DM flux in silicon-based detectors, where the screening effect is found to be less remarkable than on detection of the Galactic DM, due to the high energies of the reflected DM particles.


  • Open Access

    Self-diffusion coefficient and sound velocity of Fe-Ni-O fluid: implications for the stratification of Earth’s outer core

    by Wei-Jie Li, Zi Li, Chong-Jie Mo, Xian-Tu He, Cong Wang, Ping Zhang

    It is experimentally reported that the stratified layer atop Earth’s outer core is hundreds of kilometers thick with a maximum sound velocity reduction of 0.3% relative to the preliminary reference Earth model. However, why the sound velocity atop the outer core is reduced remains theoretically unclear. In this paper, the Ni and vital light O in the outer core were both considered to have implications for the stratification of Earth’s core, including the stratification thickness and the sound velocity profile. Ab initio molecular dynamics simulations were performed on the Fe-Ni-O fluid under the conditions of Earth’s outer core, and the self-diffusion coefficients and ion-ion dynamic structure factors were calculated. The self-diffusion coefficient of O is (19.56±0.83)×10-9 m2s-1 at the core-mantle boundary. Combining the diffusion equation with the time evolution of the O self-diffusion coefficient, the calculated stratification thickness at present is 194.7 km. The calculated ion-ion dynamic structural factors indicate that the sound velocity in the outmost outer core near the stratified layer is 7.86 km/s. These results show that Fe-Ni-O is a possible composition of the stratified layer atop the outer core featuring an appropriate thickness and a reduced sound velocity, thereby shedding light on the dynamic behavior of Earth’s core.

  • Open Access

    Describing the Migdal effect with a bremsstrahlung-like process and many-body effects

    by Zheng-Liang Liang, Chongjie Mo, Fawei Zheng, Ping Zhang

    Recent theoretical studies have suggested that the suddenly recoiled atom struck by dark matter (DM) particle is much more likely to excite or lose its electrons than expected. Such Migdal effect provides a new avenue for exploring the sub-GeV DM particles. There have been various attempts to describe the Migdal effect in liquids and semiconductor targets. In this paper we incorporate the treatment of the bremsstrahlung process and the electronic many-body effects to give a full description of the Migdal effect in bulk semiconductor targets diamond and silicon. Compared with the results obtained with the atom-centered localized Wannier functions (WFs) under the framework of the tight-binding (TB) approximation, the method proposed in this study yields much larger event rates in the low energy regime, due to a $\omega^{-4}$ scaling. We also find that the effect of the bremsstrahlung photon mediating the Coulomb interaction between recoiled ion and the electron-hole pair is equivalent to that of the exchange of a single phonon.