Zeming Qi
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Zeming Qi has a total of 251 co-authors. Here are the top co-authors by number of shared publications:
Xuerui Cheng
School of Physics and Electronic Engineering, Zhengzhou University of Light Industry 3 , Zhengzhou, Henan 450002, China
7 shared publications- Miao Liu
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
6 shared publications - Chuansheng Hu
National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, Anhui 230029
5 shared publications Chuansheng Hu
National Synchrotron Radiation Laboratory, University of Science and Technology of China 1 , Hefei, Anhui 230029, People's Republic of China
4 shared publications- Hengjie Liu
University of Science and Technology of China
4 shared publications - Jianhua Chang
School of Electronics and Information Engineering, Nanjing University of Information Science and Technology, Nanjing, China
4 shared publications
Latest Publications
- 3 September 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 140 (9)
Pressure-modulated anisotropic optical responses in van der Waals NbOCl2
NbOCl2 is an emerging layered van der Waals material with prominent anisotropy. In this work, we systematically investigate the anisotropic optical response and structural evolution of NbOCl2 under pressure up to 50 GPa by using polarized Raman spectroscopy, synchrotron polarized far-infrared spectroscopy, and polarized visible light absorption spectroscopy. A series of pressure-induced structure changes are identified, which are demonstrated to be closely correlated with the evolution of octahedral distortions. The initial ferroelectric phase transforms into an antiferroelectric phase within 2–8 GPa, remains in the antiferroelectric phase between 8 and 16 GPa, and further undergoes a transition to the paraelectric phase in the 16–21 GPa range. Meanwhile, the [NbO2Cl4] octahedral ordering undergoes a transition from a parallel to an antiparallel configuration, followed by a gradual reduction in octahedral distortion. A dramatic collapse of the optical bandgap is observed at pressures above 38 GPa, suggesting that the octahedral distortion may have been suppressed. This study provides an in-depth understanding of the anisotropic optical properties of NbOCl2 and offers important implications for the design and applications of future anisotropic optoelectronic devices based on this material.
- 3 September 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 140 (9)
Pressure-modulated anisotropic optical responses in van der Waals NbOCl2
NbOCl2 is an emerging layered van der Waals material with prominent anisotropy. In this work, we systematically investigate the anisotropic optical response and structural evolution of NbOCl2 under pressure up to 50 GPa by using polarized Raman spectroscopy, synchrotron polarized far-infrared spectroscopy, and polarized visible light absorption spectroscopy. A series of pressure-induced structure changes are identified, which are demonstrated to be closely correlated with the evolution of octahedral distortions. The initial ferroelectric phase transforms into an antiferroelectric phase within 2–8 GPa, remains in the antiferroelectric phase between 8 and 16 GPa, and further undergoes a transition to the paraelectric phase in the 16–21 GPa range. Meanwhile, the [NbO2Cl4] octahedral ordering undergoes a transition from a parallel to an antiparallel configuration, followed by a gradual reduction in octahedral distortion. A dramatic collapse of the optical bandgap is observed at pressures above 38 GPa, suggesting that the octahedral distortion may have been suppressed. This study provides an in-depth understanding of the anisotropic optical properties of NbOCl2 and offers important implications for the design and applications of future anisotropic optoelectronic devices based on this material.
- 17 August 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 129 (7)
Simultaneous launching of phonon polaritons with two distinct topologies in Lu2SiO5 at a single frequency
Simultaneously exciting phonon polaritons with distinct topologies in a single crystal at a unified excitation frequency offers a route to combine their different propagation characteristics. In this work, by selecting an appropriate crystal plane in Lu2SiO5, we investigated the gold-disk-patterned Lu2SiO5 crystal using scattering-type scanning near-field optical microscopy (s-SNOM) and achieved the simultaneous excitation of two phonon polaritons with hyperbolic and elliptic-like isofrequency contours at a single frequency. The hyperbolic and elliptic-like phonon polaritons are launched by the fabricated gold disks and the SNOM tip, respectively. The propagation wave of the elliptic-like phonon polaritons is reflected by the gold disks and then is detected by the SNOM tip again, resulting in a momentum that is twice the intrinsic momentum, which is further confirmed by attenuated total reflection spectroscopy measurements using a coupled ZnSe prism for excitation. Our finding significantly enriches the anisotropic propagation behavior of phonon polariton in a single crystal.
- 17 August 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 129 (7)
Simultaneous launching of phonon polaritons with two distinct topologies in Lu2SiO5 at a single frequency
Simultaneously exciting phonon polaritons with distinct topologies in a single crystal at a unified excitation frequency offers a route to combine their different propagation characteristics. In this work, by selecting an appropriate crystal plane in Lu2SiO5, we investigated the gold-disk-patterned Lu2SiO5 crystal using scattering-type scanning near-field optical microscopy (s-SNOM) and achieved the simultaneous excitation of two phonon polaritons with hyperbolic and elliptic-like isofrequency contours at a single frequency. The hyperbolic and elliptic-like phonon polaritons are launched by the fabricated gold disks and the SNOM tip, respectively. The propagation wave of the elliptic-like phonon polaritons is reflected by the gold disks and then is detected by the SNOM tip again, resulting in a momentum that is twice the intrinsic momentum, which is further confirmed by attenuated total reflection spectroscopy measurements using a coupled ZnSe prism for excitation. Our finding significantly enriches the anisotropic propagation behavior of phonon polariton in a single crystal.
- 25 June 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (6)
Direct identification of V N -H defects in p -GaN under electrical bias and elevated temperature
- 25 June 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (6)
Direct identification of V N -H defects in p -GaN under electrical bias and elevated temperature
- Open Access
- 13 May 2026
- Published by AIP Publishing in Matter and Radiation at Extremes
- Vol. 11 (4)
Revisiting the structural and optical properties of γ -N2
For decades, γ-N2 has been known to exist at very low temperatures and pressures, located in a tiny area of the nitrogen phase diagram. Recently, it was shown that γ-N2 occupies most of the P–T space usually associated with molecular phases such as δ, ɛ, and ζ, and that it plays a pivotal role in shaping nitrogen’s phase diagram. Using powder synchrotron X-ray diffraction, Raman and infrared spectroscopy, and density function theory calculations, we have investigated the structural and optical properties of γ-N2 in a wide P–T range. The combined X-ray diffraction and infrared spectroscopy results unequivocally demonstrate that γ-N2 adopts the monoclinic (P21/c space group) configuration with two N2 molecules per unit cell. It appears that the γ-N2 is structurally closely related to θ-N2, leading to both phases having very similar Raman signatures. Additionally, the Raman spectroscopy reveals a vibrational mode intensity resonance effect in both phases, caused by a strong vibrational coupling between the isotopic 15N14N and 14N2 vibrational excitations.
- 13 May 2026
- Published by AIP Publishing in Matter and Radiation at Extremes
- Vol. 11 (4)
Open AccessRevisiting the structural and optical properties of γ -N2
For decades, γ-N2 has been known to exist at very low temperatures and pressures, located in a tiny area of the nitrogen phase diagram. Recently, it was shown that γ-N2 occupies most of the P–T space usually associated with molecular phases such as δ, ɛ, and ζ, and that it plays a pivotal role in shaping nitrogen’s phase diagram. Using powder synchrotron X-ray diffraction, Raman and infrared spectroscopy, and density function theory calculations, we have investigated the structural and optical properties of γ-N2 in a wide P–T range. The combined X-ray diffraction and infrared spectroscopy results unequivocally demonstrate that γ-N2 adopts the monoclinic (P21/c space group) configuration with two N2 molecules per unit cell. It appears that the γ-N2 is structurally closely related to θ-N2, leading to both phases having very similar Raman signatures. Additionally, the Raman spectroscopy reveals a vibrational mode intensity resonance effect in both phases, caused by a strong vibrational coupling between the isotopic 15N14N and 14N2 vibrational excitations.
- 11 May 2026
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 14 (27) , 12234-12245
Lattice vibration characteristics and dielectric response mechanisms in low-temperature sintered SrSn(BO 3 ) 2 − x wt% LiF microwave ceramics for 5G microstrip antenna applications
In this study, SrSn(BO 3 ) 2 – x wt% LiF microwave ceramics were successfully prepared at 950 °C via conventional solid-state sintering.
- 11 May 2026
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 14 (27) , 12234-12245
Lattice vibration characteristics and dielectric response mechanisms in low-temperature sintered SrSn(BO 3 ) 2 − x wt% LiF microwave ceramics for 5G microstrip antenna applications
In this study, SrSn(BO 3 ) 2 – x wt% LiF microwave ceramics were successfully prepared at 950 °C via conventional solid-state sintering.
- 9 January 2026
- Published by Royal Society of Chemistry (RSC) in Dalton Transactions
- Vol. 55 (7) , 2930-2936
Nitrogen cycle on N-doped graphene loaded TiO 2 for efficient photocatalytic dinitrogen conversion
We demonstrate that N-sites on N-doped graphene/TiO 2 act as nitrogen carriers, sustaining NH 3 generation via a N-cycle. Nitrogen is detached from graphene for NH 3 synthesis and replenished by atmospheric N 2 .
- 9 January 2026
- Published by Royal Society of Chemistry (RSC) in Dalton Transactions
- Vol. 55 (7) , 2930-2936
Nitrogen cycle on N-doped graphene loaded TiO 2 for efficient photocatalytic dinitrogen conversion
We demonstrate that N-sites on N-doped graphene/TiO 2 act as nitrogen carriers, sustaining NH 3 generation via a N-cycle. Nitrogen is detached from graphene for NH 3 synthesis and replenished by atmospheric N 2 .
- 25 August 2025
- Published by American Physical Society (APS) in Physical Review Applied
- Vol. 24 (2)
Identifying the - complex in - : Combined infrared spectroscopy and ab initio dipole-moment analysis- 25 August 2025
- Published by American Physical Society (APS) in Physical Review Applied
- Vol. 24 (2)
Identifying the - complex in - : Combined infrared spectroscopy and ab initio dipole-moment analysis- Open Access
Ultra-Low Dielectric Constant Ca3(BO3)2 Microwave Ceramics and Their Performance Simulation in 5G Microstrip Patch Antennas
Ca3(BO3)2 microwave dielectric ceramics with space group R-3c (#167) were prepared by cold sintering, and their properties were systematically investigated. Phonon density of state diagrams for the Ca3(BO3)2 lattice were obtained based on first-principles calculations to provide a more comprehensive understanding of the lattice vibrational properties of the material. Raman scattering and infrared reflectance spectroscopy were employed to investigate the lattice vibrational characteristics, identifying two types of vibrational modes: internal modes associated with the planar bending and symmetric stretching vibrations of the [BO3] group, and external modes linked to the vibrations of the [CaO6] octahedron. The intrinsic dielectric properties were determined by fitting the experimental data using a four-parameter semi-quantum model. The results demonstrate that the dielectric properties of Ca3(BO3)2 ceramics are primarily influenced by the external vibrational modes. The sample under 800 MPa exhibits optimal dielectric performance, with a dielectric constant (εr) of 5.95, a quality factor (Q × f) of 11,836 GHz, and a temperature coefficient of resonant frequency (τf) of −39.89 ppm/°C. A simulation of this Ca3(BO3)2 sample as a dielectric substrate was conducted using HFSS to fabricate a microstrip patch antenna operating at 14.97 GHz, which exhibits a return loss (S11) of −25.5 dB and a gain of 7.15 dBi.
Open AccessUltra-Low Dielectric Constant Ca3(BO3)2 Microwave Ceramics and Their Performance Simulation in 5G Microstrip Patch Antennas
Ca3(BO3)2 microwave dielectric ceramics with space group R-3c (#167) were prepared by cold sintering, and their properties were systematically investigated. Phonon density of state diagrams for the Ca3(BO3)2 lattice were obtained based on first-principles calculations to provide a more comprehensive understanding of the lattice vibrational properties of the material. Raman scattering and infrared reflectance spectroscopy were employed to investigate the lattice vibrational characteristics, identifying two types of vibrational modes: internal modes associated with the planar bending and symmetric stretching vibrations of the [BO3] group, and external modes linked to the vibrations of the [CaO6] octahedron. The intrinsic dielectric properties were determined by fitting the experimental data using a four-parameter semi-quantum model. The results demonstrate that the dielectric properties of Ca3(BO3)2 ceramics are primarily influenced by the external vibrational modes. The sample under 800 MPa exhibits optimal dielectric performance, with a dielectric constant (εr) of 5.95, a quality factor (Q × f) of 11,836 GHz, and a temperature coefficient of resonant frequency (τf) of −39.89 ppm/°C. A simulation of this Ca3(BO3)2 sample as a dielectric substrate was conducted using HFSS to fabricate a microstrip patch antenna operating at 14.97 GHz, which exhibits a return loss (S11) of −25.5 dB and a gain of 7.15 dBi.
- 11 June 2025
- Published by Elsevier in Optics Communications
- Vol. 591
Phonon polariton in thin β-Ga2O3 crystal
- 11 June 2025
- Published by Elsevier in Optics Communications
- Vol. 591
Phonon polariton in thin β-Ga2O3 crystal
- 1 April 2025
- Published by AIP Publishing in Applied Physics Letters
- Vol. 126 (14)
Interfacial second harmonic generation switching with multilayer InSe/VO2 heterostructure in telecom band
Interfacial second harmonic generation (SHG) switching mediated by insulator–metal phase transition of VO2 can serve as switchable and ultracompact nonlinear optical elements for on-chip logical optical operations. We propose that enhanced conversion efficiency and switching ratio of interfacial SHG in telecom band can be achieved with multilayer InSe/VO2 heterostructure, which has been comprehensively validated by a theoretical model of interfacial SHG and SHG spectra measurements. Our results provide solid guidance for designing interfacial SHG switching devices of high performance.
- 1 April 2025
- Published by AIP Publishing in Applied Physics Letters
- Vol. 126 (14)
Interfacial second harmonic generation switching with multilayer InSe/VO2 heterostructure in telecom band
Interfacial second harmonic generation (SHG) switching mediated by insulator–metal phase transition of VO2 can serve as switchable and ultracompact nonlinear optical elements for on-chip logical optical operations. We propose that enhanced conversion efficiency and switching ratio of interfacial SHG in telecom band can be achieved with multilayer InSe/VO2 heterostructure, which has been comprehensively validated by a theoretical model of interfacial SHG and SHG spectra measurements. Our results provide solid guidance for designing interfacial SHG switching devices of high performance.