Mengchuan Li
Mengchuan Li has a total of 13 co-authors. Here are the top co-authors by number of shared publications:
- Yunze He
Hunan University
2 shared publications - Guangxin Wang
College of Electrical and Information Engineering, Hunan University, Changsha, China
1 shared publication - Jie Zhang
College of Electrical and Information Engineering, Hunan University, Changsha, China
1 shared publication - Jun Wang
Hunan University
1 shared publication - Longhai Tang
College of Electrical and Information Engineering, Hunan University, Changsha, China
1 shared publication - Qiying Li
College of Electrical and Information Engineering, Hunan University, Changsha, China
1 shared publication
Latest Publications
- 16 October 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 73 (00189456) , 1-4
Mechanical Stress Wave Noncontact Laser Detection Method of Power Semiconductor Devices—Observation of Low-Frequency Signals
Power semiconductor device condition monitoring technology based on the mechanical stress wave (MSW) is an important means to study device failure mechanisms and evaluate device reliability. However, MSW signals have mainly been detected through acoustic emission sensors for contact detection. The operating temperature of the device will affect the detection results, and the presence of MSW low-frequency components may be overlooked due to limitations in sensor performance. This paper proposes an offline, non-contact MSW measurement method based on laser Doppler vibrometer for power semiconductor devices. This method obtained the complete MSW signal generated during the switching process of power semiconductor devices, especially the low-frequency components below 20 kHz. Moreover, the proposed method exhibits greater sensitivity in detecting the high-frequency components of the MSW compared to the contact detection. This study extends the detection methods and frequency ranges for the MSW in power semiconductor devices, thereby expecting to facilitate the generation and propagation mechanisms research of the MSW.
- 16 October 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. 73 (00189456) , 1-4
Mechanical Stress Wave Noncontact Laser Detection Method of Power Semiconductor Devices—Observation of Low-Frequency Signals
Power semiconductor device condition monitoring technology based on the mechanical stress wave (MSW) is an important means to study device failure mechanisms and evaluate device reliability. However, MSW signals have mainly been detected through acoustic emission sensors for contact detection. The operating temperature of the device will affect the detection results, and the presence of MSW low-frequency components may be overlooked due to limitations in sensor performance. This paper proposes an offline, non-contact MSW measurement method based on laser Doppler vibrometer for power semiconductor devices. This method obtained the complete MSW signal generated during the switching process of power semiconductor devices, especially the low-frequency components below 20 kHz. Moreover, the proposed method exhibits greater sensitivity in detecting the high-frequency components of the MSW compared to the contact detection. This study extends the detection methods and frequency ranges for the MSW in power semiconductor devices, thereby expecting to facilitate the generation and propagation mechanisms research of the MSW.
- 17 February 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Journal
- Vol. 20 (11) , 6064-6074
Acoustic Emission-Based Experimental Analysis of Mechanical Stress Wave in IGBT Device
In this paper, based on acoustic emission (AE) monitoring and digital filtering technology, the low and high frequency components in the switching mechanical stress wave (MSW) of insulated gate bipolar transistor (IGBT) device were discovered for the first time. Then, the effects of turn-off current on the low and high frequency components were studied. The obviously linear relationship was found between the low frequency component and the turn-off current, and the low frequency component could closely follow the change of turn-off current, showing that the low frequency component was strongly related with turn-off current. The high frequency component contained two pulse waves with the inverse phase, single frequency and high similarity, and it was weakly linear related with or not linear related the turn off current, and it was insensitive to the change of turn-off current, proving that the turn-off current was not the main cause of the high frequency component. Besides, the repeatability test was performed on another IGBT device, showing good repeatability for the experimental results.
- 17 February 2020
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Journal
- Vol. 20 (11) , 6064-6074
Acoustic Emission-Based Experimental Analysis of Mechanical Stress Wave in IGBT Device
In this paper, based on acoustic emission (AE) monitoring and digital filtering technology, the low and high frequency components in the switching mechanical stress wave (MSW) of insulated gate bipolar transistor (IGBT) device were discovered for the first time. Then, the effects of turn-off current on the low and high frequency components were studied. The obviously linear relationship was found between the low frequency component and the turn-off current, and the low frequency component could closely follow the change of turn-off current, showing that the low frequency component was strongly related with turn-off current. The high frequency component contained two pulse waves with the inverse phase, single frequency and high similarity, and it was weakly linear related with or not linear related the turn off current, and it was insensitive to the change of turn-off current, proving that the turn-off current was not the main cause of the high frequency component. Besides, the repeatability test was performed on another IGBT device, showing good repeatability for the experimental results.