Ruiying Zhang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Ruiying Zhang has a total of 59 co-authors. Here are the top co-authors by number of shared publications:
Bocang Qiu
Quanzhou University of Information Engineering
4 shared publicationsYanyan Wang
Chinese Academy of Sciences 1 Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics Suzhou, 215123, China
3 shared publicationsZhen Zhang
Chinese Academy of Sciences 1 Key lab of nanodevices and applications, Chinese Academy of Sciences, Division of nano-devices and related materials, Suzhou Institute of Nano-tech and Nano-bionics Suzhou, 215123, China
3 shared publications- Ben Zhang
School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
2 shared publications - Ben Zhang
Nano-Devices and Materials Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
2 shared publications Chanchan Luo
University of Science and Technology of China
2 shared publications
Latest Publications
- 1 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 44 (17) , 1-7
High-performance, ultra-broadband 100 GHz spacing quantum-well mode locked frequency comb
- 1 January 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 44 (17) , 1-7
High-performance, ultra-broadband 100 GHz spacing quantum-well mode locked frequency comb
- Open Access
Transmission Characteristics Analysis of a Twin-Waveguide Cavity
The transmission spectrum of a twin-waveguide cavity is systematically analyzed based on coupled mode theory, using the transfer matrix method (TMM). The results show that the traveling-wave transmission spectra of the twin-waveguide cavity is entirely determined by the coherent coupling effect involving the parameters of the effective refractive indices of the upper and lower waveguides, the coupling length Lc, and the ratio of the cavity length L to the coupling length (L/Lc). Filters with single, double, or triple-notch filtering could be obtained by choosing an appropriate L/Lc value. When the facet reflection is taken into consideration, the traveling-wave transmission spectrum is modified by the Fabry––Perot (FP) resonance, making it a standing-wave transmission spectrum. As a result, resonance splitting has been observed in the transmission spectrum of twin-waveguide resonators with high facet reflectivity. Further analysis shows that such an abnormal resonance phenomenon can be attributed to the destructive interference between the two FP resonance modes of the upper and lower waveguide through coherent coupling. In addition, narrow bandwidth amplification has also been observed through asymmetric facet reflections. Undoubtedly, all these unique spectral characteristics should be beneficial to the twin-waveguide cavity, achieving many more functions and being widely used in photonic integration circuits (PICs).
Open AccessTransmission Characteristics Analysis of a Twin-Waveguide Cavity
The transmission spectrum of a twin-waveguide cavity is systematically analyzed based on coupled mode theory, using the transfer matrix method (TMM). The results show that the traveling-wave transmission spectra of the twin-waveguide cavity is entirely determined by the coherent coupling effect involving the parameters of the effective refractive indices of the upper and lower waveguides, the coupling length Lc, and the ratio of the cavity length L to the coupling length (L/Lc). Filters with single, double, or triple-notch filtering could be obtained by choosing an appropriate L/Lc value. When the facet reflection is taken into consideration, the traveling-wave transmission spectrum is modified by the Fabry––Perot (FP) resonance, making it a standing-wave transmission spectrum. As a result, resonance splitting has been observed in the transmission spectrum of twin-waveguide resonators with high facet reflectivity. Further analysis shows that such an abnormal resonance phenomenon can be attributed to the destructive interference between the two FP resonance modes of the upper and lower waveguide through coherent coupling. In addition, narrow bandwidth amplification has also been observed through asymmetric facet reflections. Undoubtedly, all these unique spectral characteristics should be beneficial to the twin-waveguide cavity, achieving many more functions and being widely used in photonic integration circuits (PICs).
- 20 June 2024
- Published by Optica Publishing Group in Optics Express
- Vol. 32 (14) , 24358-24371
Theoretical analysis of passively mode-locked semiconductor ring lasers
In this paper, the theoretical analysis of the passive mode-locked semiconductor ring lasers (PML-SRLs) is investigated based on a travelling wave model. It is found that both the optical confinement factor and the injection current make great contributions to the operation regime and the performance of PML-SRLs. All operation regimes of PML-SRLs are governed by the transient gain-loss balance. Such balance is closely associated with the relationship among the stimulated rate in the semiconductor optical amplifier (SOA), the carrier lifetime in the saturated absorber (SA), and the roundtrip time of the ring resonator. Furthermore, our investigation indicates that the mode-locked state of such PML-SRLs is independent of the passive waveguide, but the performance degrades with the increased waveguide loss or the shortened waveguide length, once the material bandwidth is wide enough. Another discovery is that it is possible to achieve the high energy pulse in the PML-SRL with shortening the passive length and narrowing the gain spectrum meanwhile. Overall, such investigations should benefit designing the required PML-SRLs and achieving the high performance.
- 20 June 2024
- Published by Optica Publishing Group in Optics Express
- Vol. 32 (14) , 24358-24371
Theoretical analysis of passively mode-locked semiconductor ring lasers
In this paper, the theoretical analysis of the passive mode-locked semiconductor ring lasers (PML-SRLs) is investigated based on a travelling wave model. It is found that both the optical confinement factor and the injection current make great contributions to the operation regime and the performance of PML-SRLs. All operation regimes of PML-SRLs are governed by the transient gain-loss balance. Such balance is closely associated with the relationship among the stimulated rate in the semiconductor optical amplifier (SOA), the carrier lifetime in the saturated absorber (SA), and the roundtrip time of the ring resonator. Furthermore, our investigation indicates that the mode-locked state of such PML-SRLs is independent of the passive waveguide, but the performance degrades with the increased waveguide loss or the shortened waveguide length, once the material bandwidth is wide enough. Another discovery is that it is possible to achieve the high energy pulse in the PML-SRL with shortening the passive length and narrowing the gain spectrum meanwhile. Overall, such investigations should benefit designing the required PML-SRLs and achieving the high performance.
- Open Access
Simulation and Design of a PIC-Based Heterodyne Optical Phase Locked Loop
In this paper, we report on our simulation and design of a photonic integrated circuits (PIC)-based heterodyne optical phase-locked loop (OPLL). Our simulation reveals that the OPLL operation can be in one of three states, i.e., absolutely stable, metastable, and unstable states, depending on the relative position of the initial phase reversal point to the loop bandwidth. By systematically optimizing all of the loop parameters involved, the loop bandwidth of 247.8 MHz and the residual phase noise variance of 0.012 rad2 are theoretically obtained in such a PIC-OPLL system, which are better than any reported counterparts. In addition, the lowest required power of the master laser is also evaluated, assuming that the largest acceptable residual phase noise variance is 0.02 rad2, and it is found that the lowest master laser power is −54 dBm in our current OPLL system, and this value can be reduced to −56 dBm, providing that the summed linewidth is reduced to 10 kHz.
Open AccessSimulation and Design of a PIC-Based Heterodyne Optical Phase Locked Loop
In this paper, we report on our simulation and design of a photonic integrated circuits (PIC)-based heterodyne optical phase-locked loop (OPLL). Our simulation reveals that the OPLL operation can be in one of three states, i.e., absolutely stable, metastable, and unstable states, depending on the relative position of the initial phase reversal point to the loop bandwidth. By systematically optimizing all of the loop parameters involved, the loop bandwidth of 247.8 MHz and the residual phase noise variance of 0.012 rad2 are theoretically obtained in such a PIC-OPLL system, which are better than any reported counterparts. In addition, the lowest required power of the master laser is also evaluated, assuming that the largest acceptable residual phase noise variance is 0.02 rad2, and it is found that the lowest master laser power is −54 dBm in our current OPLL system, and this value can be reduced to −56 dBm, providing that the summed linewidth is reduced to 10 kHz.
- Open Access
- 18 March 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Journal
- Vol. 14 (2) , 1-8
Modulation Response of Monolithically Integrated External Optical Injection-Locking Semiconductor Ring Laser Based on PPR Effect
The modulation response of monolithically integrated external optical injection-locking (EOIL) semiconductor ring lasers based on photon-photon resonance effect was systematically analyzed. The simulation results show that the modulation response of the EOIL laser is strongly dependent on the internal loss of the ring laser. Assuming that the waveguide was loss-free, the modulation bandwidth of as high as 67.5 GHz was predicted. However, due to the excessive loss associated with the bending waveguide of the circular-shaped ring laser, the modulation performance of such EOIL laser has no any advantage over its free-running counterpart. Instead, use of rectangular-shaped ring laser as the slave laser is proposed to circumvent the issue associated with the excessive waveguide loss, since the internal loss, in this case, is only dependent on the reflectivity of the total reflection mirrors. Simulation shows the modulation bandwidth of at least 38 GHz is achievable in such EOIL laser, provided the reflectivity of the total reflection mirrors is greater than 96%. It is believed that this theoretical study will facilitate the future experimental demonstration of the monolithically integrated EOIL lasers.
- 18 March 2022
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Journal
- Vol. 14 (2) , 1-8
Open AccessModulation Response of Monolithically Integrated External Optical Injection-Locking Semiconductor Ring Laser Based on PPR Effect
The modulation response of monolithically integrated external optical injection-locking (EOIL) semiconductor ring lasers based on photon-photon resonance effect was systematically analyzed. The simulation results show that the modulation response of the EOIL laser is strongly dependent on the internal loss of the ring laser. Assuming that the waveguide was loss-free, the modulation bandwidth of as high as 67.5 GHz was predicted. However, due to the excessive loss associated with the bending waveguide of the circular-shaped ring laser, the modulation performance of such EOIL laser has no any advantage over its free-running counterpart. Instead, use of rectangular-shaped ring laser as the slave laser is proposed to circumvent the issue associated with the excessive waveguide loss, since the internal loss, in this case, is only dependent on the reflectivity of the total reflection mirrors. Simulation shows the modulation bandwidth of at least 38 GHz is achievable in such EOIL laser, provided the reflectivity of the total reflection mirrors is greater than 96%. It is believed that this theoretical study will facilitate the future experimental demonstration of the monolithically integrated EOIL lasers.
- Open Access
- 4 September 2018
- Published by Springer Nature in Discover Nano
- Vol. 13 (1) , 1-7
InAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application
In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high thermal stability of dλ/dT = 0.092 nm/K under continuous-wave (CW) operation, which is mainly attributed to the high material gain prepared by modulation p-doping and rapid thermal annealing (RTA) process, and the significantly reduced waveguide losses by shallow-etched gratings and its close proximity to the laser ridge feature in the LC-DFB laser. With this superior performance of the DFB laser, the wide tunable dual-wavelength lasing operation has been obtained by delicately defining different periods for the grating structures on the two sides of the laser ridge or combining the reduced laser cavity length. The wavelength spacing between the two lasing modes can be flexibly tuned in a very wide range from 0.5 to 73.4 nm, corresponding to the frequency difference from 0.10 to 14 THz, which is the largest tuning range by the utilization of single device and hence providing a new opportunity towards the generation of CW THz radiation.
- 4 September 2018
- Published by Springer Nature in Discover Nano
- Vol. 13 (1) , 1-7
Open AccessInAs/GaAs Quantum Dot Dual-Mode Distributed Feedback Laser Towards Large Tuning Range Continuous-Wave Terahertz Application
In this paper, a laterally coupled distributed feedback (LC-DFB) laser based on modulation p-doped multiple InAs/GaAs quantum dot (QD) structures has been fabricated. The device exhibits a high side-mode suppression ratio (SMSR) of > 47 dB and a high thermal stability of dλ/dT = 0.092 nm/K under continuous-wave (CW) operation, which is mainly attributed to the high material gain prepared by modulation p-doping and rapid thermal annealing (RTA) process, and the significantly reduced waveguide losses by shallow-etched gratings and its close proximity to the laser ridge feature in the LC-DFB laser. With this superior performance of the DFB laser, the wide tunable dual-wavelength lasing operation has been obtained by delicately defining different periods for the grating structures on the two sides of the laser ridge or combining the reduced laser cavity length. The wavelength spacing between the two lasing modes can be flexibly tuned in a very wide range from 0.5 to 73.4 nm, corresponding to the frequency difference from 0.10 to 14 THz, which is the largest tuning range by the utilization of single device and hence providing a new opportunity towards the generation of CW THz radiation.
- Open Access
- 1 December 2015
- Published by AIP Publishing in AIP Advances
- Vol. 5 (12) , 127209
Fabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells
We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.
- 1 December 2015
- Published by AIP Publishing in AIP Advances
- Vol. 5 (12) , 127209
Open AccessFabrication and characterization of Al2O3 /Si composite nanodome structures for high efficiency crystalline Si thin film solar cells
We report on our fabrication and characterization of Al2O3/Si composite nanodome (CND) structures, which is composed of Si nanodome structures with a conformal cladding Al2O3 layer to evaluate its optical and electrical performance when it is applied to thin film solar cells. It has been observed that by application of Al2O3thin film coating using atomic layer deposition (ALD) to the Si nanodome structures, both optical and electrical performances are greatly improved. The reflectivity of less than 3% over the wavelength range of from 200 nm to 2000 nm at an incident angle from 0° to 45° is achieved when the Al2O3 film is 90 nm thick. The ultimate efficiency of around 27% is obtained on the CND textured 2 μm-thick Si solar cells, which is compared to the efficiency of around 25.75% and 15% for the 2 μm-thick Si nanodome surface-decorated and planar samples respectively. Electrical characterization was made by using CND-decorated MOS devices to measure device’s leakage current and capacitance dispersion. It is found the electrical performance is sensitive to the thickness of the Al2O3 film, and the performance is remarkably improved when the dielectric layer thickness is 90 nm thick. The leakage current, which is less than 4x10−9 A/cm2 over voltage range of from -3 V to 3 V, is reduced by several orders of magnitude. C-V measurements also shows as small as 0.3% of variation in the capacitance over the frequency range from 10 kHz to 500 kHz, which is a strong indication of surface states being fully passivated. TEM examination of CND-decorated samples also reveals the occurrence of SiOx layer formed between the interface of Si and the Al2O3 film, which is thin enough that ensures the presence of field-effect passivation, From our theoretical and experimental study, we believe Al2O3 coated CND structures is a truly viable approach to achieving higher device efficiency.
- 7 January 2015
- Published by Elsevier in Optics Communications
- Vol. 343, 178-182
Efficiency improvement of flexible a-SiGe:H solar cells decorated by SiNx composite nanostructures
- 7 January 2015
- Published by Elsevier in Optics Communications
- Vol. 343, 178-182
Efficiency improvement of flexible a-SiGe:H solar cells decorated by SiNx composite nanostructures
- 6 December 2013
- Published by Elsevier in Optics Communications
- Vol. 316, 37-41
Broadband and omnidirectional antireflection of Si nanocone structures cladded by SiN film for Si thin film solar cells
- 6 December 2013
- Published by Elsevier in Optics Communications
- Vol. 316, 37-41
Broadband and omnidirectional antireflection of Si nanocone structures cladded by SiN film for Si thin film solar cells
- 1 January 2013
- Published by Optica Publishing Group
- p. AW3B.5
Single Ring Tunable Laser Based on Two-section Active Vertical Coupler
Flexible coupled single ring tunable laser is demonstrated. The threshold current, free spectrum range and lasing wavelength are tuned with the coupling current. Their tuning mechanism is further verified by the extracted modulated gain spectrum.
- 1 January 2013
- Published by Optica Publishing Group
- p. AW3B.5
Single Ring Tunable Laser Based on Two-section Active Vertical Coupler
Flexible coupled single ring tunable laser is demonstrated. The threshold current, free spectrum range and lasing wavelength are tuned with the coupling current. Their tuning mechanism is further verified by the extracted modulated gain spectrum.