Feng Li
Research Subjects
Research Interests
Feng Li has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- Benjamin Scott Flavel
Karlsruhe Institute of Technology
1 shared publication - Biao Sun
723 Research Institute of CSIC,Yangzhou,Jiangsu,China,225000
1 shared publication - Han Li
University of Turku
1 shared publication - Jianhui Chen
Province‐Ministry Co‐Construction Collaborative Innovation Center of Hebei Photovoltaic Technology College of Physics Science and Technology Hebei University Baoding China
1 shared publication - Jikui Ma
Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
1 shared publication - Jun Yan
Hebei Key Lab of Optic‐Electronic Information and Materials College of Physics Science and Technology Hebei University Baoding 071002 P. R. China
1 shared publication
Latest Publications
- Open Access
- 12 July 2020
- Published by Wiley in Advanced Functional Materials
- Vol. 30 (38)
A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency
Traditional silicon solar cells extract holes and achieve interface passivation with the use of a boron dopant and dielectric thin films such as silicon oxide or hydrogenated amorphous silicon. Without these two key components, few technologies have realized power conversion efficiencies above 20%. Here, a carbon nanotube ink is spin coated directly onto a silicon wafer to serve simultaneously as a hole extraction layer, but also to passivate interfacial defects. This enables a low‐cost fabrication process that is absent of vacuum equipment and high‐temperatures. Power conversion efficiencies of 21.4% on an device area of 4.8 cm2 and 20% on an industrial size (245.71 cm2) wafer are obtained. Additionally, the high quality of this passivated carrier selective contact affords a fill factor of 82%, which is a record for silicon solar cells with dopant‐free contacts. The combination of low‐dimensional materials with an organic passivation is a new strategy to high performance photovoltaics.
- 12 July 2020
- Published by Wiley in Advanced Functional Materials
- Vol. 30 (38)
Open AccessA Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency
Traditional silicon solar cells extract holes and achieve interface passivation with the use of a boron dopant and dielectric thin films such as silicon oxide or hydrogenated amorphous silicon. Without these two key components, few technologies have realized power conversion efficiencies above 20%. Here, a carbon nanotube ink is spin coated directly onto a silicon wafer to serve simultaneously as a hole extraction layer, but also to passivate interfacial defects. This enables a low‐cost fabrication process that is absent of vacuum equipment and high‐temperatures. Power conversion efficiencies of 21.4% on an device area of 4.8 cm2 and 20% on an industrial size (245.71 cm2) wafer are obtained. Additionally, the high quality of this passivated carrier selective contact affords a fill factor of 82%, which is a record for silicon solar cells with dopant‐free contacts. The combination of low‐dimensional materials with an organic passivation is a new strategy to high performance photovoltaics.