Łucja Kipczak
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Łucja Kipczak has a total of 105 co-authors. Here are the top co-authors by number of shared publications:
- Maciej Roman Molas
University of Warsaw
19 shared publications - Adam Babinski
University of Warsaw
14 shared publications - Magdalena Grzeszczyk
Institute for Functional Intelligent Materials National University of Singapore Singapore 117544 Singapore
9 shared publications - Katarzyna Olkowska-Pucko
University of Warsaw
7 shared publications - Kenji Watanabe
National Institute for Materials Science
6 shared publications Takashi Taniguchi
Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
6 shared publications
Latest Publications
- Open Access
- 1 October 2026
- Published by Springer Nature in Communications Physics
Strong spin-lattice interaction in layered antiferromagnetic CrCl3
- 1 October 2026
- Published by Springer Nature in Communications Physics
Open AccessStrong spin-lattice interaction in layered antiferromagnetic CrCl3
- Open Access
- 9 April 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 139 (14)
Erratum: “The optical signature of few-layer ReSe2” [J. Appl. Phys. 128 , 044302 (2020)]
The authors initiate the correction to the original publication.1
- 9 April 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 139 (14)
Open AccessErratum: “The optical signature of few-layer ReSe2” [J. Appl. Phys. 128 , 044302 (2020)]
The authors initiate the correction to the original publication.1
- Open Access
- 17 February 2026
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 136 (7) , 076901
Extremely High Excitonic g Factors in 2D Crystals by Alloy-Induced Admixing of Band States
Monolayers (MLs) of semiconducting transition metal dichalcogenides emit light very efficiently and display rich spin-valley physics, with gyromagnetic ( g ) factors of about − 4 . Here, we investigate how these properties can be tailored by alloying. Magneto-optical spectroscopy is used to reveal the peculiar properties of excitonic complexes in Mo x W 1 − x Se 2 MLs with different metal concentrations. We show that the alloys feature extremely high g factors for neutral excitons, that change gradually with the composition up to reaching values of the order of − 10 for x ≈ 0.2 . First-principles calculations quantitatively identify the alloy-induced mixing between different conduction band valleys as the underlying mechanism originating the anomalous composition dependence of the neutral exciton g factor. The theoretical framework also suggests a high strain sensitivity of the alloys, making them promising candidates for tailor-made optoelectronic devices.
- 17 February 2026
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 136 (7) , 076901
Open AccessExtremely High Excitonic g Factors in 2D Crystals by Alloy-Induced Admixing of Band States
Monolayers (MLs) of semiconducting transition metal dichalcogenides emit light very efficiently and display rich spin-valley physics, with gyromagnetic ( g ) factors of about − 4 . Here, we investigate how these properties can be tailored by alloying. Magneto-optical spectroscopy is used to reveal the peculiar properties of excitonic complexes in Mo x W 1 − x Se 2 MLs with different metal concentrations. We show that the alloys feature extremely high g factors for neutral excitons, that change gradually with the composition up to reaching values of the order of − 10 for x ≈ 0.2 . First-principles calculations quantitatively identify the alloy-induced mixing between different conduction band valleys as the underlying mechanism originating the anomalous composition dependence of the neutral exciton g factor. The theoretical framework also suggests a high strain sensitivity of the alloys, making them promising candidates for tailor-made optoelectronic devices.
- Open Access
- 7 January 2026
- Published by IOP Publishing in 2D Materials
- Vol. 13 (1)
Magneto-Excitonic Duality From Monolayer to Trilayer CrSBr
Two-dimensional (2D) layered magnetic materials (LMMs) are a newly emerging class of van der Waals materials, opening new opportunities to study magneto-excitonic coupling. The air-stable, structurally and optically anisotropic A-type antiferromagnetic chromium sulfur bromide (CrSBr) is one of the most prominent examples of such LMMs. We investigate photoluminescence (PL) and PL excitation of mono-to tri-layers CrSBr and find that it exhibits a unique duplexity, supporting both Frenkel-and Wannier-Mott-like excitons. Our magneto-optical experiments reveal a similar excitonic response from the mono-and trilayer systems and a completely different signature in the bilayer flake. This shows a different origin of the low-lying excitonic species (A, A' and B) in the band structure. We confirm the robustness of the magneto-excitonic coupling in few-layer CrSBr. Our work enables a more comprehensive exploration of the dual excitonic behavior in 2D materials.
- 7 January 2026
- Published by IOP Publishing in 2D Materials
- Vol. 13 (1)
Open AccessMagneto-Excitonic Duality From Monolayer to Trilayer CrSBr
Two-dimensional (2D) layered magnetic materials (LMMs) are a newly emerging class of van der Waals materials, opening new opportunities to study magneto-excitonic coupling. The air-stable, structurally and optically anisotropic A-type antiferromagnetic chromium sulfur bromide (CrSBr) is one of the most prominent examples of such LMMs. We investigate photoluminescence (PL) and PL excitation of mono-to tri-layers CrSBr and find that it exhibits a unique duplexity, supporting both Frenkel-and Wannier-Mott-like excitons. Our magneto-optical experiments reveal a similar excitonic response from the mono-and trilayer systems and a completely different signature in the bilayer flake. This shows a different origin of the low-lying excitonic species (A, A' and B) in the band structure. We confirm the robustness of the magneto-excitonic coupling in few-layer CrSBr. Our work enables a more comprehensive exploration of the dual excitonic behavior in 2D materials.
- Open Access
- 1 August 2025
- Published by Royal Society of Chemistry (RSC) in Nanoscale Horizons
- Vol. 10 (10) , 2465-2474
Interplay between charge transfer and magnetic proximity effects in WSe2/CrCl3 heterostructures
Magnetic proximity effect observed on the WSe2/CrCl3 heterostructure as the brightening of the dark exciton from WSe2 ML without external magnetic field is applied.
- 1 August 2025
- Published by Royal Society of Chemistry (RSC) in Nanoscale Horizons
- Vol. 10 (10) , 2465-2474
Open AccessInterplay between charge transfer and magnetic proximity effects in WSe2/CrCl3 heterostructures
Magnetic proximity effect observed on the WSe2/CrCl3 heterostructure as the brightening of the dark exciton from WSe2 ML without external magnetic field is applied.
- Open Access
- 18 November 2024
- Published by Wiley in Nanophotonics
- Vol. 13 (26) , 4743-4749
Impact of temperature on the brightening of neutral and charged dark excitons in WSe 2 monolayer
Optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in‐plane‐field activation of the neutral and charged dark excitons is investigated in a WSe 2 ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark ( X D ) and grey ( X G ) excitons and the negative dark trion ( T D ) differ substantially at particular temperature. More importantly, they weaken considerably by about 3–4 orders of magnitude with temperature increased from 4.2 K to 100 K. The quenching of the dark‐related emissions is accompanied by the two‐order‐of‐magnitude increase in the emissions of their neutral bright counterparts, i . e . neutral bright exciton ( X B ) and spin‐singlet ( T S ) and spin‐triplet ( T T ) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X D and T D complexes and the corresponding bright X B , T S , and T T ones vary with temperature rises from 4.2 K to 100 K. This is explained in terms of the different exciton–phonon coupling for the bright and dark excitons stemming from their distinct symmetry properties.
- 18 November 2024
- Published by Wiley in Nanophotonics
- Vol. 13 (26) , 4743-4749
Open AccessImpact of temperature on the brightening of neutral and charged dark excitons in WSe 2 monolayer
Optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in‐plane‐field activation of the neutral and charged dark excitons is investigated in a WSe 2 ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark ( X D ) and grey ( X G ) excitons and the negative dark trion ( T D ) differ substantially at particular temperature. More importantly, they weaken considerably by about 3–4 orders of magnitude with temperature increased from 4.2 K to 100 K. The quenching of the dark‐related emissions is accompanied by the two‐order‐of‐magnitude increase in the emissions of their neutral bright counterparts, i . e . neutral bright exciton ( X B ) and spin‐singlet ( T S ) and spin‐triplet ( T T ) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X D and T D complexes and the corresponding bright X B , T S , and T T ones vary with temperature rises from 4.2 K to 100 K. This is explained in terms of the different exciton–phonon coupling for the bright and dark excitons stemming from their distinct symmetry properties.
- 30 September 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 125 (14)
Electronic structure investigation and anisotropic phonon anharmonicity in ternary ZrGeTe4 single crystals
Ternary two-dimensional (2D) transition metal chalcogenides have gained immense attention because of their ability to overcome the intrinsic limitations of their binary counterparts. Layered 2D materials are important for future electronic and photonic devices owing to their low structural symmetry and in-plane anisotropy with tunable bandgap. Herein, the electronic structure and detailed vibrational properties of bulk ZrGeTe4 layered single crystals were investigated using angle-resolved photoemission spectroscopy (ARPES) and Raman scattering (RS). The ARPES results revealed an anisotropic Fermi surface of different momentum along kx and ky from the zone center and an anisotropic band structure with varying band curvatures along the high-symmetry directions. Furthermore, the RS of ZrGeTe4 was investigated under different polarizations and varying temperatures. The polarized RS exhibited twofold and fourfold symmetry orientations in different configurations, revealing the anisotropic phonon dispersions for bulk ZrGeTe4. The observed softening of Raman modes was corroborated with the anharmonic phonon dispersion, which was further supported by our third-order force constant calculations of thermal transport using density functional theory. Low lattice thermal conductivity with increasing temperature is linked with enhanced phonon–phonon scattering, which is evident from the decreased phonon lifetime and peak linewidth. In addition to these fundamental aspects, the anisotropic nature and unique layered structure of such materials reveal their bright future for next-generation nanoelectronic applications.
- 30 September 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 125 (14)
Electronic structure investigation and anisotropic phonon anharmonicity in ternary ZrGeTe4 single crystals
Ternary two-dimensional (2D) transition metal chalcogenides have gained immense attention because of their ability to overcome the intrinsic limitations of their binary counterparts. Layered 2D materials are important for future electronic and photonic devices owing to their low structural symmetry and in-plane anisotropy with tunable bandgap. Herein, the electronic structure and detailed vibrational properties of bulk ZrGeTe4 layered single crystals were investigated using angle-resolved photoemission spectroscopy (ARPES) and Raman scattering (RS). The ARPES results revealed an anisotropic Fermi surface of different momentum along kx and ky from the zone center and an anisotropic band structure with varying band curvatures along the high-symmetry directions. Furthermore, the RS of ZrGeTe4 was investigated under different polarizations and varying temperatures. The polarized RS exhibited twofold and fourfold symmetry orientations in different configurations, revealing the anisotropic phonon dispersions for bulk ZrGeTe4. The observed softening of Raman modes was corroborated with the anharmonic phonon dispersion, which was further supported by our third-order force constant calculations of thermal transport using density functional theory. Low lattice thermal conductivity with increasing temperature is linked with enhanced phonon–phonon scattering, which is evident from the decreased phonon lifetime and peak linewidth. In addition to these fundamental aspects, the anisotropic nature and unique layered structure of such materials reveal their bright future for next-generation nanoelectronic applications.
- Open Access
The temperature influence on the brightening of neutral and charged dark excitons in WSe$_2$ monolayer
The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) excitons and the negative dark trion (T$^D$) differ substantially at a particular temperature. More importantly, they vanish considerably by about 3 -- 4 orders of magnitude with the temperature increased from 4.2 K to 100 K. The quenching of the dark-related emissions is accompanied by the two-order-of-magnitude increase in the emissions of their neutral bright counterparts, $i.e.$ neutral bright exciton (X$^B$) and spin-singlet (T$^S$) and spin-triplet (T$^T$) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X$^D$ and T$^D$ complexes and the corresponding bright X$^B$, T$^S$, and T$^T$ ones vary with temperature rises from 4.2 K to 100 K. This can be explained in terms of the different exciton-phonon couplings for the bright and dark excitons stemming from their distinct symmetry properties.Open AccessThe temperature influence on the brightening of neutral and charged dark excitons in WSe$_2$ monolayer
The optically dark states play an important role in the electronic and optical properties of monolayers (MLs) of semiconducting transition metal dichalcogenides. The effect of temperature on the in-plane-field activation of the neutral and charged dark excitons is investigated in a WSe$_2$ ML encapsulated in hexagonal BN flakes. The brightening rates of the neutral dark (X$^D$) and grey (X$^G$) excitons and the negative dark trion (T$^D$) differ substantially at a particular temperature. More importantly, they vanish considerably by about 3 -- 4 orders of magnitude with the temperature increased from 4.2 K to 100 K. The quenching of the dark-related emissions is accompanied by the two-order-of-magnitude increase in the emissions of their neutral bright counterparts, $i.e.$ neutral bright exciton (X$^B$) and spin-singlet (T$^S$) and spin-triplet (T$^T$) negative trions, due to the thermal activations of dark states. Furthermore, the energy splittings between the dark X$^D$ and T$^D$ complexes and the corresponding bright X$^B$, T$^S$, and T$^T$ ones vary with temperature rises from 4.2 K to 100 K. This can be explained in terms of the different exciton-phonon couplings for the bright and dark excitons stemming from their distinct symmetry properties. - Open Access
- 29 March 2024
- Published by Springer Nature in Scientific Reports
- Vol. 14 (1) , 1-10
Resonant Raman scattering of few layers CrBr3
We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr3) with a thickness ranging from three to twenty layers (3–20 L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV. Our characterization demonstrates that for 12 L CrBr3, 3.06 eV excitation could be considered resonant with interband electronic transitions due to the enhanced intensity of the Raman-active scattering resonances and the qualitative change in the Raman spectra. Polarization-resolved RS measurements for 12 L CrBr3 and first-principles calculations allow us to identify five observable phonon modes characterized by distinct symmetries, classified as the A $$_\text {g}$$ and E $$_\text {g}$$ modes. The evolution of phonon modes with temperature for a 16 L CrBr3 encapsulated in hexagonal boron nitride flakes demonstrates alterations of phonon energies and/or linewidths of resonances indicative of a transition between the paramagnetic and ferromagnetic state at Curie temperature ( $$T_\text {C} \approx 50$$ K). The exploration of the effects of thickness on the phonon energies demonstrated small variations pronounces exclusively for the thinnest layers in the vicinity of 3–5 L. We propose that this observation can be due to the strong localization in the real space of interband electronic excitations, limiting the effects of confinement for resonantly excited Raman modes to atomically thin layers.- 29 March 2024
- Published by Springer Nature in Scientific Reports
- Vol. 14 (1) , 1-10
Open AccessResonant Raman scattering of few layers CrBr3
We investigate the vibrational and magnetic properties of thin layers of chromium tribromide (CrBr3) with a thickness ranging from three to twenty layers (3–20 L) revealed by the Raman scattering (RS) technique. Systematic dependence of the RS process efficiency on the energy of the laser excitation is explored for four different excitation energies: 1.96 eV, 2.21 eV, 2.41 eV, and 3.06 eV. Our characterization demonstrates that for 12 L CrBr3, 3.06 eV excitation could be considered resonant with interband electronic transitions due to the enhanced intensity of the Raman-active scattering resonances and the qualitative change in the Raman spectra. Polarization-resolved RS measurements for 12 L CrBr3 and first-principles calculations allow us to identify five observable phonon modes characterized by distinct symmetries, classified as the A $$_\text {g}$$ and E $$_\text {g}$$ modes. The evolution of phonon modes with temperature for a 16 L CrBr3 encapsulated in hexagonal boron nitride flakes demonstrates alterations of phonon energies and/or linewidths of resonances indicative of a transition between the paramagnetic and ferromagnetic state at Curie temperature ( $$T_\text {C} \approx 50$$ K). The exploration of the effects of thickness on the phonon energies demonstrated small variations pronounces exclusively for the thinnest layers in the vicinity of 3–5 L. We propose that this observation can be due to the strong localization in the real space of interband electronic excitations, limiting the effects of confinement for resonantly excited Raman modes to atomically thin layers. - Open Access
- 5 February 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-11
Localisation-to-delocalisation transition of moiré excitons in WSe2/MoSe2 heterostructures
Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, e.g., for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of WSe2/MoSe2 HSs from T = 6 K to room temperature using time-resolved and continuous-wave micro-photoluminescence also under a magnetic field. The exciton dynamics and emission lineshape evolution with temperature show clear signatures that MXs de-trap from the moiré potential and turn into free interlayer excitons (IXs) for temperatures above 100 K. The MX-to-IX transition is also apparent from the exciton magnetic moment reversing its sign when the moiré potential is not capable of localising excitons at elevated temperatures. Concomitantly, the exciton formation and decay times reduce drastically. Thus, our findings establish the conditions for a truly confined nature of the exciton states in a moiré superlattice with increasing temperature and photo-generated carrier density.
- 5 February 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-11
Open AccessLocalisation-to-delocalisation transition of moiré excitons in WSe2/MoSe2 heterostructures
Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, e.g., for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of WSe2/MoSe2 HSs from T = 6 K to room temperature using time-resolved and continuous-wave micro-photoluminescence also under a magnetic field. The exciton dynamics and emission lineshape evolution with temperature show clear signatures that MXs de-trap from the moiré potential and turn into free interlayer excitons (IXs) for temperatures above 100 K. The MX-to-IX transition is also apparent from the exciton magnetic moment reversing its sign when the moiré potential is not capable of localising excitons at elevated temperatures. Concomitantly, the exciton formation and decay times reduce drastically. Thus, our findings establish the conditions for a truly confined nature of the exciton states in a moiré superlattice with increasing temperature and photo-generated carrier density.