Andreas K. Schmid
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Andreas K. Schmid has a total of 97 co-authors. Here are the top co-authors by number of shared publications:
- Colin Ophus
Stanford University
7 shared publications - Kai Liu
Georgetown University
7 shared publications - Gong Chen
National Laboratory of Solid State Microstructures
6 shared publications - Changyeon Won
Department of Physics, Kyung Hee University, Seoul, South Korea
5 shared publications - Hai Feng Ding
National Laboratory of Solid State Microstructures
5 shared publications - Alexander Stibor
Institute of Physics and LISA + University of Tübingen Tübingen Germany
3 shared publications
Latest Publications
- 18 September 2025
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 9 (9)
Stabilization of magnetic bubbles in multilayers on an oxygen-reconstructed Nb(110) surface via an ultra-thin Cu interlayer- 18 September 2025
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 9 (9)
Stabilization of magnetic bubbles in multilayers on an oxygen-reconstructed Nb(110) surface via an ultra-thin Cu interlayer- Open Access
- 11 April 2025
- Published by Springer Nature in Nature Communications
- Vol. 16 (1) , 1-10
Magnetic skyrmionic structures with variable topological charges in engineered Dzyaloshinskii-Moriya interaction systems
Magnetic skyrmionic structures, including magnetic skyrmions and antiskyrmions, are characterized by swirling spin textures with non-trivial topologies. They are featured with specific topological charges, Q, which are of crucial importance in determining their topological properties. Owing to the invariance of the chiral nature, it is generally believed that Q is conserved in a given magnetic skyrmionic structure and is hard to alter. Here, we experimentally realize the control of Q of magnetic skyrmionic structures at room temperature in a Dzyaloshinskii-Moriya interaction (DMI) platform with spatially alternating signs. Depending on how many times it crosses the interfaces between DMI regions with opposite signs, the magnetic skyrmionic structures possess different Q. Modifying the DMI energy landscape through chemisorbed oxygen, a magnetic topological transition is realized. This creation and manipulation of magnetic skyrmionic structures with controllable Q, in particular the DMI-stabilized thin-film antiskyrmions and high-Q skyrmionic structures, enables a new degree of freedom to control their dynamics via a novel DMI confinement effect. Our findings open up an unexplored avenue on various topological magnetic skyrmionic structures and their potential applications.
- 11 April 2025
- Published by Springer Nature in Nature Communications
- Vol. 16 (1) , 1-10
Open AccessMagnetic skyrmionic structures with variable topological charges in engineered Dzyaloshinskii-Moriya interaction systems
Magnetic skyrmionic structures, including magnetic skyrmions and antiskyrmions, are characterized by swirling spin textures with non-trivial topologies. They are featured with specific topological charges, Q, which are of crucial importance in determining their topological properties. Owing to the invariance of the chiral nature, it is generally believed that Q is conserved in a given magnetic skyrmionic structure and is hard to alter. Here, we experimentally realize the control of Q of magnetic skyrmionic structures at room temperature in a Dzyaloshinskii-Moriya interaction (DMI) platform with spatially alternating signs. Depending on how many times it crosses the interfaces between DMI regions with opposite signs, the magnetic skyrmionic structures possess different Q. Modifying the DMI energy landscape through chemisorbed oxygen, a magnetic topological transition is realized. This creation and manipulation of magnetic skyrmionic structures with controllable Q, in particular the DMI-stabilized thin-film antiskyrmions and high-Q skyrmionic structures, enables a new degree of freedom to control their dynamics via a novel DMI confinement effect. Our findings open up an unexplored avenue on various topological magnetic skyrmionic structures and their potential applications.
- Open Access
- 25 November 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-9
Reducing crystal symmetry to generate out-of-plane Dzyaloshinskii–Moriya interaction
The Dzyaloshinskii-Moriya antisymmetric exchange interaction (DMI) stabilises topological spin textures with promising future spintronics applications. According to crystal symmetry, the DMI can be categorized as four different types that favour different chiral textures. Unlike the other three extensively-investigated types, out-of-plane DMI, as the last type that favours in-plane chirality, remained missing so far. Here we apply point-group-dependent DMI matrix analysis to show that out-of-plane DMI exists under reduced crystal symmetry. Through strain and structure engineering, we show how Cs symmetry is realized in ultrathin magnets and observe the out-of-plane DMI stabilised in-plane chirality using spin-polarized electron microscopy. Our results show that extremely low out-of-plane DMI strengths at µeV/atom are sufficient to stabilise topological spin textures, including merons and bimerons. We also demonstrate field-induced reversible control of the in-plane chirality and merons. Our findings open up untapped paths on topological magnetic textures and their potential applications.
- 25 November 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-9
Open AccessReducing crystal symmetry to generate out-of-plane Dzyaloshinskii–Moriya interaction
The Dzyaloshinskii-Moriya antisymmetric exchange interaction (DMI) stabilises topological spin textures with promising future spintronics applications. According to crystal symmetry, the DMI can be categorized as four different types that favour different chiral textures. Unlike the other three extensively-investigated types, out-of-plane DMI, as the last type that favours in-plane chirality, remained missing so far. Here we apply point-group-dependent DMI matrix analysis to show that out-of-plane DMI exists under reduced crystal symmetry. Through strain and structure engineering, we show how Cs symmetry is realized in ultrathin magnets and observe the out-of-plane DMI stabilised in-plane chirality using spin-polarized electron microscopy. Our results show that extremely low out-of-plane DMI strengths at µeV/atom are sufficient to stabilise topological spin textures, including merons and bimerons. We also demonstrate field-induced reversible control of the in-plane chirality and merons. Our findings open up untapped paths on topological magnetic textures and their potential applications.
- 26 December 2023
- Published by American Physical Society (APS) in Physical Review Applied
- Vol. 20 (6) , 064045
Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy
We report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top - layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker - filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.- 26 December 2023
- Published by American Physical Society (APS) in Physical Review Applied
- Vol. 20 (6) , 064045
Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy
We report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top - layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker - filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.- Open Access
- 28 August 2023
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 23 (17) , 8000-8005
Direct Visualization of the Charge Transfer in a Graphene/α-RuCl3 Heterostructure via Angle-Resolved Photoemission Spectroscopy
We investigate the electronic properties of a graphene and α-ruthenium trichloride (α-RuCl3) heterostructure using a combination of experimental techniques. α-RuCl3 is a Mott insulator and a Kitaev material. Its combination with graphene has gained increasing attention due to its potential applicability in novel optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy and low-energy electron microscopy, we are able to provide a direct visualization of the massive charge transfer from graphene to α-RuCl3, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. A measurement of the spatially resolved work function allows for a direct estimate of the interface dipole between graphene and α-RuCl3. Their strong coupling could lead to new ways of manipulating electronic properties of a two-dimensional heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power optoelectronics devices.
- 28 August 2023
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 23 (17) , 8000-8005
Open AccessDirect Visualization of the Charge Transfer in a Graphene/α-RuCl3 Heterostructure via Angle-Resolved Photoemission Spectroscopy
We investigate the electronic properties of a graphene and α-ruthenium trichloride (α-RuCl3) heterostructure using a combination of experimental techniques. α-RuCl3 is a Mott insulator and a Kitaev material. Its combination with graphene has gained increasing attention due to its potential applicability in novel optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy and low-energy electron microscopy, we are able to provide a direct visualization of the massive charge transfer from graphene to α-RuCl3, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. A measurement of the spatially resolved work function allows for a direct estimate of the interface dipole between graphene and α-RuCl3. Their strong coupling could lead to new ways of manipulating electronic properties of a two-dimensional heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power optoelectronics devices.
- Open Access
- 17 July 2023
- Published by AIP Publishing in Applied Physics Letters
- Vol. 123 (3)
Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)
We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.
- 17 July 2023
- Published by AIP Publishing in Applied Physics Letters
- Vol. 123 (3)
Open AccessSteady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)
We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.
- Open Access
- 19 April 2023
- Published by American Physical Society (APS) in Physical Review B
- Vol. 107 (14) , L140407
and domain walls in epitaxial (111)/Co multiferroic heterostructuresWe report on domain pattern transfer from a ferroelectric substrate with a (111) orientation of the surface to an epitaxial Co film grown on a Pd buffer layer. Spatially modulated interfacial strain transfer from ferroelectric/ferroelastic domains and inverse magnetostriction in the ferromagnetic film induce stripe regions with a modulation of the in-plane uniaxial magnetic anisotropy direction. Using spin-polarized low-energy electron microscopy, we observe the formation of two distinct anisotropy configurations between stripe regions, leading to angles of or between the magnetizations of adjacent domains. Moreover, through application of a magnetic field parallel or perpendicular to these stripes, head-to-head or head-to-tail magnetization configurations are initialized. This results in four distinct magnetic domain-wall types associated with different energies and domain widths, which, in turn, affects whether domain pattern transfer can be achieved.- 19 April 2023
- Published by American Physical Society (APS) in Physical Review B
- Vol. 107 (14) , L140407
Open Accessand domain walls in epitaxial (111)/Co multiferroic heterostructuresWe report on domain pattern transfer from a ferroelectric substrate with a (111) orientation of the surface to an epitaxial Co film grown on a Pd buffer layer. Spatially modulated interfacial strain transfer from ferroelectric/ferroelastic domains and inverse magnetostriction in the ferromagnetic film induce stripe regions with a modulation of the in-plane uniaxial magnetic anisotropy direction. Using spin-polarized low-energy electron microscopy, we observe the formation of two distinct anisotropy configurations between stripe regions, leading to angles of or between the magnetizations of adjacent domains. Moreover, through application of a magnetic field parallel or perpendicular to these stripes, head-to-head or head-to-tail magnetization configurations are initialized. This results in four distinct magnetic domain-wall types associated with different energies and domain widths, which, in turn, affects whether domain pattern transfer can be achieved. - 10 March 2023
- Published by American Physical Society (APS) in Physical Review Applied
- Vol. 19 (3) , 034036
Electron-Beam Source with a Superconducting Niobium Tip
Modern electron microscopy and spectroscopy are key technologies for studying the structure and composition of quantum and biological materials in fundamental and applied sciences. High-resolution spectroscopic techniques and aberration-corrected microscopes are often limited by the relatively large energy distribution of currently available beam sources. This can be improved by a monochromator, with the significant drawback of losing most of the beam current. Here, we study the field-emission properties of a monocrystalline niobium-tip electron field emitter at 5.2 K, well below the superconducting transition temperature. The emitter fabrication process can generate two tip configurations, with or without a nanoprotrusion at the apex, strongly influencing the field-emission energy distribution. The geometry without the nanoprotrusion has nanoampere beam currents, long-term stability, and an energy width of around 100 meV. The beam current can be increased by 2 orders of magnitude by xenon-gas adsorption. We also study the emitter performance up to 82 K and demonstrate that the energy width of the beam can be below 40 meV with high emitter brightness even at liquid-nitrogen cooling temperatures when an apex nanoprotrusion is present. Furthermore, the spatial and temporal electron-electron correlations of the field emission are studied at normal and superconducting temperatures and the influence of Nottingham heating is discussed. This monochromatic source will allow exceptional accuracy and resolution in electron microscopy, spectroscopy, and high-coherence quantum applications.
- 10 March 2023
- Published by American Physical Society (APS) in Physical Review Applied
- Vol. 19 (3) , 034036
Electron-Beam Source with a Superconducting Niobium Tip
Modern electron microscopy and spectroscopy are key technologies for studying the structure and composition of quantum and biological materials in fundamental and applied sciences. High-resolution spectroscopic techniques and aberration-corrected microscopes are often limited by the relatively large energy distribution of currently available beam sources. This can be improved by a monochromator, with the significant drawback of losing most of the beam current. Here, we study the field-emission properties of a monocrystalline niobium-tip electron field emitter at 5.2 K, well below the superconducting transition temperature. The emitter fabrication process can generate two tip configurations, with or without a nanoprotrusion at the apex, strongly influencing the field-emission energy distribution. The geometry without the nanoprotrusion has nanoampere beam currents, long-term stability, and an energy width of around 100 meV. The beam current can be increased by 2 orders of magnitude by xenon-gas adsorption. We also study the emitter performance up to 82 K and demonstrate that the energy width of the beam can be below 40 meV with high emitter brightness even at liquid-nitrogen cooling temperatures when an apex nanoprotrusion is present. Furthermore, the spatial and temporal electron-electron correlations of the field emission are studied at normal and superconducting temperatures and the influence of Nottingham heating is discussed. This monochromatic source will allow exceptional accuracy and resolution in electron microscopy, spectroscopy, and high-coherence quantum applications.
- 9 March 2023
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 7 (3) , 034403
Competition between exchange and magnetostatic energies in domain pattern transfer from (111) to a Ni thin filmWe use spin-polarized low-energy electron microscopy to investigate domain pattern transfer in a multiferroic heterostructure consisting of a (111)-oriented substrate and an epitaxial Ni film. After in situ thick-film deposition and annealing through the ferroelectric phase transition, interfacial strain transfer from ferroelastic domains in the substrate and inverse magnetostriction in the magnetic thick film introduce a uniaxial in-plane magnetic anisotropy that rotates by between alternating stripe regions. We show that two types of magnetic domain wall can be initialized in principle. Combining experimental results with micromagnetic simulations, we show that a competition between the exchange and magnetostatic energies in these domain walls has a strong influence on the magnetic domain configuration.- 9 March 2023
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 7 (3) , 034403
Competition between exchange and magnetostatic energies in domain pattern transfer from (111) to a Ni thin filmWe use spin-polarized low-energy electron microscopy to investigate domain pattern transfer in a multiferroic heterostructure consisting of a (111)-oriented substrate and an epitaxial Ni film. After in situ thick-film deposition and annealing through the ferroelectric phase transition, interfacial strain transfer from ferroelastic domains in the substrate and inverse magnetostriction in the magnetic thick film introduce a uniaxial in-plane magnetic anisotropy that rotates by between alternating stripe regions. We show that two types of magnetic domain wall can be initialized in principle. Combining experimental results with micromagnetic simulations, we show that a competition between the exchange and magnetostatic energies in these domain walls has a strong influence on the magnetic domain configuration.- Open Access
Superconducting Niobium Tip Electron Beam Source
Modern electron microscopy and spectroscopy is a key technology for studying the structure and composition of quantum and biological materials in fundamental and applied sciences. High-resolution spectroscopic techniques and aberration-corrected microscopes are often limited by the relatively large energy distribution of currently available beam sources. This can be improved by a monochromator, with the significant drawback of losing most of the beam current. Here, we study the field emission properties of a monocrystalline niobium tip electron field emitter at 5.2 K, well below the superconducting transition temperature. The emitter fabrication process can generate two tip configurations, with or without a nano-protrusion at the apex, strongly influencing the field-emission energy distribution. The geometry without the nano-protrusion has a high beam current, long-term stability, and an energy width of around 100 meV. The beam current can be increased by two orders of magnitude by xenon gas adsorption. We also studied the emitter performance up to 82 K and demonstrated the beam's energy width can be below 40 meV even at liquid nitrogen cooling temperatures when an apex nano-protrusion is present. Furthermore, the spatial and temporal electron-electron correlations of the field emission are studied at normal and superconducting temperatures and the influence of Nottingham heating is discussed. This new monochromatic source will allow unprecedented accuracy and resolution in electron microscopy, spectroscopy, and high-coherence quantum applications.
Open AccessSuperconducting Niobium Tip Electron Beam Source
Modern electron microscopy and spectroscopy is a key technology for studying the structure and composition of quantum and biological materials in fundamental and applied sciences. High-resolution spectroscopic techniques and aberration-corrected microscopes are often limited by the relatively large energy distribution of currently available beam sources. This can be improved by a monochromator, with the significant drawback of losing most of the beam current. Here, we study the field emission properties of a monocrystalline niobium tip electron field emitter at 5.2 K, well below the superconducting transition temperature. The emitter fabrication process can generate two tip configurations, with or without a nano-protrusion at the apex, strongly influencing the field-emission energy distribution. The geometry without the nano-protrusion has a high beam current, long-term stability, and an energy width of around 100 meV. The beam current can be increased by two orders of magnitude by xenon gas adsorption. We also studied the emitter performance up to 82 K and demonstrated the beam's energy width can be below 40 meV even at liquid nitrogen cooling temperatures when an apex nano-protrusion is present. Furthermore, the spatial and temporal electron-electron correlations of the field emission are studied at normal and superconducting temperatures and the influence of Nottingham heating is discussed. This new monochromatic source will allow unprecedented accuracy and resolution in electron microscopy, spectroscopy, and high-coherence quantum applications.