Boleslaw Lucznik
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Boleslaw Lucznik has a total of 8 co-authors. Here are the top co-authors by number of shared publications:
- Hideki Sakurai
Nagoya University Aichi 464-8601 Japan
1 shared publication - Kacper Sierakowski
Institute of High Pressure Physics Polish Academy of Sciences Sokolowska 29/37 01-142 Warsaw Poland
1 shared publication - Malgorzata Iwinska
Institute of High Pressure Physics Polish Academy of Sciences Sokolowska 29/37 01-142 Warsaw Poland
1 shared publication - Marcin Turek
Institute of Physics Maria Curie‐Skłodowska University Lublin Poland
1 shared publication - Michal Bockowski
Institute of High Pressure Physics, Polish Academy of Sciences
1 shared publication - Pawel Kwiatkowski
Institute of High Pressure Physics Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
1 shared publication
Latest Publications
- Open Access
- 26 August 2020
- Published by MDPI AG in Electronics
- Vol. 9 (9) , 1380
High Pressure Processing of Ion Implanted GaN
It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium.
- 26 August 2020
- Published by MDPI AG in Electronics
- Vol. 9 (9) , 1380
Open AccessHigh Pressure Processing of Ion Implanted GaN
It is well known that ion implantation is one of the basic tools for semiconductor device fabrication. The implantation process itself damages, however, the crystallographic lattice of the semiconductor. Such damage can be removed by proper post-implantation annealing of the implanted material. Annealing also allows electrical activation of the dopant and creates areas of different electrical types in a semiconductor. However, such thermal treatment is particularly challenging in the case of gallium nitride since it decomposes at relatively low temperature (~800 °C) at atmospheric pressure. In order to remove the implantation damage in a GaN crystal structure, as well as activate the implanted dopants at ultra-high pressure, annealing process is proposed. It will be described in detail in this paper. P-type GaN implanted with magnesium will be briefly discussed. A possibility to analyze diffusion of any dopant in GaN will be proposed and demonstrated on the example of beryllium.