SSSatyaprasad P. Senanayak

Satyaprasad P. Senanayak

*This is an algorithmically generated author record based on publicly available information.

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Satyaprasad P. Senanayak has a total of 18 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Detection of X‐Rays by Solution‐Processed Cesium‐Containing Mixed Triple Cation Perovskite Thin Films

    by Laura Basiricò, Satyaprasad P. Senanayak, Andrea Ciavatti, Mojtaba Abdi‐Jalebi, Beatrice Fraboni, Henning Sirringhaus

    Materials and technology development for designing innovative and efficient X‐ray radiation detectors is of utmost importance for a wide range of applications ranging from security to medical imaging. Here, highly sensitive direct X‐ray detectors based on novel cesium (Cs)‐based triple cation mixed halide perovskite thin films are reported. Despite being in a thin film form, the devices exhibit a remarkably high X‐ray sensitivity of (3.7 ± 0.1) µC Gy−1 cm−2 under short‐circuit conditions. At a small reverse bias of 0.4 V, the sensitivity further increases by orders of magnitude reaching a record value of (97 ± 1) µC Gy−1 cm−2 which surpasses state‐of‐the‐art inorganic large‐area detectors (a‐Se and poly‐CZT). Based on detailed structural, electrical, and spectroscopic investigations, the exceptional sensitivity of the triple cation Cs perovskite is attributed to its high ambipolar mobility‐lifetime product as well as to the formation of a pure stable perovskite phase with a low degree of energetic disorder, due to an efficient solution‐based alloying of individual n‐ and p‐type perovskite semiconductors.


  • Open Access

    Understanding charge transport in lead iodide perovskite thin-film field-effect transistors

    by Satyaprasad P. Senanayak, Bingyan Yang, Tudor H. Thomas, Nadja Giesbrecht, Wenchao Huang, Eliot Gann, Bhaskaran Nair, Karl Goedel, Suchi Guha, Xavier Moya, et al.

    Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+ cations, and thermal vibrations of the lead halide inorganic cages.