Paul William Loscutoff
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Research Interests
Paul William Loscutoff has a total of 3 co-authors. Here are the top co-authors by number of shared publications:
- Scott B. Clendenning
Intel Corporation, Foundry Technology Research, 2501 North East Century Boulevard, Hillsboro, Oregon 97124, USA
1 shared publication - Stacey F. Bent
Department of Chemical Engineering, Stanford University, Stanford, USA
1 shared publication - Stacey F. Bent
Department of Chemical Engineering, Stanford University, 381 North-South Mall, Stanford, CA 94305, USA
1 shared publication
Latest Publications
- 1 January 2010
- Published by Springer Nature in MRS Proceedings
- Vol. 1249
Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition
Device scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.
- 1 January 2010
- Published by Springer Nature in MRS Proceedings
- Vol. 1249
Fabrication of Organic Thin Films for Copper Diffusion Barrier Layers Using Molecular Layer Deposition
Device scaling predicts that copper barrier layers of under 3 nm in thickness will soon be needed in back-end processing for integrated circuits, motivating the development of new barrier layer materials. In this work, nanoscale organic thin films for use as possible copper diffusion barrier layers are deposited by molecular layer deposition (MLD) utilizing a series of self-limiting reactions of organic molecules. MLD can be used to tailor film properties to optimize desirable barrier properties, including density, copper surface adhesion, thermal stability, and low copper diffusion. Three systems are examined as copper diffusion barriers, a polyurea film deposited by the reaction of 1,4-phenylene diisocyanate (PDIC) and ethylenediamine (ED), a polyurea film with a sulfide-modified backbone, and a polythiourea films using a modified coupling chemistry. Following deposition of the MLD films, copper is sputter deposited. The copper diffusion barrier properties of the film are tested through adhesion and annealing tests, including 4-point bend testing and TEM imaging to examine the level of copper penetration. The promise and challenges of MLD-formed organic copper diffusion barriers will be discussed.
- 1 May 2006
- Published by Annual Reviews in Annual Review of Physical Chemistry
- Vol. 57 (1) , 467-495
REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation and Functionalization
▪ Abstract With the rapidly changing materials needs of modern microelectronics, germanium provides an opportunity for future-generation devices. Controlling germanium interfaces will be essential for this purpose. We review germanium surface reactivity, beginning with a description of the most commonly used surfaces, Ge(100) and Ge(111). An analysis of oxide formation shows why the poor oxide properties have hindered practical use of germanium to date. This is followed by an examination of alternate means of surface passivation, with particular attention given to sulfide, chloride, and hydride termination. Specific tailoring of the interface properties is possible through organic functionalization. The few solution functionalization methods that have been studied are reviewed. Vacuum functionalization has been studied to a much greater extent, with dative bonding and cycloaddition reactions emerging as principle reaction mechanisms. These are reviewed through molecular reaction studies that demonstrate the versatility of the germanium surface.
- 1 May 2006
- Published by Annual Reviews in Annual Review of Physical Chemistry
- Vol. 57 (1) , 467-495
REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation and Functionalization
▪ Abstract With the rapidly changing materials needs of modern microelectronics, germanium provides an opportunity for future-generation devices. Controlling germanium interfaces will be essential for this purpose. We review germanium surface reactivity, beginning with a description of the most commonly used surfaces, Ge(100) and Ge(111). An analysis of oxide formation shows why the poor oxide properties have hindered practical use of germanium to date. This is followed by an examination of alternate means of surface passivation, with particular attention given to sulfide, chloride, and hydride termination. Specific tailoring of the interface properties is possible through organic functionalization. The few solution functionalization methods that have been studied are reviewed. Vacuum functionalization has been studied to a much greater extent, with dative bonding and cycloaddition reactions emerging as principle reaction mechanisms. These are reviewed through molecular reaction studies that demonstrate the versatility of the germanium surface.