A. Srinivasan

The reproducible operation of quantum electronic devices is a key requirement for future quantum information processing and spintronics applications. Traditionally, quantum devices have been fabricated from modulation-doped heterostructures, where there is an intrinsic lack of reproducibility due to the random potential from ionized donors. Here, we show that we can greatly improve reproducibility over modulation-doped devices by using a completely undoped architecture, with superior uniformity in the confinement potential and more consistent operating voltages for both electron and hole devices. Our results demonstrate that undoped heterostructures have significant advantages over modulation doping for reproducible manufacturing of quantum devices.

The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field. Here we demonstrate a general method that exploits the nonlinear interactions between spin and charge currents to perform all-electrical, rapid, and noninvasive detection of spin accumulation without the need for a magnetic field. We demonstrate the operation of this technique with ballistic GaAs holes as a model system with strong spin-orbit coupling, in which a quantum point contact provides the nonlinear energy filter. This approach is generally applicable to electron and hole systems with strong spin-orbit coupling.