Benjamin J. Jacot
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Benjamin J. Jacot has a total of 23 co-authors. Here are the top co-authors by number of shared publications:
- Pietro Gambardella
ETH Zurich
4 shared publications - Saül Vélez
IFIMAC and Departamento de Física de la Materia Condensada Universidad Autónoma de Madrid 28049 Madrid Spain
3 shared publications C.-H. Lambert
Department of Materials, ETH Zürich, CH-8093 Zürich, Switzerland
2 shared publications- Manfred Fiebig
Department of Materials, ETH Zurich, Zürich, Switzerland
2 shared publications - Morgan Trassin
Department of Materials ETH Zurich Zurich Switzerland
2 shared publications - Can Onur Avci
Institut de Ciència de Materials de Barcelona (ICMAB‐CSIC) Campus de la UAB Bellaterra 08193 Spain
1 shared publication
Latest Publications
- Open Access
- 1 September 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 140 (9)
Challenges in orbital current-driven domain wall motion in light metal/ferrimagnet heterostructures
Recent advances in spintronics suggest that orbital Hall currents generated by charge injection in light metals can provide nonequilibrium angular momentum without relying on strong spin–orbit coupling (SOC). Here, we examine whether such orbital currents can drive domain wall (DW) motion in an amorphous ferrimagnetic alloy, Gd25(Fe9Co1)75 (GFC), where the rare-earth sublattice offers strong SOC for orbital-to-spin conversion. We compare three representative heterostructures: Pt/GFC as a spin Hall reference, light-metal (Mn or Ti)/GFC for direct orbital-current injection, and light-metal/Pt/GFC incorporating an ultrathin Pt layer for orbital-to-spin conversion. Whereas Pt/GFC exhibits robust and reproducible spin–orbit-torque-driven DW motion, no current-driven DW motion is detected in Mn/GFC or Ti/GFC. Second-harmonic Hall measurements nevertheless reveal finite damping-like torques in both Mn/GFC and Ti/GFC, demonstrating that angular-momentum transfer into GFC does occur but is far weaker than in Pt/GFC. Inserting a 1 nm-thick Pt conversion layer strongly enhances the damping-like torque and restores DW motion. Thickness-dependent analysis further shows that DW mobility and depinning thresholds correlate with the interfacial Dzyaloshinskii–Moriya interaction and domain-wall width, highlighting weak torque conversion and insufficient interfacial stabilization of chiral DWs as key challenges for orbital-driven DW motion in light-metal/ferrimagnet heterostructures.
- 1 September 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 140 (9)
Open AccessChallenges in orbital current-driven domain wall motion in light metal/ferrimagnet heterostructures
Recent advances in spintronics suggest that orbital Hall currents generated by charge injection in light metals can provide nonequilibrium angular momentum without relying on strong spin–orbit coupling (SOC). Here, we examine whether such orbital currents can drive domain wall (DW) motion in an amorphous ferrimagnetic alloy, Gd25(Fe9Co1)75 (GFC), where the rare-earth sublattice offers strong SOC for orbital-to-spin conversion. We compare three representative heterostructures: Pt/GFC as a spin Hall reference, light-metal (Mn or Ti)/GFC for direct orbital-current injection, and light-metal/Pt/GFC incorporating an ultrathin Pt layer for orbital-to-spin conversion. Whereas Pt/GFC exhibits robust and reproducible spin–orbit-torque-driven DW motion, no current-driven DW motion is detected in Mn/GFC or Ti/GFC. Second-harmonic Hall measurements nevertheless reveal finite damping-like torques in both Mn/GFC and Ti/GFC, demonstrating that angular-momentum transfer into GFC does occur but is far weaker than in Pt/GFC. Inserting a 1 nm-thick Pt conversion layer strongly enhances the damping-like torque and restores DW motion. Thickness-dependent analysis further shows that DW mobility and depinning thresholds correlate with the interfacial Dzyaloshinskii–Moriya interaction and domain-wall width, highlighting weak torque conversion and insufficient interfacial stabilization of chiral DWs as key challenges for orbital-driven DW motion in light-metal/ferrimagnet heterostructures.
- Open Access
- 7 March 2024
- Published by Wiley in Advanced Materials
- Vol. 36 (23) , e2312437
Reversible Optical Control of Polarization in Epitaxial Ferroelectric Thin Films
Light is an effective tool to probe the polarization and domain distribution in ferroelectric materials passively, that is, non‐invasively, for example, via optical second harmonic generation (SHG). With the emergence of oxide electronics, there is now a strong demand to expand the role of light toward active control of the polarization. In this work, optical control of the ferroelectric polarization is demonstrated in prototypical epitaxial PbZrxTi1−xO3 (PZT)‐based heterostructures. This is accomplished in three steps, using above‐bandgap UV light, while tracking the response of the polarization with optical SHG. First, it is found that UV‐light exposure induces a transient enhancement or suppression of the ferroelectric polarization in films with an upward‐ or downward‐oriented polarization, respectively. This behavior is attributed to a modified charge screening driven by the separation of photoexcited charge carriers at the Schottky interface of the ferroelectric thin film. Second, by taking advantage of this optical handle on electrostatics, remanent optical poling from a pristine multi‐domain into a single‐domain configuration is accomplished. Third, via thermal annealing or engineered electrostatic boundary conditions, a complete reversibility of the optical poling is further achieved. Hence, this work paves the way for the all‐optical control of the spontaneous polarization in ferroelectric thin films.
- 7 March 2024
- Published by Wiley in Advanced Materials
- Vol. 36 (23) , e2312437
Open AccessReversible Optical Control of Polarization in Epitaxial Ferroelectric Thin Films
Light is an effective tool to probe the polarization and domain distribution in ferroelectric materials passively, that is, non‐invasively, for example, via optical second harmonic generation (SHG). With the emergence of oxide electronics, there is now a strong demand to expand the role of light toward active control of the polarization. In this work, optical control of the ferroelectric polarization is demonstrated in prototypical epitaxial PbZrxTi1−xO3 (PZT)‐based heterostructures. This is accomplished in three steps, using above‐bandgap UV light, while tracking the response of the polarization with optical SHG. First, it is found that UV‐light exposure induces a transient enhancement or suppression of the ferroelectric polarization in films with an upward‐ or downward‐oriented polarization, respectively. This behavior is attributed to a modified charge screening driven by the separation of photoexcited charge carriers at the Schottky interface of the ferroelectric thin film. Second, by taking advantage of this optical handle on electrostatics, remanent optical poling from a pristine multi‐domain into a single‐domain configuration is accomplished. Third, via thermal annealing or engineered electrostatic boundary conditions, a complete reversibility of the optical poling is further achieved. Hence, this work paves the way for the all‐optical control of the spontaneous polarization in ferroelectric thin films.
- 12 October 2022
- Published by American Physical Society (APS) in Physical Review B
- Vol. 106 (13) , 134411
Control of field- and current-driven magnetic domain wall motion by exchange bias in trilayersWe investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider trilayers as a model system, in which the magnetization of the Co layer can be exchanged biased out-of-plane or in-plane depending on the field-cooling direction. In field-driven experiments, the in-plane exchange bias favors the propagation of the domain walls with internal magnetization parallel to the exchange-bias field. In current-driven experiments, the domain walls propagate along the current direction, but the domain wall velocity increases and decreases symmetrically (antisymmetrically) for both current polarities when the exchange bias is parallel (perpendicular) to the current line. At zero external field, the exchange bias modifies the velocity of current-driven domain wall motion by a factor of 10. We also find that the exchange bias remains stable under external fields up to 15 kOe and nanosecond-long current pulses with current density up to A/m. Our results demonstrate versatile control of the domain wall motion by exchange bias, which is relevant to achieve field-free switching of the magnetization in perpendicular systems and current-driven manipulation of domain walls velocity in spintronic devices.- 12 October 2022
- Published by American Physical Society (APS) in Physical Review B
- Vol. 106 (13) , 134411
Control of field- and current-driven magnetic domain wall motion by exchange bias in trilayersWe investigate the motion of magnetic domain walls driven by magnetic fields and current-driven spin-orbit torques in an exchange-biased system with perpendicular magnetization. We consider trilayers as a model system, in which the magnetization of the Co layer can be exchanged biased out-of-plane or in-plane depending on the field-cooling direction. In field-driven experiments, the in-plane exchange bias favors the propagation of the domain walls with internal magnetization parallel to the exchange-bias field. In current-driven experiments, the domain walls propagate along the current direction, but the domain wall velocity increases and decreases symmetrically (antisymmetrically) for both current polarities when the exchange bias is parallel (perpendicular) to the current line. At zero external field, the exchange bias modifies the velocity of current-driven domain wall motion by a factor of 10. We also find that the exchange bias remains stable under external fields up to 15 kOe and nanosecond-long current pulses with current density up to A/m. Our results demonstrate versatile control of the domain wall motion by exchange bias, which is relevant to achieve field-free switching of the magnetization in perpendicular systems and current-driven manipulation of domain walls velocity in spintronic devices.- Top Cited Papers
- 4 July 2022
- Published by Springer Nature in Nature Nanotechnology
- Vol. 17 (8) , 834-841
Current-driven dynamics and ratchet effect of skyrmion bubbles in a ferrimagnetic insulator
Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for the development of high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate the room-temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 coupled to Pt, showing the current-induced motion of individual skyrmion bubbles. The ferrimagnetic order of the crystal together with the interplay of spin–orbit torques and pinning determine the skyrmion dynamics in Tm3Fe5O12 and result in a strong skyrmion Hall effect characterized by a negative deflection angle and hopping motion. Further, we show that the velocity and depinning threshold of the skyrmion bubbles can be modified by exchange coupling Tm3Fe5O12 to an in-plane magnetized Y3Fe5O12 layer, which distorts the spin texture of the skyrmions and leads to directional-dependent rectification of their dynamics. This effect, which is equivalent to a magnetic ratchet, is exploited to control the skyrmion flow in a racetrack-like device.
- 4 July 2022
- Published by Springer Nature in Nature Nanotechnology
- Vol. 17 (8) , 834-841
Top Cited PapersCurrent-driven dynamics and ratchet effect of skyrmion bubbles in a ferrimagnetic insulator
Magnetic skyrmions are compact chiral spin textures that exhibit a rich variety of topological phenomena and hold potential for the development of high-density memory devices and novel computing schemes driven by spin currents. Here, we demonstrate the room-temperature interfacial stabilization and current-driven control of skyrmion bubbles in the ferrimagnetic insulator Tm3Fe5O12 coupled to Pt, showing the current-induced motion of individual skyrmion bubbles. The ferrimagnetic order of the crystal together with the interplay of spin–orbit torques and pinning determine the skyrmion dynamics in Tm3Fe5O12 and result in a strong skyrmion Hall effect characterized by a negative deflection angle and hopping motion. Further, we show that the velocity and depinning threshold of the skyrmion bubbles can be modified by exchange coupling Tm3Fe5O12 to an in-plane magnetized Y3Fe5O12 layer, which distorts the spin texture of the skyrmions and leads to directional-dependent rectification of their dynamics. This effect, which is equivalent to a magnetic ratchet, is exploited to control the skyrmion flow in a racetrack-like device.
- 3 November 2020
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 128 (17) , 173902
Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers
Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching. We report systematic measurements of the current-induced changes of the transverse and longitudinal resistance of Pt and Pt/NiO layers deposited on insulating substrates, namely, , , and . We identify the range of pulse amplitude and length that can be used without affecting the resistance and show that it increases with the device size and thermal diffusivity of the substrate. No significant difference is observed in the resistive response of Pt and NiO/Pt devices, thus precluding evidence on the switching of antiferromagnetic domains in NiO. The variation of the transverse resistance is associated to a thermally activated process in Pt that decays following a double exponential law with characteristic timescales of a few minutes to hours. We use a Wheatstone bridge model to discriminate between positive and negative resistance changes, highlighting competing annealing and electromigration effects. Depending on the training of the devices, the transverse resistance can either increase or decrease between current pulses. Furthermore, we elucidate the origin of the nonmonotonic resistance baseline, which we attribute to training effects combined with the asymmetric distribution of the current. These results provide insight into the origin of current-induced resistance changes in metal layers and a guide to minimize nonmagnetic artifacts in switching experiments of antiferromagnets.- 3 November 2020
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 128 (17) , 173902
Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers
Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching. We report systematic measurements of the current-induced changes of the transverse and longitudinal resistance of Pt and Pt/NiO layers deposited on insulating substrates, namely, , , and . We identify the range of pulse amplitude and length that can be used without affecting the resistance and show that it increases with the device size and thermal diffusivity of the substrate. No significant difference is observed in the resistive response of Pt and NiO/Pt devices, thus precluding evidence on the switching of antiferromagnetic domains in NiO. The variation of the transverse resistance is associated to a thermally activated process in Pt that decays following a double exponential law with characteristic timescales of a few minutes to hours. We use a Wheatstone bridge model to discriminate between positive and negative resistance changes, highlighting competing annealing and electromigration effects. Depending on the training of the devices, the transverse resistance can either increase or decrease between current pulses. Furthermore, we elucidate the origin of the nonmonotonic resistance baseline, which we attribute to training effects combined with the asymmetric distribution of the current. These results provide insight into the origin of current-induced resistance changes in metal layers and a guide to minimize nonmagnetic artifacts in switching experiments of antiferromagnets.