Kevin Oliveira

In response to climate and resource challenges, the transition to a renewable and decentralized energy system is imperative. Ultrathin Cu(In,Ga)Se₂ (CIGS)‐based solar cells are compatible with such transition due to their low material usage and improved production throughput. Despite the benchmark efficiency of CIGS technology, ultrathin configurations face efficiency drops arising from increased rear interface recombination and incomplete light absorption. Dielectric passivation schemes address rear interface recombination, but achieving simultaneous electrical and optical gains is crucial for thinning down the absorber. Plasmonic nanoparticles emerge as a solution, enhancing light interaction through resonant scattering. In the proposed architecture, the nanoparticles are encapsulated within a dielectric rear passivation layer, combining effective passivation and light trapping. A controlled deposition and encapsulation of individualized nanoparticles is achieved by an optimized process flow using microfluidic devices and nanoimprint lithography. With the developed plasmonic and passivated architecture, a 3.7 mA cm⁻² short‐circuit current density and a 23 mV open‐circuit voltage improvements are obtained, leading to an almost 2% increase in light‐to‐power conversion efficiency compared to a reference device. This work showcases the developed architecture potential to tackle the electrical and optical downfalls arising from the absorber thickness reduction, contributing to the dissemination of ultrathin technology.

A decentralized energy system requires photovoltaic solutions to meet new aesthetic paradigms, such as lightness, flexibility, and new form factors. Notwithstanding, the materials shortage in the Green Transition is a concern gaining momentum due to their foreseen continuous demand. A fruitful strategy to shrink the absorber thickness, meeting aesthetic and shortage materials consumption targets, arises from interface passivation. However, a deep understanding of passivated systems is required to close the efficiency gap between ultra‐thin and thin film devices, and to mono‐Si. Herein, a (Ag,Cu)(In,Ga)Se₂ ultra‐thin solar cell, with 92% passivated rear interface area, is compared with a conventional nonpassivated counterpart. A thin MoSe₂ layer, for a quasi‐ohmic contact, is present in the two architectures at the contacts, despite the passivated device narrow line scheme. The devices present striking differences in charge carrier dynamics. Electrical and optoelectronic analysis combined with SCAPS modelling suggest a lower recombination rate for the passivated device, through a reduction on the rear surface recombination velocity and overall defects, comparing with the reference solar cell. The new architecture allows for a 2% efficiency improvement on a 640 nm ultra‐thin device, from 11% to 13%, stemming from an open circuit voltage increase of 108 mV.

Interface recombination in sub-μm optoelectronics has a major detrimental impact on devices’ performance, showing the need for tailored passivation strategies to reach a technological boost. In this article, SiO _x passivation based substrates were developed and integrated into ultrathin Cu(In,Ga)Se ₂ (CIGS) solar cells. This article aims to understand the impact of a passivation strategy, which uses several SiO _x layer thicknesses (3, 8, and 25 nm) integrated into high-performance substrates (HPS). The experimental study is complemented with 3-D lumerical finite-difference time-domain and 2-D Silvaco ATLAS optical and electrical simulations, respectively, to perform a decoupling of optical and electronic gains, allowing for a deep discussion on the impact of the SiO _x layer thickness in the CIGS solar cell performance. This article shows that as the passivation layer thickness increases, a rise in parasitic losses is observed. Hence, a balance between beneficial passivation and optical effects with harmful architectural constraints defines a threshold thickness to attain the best solar cell performance. Analyzing their electrical parameters, the 8-nm novel SiO _x based substrate achieved a light to power conversion efficiency value of 13.2%, a 1.3% absolute improvement over the conventional Mo substrate (without SiO _x ).

The incorporation of nanostructures in optoelectronic devices for enhancing their optical performance is widely studied. However, several problems related to the processing complexity and the low performance of the nanostructures have hindered such actions in real‐life devices. Herein, a novel way of introducing gold nanoparticles in a solar cell structure is proposed in which the nanostructures are encapsulated with a dielectric layer, shielding them from high temperatures and harsh growth processing conditions of the remaining device. Through optical simulations, an enhancement of the effective optical path length of approximately four times the nominal thickness of the absorber layer is verified with the new architecture. Furthermore, the proposed concept in a Cu(In,Ga)Se₂ solar cell device is demonstrated, where the short‐circuit current density is increased by 17.4%. The novel structure presented in this work is achieved by combining a bottom‐up chemical approach of depositing the nanostructures with a top‐down photolithographic process, which allows for an electrical contact.

Surface-enhanced Raman scattering (SERS) spectroscopy stands out due to its sensitivity, selectivity, and multiplex ability. The development of ready-to-use, simple, and low-cost SERS substrates is one of the main challenges of the field. In this paper, the intrinsic reproducibility of microfluidics technology was used for the fabrication of self-assembled nanoparticle structures over a paper film. The paper SERS substrates were fabricated by assembling anisotropic particles, gold nanostars (GNSs), and nanorods (NRs) onto paper to offer an extra enhancement to reach ultra-sensitive detection limits. A polydimethylsiloxane PDMS-paper hybrid device was used to control the drying kinetics of the nanoparticles over the paper substrate. This method allowed a high reproducibility and homogeneity of the fabrication of SERS substrates that reach limits of detection down to the picomolar range. This simple and low-cost fabrication of a paper-based sensing device was tested for the discrimination of different cell lineages.