Patrick Soukiassian
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Research Interests
Patrick Soukiassian has a total of 41 co-authors. Here are the top co-authors by number of shared publications:
Z. Hurych
Department of Physics, Northern Illinois University, DeKalb, IL 60115–2854, USA
4 shared publicationsD. Crouch
Northern Illinois University
2 shared publicationsD. Hochereau
Centre d’Études Nucléaires de Saclay
2 shared publicationsJ. Peng
Northern Illinois University
2 shared publicationsP. S. Mangat
Northern Illinois University
2 shared publicationsP.S. Mangat
Département de Physique, Université de Paris-Sud, 91405 Orsay Cedex, France
2 shared publications
Latest Publications
- 29 December 2020
- Published by American Physical Society (APS) in Physical Review B
- Vol. 102 (24) , 245306
Surface relaxation and rumpling of Sn-dopedWe have studied the surface structure of single-crystal, wide-gap semiconductor using x-ray photoelectron diffraction (XPD), low-energy electron diffraction (LEED), and x-ray photoelectron spectroscopy (XPS). The XPS measurements show typical spectra for stoichiometric . Annealing in vacuum produced a sharp () LEED pattern, characteristic of the monoclinic structure. The XPD angular anisotropies were collected for the Ga and O core levels. Surface interlayer relaxation up to 8% of the bulk interplanar distance and 0.11–0.14 rumpling are observed at the surface. At the surface, the oxygen atoms shift toward the vacuum with respect to the gallium atoms. The rumpling decreases to zero and and the interplanar distance reaches the bulk value of 1.52 by the sixth atomic layer. The surface structure agrees with that predicted by first-principles density functional theory calculations which, in addition, suggest a significant band gap narrowing of eV in the surface layer, due to surface states spatially localized on surface oxygen atoms of type.- 29 December 2020
- Published by American Physical Society (APS) in Physical Review B
- Vol. 102 (24) , 245306
Surface relaxation and rumpling of Sn-dopedWe have studied the surface structure of single-crystal, wide-gap semiconductor using x-ray photoelectron diffraction (XPD), low-energy electron diffraction (LEED), and x-ray photoelectron spectroscopy (XPS). The XPS measurements show typical spectra for stoichiometric . Annealing in vacuum produced a sharp () LEED pattern, characteristic of the monoclinic structure. The XPD angular anisotropies were collected for the Ga and O core levels. Surface interlayer relaxation up to 8% of the bulk interplanar distance and 0.11–0.14 rumpling are observed at the surface. At the surface, the oxygen atoms shift toward the vacuum with respect to the gallium atoms. The rumpling decreases to zero and and the interplanar distance reaches the bulk value of 1.52 by the sixth atomic layer. The surface structure agrees with that predicted by first-principles density functional theory calculations which, in addition, suggest a significant band gap narrowing of eV in the surface layer, due to surface states spatially localized on surface oxygen atoms of type.- 14 March 2016
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 144 (10) , 104705
Ab initio parameterization of a charge optimized many-body forcefield for Si–SiO2: Validation and thermal transport in nanostructures
In an effort to extend the reach of current ab initio calculations to simulations requiring millions of configurations for complex systems such as heterostructures, we have parameterized the third-generation Charge Optimized Many-Body (COMB3) potential using solely ab initio total energies, forces, and stress tensors as input. The quality and the predictive power of the new forcefield are assessed by computing properties including the cohesive energy and density of SiO2 polymorphs, surface energies of alpha-quartz, and phonon densities of states of crystalline and amorphous phases of SiO2. Comparison with data from experiments, ab initio calculations, and molecular dynamics simulations using published forcefields including BKS (van Beest, Kramer, and van Santen), ReaxFF, and COMB2 demonstrates an overall improvement of the new parameterization. The computed temperature dependence of the thermal conductivity of crystalline alpha-quartz and the Kapitza resistance of the interface between crystalline Si(001) and amorphous silica is in excellent agreement with experiment, setting the stage for simulations of complex nanoscale heterostructures.
- 14 March 2016
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 144 (10) , 104705
Ab initio parameterization of a charge optimized many-body forcefield for Si–SiO2: Validation and thermal transport in nanostructures
In an effort to extend the reach of current ab initio calculations to simulations requiring millions of configurations for complex systems such as heterostructures, we have parameterized the third-generation Charge Optimized Many-Body (COMB3) potential using solely ab initio total energies, forces, and stress tensors as input. The quality and the predictive power of the new forcefield are assessed by computing properties including the cohesive energy and density of SiO2 polymorphs, surface energies of alpha-quartz, and phonon densities of states of crystalline and amorphous phases of SiO2. Comparison with data from experiments, ab initio calculations, and molecular dynamics simulations using published forcefields including BKS (van Beest, Kramer, and van Santen), ReaxFF, and COMB2 demonstrates an overall improvement of the new parameterization. The computed temperature dependence of the thermal conductivity of crystalline alpha-quartz and the Kapitza resistance of the interface between crystalline Si(001) and amorphous silica is in excellent agreement with experiment, setting the stage for simulations of complex nanoscale heterostructures.
- 1 May 2006
- Published by Elsevier in Applied Surface Science
- Vol. 252 (15) , 5445-5448
A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps
- 1 May 2006
- Published by Elsevier in Applied Surface Science
- Vol. 252 (15) , 5445-5448
A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps
- 30 June 2004
- Published by American Physical Society (APS) in Physical Review B
- Vol. 69 (24) , 245326
Experimental and theoretical electronic structure determination of thesurface reconstructionWe study the electronic band structure of the surface reconstruction by combined angle-resolved ultraviolet photoemission spectroscopy experiments and first principles electronic structure calculations. The experimental and theoretical dispersion curves are found to be in good agreement. Four occupied electronic surface states are found along the two high symmetry directions (- and --) of the surface Brillouin zone. The surface state located around below the Fermi level displays a strong dispersion along the direction and a weak dispersion along --. A weak coupling is found between up- and down-dimers belonging to two different adjacent dimer rows. The electronic structure is discussed in the context of the available real-space models for the reconstruction. The experimental band structure is inconsistent with a model of missing rows of asymmetric dimers (MRAD) while in reasonable agreement with the alternately up- and down-dimer (AUDD) model of the surface reconstruction.- 30 June 2004
- Published by American Physical Society (APS) in Physical Review B
- Vol. 69 (24) , 245326
Experimental and theoretical electronic structure determination of thesurface reconstructionWe study the electronic band structure of the surface reconstruction by combined angle-resolved ultraviolet photoemission spectroscopy experiments and first principles electronic structure calculations. The experimental and theoretical dispersion curves are found to be in good agreement. Four occupied electronic surface states are found along the two high symmetry directions (- and --) of the surface Brillouin zone. The surface state located around below the Fermi level displays a strong dispersion along the direction and a weak dispersion along --. A weak coupling is found between up- and down-dimers belonging to two different adjacent dimer rows. The electronic structure is discussed in the context of the available real-space models for the reconstruction. The experimental band structure is inconsistent with a model of missing rows of asymmetric dimers (MRAD) while in reasonable agreement with the alternately up- and down-dimer (AUDD) model of the surface reconstruction.- 17 December 2001
- Published by Elsevier in Applied Surface Science
- Vol. 184 (1-4) , 466-470
Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels
- 17 December 2001
- Published by Elsevier in Applied Surface Science
- Vol. 184 (1-4) , 466-470
Sensitivity of p–n junction based on SiC doped with deep impurity acceptor levels
- 1 April 1998
- Published by Elsevier in Thin Solid Films
- Vol. 318 (1-2) , 136-139
Reconstruction of the Si-terminated β-SiC(100) surface
- 1 April 1998
- Published by Elsevier in Thin Solid Films
- Vol. 318 (1-2) , 136-139
Reconstruction of the Si-terminated β-SiC(100) surface
- 1 October 1995
- Published by World Scientific Pub Co Pte Ltd in Surface Review and Letters
- Vol. 02 (05) , 549-556
INITIAL STEPS OF ALKALI-METAL-PROMOTED OXIDATION OF THE Al(111) SURFACE
We investigate the initial Na-promoted oxidation of an Al surface at room temperature by core-level photoemission spectroscopy using synchrotron radiation. We bring the first evidence that, in the initial state, adsorbed oxygen atoms break the Na-Al bonds. This leads to the formation of an intermediate oxidation state involving both Na and Al sites with oxygen atom in a bridge-type site. This bonding configuration is shown to result from the Na/Al intermixing and appears as a precursor step playing a key role in the observed promoted oxidation. It is also likely to explain the formation, upon annealing, of Al oxides having a higher oxygen content than Al 2 O 3.
- 1 October 1995
- Published by World Scientific Pub Co Pte Ltd in Surface Review and Letters
- Vol. 02 (05) , 549-556
INITIAL STEPS OF ALKALI-METAL-PROMOTED OXIDATION OF THE Al(111) SURFACE
We investigate the initial Na-promoted oxidation of an Al surface at room temperature by core-level photoemission spectroscopy using synchrotron radiation. We bring the first evidence that, in the initial state, adsorbed oxygen atoms break the Na-Al bonds. This leads to the formation of an intermediate oxidation state involving both Na and Al sites with oxygen atom in a bridge-type site. This bonding configuration is shown to result from the Na/Al intermixing and appears as a precursor step playing a key role in the observed promoted oxidation. It is also likely to explain the formation, upon annealing, of Al oxides having a higher oxygen content than Al 2 O 3.
- 1 April 1993
- Published by Elsevier in Surface Science Letters
- Vol. 285 (1-2) , A310
Polarization-dependent photoemission EXAFS investigation of the InP(110) surface structure
- 1 April 1993
- Published by Elsevier in Surface Science Letters
- Vol. 285 (1-2) , A310
Polarization-dependent photoemission EXAFS investigation of the InP(110) surface structure
- 1 January 1993
- Published by Springer Nature
- p. 267-272
Photon Stimulated H+ Ion Desorption Studies of Silicon Surfaces Covered by Alkali Metals
- 1 January 1993
- Published by Springer Nature
- p. 267-272
Photon Stimulated H+ Ion Desorption Studies of Silicon Surfaces Covered by Alkali Metals
- 1 January 1993
- Published by Springer Nature
- p. 263-266
Probing GaSb(110) Surface and Interfaces by Photon Stimulated Desorption (PSD)
- 1 January 1993
- Published by Springer Nature
- p. 263-266
Probing GaSb(110) Surface and Interfaces by Photon Stimulated Desorption (PSD)