Wei Luo

Ferroelectricity is a cornerstone of functional materials research, enabling diverse technologies from nonvolatile memory to optoelectronics. Recently, type-I integer quantum ferroelectricity (IQFE), unconstrained by symmetry, has been proposed and experimentally demonstrated; however, as it arises from ionic displacements of an integer lattice vector, the initial and final states are macroscopically indistinguishable, rendering the physical properties unchanged. Here, we propose the nontrivial counterpart (i.e., type-II IQFE) where the polarization difference between the initial and final states is quantized but the macroscopical properties differ. We further demonstrate the existence of type-II IQFE in bulk chiral tellurium. In few-layer tellurium, the total polarization remains nearly quantized, composed of a bulk-inherited quantum component and a small surface-induced contribution. Molecular dynamics simulations reveal surface-initiated, layer-by-layer switching driven by reduced energy barriers, explaining why ferroelectricity has been observed experimentally in few-layer tellurium but not in bulk tellurium. Interestingly, the chirality of the initial and final states in bulk tellurium is opposite, suggesting another way to control structural chirality with electric field in chiral photonics and nonvolatile ferroelectric memory devices.

Emerging ferroic materials may pave a new way to next‐generation nanoelectronic and spintronic devices due to their interesting physical properties. This work systematically reviews unconventional ferroelectric systems, from Hf‐based and elementary ferroelectrics to stacking ferroelectricity, polar metallicity, fractional quantum ferroelectricity, wurtzite‐type ferroelectricity, and freestanding membranes ferroelectricity. Moreover, multiferroic materials are reviewed, particularly the interplay between novel magnetic states and ferroelectricity, as well as ferrovalley‐ferroelectric coupling. Finally, the conclusion is drawn by discussing current challenges and future opportunities in this field.

Quantum fluctuations (QFs) caused by zero-point phonon vibrations (ZPPVs) are known to prevent the occurrence of polar phases in bulk incipient ferroelectrics down to 0 K. On the other hand, little is known about the effects of QFs on the recently discovered topological patterns in ferroelectric nanostructures. Here, by using an atomistic effective Hamiltonian within classical Monte Carlo (CMC) and path integral quantum Monte Carlo (PI-QMC), we unveil how QFs affect the topology of several dipolar phases in ultrathin Pb(Zr_0.4Ti_0.6)O₃(PZT) films. In particular, our PI-QMC simulations show that the ZPPVs do not suppress polar patterns but rather stabilize the labyrinth, bimeron and bubble phases within a wider range of bias field magnitudes. Moreover, we reveal that quantum fluctuations induce a quantum critical point (QCP) separating a hexagonal bubble lattice from a liquid-like state characterized by spontaneous motion, creation and annihilation of polar bubbles at cryogenic temperatures. Finally, we show that the discovered quantum melting is associated with anomalous physical response, as, e.g., demonstrated by a negative longitudinal piezoelectric coefficient.

Nonlinear Hall effects have been previously investigated in noncentrosymmetric systems for electronic systems. However, they only exist in metallic systems and are not compatible with ferroelectrics since these latter are insulators, hence limiting their applications. On the other hand, ferroelectrics naturally break inversion symmetry and can induce a nonzero Berry curvature. Here, we show that a nonvolatile electric-field control of heat current can be realized in ferroelectrics through the nonlinear phonon Hall effects. More precisely, based on the Boltzmann equation under the relaxation-time approximation, we derive the equation for nonlinear phonon Hall effects, and further show that the behaviors of nonlinear Hall effects for phonons (that are bosons) are very different from nonlinear Hall effects for electrons (that are fermions). Our work therefore provides a route for electric-field control of thermal Hall current in ferroelectrics.

In this letter, we propose a mechanism to control the magnetic properties of topological quantum material (TQM) by using magnetoelectric coupling: this mechanism uses a heterostructure of TQM with two-dimensional (2D) ferroelectric material, which can dynamically control the magnetic order by changing the polarization of the ferroelectric material and induce possible topological phase transitions. This concept is demonstrated using the example of the bilayer MnBi₂Te₄ on ferroelectric In₂Se₃ or In₂Te₃, where the polarization direction of the 2D ferroelectrics determines the interfacial band alignment and consequently the direction of the charge transfer. This charge transfer, in turn, enhances the stability of the ferromagnetic state of MnBi₂Te₄ and leads to a possible topological phase transition between the quantum anomalous Hall (QAH) effect and the zero plateau QAH. Our work provides a route to dynamically alter the magnetic ordering of TQMs and could lead to the discovery of new multifunctional topological heterostructures.

Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T’ phase of transition metal dichalcogenides (MX ₂ , M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Our first principles calculations demonstrate that light can induce important transitions in the topological phases of this emerging materials family. For example, upon irradiation, Te-based MX ₂ undergoes a phase transition from quantum spin Hall (QSH) semimetal to time-reversal symmetry broken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the other hand, Se- and S-based MX ₂ undergoes the topological phase transition from the QSH effect to the quantum anomalous Hall effect and into trivial phases with increasing light intensity. From a general perspective, this theoretical work brings further insight into non-equilibrium topological systems.

Recent experiments identified Co₃Sn₂S₂as the first magnetic Weyl semimetal (MWSM). Using first-principles calculation with a global optimization approach, we explore the structural stabilities and topological electronic properties of cobalt (Co)-based shandite and alloys, Co₃MM’X₂(M/M’ = Ge, Sn, Pb, X = S, Se, Te), and identify stable structures with different Weyl phases. Using a tight-binding model, for the first time, we reveal that the physical origin of the nodal lines of a Co-based shandite structure is the interlayer coupling between Co atoms in different Kagome layers, while the number of Weyl points and their types are mainly governed by the interaction between Co and the metal atoms, Sn, Ge, and Pb. The Co₃SnPbS₂alloy exhibits two distinguished topological phases, depending on the relative positions of the Sn and Pb atoms: a three-dimensional quantum anomalous Hall metal, and a MWSM phase with anomalous Hall conductivity (~1290 Ω⁻¹ cm⁻¹) that is larger than that of Co₂Sn₂S₂. Our work reveals the physical mechanism of the origination of Weyl fermions in Co-based shandite structures and proposes topological quantum states with high thermal stability.

Two-dimensional (2D) topological insulators (TIs), also known as quantum spin Hall (QSH) insulators, are excellent candidates for coherent spin transport related applications because the edge states of 2D TIs are robust against nonmagnetic impurities since the only available backscattering channel is forbidden. Currently, most known 2D TIs are based on a hexagonal (specifically, honeycomb) lattice. Here, we propose that there exists the quantum spin Hall effect (QSHE) in a buckled square lattice. Through performing global structure optimization, we predict a new three-layer quasi-2D (Q2D) structure, which has the lowest energy among all structures with the thickness less than 6.0 Å for the BiF system. It is identified to be a Q2D TI with a large band gap (0.69 eV). The electronic states of the Q2D BiF system near the Fermi level are mainly contributed by the middle Bi square lattice, which are sandwiched by two inert BiF₂ layers. This is beneficial since the interaction between a substrate and the Q2D material may not change the topological properties of the system, as we demonstrate in the case of the NaF substrate. Finally, we come up with a new tight-binding model for a two-orbital system with the buckled square lattice to explain the low-energy physics of the Q2D BiF material. Our study not only predicts a QSH insulator for realistic room temperature applications but also provides a new lattice system for engineering topological states such as quantum anomalous Hall effect.