Kun Tang

1. Diamond, as an ultra-wide bandgap semiconductor, has superior performance in high voltage and high power, high-frequency switching, and high heat dissipation compared to other semiconductors [1]...

The effect of trace oxygen on the light-doping behavior of boron in diamond films during microwave plasma chemical vapor deposition was experimentally investigated. Boron-doped diamond films were grown continuously under different oxygen concentrations (O/C=0~5%). When oxygen was added during the diamond doping process, improvements in crystal quality and surface morphology were observed, and residual nitrogen was significantly suppressed. However, further increasing oxygen concentrations could lead to surface defects. We evaluated and discussed the carrier mobility, carrier concentration, and boron content of the samples. At room temperature, under the condition of O/C=4%, the maximum hole mobility reached 1400 cm²/V·s, and a higher carrier concentration of 1.5×10¹⁵ cm^-3 was obtained which is a very excellent result among all previous studies. In addition, the characteristic peaks that appeared in both low-temperature PL spectra and absorption spectra were analyzed, and it was explained that the characteristic peak at 4.7 eV (270 nm) may correspond to a boron-nitrogen complex, supplementing the effect of boron-doped diamond on defect formation. These findings demonstrated the potential of controlling the boron concentration in diamond films using oxygen concentration in a plasma environment and open avenues for future applications in advanced optoelectronic devices.

Today, agricultural irrigation consumes the largest amount of freshwater globally, while humans are threatened by water scarcity. To eliminate the trade-off between hunger and thirst, here, we show off-grid maritime agriculture based on a floating solar-driven agro-desalination wooden dome. In this dome, part of the visible light is transmitted for photosynthesis, and the remaining solar energy drives solar desalination, providing enough water (>4 mm day(-1)) for irrigation. Based on this water-food synergy, the stages of germination and growth are demonstrated. This technology can, to a large extent, support food security and sustainable agriculture and, in principle, be used to create self-circulation systems at sea to help humans survive weather extremes such as floods and droughts.

A novel design of the gas inlet system in a diamond microwave plasma chemical vapor deposition growth chamber has been reported in this paper. The design is targeting for high-quality, high-speed, and high-efficiency diamond material fabrication. By introducing a gas inlet hole into the susceptor, we expand the ways of gas introduction for diamond growth. After extensive numerical and experimental investigation, we have found that the introduction of methane and doping gas inlet from the hole of below while the hydrogen from the top is feasible for realizing the target. The growth and doping species could be confined around the substrate, making efficient usage of the precursors. The plasma state change caused by the difference of the gas inlet modes has been ascribed to the resulted gas distribution in the chamber. The measured growth rate has been increased to 32 μm h⁻¹, which is 16 times higher than traditional gas inlet configuration. Meanwhile, a large improvement of the nitrogen doping concentration has been achieved. Besides, with the increase of growth rate and nitrogen incorporation efficiency, the crystal quality and surface morphology keep in an acceptable degree. In this mode, the dual gas flow system can perfectly solve the contradiction among the crystal quality, growth rate, and doping efficiency, commonly existing during the material fabrication process, the chamber contamination could be significantly suppressed due to the constrained distribution of methyl and doping species, making the fabrication cost much lower. The results of repetitive experiments indicate that other residual impurities present in the chamber of microwave plasma chemical vapor deposition could likely regulate the threshold concentration of nitrogen required for accelerating the growth rate during the nitrogen doped diamond growth, which have a significant effect on the diamond growth.

This work investigates the suppression and compensation effect of oxygen on the behaviors and characteristics of heavily boron-doped microwave plasma chemical vapor deposition (MPCVD) diamond films. The suppression effect of oxygen on boron incorporation is observed by an improvement in crystal quality when oxygen is added during the diamond doping process. A relatively low hole concentration is expected and verified by Hall effect measurements due to the compensation effect of oxygen as a deep donor in diamond. A low acceptor concentration, high compensation donor concentration and relatively larger acceptor ionization energy are then induced by the incorporation of oxygen; however, a heavily boron-doped diamond film with high crystal quality can also be expected. The formation of an oxygen–boron complex structure instead of oxygen substitution, as indicated by the results of x-ray photoelectron spectroscopy, is suggested to be more responsible for the observed enhanced compensation effect due to its predicted low formation energy. Meanwhile, density functional theory calculations show that the boron–oxygen complex structure is easily formed in diamond with a formation energy of –0.83 eV. This work provides a comprehensive understanding of oxygen compensation in heavily boron-doped diamond.

Unintentional nitrogen incorporation has been observed in a set of microwave plasma chemical vapor deposition (MPCVD)-grown samples. No abnormality has been detected on the apparatus especially the base pressure and feeding gas purity. By a comprehensive investigation including the analysis of the plasma composition, we found that a minor leakage of the system could be significantly magnified by the thermal effect, resulting in a considerable residual nitrogen in the diamond material. Moreover, the doping mechanism of leaked air is different to pure nitrogen doping. The dosage of several ppm of pure nitrogen can lead to efficient nitrogen incorporation in diamond, while at least thousands ppm of leaked air is required for detecting obvious residual nitrogen. The difference of the dosage has been ascribed to the suppression effect of oxygen that consumes nitrogen. As the unintentional impurity is basically detrimental to the controllable fabrication of diamond for electronic application, we have provided an effective way to suppress the residual nitrogen in a slightly leaked system by modifying the susceptor geometry. This study indicates that even if a normal base pressure can be reached, the nitrogen residing in the chamber can be “activated” by the thermal effect and thus be incorporated in diamond material grown by a MPCVD reactor.