Shigeharu Ito

Intermediate-temperature solid oxide fuel cells (IT-SOFCs) have attracted attention due to their potential to overcome the trade-off between the performance and lifetime of SOFC devices. However, the guiding principle for effective material design, which can reduce operating temperatures and overcome performance decreases caused by excessive overpotential on the anode surface, has not been clearly established. In the present work, we studied the reported Schottky anomaly, which has been observed exclusively in yttria-stabilized zirconia (YSZ). To investigate this phenomenon, a small amount (less than 1200 ppm) of trivalent cations (Rh³⁺ or Fe³⁺), chemically similar to Y³⁺ in Y₂O₃, was doped onto the YSZ surface in the anode layer. Then, the current density observed from the SOFC device at 973 K was found to be nine-times higher than the SOFC device with an undoped anode. The surface first-principles calculations in the present work indicate that this performance enhancement is caused by the delocalized electrons induced by trivalent cation doping in the vicinity of the three-phase boundary and the promotion of surface oxygen diffusion in YSZ. Based on all experimental data, the effective material design guiding principle was obtained for utilizing the unique physical property of YSZ for applications such as IT-SOFCs.

To develop the state‐of‐the‐art polymer membrane fuel cells. Both maximization of oxygen reduction reaction (ORR) activity on Pt cathode and minimization of Pt content in the cathode are required. For this challenge, the defect interface on oxide support was modified by proton beam irradiation method. Pt‐CeO _x nanowire/C (Pt/C = 0.02) was fabricated using the proton beam irradiation method. Since the radical density generated by proton beam irradiation is two orders of magnitude greater than that of electron beam irradiation, the CeO _x nanowire surface was fully converted to a thin layer of Pt‐O‐Ce bonds under proton beam irradiation. The ORR activity observed for fabricated sample with above active surface layer was higher than that of conventional Pt/C (Pt/C = 0.2) and comparable to that of Pt‐CeO _x nanowire/C (Pt/C = 0.2) fabricated by conventional methods. From the combination of microanalysis characterization and surface atomistic simulation, we concluded that the Pt‐O‐Ce bond was formed on defect‐rich regions of the CeO _x nanowire and this leads to a maximized ORR activity on the fabricated sample. Based on all experimental data, it is concluded that the surface modification of CeO _x nanowire support using proton beam irradiation is useful for a lowering the Pt content of the cathode with high ORR activity.

In recent years, the lowering of the operation temperature of solid oxide fuel cells (SOFCs) has attracted much attention owing to the trade‐off between the best performance and the life span of SOFCs. For this challenge, new active sites on the Ni surfaces in a Nickel–Yttria‐Stabilized Zirconia (Ni‐YSZ) cermet anode of SOFCs have been created by deposition of trace amounts of platinum oxide (PtO_x) followed by an activation step of the anode at 1073 K in a hydrogen flow. The internal resistance (IR) free value (185 mA cm⁻² at 0.8 V) observed for the single cell with an anode sputtered with a trace amount of PtO_x (Pt content in anode: from 9 to 91 ppm) at 973 K is conspicuously higher than that of a similar single cell with a nonsputtered cermet anode (85 mA cm⁻²) at 0.8 V and 1073 K. Transmission electron microscopy microanalysis shows that the defect structure is formed on a partially oxidized Ni surface by active Pt species. Also, surface atomistic simulation on NiO (111) predicts the formation of Frenkel defect clusters with Pt cations, which partially cover the Ni surface. The formation of Frenkel defect clusters on the partially oxidized Ni surface (i.e., creation of new active sites for formation of water molecules) promotes the anode reaction, resulting in improvements in the anode performance of SOFC single cells at 973 K. Design of the aforementioned new active sites on Ni through sputtering of trace amounts of PtO_x provides a great opportunity for “radical innovation” in the design of intermediate‐temperature SOFCs.

The present work presented a design paradigm for synthesis of Ba₂In₂O₅based materials with both high electrical conductivity and small volume change which are important factors for solid-state device applications.