Leonard C. Feldman

Micro- or nano-diodes suspended in water can propel controllably under alternating-current fields or light without the need for fuels such as hydrogen peroxide or urea. This makes them promising candidates for miniature motors in biomedical and other applications. However, the mechanisms underlying their propulsion remain unclear. This study investigates the propulsion of diodes floating in an aqueous solution at the millimeter scale, which facilitates observation of motion, allowing direct correlation with electrical measurements of device properties. We find that the diode’s propulsion is driven by forward current under an alternating-current field and by photocurrent under illumination. The velocity of propulsion scales linearly with the net current, with the rectified or photogenerated current creating an imbalance of ions at the ends of the diodes. This, in turn, generates an electric field that induces electrophoretic flow around the diode and propels the diode. Additionally, we assess the velocity of diodes intentionally damaged by high reverse bias and find that it decreases significantly because of the reduced difference between forward and reverse currents. These results suggest potential uses of diode propulsion for characterizing and separating bottom-up-grown nano-/micro- diodes based on their reverse-saturation current, as well as nanomotors formed from multiple-junction nanowire diodes that can self-propel in water under light.

Solution-processed light-emitting diodes based on non-toxic copper–iodide hybrids¹ are a compelling solution for efficient and stable deep-blue lighting, owing to their tunability, high photoluminescence efficiency and environmental sustainability². Here we present a hybrid copper–iodide that shows near-unity photoluminescence quantum yield (99.6%) with an emission wavelength of 449 nm and colour coordinates (0.147, 0.087), alongside its emission mechanism and charge transport characteristics. We use the thin film of this hybrid as the sole active emissive layer to fabricate deep-blue light-emitting diodes and subsequently enhance the device performance through a dual interfacial hydrogen-bond passivation strategy. This synergetic surface modification approach, integrating a hydrogen-bond-acceptor self-assembled monolayer with an ultrathin polymethyl methacrylate capping layer, effectively passivates both heterojunctions of the copper–iodide hybrid emissive layer and optimizes charge injections. We achieve a maximum external quantum efficiency of 12.57%, a maximum luminance of 3,970.30 cd m⁻² with colour coordinates (0.147, 0.091) and an excellent operational stability (half-lifetime) of 204 hours under ambient conditions. We further showcase a large-area device of 4 cm² that maintains high efficiency. Our findings reveal the potential of copper–iodide-based hybrid materials for applications in solid-state lighting³ and display technologies⁴, offering a versatile strategy for enhancing device performances.

We report observations of crystal defect induced modifications in the laser-excited Er3+ photoluminescence spectra of single-crystal Er2O3 thin films. These include marked enhancement of transition intensities known to be weak or nonexistent in as-grown samples. In this Letter, we examine the temperature and defect density dependence of the measurements and suggest photophysical processes that may account for these unexpected results.

A helium ion microscope (HIM) with a focused He⁺-ion beam of variable flux and energy can be used as a tool for local nanoscale surface modification. In this work, we demonstrate a simple but versatile use of the HIM focused He ion beam to fabricate conducting metallic nano- and microstructures on arbitrary substrates of varied types and shapes by directly patterning pre-deposited initially discontinuous and highly insulating (>10 TΩ/sq.) ultrathin metal films. Gold or silver films, measuring 3 nm in thickness, thermally evaporated on solid substrates have a discontinuous nanocluster morphology. Such highly resistive films can be made locally conductive using moderate doses (2 × 10¹⁶–10¹⁷ cm⁻²) of low-energy (30 KeV) ion bombardment. We show that an HIM can be used to directly “draw” Au and Ag conductive lines and other patterns with a variable sheet resistance as low as 10 kΩ/sq. without the use of additional precursors. This relatively straightforward, high-definition technique of direct writing with an ion beam, free from complex in vacuo catalytic or precursor chemistries, opens up new opportunities for directly fabricating elements of conformal metallic nanocircuits (interconnects, resistors, and contacts) on arbitrary organic or inorganic substrates, including those with highly curved surfaces.

Hybrid superconductor–semiconductor materials systems are promising candidates for quantum computing applications. Their integration into superconducting electronics has enabled on-demand voltage tunability at millikelvin temperatures. Ge quantum wells have been among the semiconducting platforms interfaced with superconducting Al to realize voltage tunable Josephson junctions. Here, we explore Nb as a superconducting material in direct contact with Ge channels by focusing on the solid-state reactions at the Nb/Ge interfaces. We employ Nb evaporation at cryogenic temperatures (∼100 K) to establish a baseline structure with atomically and chemically abrupt Nb/Ge interfaces. By conducting systematic photoelectron spectroscopy and transport measurements on Nb/Ge samples across varying annealing temperatures, we elucidated the influence of Ge out-diffusion on the ultimate performance of superconducting electronics. This study underlines the need for low-temperature growth to minimize chemical intermixing and band bending at the Nb/Ge interfaces.

Solution-processed light-emitting diodes based on non-toxic copper–iodide hybrids are a compelling solution for efficient and stable deep-blue lighting, attributed to their tunability, high photoluminescence efficiency, and environmental sustainability. Here we present a new hybrid copper iodide that exhibits near-unity photoluminescence quantum yield (99.4 ± 0.4%) with an emission wavelength of 449 nm and color coordinates (0.147, 0.087), alongside its emission mechanism and charge transport characteristics. We use the thin film of this hybrid as the sole active emissive layer (EML) to fabricate deep-blue LEDs and subsequently enhance the device performance via a unique dual interfacial hydrogen bond passivation strategy. This synergetic surface modification approach, integrating a new H-bond donor self-assembled monolayer with an ultra-thin PMMA capping layer, effectively passivates both heterojunctions of the copper–iodide hybrid EML and optimizes charge injections. We achieve a maximum external quantum efficiency of 12.57%, maximum luminance of 3970.30 cd m⁻² with color coordinates (0.147, 0.091), and an excellent operational stability (T₅₀) of 204 hours under ambient conditions. We further showcase a large-area device of 4 cm² that maintains high efficiency. Our findings reveal the potential of copper iodide-based hybrid materials for applications in solid-state lighting and display technologies, offering a versatile strategy for enhancing device performances.

Characterization of the atomic level processes that determine optical transitions in emerging materials is critical to the development of new platforms for classical and quantum networking. Such understanding often emerges from studies of the temperature dependence of the transitions. We report measurements of the temperature dependent Er³⁺ photoluminescence in single crystal Er₂O₃ thin films epitaxially grown on Si(111) focused on transitions that involve the closely spaced Stark-split levels. Radiative intensities are compared to a model that includes relevant Stark-split states, single phonon-assisted excitations, and the well-established level population redistribution due to thermalization. This approach, applied to the individual Stark-split states and employing Er₂O₃ specific single-phonon-assisted excitations, gives good agreement with experiment. This model allows us to demonstrate the difference in the electron-phonon coupling of the ⁴S_3/2 and ²H_11/2 states of Er³⁺ in E₂O₃ and suggests that the temperature dependence of Er³⁺ emission intensity may vary significantly with small shifts in the wavelength (~0.1 nm) of the excitation source.

Doped semiconductor nanowires are emerging as next-generation electronic colloidal materials, and the efficient manipulation of such nanostructures is crucial for technological applications. In fluid suspension, pn nanowires (pn NWs), unlike homogeneous nanowires, have a permanent dipole, and thus, experience a torque under an external DC field that orients the nanowire with its n-type end in the direction of the field. Here, we quantitatively measure the permanent dipoles of various Si nanowire pn diodes and investigate their origin. By comparing the dipoles of pn NWs of different lengths and radii, we show that the permanent dipole originates from non-uniform surface-charge distributions, rather than the internal charges at the p–n junction as was previously proposed. This understanding of the mechanism for pn NWs orientation has relevance to the manipulation, assembly, characterization, and separation of nanowire electronics by electric fields.

We report an N2 based annealing treatment to passivate interface traps (Dit) in n- and p-type 4H-SiC. The process has the potential to replace the commonly used hazardous and expensive gas nitric oxide (NO). N2 postoxidation annealing reduces Dit in both the upper and lower halves of the 4H-SiC bandgap, with a greater impact at the valence band edge. N2 annealing at 1500 °C is observed to be more effective in passivating traps and positive fixed charges than NO annealing for p-type devices, whereas for n-type devices, the opposite is true. The breakdown voltages for these devices are found to be lower than that of NO annealed devices. X-ray photoelectron spectroscopy has been performed to estimate the nitrogen areal density at the interface. Dit is measured as a function of nitrogen areal densities in the near interfacial regions for the different processes. Theoretical analysis through density functional theory is consistent with the measured Dit profiles by showing the generation of additional states near the valence band edge due to increased nitrogen concentration. In addition to reporting the effect of N2 annealing on both n- and p-type 4H-SiC, this work correlates the nitrogen areal densities at the interface to the Dit and explains the difference in Dit characteristics with nitrogen areal density between n- and p-type interfaces.