Yu-Ping Sun
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
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Research Interests
Yu-Ping Sun has a total of 882 co-authors. Here are the top co-authors by number of shared publications:
W. H. Song
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
111 shared publicationsX. B. Zhu
Institute of Solid State Physics
73 shared publications- Xuan Luo
Institute of Solid State Physics
65 shared publications - Wen-Jian Lu
Institute of Solid State Physics
61 shared publications - Xuebin Zhu
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences 1 , Hefei 230031
50 shared publications P. Tong
Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
46 shared publications
Latest Publications
- Open Access
- 11 November 2026
- Published by Springer Nature in Research Square
Colossal liquid-state barocaloric Effect
Vapor-compression refrigeration, though ubiquitous, relies on gaseous refrigerants with substantial climate footprints. Solid-state caloric (SSC) cooling offers a green alternative, yet its performance is constrained by field hysteresis and parasitic losses from secondary‑fluid heat exchange. Here we demonstrate the liquid-state barocaloric effect in molecular liquids, achieving isothermal entropy changes of 230 J·kg -1 K -1 and adiabatic temperature changes of 32 K. Without requiring a liquid-solid transition, the liquid-state BC effect is robust over a temperature span exceeding 100 K. Together with the colossal entropy change, this leads to a relative cooling power three times that of SSC materials. Crucially, the liquid serves simultaneously as refrigerant, heat-transfer medium, and pressure-transmitting fluid, eliminating interfacial thermal resistance and enabling a Carnot-like cycle with a coefficient of performance far surpassing that of SSC systems. Molecular dynamics simulations and quasi-elastic neutron scattering reveal that the colossal thermal response originates from pressure-suppressed translational and rotational molecular motions, primarily governed by molecular polarity and intermolecular interactions. Our work establishes liquid-state barocaloric cooling as a sustainable paradigm that circumvents the longstanding efficiency bottlenecks of SSC refrigeration.
- 11 November 2026
- Published by Springer Nature in Research Square
Open AccessColossal liquid-state barocaloric Effect
Vapor-compression refrigeration, though ubiquitous, relies on gaseous refrigerants with substantial climate footprints. Solid-state caloric (SSC) cooling offers a green alternative, yet its performance is constrained by field hysteresis and parasitic losses from secondary‑fluid heat exchange. Here we demonstrate the liquid-state barocaloric effect in molecular liquids, achieving isothermal entropy changes of 230 J·kg -1 K -1 and adiabatic temperature changes of 32 K. Without requiring a liquid-solid transition, the liquid-state BC effect is robust over a temperature span exceeding 100 K. Together with the colossal entropy change, this leads to a relative cooling power three times that of SSC materials. Crucially, the liquid serves simultaneously as refrigerant, heat-transfer medium, and pressure-transmitting fluid, eliminating interfacial thermal resistance and enabling a Carnot-like cycle with a coefficient of performance far surpassing that of SSC systems. Molecular dynamics simulations and quasi-elastic neutron scattering reveal that the colossal thermal response originates from pressure-suppressed translational and rotational molecular motions, primarily governed by molecular polarity and intermolecular interactions. Our work establishes liquid-state barocaloric cooling as a sustainable paradigm that circumvents the longstanding efficiency bottlenecks of SSC refrigeration.
- 30 October 2026
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 109 (11)
Nd 3+ ‐Modified KNN‐Based Ceramics With Coupled Optical and Piezoelectric Properties
Transparent lead‐free piezoelectric ceramics are promising for multifunctional optoelectronic devices. However, the simultaneous realization of high optical transparency, piezoelectricity, and light‐tunable luminescence remains challenging. In this study, Nd 3+ ‐modified 0.94(K 0.5 Na 0.5 ) 1−3 x Nd x NbO 3 –0.06Sr(Zn 1/3 Nb 2/3 )O 3 ceramics were designed to regulate phase structure, microstructure, defect chemistry, and optical−electrical coupling. Nd 3+ doping has shown to drive the structural evolution from a tetragonal‐dominated phase toward a tetragonal and cubic coexist phase, while regulating grain growth and enhancing densification. The optimized composition with x = 0.01 exhibits a high relative density of 99.7%, refined grains, an optical transmittance of 67.26% at 780 nm, and an enlarged optical bandgap of 3.02 eV. Meanwhile, characteristic Nd 3+ upconversion emissions are observed under 808 nm excitation, and both transmittance and upconversion photoluminescence can be modulated by 365 nm light irradiation. This photochromic‐induced luminescence quenching is attributed to the presence of light‐triggered color centers, which are often associated with various types of defects including alkali vacancies, oxygen vacancies, and dopant‐related defects. Benefiting from the balanced pseudo‐cubic structure, dense microstructure, enhanced dielectric response, and retained ferroelectric polarization, the x = 0.01 ceramic achieves a maximum piezoelectric coefficient of 136 pC/N. This work provides an effective strategy for integrating transparency, piezoelectricity, upconversion photoluminescence, and photochromic modulation in lead‐free KNN‐based ceramics.
- 30 October 2026
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 109 (11)
Nd 3+ ‐Modified KNN‐Based Ceramics With Coupled Optical and Piezoelectric Properties
Transparent lead‐free piezoelectric ceramics are promising for multifunctional optoelectronic devices. However, the simultaneous realization of high optical transparency, piezoelectricity, and light‐tunable luminescence remains challenging. In this study, Nd 3+ ‐modified 0.94(K 0.5 Na 0.5 ) 1−3 x Nd x NbO 3 –0.06Sr(Zn 1/3 Nb 2/3 )O 3 ceramics were designed to regulate phase structure, microstructure, defect chemistry, and optical−electrical coupling. Nd 3+ doping has shown to drive the structural evolution from a tetragonal‐dominated phase toward a tetragonal and cubic coexist phase, while regulating grain growth and enhancing densification. The optimized composition with x = 0.01 exhibits a high relative density of 99.7%, refined grains, an optical transmittance of 67.26% at 780 nm, and an enlarged optical bandgap of 3.02 eV. Meanwhile, characteristic Nd 3+ upconversion emissions are observed under 808 nm excitation, and both transmittance and upconversion photoluminescence can be modulated by 365 nm light irradiation. This photochromic‐induced luminescence quenching is attributed to the presence of light‐triggered color centers, which are often associated with various types of defects including alkali vacancies, oxygen vacancies, and dopant‐related defects. Benefiting from the balanced pseudo‐cubic structure, dense microstructure, enhanced dielectric response, and retained ferroelectric polarization, the x = 0.01 ceramic achieves a maximum piezoelectric coefficient of 136 pC/N. This work provides an effective strategy for integrating transparency, piezoelectricity, upconversion photoluminescence, and photochromic modulation in lead‐free KNN‐based ceramics.
- 21 September 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 129 (12)
Synergistic effects for improving electromagnetic wave absorption in high-entropy MXene heterostructures
Two-dimensional (2D) MXenes possess advantages for electromagnetic wave absorption owing to high electrical conductivity, abundant surface functional groups, and defects, but their excessive conductivity often causes impedance mismatch. High-entropy (HE) engineering can reduce the conductivity of MXenes and thereby improve impedance matching, while the conductivity loss will also decrease. Here, NiCo2S4 (NCS) with relatively high electrical conductivity was coupled with HE MXene (Ti1/4V1/4Cr1/4Mo1/4)3C2Tx (HEM) to balance dielectric attenuation and impedance matching. The NCS/HEM achieves an optimal minimum reflection loss of −57.2 dB (thickness of 1.31 mm) and an optimal effective absorption bandwidth of 4.2 GHz (13.6–17.8 GHz, thickness of 1.4 mm). The enhanced electromagnetic wave absorption performance originates from the synergistic effects of optimized impedance matching, improved dielectric attenuation, and facilitated multiple reflections and scattering from heterostructures. This work provides a feasible strategy for designing high-performance MXene-based absorbers through synergistic effects by constructing heterostructures.
- 21 September 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 129 (12)
Synergistic effects for improving electromagnetic wave absorption in high-entropy MXene heterostructures
Two-dimensional (2D) MXenes possess advantages for electromagnetic wave absorption owing to high electrical conductivity, abundant surface functional groups, and defects, but their excessive conductivity often causes impedance mismatch. High-entropy (HE) engineering can reduce the conductivity of MXenes and thereby improve impedance matching, while the conductivity loss will also decrease. Here, NiCo2S4 (NCS) with relatively high electrical conductivity was coupled with HE MXene (Ti1/4V1/4Cr1/4Mo1/4)3C2Tx (HEM) to balance dielectric attenuation and impedance matching. The NCS/HEM achieves an optimal minimum reflection loss of −57.2 dB (thickness of 1.31 mm) and an optimal effective absorption bandwidth of 4.2 GHz (13.6–17.8 GHz, thickness of 1.4 mm). The enhanced electromagnetic wave absorption performance originates from the synergistic effects of optimized impedance matching, improved dielectric attenuation, and facilitated multiple reflections and scattering from heterostructures. This work provides a feasible strategy for designing high-performance MXene-based absorbers through synergistic effects by constructing heterostructures.
- 4 September 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (18)
Incipient ferroelectric behavior and structural phase transitions in two-dimensional layered TlGaS 2
- 4 September 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (18)
Incipient ferroelectric behavior and structural phase transitions in two-dimensional layered TlGaS 2
- 5 August 2026
- Published by Springer Nature in Journal of Superconductivity and Novel Magnetism
- Vol. 39 (4) , 130
Topological Hall Behaviour Detected in Frustrated Shastry-Sutherland Magnet $\text {HoB}_4$- 5 August 2026
- Published by Springer Nature in Journal of Superconductivity and Novel Magnetism
- Vol. 39 (4) , 130
Topological Hall Behaviour Detected in Frustrated Shastry-Sutherland Magnet $\text {HoB}_4$- 7 July 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (6) , 065109
Origin of the anomalous Hall effect in a disordered ferromagnetic Ho 1.25 Au 0.75 Si 1.55 single crystal
The anomalous Hall effect (AHE) serves as a pivotal transport phenomenon for deciphering the interplay between magnetic spin textures and topological bands in magnetic materials, with its origin attributed to intrinsic (momentum-space Berry curvature linked to Weyl or Dirac point) and extrinsic (spin-dependent scattering, i.e., skew scattering and side-jump) mechanisms. The complex magnetic structure and strong spin-orbit coupling effect of rare-earth magnetic materials make them an important platform for studying AHE. Here, we report a disordered ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ single crystal and investigate its magnetic and transport properties. In this single crystal, Ho-Au mixed occupancy on the $2c$ site and vacancies on the Si $2b$ sublattice give rise to pronounced chemical disorder. ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ belongs to the rare-earth ferromagnetic material with a magnetic ordering temperature of 8 K ( ${T}_{c}$ ) and easy magnetization along the $c$ axis. The magnetoresistance (MR) of ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ exhibits different behaviors at high and low temperatures in the $H\ensuremath{\parallel}ab$ and $I\ensuremath{\parallel}c$ configurations. At 3 K ($T\phantom{\rule{4pt}{0ex}}<\phantom{\rule{4pt}{0ex}}{T}_{c}$), the MR is initially positive and becomes negative with the magnetic field further increasing. This is due to the gradual disappearance of magnetic domain-wall scattering as the magnetization process approaches saturation. At 100 K ($T\phantom{\rule{4pt}{0ex}}>\phantom{\rule{4pt}{0ex}}{T}_{c}$), the MR remains negative as a result of the suppression of the scattering from spin fluctuations. With regard to the AHE, considering the scaling behavior between the anomalous Hall resistivity ${\ensuremath{\rho}}_{xz}^{A}$ and the longitudinal resistivity ${\ensuremath{\rho}}_{zz}$, the origin of the AHE in ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ can be described by the skew scattering mechanism. The dominance of skew scattering is likely driven by the structural disorder present in ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$: the Ho-Au mixed occupancy and Si vacancies create a random potential landscape and break local chemical periodicity, which are expected to enhance asymmetric carrier scattering. The anomalous Hall angle \ensuremath{\Theta}${}_{AH}$ and anomalous Hall factor ${S}_{H}$ of ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ are 0.49% and 0.03 ${\mathrm{V}}^{\ensuremath{-}1}$, respectively, at 3 K, and both decrease as the temperature rises. The small \ensuremath{\Theta}${}_{AH}$ and ${S}_{H}$ are attributed to the finite $s\text{\ensuremath{-}}f$ exchange coupling in this $4f$ localized-moment ferromagnet and to the enhanced scattering environment associated with Ho-Au mixed occupancy and Si vacancies. This work establishes disordered ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ as a platform for studying the role of structural disorder in skew-scatter-dominated AHE in rare-earth localized-moment ferromagnets.- 7 July 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (6) , 065109
Origin of the anomalous Hall effect in a disordered ferromagnetic Ho 1.25 Au 0.75 Si 1.55 single crystal
The anomalous Hall effect (AHE) serves as a pivotal transport phenomenon for deciphering the interplay between magnetic spin textures and topological bands in magnetic materials, with its origin attributed to intrinsic (momentum-space Berry curvature linked to Weyl or Dirac point) and extrinsic (spin-dependent scattering, i.e., skew scattering and side-jump) mechanisms. The complex magnetic structure and strong spin-orbit coupling effect of rare-earth magnetic materials make them an important platform for studying AHE. Here, we report a disordered ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ single crystal and investigate its magnetic and transport properties. In this single crystal, Ho-Au mixed occupancy on the $2c$ site and vacancies on the Si $2b$ sublattice give rise to pronounced chemical disorder. ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ belongs to the rare-earth ferromagnetic material with a magnetic ordering temperature of 8 K ( ${T}_{c}$ ) and easy magnetization along the $c$ axis. The magnetoresistance (MR) of ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ exhibits different behaviors at high and low temperatures in the $H\ensuremath{\parallel}ab$ and $I\ensuremath{\parallel}c$ configurations. At 3 K ($T\phantom{\rule{4pt}{0ex}}<\phantom{\rule{4pt}{0ex}}{T}_{c}$), the MR is initially positive and becomes negative with the magnetic field further increasing. This is due to the gradual disappearance of magnetic domain-wall scattering as the magnetization process approaches saturation. At 100 K ($T\phantom{\rule{4pt}{0ex}}>\phantom{\rule{4pt}{0ex}}{T}_{c}$), the MR remains negative as a result of the suppression of the scattering from spin fluctuations. With regard to the AHE, considering the scaling behavior between the anomalous Hall resistivity ${\ensuremath{\rho}}_{xz}^{A}$ and the longitudinal resistivity ${\ensuremath{\rho}}_{zz}$, the origin of the AHE in ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ can be described by the skew scattering mechanism. The dominance of skew scattering is likely driven by the structural disorder present in ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$: the Ho-Au mixed occupancy and Si vacancies create a random potential landscape and break local chemical periodicity, which are expected to enhance asymmetric carrier scattering. The anomalous Hall angle \ensuremath{\Theta}${}_{AH}$ and anomalous Hall factor ${S}_{H}$ of ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ are 0.49% and 0.03 ${\mathrm{V}}^{\ensuremath{-}1}$, respectively, at 3 K, and both decrease as the temperature rises. The small \ensuremath{\Theta}${}_{AH}$ and ${S}_{H}$ are attributed to the finite $s\text{\ensuremath{-}}f$ exchange coupling in this $4f$ localized-moment ferromagnet and to the enhanced scattering environment associated with Ho-Au mixed occupancy and Si vacancies. This work establishes disordered ${\mathrm{Ho}}_{1.25}{\mathrm{Au}}_{0.75}{\mathrm{Si}}_{1.55}$ as a platform for studying the role of structural disorder in skew-scatter-dominated AHE in rare-earth localized-moment ferromagnets.- 5 June 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (24)
Anomalies in the thermal conductivity of the honeycomb antiferromagnet MnPS 3
- 5 June 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (24)
Anomalies in the thermal conductivity of the honeycomb antiferromagnet MnPS 3
- 22 May 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 139 (20)
Stabilizing low-loss pyrochlore phase for high-efficiency energy storage
Bismuth-based pyrochlore phases, as linear dielectrics, offer a compelling combination of ultralow loss, moderate permittivity, and high breakdown strength, rendering them promising for dielectric energy storage applications. However, the advancement of related research is impeded by the inherent thermodynamic instability in the Bi2O3–TiO2 phase diagram, which makes the synthesis of phase-pure Bi2Ti2O7 particularly challenging. In this work, we demonstrate that the stability of Bi2Ti2O7-based phase is significantly enhanced through careful control of the thermal processing temperature. The resulting materials, therefore, show ultralow dielectric loss and reduced polarization switching hysteresis as well as improved breakdown field. Consequently, a high energy density of 65.5 J/cm3 and an excellent energy efficiency of 84.3% are achieved concurrently. The findings reported herein help to elucidate the relationship between pyrochlore structure stabilization and thermal treat process, thereby providing an effective way for improving the energy storage performance of Bi2Ti2O7-based thin films.
- 22 May 2026
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 139 (20)
Stabilizing low-loss pyrochlore phase for high-efficiency energy storage
Bismuth-based pyrochlore phases, as linear dielectrics, offer a compelling combination of ultralow loss, moderate permittivity, and high breakdown strength, rendering them promising for dielectric energy storage applications. However, the advancement of related research is impeded by the inherent thermodynamic instability in the Bi2O3–TiO2 phase diagram, which makes the synthesis of phase-pure Bi2Ti2O7 particularly challenging. In this work, we demonstrate that the stability of Bi2Ti2O7-based phase is significantly enhanced through careful control of the thermal processing temperature. The resulting materials, therefore, show ultralow dielectric loss and reduced polarization switching hysteresis as well as improved breakdown field. Consequently, a high energy density of 65.5 J/cm3 and an excellent energy efficiency of 84.3% are achieved concurrently. The findings reported herein help to elucidate the relationship between pyrochlore structure stabilization and thermal treat process, thereby providing an effective way for improving the energy storage performance of Bi2Ti2O7-based thin films.
- 27 April 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 128 (17)
Enhanced energy storage of BaBi4Ti4O15 thin films via non-stoichiometric Ti-excess design
High energy density and high efficiency have long been the pursuit in the development of dielectric capacitors. In this work, energy density and efficiency are synergistically improved by non-stoichiometric Ti-excess design in BaBi4Ti4O15 thin films. On the one hand, excessive Ti promotes grain refinement and the formation of an amorphous phase, significantly inhibits leakage current, and enhances the breakdown field strength. On the other hand, relatively high polarization can be maintained despite the introduction of an amorphous phase by excessive Ti. Ultimately, a high energy density of 135.8 J cm−3, a high efficiency of 90.7%, and a remarkable energy storage figure of merit of 1460 J cm−3 were achieved in BaBi4Ti4.2Mn0.05O15 thin film. The thin film exhibits excellent stability and reliability regarding frequency (0.8–50 kHz) and temperature (20–230 °C), as well as cycling (106) performances. These results demonstrate that Ti-excess designed BaBi4Ti4O15 lead-free thin films are promising candidates for high-performance dielectric capacitor applications.
- 27 April 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 128 (17)
Enhanced energy storage of BaBi4Ti4O15 thin films via non-stoichiometric Ti-excess design
High energy density and high efficiency have long been the pursuit in the development of dielectric capacitors. In this work, energy density and efficiency are synergistically improved by non-stoichiometric Ti-excess design in BaBi4Ti4O15 thin films. On the one hand, excessive Ti promotes grain refinement and the formation of an amorphous phase, significantly inhibits leakage current, and enhances the breakdown field strength. On the other hand, relatively high polarization can be maintained despite the introduction of an amorphous phase by excessive Ti. Ultimately, a high energy density of 135.8 J cm−3, a high efficiency of 90.7%, and a remarkable energy storage figure of merit of 1460 J cm−3 were achieved in BaBi4Ti4.2Mn0.05O15 thin film. The thin film exhibits excellent stability and reliability regarding frequency (0.8–50 kHz) and temperature (20–230 °C), as well as cycling (106) performances. These results demonstrate that Ti-excess designed BaBi4Ti4O15 lead-free thin films are promising candidates for high-performance dielectric capacitor applications.