Jasmin Spettel

Thin film aluminum nitride (AlN) stands out as a promising material for integrated photonics due to its wide bandgap of 6.1 eV, facilitating efficient operation across diverse spectral ranges. Its inherent electro-optic and nonlinear optical properties make it exceptionally well suited for active photonic components. Compatibility with CMOS technology further strengthens its appeal. Doping AlN with scandium (Sc) in non-centrosymmetric configurations significantly enhances its nonlinear and piezoelectric characteristics. This study explores Al(Sc)N thin films on silicon dioxide (SiO₂), investigating optical properties in a broad wavelength range from 0.19 µm to 25 µm. Comprehensive material analysis of sputtered Al(Sc)N films and fabrication techniques for AlN integrated photonic devices demonstrated here highlight AlScN's potential in integrated photonic applications.

Thin film aluminum nitride on insulator (AlNOI) has gained attention as a promising material platform for integrated photonic circuits (PICs) due to its ability to operate over a wide spectral range covering the ultra-violet to mid-infrared regions, while enabling a broad range of passive photonic functionalities. This study aims to optimize sputtered AlNOI films for PICs, with an emphasis on the spectroscopic ellipsometry study over a range from 0.19 µm to 25 µm. Furthermore, we discuss our approach for fabricating AlNOI PICs components, with a particular focus on optimizing the etching process to attain smooth sidewall waveguides.

In this work, we investigated the optimization of a plasmonic slot waveguide (PSWG) in the mid-IR region particularly for a representative wavelength of 4.26 µm, which is the absorption line of CO₂ and thus particularly relevant for applications. We analysed the mode features associated with metal-dielectric-metal (MDM), dielectric-metal-dielectric (DMD), and truncated metal film (TMF) structures with respect to the considered PSWG. Subsequently, the mode features of the PSWG were considered based on what we outlined for MDM, DMD, and TMF structures. Furthermore, as confinement factor and propagation length are two crucial parameters for absorption sensing applications, we optimized the PSWG based on a figure of merit (FOM) defined as the product of the aforementioned quantities. To characterize the propagation length, the imaginary part of the effective mode index of a guided mode was considered, leading to a dimensionless FOM. Finally, we investigated the PSWG also for other wavelengths and identified particularly attractive wavelengths and geometries maximizing the FOM.

In this work, we present and analyze a design of an absorber–waveguide system combining a highly sensitive waveguide array concept with a resonant selective absorber. The waveguide part is composed of an array of coupled strip waveguides and is therefore called a coupled strip array (CSA). The CSA is then coupled to the end of a slab Tamm plasmon (STP-) resonator, which is composed of a quasicrystal-like reflector formed by the patterning of a silicon slab and an interfacing tungsten slab. The concept describes an emitter–waveguide or waveguide–detector system featuring selective plasmon-enhanced resonant absorption or emission. These are crucial properties for corresponding optical on-chip integrated devices in context with evanescent field absorption sensing in fluids or gases, for example. Thus, the concept comprises a valuable and more cost-effective alternative to quantum cascade lasers. We designed the lateral dimensions of the STP resonator via a simple quasi-crystal approach and achieved strong narrowband resonances (emittance and Q-factors up to 85% and 88, respectively) for different silicon thicknesses and substrate materials (air and silicon oxide). Moreover, we analyze and discuss the sensitivity of the complete emitter–waveguide system in dependence on the slab thickness. This reveals the crucial correlation between the expected sensitivity assigned to the absorber–waveguide system and field confinement within the silicon.

Optical measurement approaches have proven to provide intrinsic selectivity and the sensitivity, required for the development of integrated gas sensors. In an ongoing project, we work towards a Si-photonics non-dispersive infrared gas sensor and are investigating the possibility of the incorporation of IR-plasmonic materials, which could allow an increase in sensitivities and reduce the size of such sensors. Here we present the basic concept and discuss in some detail first results concerning fabrication and characterization of the plasmonic properties.

Plasmonic slot waveguides have attracted much attention due to the possibility of high light confinement, although they suffer from relatively high propagation loss originating from the presence of a metal. Although the tightly confined light in a small gap leads to a high confinement factor, which is crucial for sensing applications, the use of plasmonic guiding at the same time results in a low propagation length. Therefore, the consideration of a trade-off between the confinement factor and the propagation length is essential to optimize the waveguide geometries. Using silicon nitride as a platform as one of the most common material systems, we have investigated free-standing and asymmetric gold-based plasmonic slot waveguides designed for sensing applications. A new figure of merit (FOM) is introduced to optimize the waveguide geometries for a wavelength of 4.26 µm corresponding to the absorption peak of CO₂, aiming at the enhancement of the confinement factor and propagation length simultaneously. For the free-standing structure, the achieved FOM is 274.6 corresponding to approximately 42% and 868 µm for confinement factor and propagation length, respectively. The FOM for the asymmetric structure shows a value of 70.1 which corresponds to 36% and 264 µm for confinement factor and propagation length, respectively.

The field of mid-infrared (MIR) plasmonics has shown great potential applications in spectroscopic sensing, infrared light sources and detectors. MIR plasmonic materials that are compatible with common fabrication processes may enable cost-effective and reliable plasmonic device platforms. In this work, we examined aluminium metal (Al), gold-tin (AuSn) and titanium-tungsten (TiW) alloys regarding their usability for surface plasmon polariton (SPP) excitation in the MIR regime using a grating configuration. The angle dependence and the influence of varying depths of gratings were numerically and experimentally studied for the chosen materials. The structures were fabricated on eight-inch silicon (Si) substrates and characterized with a free-beam reflection measurement setup in the MIR regime. The fabricated gratings show narrow resonance dips, which are in good agreement with the simulations, revealing that Al, AuSn and TiW alloys are reliable plasmonic materials for MIR plasmonic devices.