Oleg E Porodinkov

Reduction of interconnect capacitance is one of the key ways to increase the speed of an ultra-large-scale integrated circuit (ULSI). A porous organosilicate glass (OSG) thin film on a platinum sublayer was used as a test vehicle for modelling the conductor–insulator electrodynamic properties in an ULSI. Investigation of the structure and residual effect on the dielectric contributions of the IR absorption bands is a direct approach to control the dielectric properties of the film. The absorption band dispersion was simulated by the Drude–Lorentz equations within a framework consisting of a two-layer medium model. The contributions to the dielectric permittivity of IR absorption bands in thin OSG films with different volume porosities were determined. It was shown that the total dielectric permittivity in the IR region was approximately 10% lower than that at low frequencies of the order of 100 kHz. An additional contribution can arise as a result of low-energy excitations and H ₂ O electrodipole relaxation in the microwave—THz range.

Creation of new dielectric materials for insulating layers of interconnects with low losses at high frequencies (low-k) is one of the main directions of modern microelectronics. Currently, various modifications of standard for modern integrated circuits dielectric structures based on SiO2, differing in composition and morphological characteristics, are being investigated. In this paper, the dielectric losses of thin-film SiO2 samples on an Al substrate are studied by terahertz (THz) and IR spectroscopy. Significant differences in the spectra of such structures in comparison with bulk samples of fused quartz, including berriman resonance modes, were found.

The dielectric response of Ca_1–xPb_xTiO₃ two-phase ceramics is studied in a wide frequency range, from 120 Hz to 100 THz, using impedancemetric radio-frequency methods and infrared spectroscopy. The problems of applications of various dispersion models to analyze infrared spectra of disordered ceramics in which high permittivities are formed in the microwave–terahertz ranges are discussed. The effect of low-frequency relaxation processes on the infrared spectrum and the formation of the constant level of dielectric losses is indicated.