Current Organizations / Institutes

The organizations/institutes from the scholar's latest article


Lu Jia has a total of 27 co-authors. Here are the top co-authors by number of shared publications:

  • Chaowei Si

    Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    8 shared publications
  • Fuhua Yang

    Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

    8 shared publications
  • Zhenyu Wei

    Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

    8 shared publications
  • Guowei Han

    Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

    7 shared publications
  • Jin Ning

    Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

    7 shared publications
  • Pengfei Xu

    Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

    6 shared publications

Latest Publications

  • Open Access

    Full-System Simulation and Analysis of a Four-Mass Vibratory MEMS Gyroscope

    by Chenguang Ouyang, Wenzheng He, Lu Jia, Peng Wang, Kaichun Zhao, Fei Xing, Zheng You

    This study presents a full-system simulation methodology for MEMS, addressing the critical need for reliable performance prediction in microsystem design. While existing digital tools have been widely adopted in related fields, current approaches often remain fragmented and focused on specific aspects of device behavior. In contrast, our proposed framework conducts comprehensive device physics-level analysis by integrating mechanical, thermal and electrical modeling with process simulation. The methodology features a streamlined workflow that enables direct implementation of simulation results into fabrication processes. We model a MEMS gyroscope as an example to verify our simulation approach. Multiphysics coupling is considered to capture real-world device behavior, followed by quantitative assessment of manufacturing variations through virtual prototyping and experimental validation demonstrating the method’s accuracy and practicality. The proposed approach not only improves design efficiency but also provides a robust framework for MEMS gyroscope development. With its ability to predict device performance, this methodology is expected to become an essential tool in microsensor research and development.


  • Research on a capacitive MEMS pressure sensor based on through glass via

    by Yingchun Fu, Fan He, Lu Jia, Guowei Han, Chaowei Si, Meng Zhang

    The paper reports the fabrication and characterization of a capacitive Microelectro Mechanical Systems pressure sensor based on through glass vias (TGV), which had a large dynamic range by operating in touch mode. The substrate with TGV offers the advantage of elimination of parasitic capacitances owing to the superior insulation property of glass. The fabrication process was introduced. In particular, anodic bonding was applied in high vacuum to realize the hermetic package to obtain large operating range and high sensitivity. The performance of the sensor with a sensitive diaphragm of 700 μm × 1400 μm was characterized in the pressure range from −80 to 180 kPa. The sensitivity was determined as 0.072 pF/kPa over the range of 160 kPa with a good linearity of 97%.


  • A novel multi-axis pendulum sandwich structure accelerometer

    by Zhenyu Wei, Chaowei Si, Guowei Han, Yongmei Zhao, Jin Ning, Lu Jia, Yanping Zeng, Fuhua Yang

    This paper proposes a new scheme of pendulum accelerometer with sandwich structure. In this scheme, the electrical signal on the mass is connected to the wafer surface through glass isolated through-silicon-via (TSV), so that the basic characteristics of the accelerometer can be obtained by wafer-level testing. Compared with the current commercial device process scheme, the packaging and testing cost of the device can be greatly reduced. The glass-in-silicon (GIS) encapsulation caps on both sides of the device are prepared by glass isolated TSV and GIS reflow process. By designing the shape and size of the silicon electrode area and glass area of the GIS caps, the parasitic capacitance between the pendulum structure and the fixed electrode is reduced. Another advantage of using TSV to extract the electrical signal of the mass is that the Z-axis inertial force can be detected when the pendulum structure is placed perpendicular to the direction of gravity acceleration. In addition, electrodes are grown on the side of the split device, and when the pendulum structure is placed parallel to the direction of gravity acceleration, the inertial force of the XY-axis can be detected. The test shows that when the range of the pendulum accelerometer based on this scheme is ±2 g, the noise density of the accelerometer is 42 μg √Hz−1 (X-axis), 40 μg √Hz−1 (Y-axis) and 27 μg √Hz−1 (Z-axis), and the bias instability is 6.6 μg (X-axis), 7.1 μg (Y-axis) and 6.8 μg (Z-axis), reaching the level of commercial devices.


  • Design and analysis of MEMS tuning fork gyroscope with dual mode ordering

    by Lu Jia, Guowei Han, Zhenyu Wei, Chaowei Si, Jin Ning, Fuhua Yang, Weihua Han

    This paper reports a MEMS tuning fork gyroscope which can effectively reduce the acceleration output in both drive and sense directions. The structure adjusts the order of mechanical vibration modes through the design of internal and external lever coupling mechanism, moves the spurious in‐phase mode frequency above the antiphase operating frequency, and provides a large frequency separation between the two modes. It provides true mechanical rejection of external shocks and accelerations. Two comparative tuning fork gyroscopes (TFG) structures are designed, which have traditional coupling in the drive direction and sense direction respectively. Through modal simulation, the internal lever‐coupling brings the antiphase drive mode before the in‐phase drive mode and the external lever‐coupling brings the antiphase sense mode before the in‐phase sense mode. The harmonic response simulation of three stiffness unbalanced TFGs verifies that the mode ordering of two directions can effectively suppress the acceleration output. The results show that the new TFG structure can suppress the acceleration output by more than 80%, and the finite element simulation results are consistent with the theoretical calculation.


  • Open Access

    A Novel Packaged Ultra-High Q Silicon MEMS Butterfly Vibratory Gyroscope

    by Lu Jia, Guowei Han, Zhenyu Wei, Chaowei Si, Jin Ning, Fuhua Yang, Weihua Han

    A novel three-dimensional (3D) wafer-level sandwich packaging technology is here applied in the dual mass MEMS butterfly vibratory gyroscope (BFVG) to achieve ultra-high Q factor. A GIS (glass in silicon) composite substrate with glass as the main body and low-resistance silicon column as the vertical lead is processed by glass reflow technology, which effectively avoids air leakage caused by thermal stress mismatch. Sputter getter material is used on the glass cap to further improve the vacuum degree. The Silicon-On-Insulator (SOI) gyroscope structure is sandwiched between the composite substrate and glass cap to realize vertical electrical interconnection by high-vacuum anodic bonding. The Q factors of drive and sense modes in BFVG measured by the self-developed double closed-loop circuit system are significantly improved to 8.628 times and 2.779 times higher than those of the traditional ceramic shell package. The experimental results of the processed gyroscope also demonstrate a high resolution of 0.1°/s, the scale factor of 1.302 mV/(°/s), and nonlinearity of 558 ppm in the full-scale range of ±1800°/s. By calculating the Allen variance, we obtained the angular random walk (ARW) of 1.281°/√h and low bias instability (BI) of 9.789°/h. The process error makes the actual drive and sense frequency of the gyroscope deviate by 8.989% and 5.367% compared with the simulation.


  • Open Access

    ZRO Drift Reduction of MEMS Gyroscopes via Internal and Packaging Stress Release

    by Pengfei Xu, Zhenyu Wei, Lu Jia, Yongmei Zhao, Guowei Han, Chaowei Si, Jin Ning, Fuhua Yang

    Zero-rate output (ZRO) drift induces deteriorated micro-electromechanical system (MEMS) gyroscope performances, severely limiting its practical applications. Hence, it is vital to explore an effective method toward ZRO drift reduction. In this work, we conduct an elaborate investigation on the impacts of the internal and packaging stresses on the ZRO drift at the thermal start-up stage and propose a temperature-induced stress release method to reduce the duration and magnitude of ZRO drift. Self-developed high-Q dual-mass tuning fork gyroscopes (TFGs) are adopted to study the correlations between temperature, frequency, and ZRO drift. Furthermore, a rigorous finite element simulation model is built based on the actual device and packaging structure, revealing the temperature and stresses distribution inside TFGs. Meanwhile, the relationship between temperature and stresses are deeply explored. Moreover, we introduce a temperature-induced stress release process to generate thermal stresses and reduce the temperature-related device sensitivity. By this way, the ZRO drift duration is drastically reduced from ~2000 s to ~890 s, and the drift magnitude decreases from ~0.4 °/s to ~0.23 °/s. The optimized device achieves a small bias instability (BI) of 7.903 °/h and a low angle random walk (ARW) of 0.792 °/√ h, and its long-term bias performance is significantly improved.


  • Open Access

    A Novel High-Q Dual-Mass MEMS Tuning Fork Gyroscope Based on 3D Wafer-Level Packaging

    by Pengfei Xu, Chaowei Si, Yurong He, Zhenyu Wei, Lu Jia, Guowei Han, Jin Ning, Fuhua Yang

    Tuning fork gyroscopes (TFGs) are promising for potential high-precision applications. This work proposes and experimentally demonstrates a novel high-Q dual-mass tuning fork microelectromechanical system (MEMS) gyroscope utilizing three-dimensional (3D) packaging techniques. Except for two symmetrically decoupled proof masses (PM) with synchronization structures, a symmetrically decoupled lever structure is designed to force the antiparallel, antiphase drive mode motion and eliminate low frequency spurious modes. Thermoelastic damping (TED) and anchor loss are greatly reduced by the linearly coupled, momentum- and torque-balanced antiphase sense mode. Moreover, a novel 3D packaging technique is used to realize high Q-factors. A composite substrate encapsulation cap, fabricated by through-silicon-via (TSV) and glass-in-silicon (GIS) reflow processes, is anodically bonded to the wafer-scale sensing structures. A self-developed control circuit is adopted to realize loop control and characterize gyroscope performances. It is shown that a high-reliability electrical connection, together with a high air impermeability package, can be fulfilled with this 3D packaging technique. Furthermore, the Q-factors of the drive and sense modes reach up to 51,947 and 49,249, respectively. This TFG realizes a wide measurement range of ±1800 °/s and a high resolution of 0.1°/s with a scale factor nonlinearity of 720 ppm after automatic mode matching. In addition, long-term zero-rate output (ZRO) drift can be effectively suppressed by temperature compensation, inducing a small angle random walk (ARW) of 0.923°/√h and a low bias instability (BI) of 9.270°/h.


  • Open Access

    ZRO Drift Reduction of MEMS Gyroscopes via Internal and Packaging Stress Release

    by Pengfei Xu, Zhenyu Wei, Lu Jia, Yongmei Zhao, Guowei Han, Chaowei Si, Jin Ning, Fuhua Yang

    Zero-rate output (ZRO) drift induces deteriorated micro-electromechanical system (MEMS) gy-roscope performances, severely limiting its practical applications. Hence, it is vital to explore an effective method toward ZRO drift reduction. In this work, we conduct an elaborate investigation on the impacts of the internal and packaging stresses on the ZRO drift at the thermal start-up stage, and propose a temperature-induced stress release method to reduce the duration and magnitude of ZRO drift. Self-developed high-Q dual mass tuning fork gyroscopes (TFGs) are adopted to study the correlations between temperature, frequency and ZRO drift. Furthermore, a rigorous finite element simulation model is built based on the actual device and packaging structure, revealing the temperature and stresses distribution inside TFGs. Meanwhile, the relationship between temperature and stresses are deeply explored. Moreover, we introduce a temperature-induced stress release process to generate thermal stresses and reduce the temperature-related device sensitivity. By this way, the ZRO drift duration is drastically reduced from ~2000 s to ~890 s, and the drift magnitude decreases from ~0.4 °/s to ~0.23 °/s. This stress release method achieves a small bias instability (BI) of 7.903 °/h and a low angle random walk (ARW) of 0.792 °/√h, and the long-term bias performance is significantly improved.


  • Open Access

    A Novel High-Q Dual Mass MEMS Tuning Fork Gyroscope Based On 3D Wafer-Level Packaging

    by Pengfei Xu, Yurong He, Zhenyu Wei, Lu Jia, Guowei Han, Chaowei Si, Jin Ning, Fuhua Yang

    Tuning fork gyroscopes (TFGs) are promising for potential high-precision applications. This work proposes and experimentally demonstrates a novel high-Q dual mass tuning fork microelectro-mechanical system (MEMS) gyroscope utilizing three-dimensional (3D) packaging techniques. Except for two symmetrically-decoupled proof masses (PM) with synchronization structures, a symmetrically-decoupled lever structure is designed to force the antiparallel, antiphase drive-mode motion and basically eliminate the low-frequency spurious modes. The thermoelastic damping (TED) and anchor loss are greatly reduced by the linearly-coupled, momentum- and torque-balanced antiphase sense mode. Besides, a novel 3D packaging technique is used to realize high Q-factors. A composite substrate encapsulation cap, fabricated by through-silicon-via (TSV) and glass-in-silicon (GIS) reflow processes, is anodically bonded to the sensing structures at wafer scales. A self-developed control circuit is adopted to realize loop control and characterize gyro-scope performances. It is shown that a high-reliability electrical connection together with a high-air-impermeability package can be fulfilled with this 3D packaging technique. Furthermore, the Q-factors of the drive and sense modes reach up to 51947 and 49249, respectively. This TFG realizes a wide measurement range of ±1800° /s and a high resolution of 0.1° /s with a scale-factor nonlinearity 720 ppm after automatic mode-matching. Besides, the long-term zero-rate output (ZRO) drift can be effectively suppressed by temperature compensation, inducing a small angle random walk (ARW) of 0.923°/√h and a low bias instability (BI) of 9.270°/h.


  • Open Access

    A Real-Time Circuit Phase Delay Correction System for MEMS Vibratory Gyroscopes

    by Pengfei Xu, Zhenyu Wei, Zhiyu Guo, Lu Jia, Guowei Han, Chaowei Si, Jin Ning, Fuhua Yang

    With the development of the designing and manufacturing level for micro-electromechanical system (MEMS) gyroscopes, the control circuit system has become a key point to determine their internal performance. Nevertheless, the phase delay of electronic components may result in some serious hazards. This study described a real-time circuit phase delay correction system for MEMS vibratory gyroscopes. A detailed theoretical analysis was provided to clarify the influence of circuit phase delay on the in-phase and quadrature (IQ) coupling characteristics and the zero-rate output (ZRO) utilizing a force-to-rebalance (FTR) closed-loop detection and quadrature correction system. By deducing the relationship between the amplitude-frequency, the phase-frequency of the MEMS gyroscope, and the phase relationship of the whole control loop, a real-time correction system was proposed to automatically adjust the phase reference value of the phase-locked loop (PLL) and thus compensate for the real-time circuit phase delay. The experimental results showed that the correction system can accurately measure and compensate the circuit phase delay in real time. Furthermore, the unwanted IQ coupling can be eliminated and the ZRO was decreased by 755% to 0.095°/s. This correction system realized a small angle random walk of 0.978°/√h and a low bias instability of 9.458°/h together with a scale factor nonlinearity of 255 ppm at room temperature. The thermal drift of the ZRO was reduced to 0.0034°/s/°C at a temperature range from −20 to 70 °C.