Andre Venter
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Andre Venter has a total of 70 co-authors. Here are the top co-authors by number of shared publications:
J.R. Botha
15 shared publicationsC. Nyamhere
9 shared publicationsD.M. Murape
6 shared publicationsJ. R. Botha
Nelson Mandela Metropolitan Univ. (South Africa)
6 shared publicationsN. Eassa
Nelson Mandela Metropolitan Univ. (South Africa)
6 shared publications- Hendrik Christoffel Swart
Department of Physics, University of the Free State, Bloemfontein, ZA9300, South Africa
5 shared publications
Latest Publications
- Open Access
- 20 December 2025
- Published by Elsevier in Thin Solid Films
- Vol. 833
Electrical characterization of sputter-induced deep levels in GaN thin films synthesized by electrodeposition
- 20 December 2025
- Published by Elsevier in Thin Solid Films
- Vol. 833
Open AccessElectrical characterization of sputter-induced deep levels in GaN thin films synthesized by electrodeposition
- 1 April 2018
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 535, 237-241
Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition
- 1 April 2018
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 535, 237-241
Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition
- 1 April 2018
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 535, 198-201
Capacitance spectroscopy on n -type GaNAs/GaAs embedded quantum structure solar cells
- 1 April 2018
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 535, 198-201
Capacitance spectroscopy on n -type GaNAs/GaAs embedded quantum structure solar cells
- 1 April 2018
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 535, 119-123
Influence of a NiO intermediate layer on the properties of ZnO grown on Si by chemical bath deposition
- 1 April 2018
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 535, 119-123
Influence of a NiO intermediate layer on the properties of ZnO grown on Si by chemical bath deposition
- 1 January 2016
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 480, 68-71
Transport characteristics of n-ZnO/p-Si heterojunction as determined from temperature dependent current–voltage measurements
- 1 January 2016
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 480, 68-71
Transport characteristics of n-ZnO/p-Si heterojunction as determined from temperature dependent current–voltage measurements
- 1 January 2015
- Published by Elsevier in Thin Solid Films
- Vol. 574, 32-37
Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements
- 1 January 2015
- Published by Elsevier in Thin Solid Films
- Vol. 574, 32-37
Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements
- 1 November 2014
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 612, 154-162
Growth of ZnS-coated ZnO nanorod arrays on (100) silicon substrate by two-step chemical synthesis
- 1 November 2014
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 612, 154-162
Growth of ZnS-coated ZnO nanorod arrays on (100) silicon substrate by two-step chemical synthesis
- 23 June 2014
- Published by SPIE-Intl Soc Optical Eng
- Vol. 9257, 925703
Photoluminescence of chemically treated InAs (111)A
Variable laser power and temperature dependent photoluminescence (PL) measurements were used to identify some of the optical transitions and impurity-related emissions for chemically treated (Br-methanol, (NH4)2S + S or [(NH4)2S/ (NH4)2SO4] + S solutions) or oxidised (annealed in oxygen) bulk n-InAs (111)A. A combination of PL and X-ray photoelectron spectroscopy (XPS) measurements before and after various treatments was used to identify the chemical nature of the impurities giving rise to bound exciton recombination in InAs (111). Band–to-band transitions have been observed at 0.4185 eV. In addition, two shallow neutral donor bound excitons ascribed to atomic oxygen (at 0.412 eV) and to sulphur (at 0.414 eV), have been detected after treatment.
- 23 June 2014
- Published by SPIE-Intl Soc Optical Eng
- Vol. 9257, 925703
Photoluminescence of chemically treated InAs (111)A
Variable laser power and temperature dependent photoluminescence (PL) measurements were used to identify some of the optical transitions and impurity-related emissions for chemically treated (Br-methanol, (NH4)2S + S or [(NH4)2S/ (NH4)2SO4] + S solutions) or oxidised (annealed in oxygen) bulk n-InAs (111)A. A combination of PL and X-ray photoelectron spectroscopy (XPS) measurements before and after various treatments was used to identify the chemical nature of the impurities giving rise to bound exciton recombination in InAs (111). Band–to-band transitions have been observed at 0.4185 eV. In addition, two shallow neutral donor bound excitons ascribed to atomic oxygen (at 0.412 eV) and to sulphur (at 0.414 eV), have been detected after treatment.
- 1 April 2014
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 439, 149-152
Optical and electrical characteristics of ZnO/Si heterojunction
- 1 April 2014
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 439, 149-152
Optical and electrical characteristics of ZnO/Si heterojunction
- 1 April 2014
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 439, 1-2
Preface