Quintin Cumston
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Quintin Cumston has a total of 4 co-authors. Here are the top co-authors by number of shared publications:
- Alan C. West
Columbia University
3 shared publications - Katayun Barmak
Columbia University
3 shared publications - Kevin R. Coffey
Department of Materials Science and Engineering, University of Central Florida 2 , Orlando, Florida 32816, USA
3 shared publications - Ryan Gusley
Department of Chemical Engineering, Columbia University 1 , New York, New York 10027, USA
3 shared publications
Latest Publications
- 24 May 2022
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 131 (20) , 209903
Erratum: “Electrodeposition of Cu(111) onto a Ru(0001) seed layer for epitaxial Cu interconnects” J. Appl. Phys. 130, 135301 (2021)
- 24 May 2022
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 131 (20) , 209903
Erratum: “Electrodeposition of Cu(111) onto a Ru(0001) seed layer for epitaxial Cu interconnects” J. Appl. Phys. 130, 135301 (2021)
- 1 October 2021
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 130 (13) , 135301
Electrodeposition of Cu(111) onto a Ru(0001) seed layer for epitaxial Cu interconnects
The electrodeposition of Cu onto epitaxial Ru(0001) seed layers was investigated from a sulfuric acid-based solution containing dilute copper(II) sulfate and chloride ions. Using galvanostatic deposition at −350 μA/cm2, Cu was deposited epitaxially onto a 30 nm-thick Ru(0001) seed layer, despite a compressive misfit strain between −6.9% and −8.3%, depending on the extent of strain relaxation of the Ru layer. However, rather than depositing as a single crystal, Cu grew as a bicrystal having a common out-of-plane orientation of Cu(111) and two equivalent in-plane orientations. The Cu grain size was large, on the order of micrometers, and the grain boundaries were identified as incoherent twin boundaries. The Cu initially grew as isolated islands, coalescing into a contiguous film at thicknesses around 50 nm. The Cu film was rough, and thickness and coverage varied over the electrodeposited region. After the initial island growth, Cu void fraction and film roughness both decreased with thickness as the deposit transitioned into a planar film with nanometric islands growing on the film surface. However, at thicknesses exceeding 200 nm, anisotropic growth of large, faceted Cu islands on the planar Cu film again increased the surface roughness. The epitaxially deposited Cu bicrystal showed an improvement in resistivity when compared with polycrystalline Cu similarly electrodeposited onto a polycrystalline Ru seed.- 1 October 2021
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 130 (13) , 135301
Electrodeposition of Cu(111) onto a Ru(0001) seed layer for epitaxial Cu interconnects
The electrodeposition of Cu onto epitaxial Ru(0001) seed layers was investigated from a sulfuric acid-based solution containing dilute copper(II) sulfate and chloride ions. Using galvanostatic deposition at −350 μA/cm2, Cu was deposited epitaxially onto a 30 nm-thick Ru(0001) seed layer, despite a compressive misfit strain between −6.9% and −8.3%, depending on the extent of strain relaxation of the Ru layer. However, rather than depositing as a single crystal, Cu grew as a bicrystal having a common out-of-plane orientation of Cu(111) and two equivalent in-plane orientations. The Cu grain size was large, on the order of micrometers, and the grain boundaries were identified as incoherent twin boundaries. The Cu initially grew as isolated islands, coalescing into a contiguous film at thicknesses around 50 nm. The Cu film was rough, and thickness and coverage varied over the electrodeposited region. After the initial island growth, Cu void fraction and film roughness both decreased with thickness as the deposit transitioned into a planar film with nanometric islands growing on the film surface. However, at thicknesses exceeding 200 nm, anisotropic growth of large, faceted Cu islands on the planar Cu film again increased the surface roughness. The epitaxially deposited Cu bicrystal showed an improvement in resistivity when compared with polycrystalline Cu similarly electrodeposited onto a polycrystalline Ru seed.- Open Access
- 1 May 2021
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 168 (5) , 052504
Electrodeposition of Ru onto Ru and Au Seed Layers from Solutions of Ruthenium Nitrosyl Sulfate and Ruthenium Chloride
The electrodeposition of Ru was investigated from solutions of ruthenium(III) nitrosyl sulfate and ruthenium(III) chloride onto seed layers of epitaxial and polycrystalline Ru and epitaxial Au. Using both galvanostatic and potentiostatic deposition modes, metallic Ru was found to electrodeposit as a porous layer comprised of (0001) oriented Ru crystallites, the presence of which was discovered and confirmed by X-ray and scanning transmission and transmission electron microscope (S/TEM) analyses. This finding was independent of the Ru salt and seed layer used. Using X-ray reflectivity (XRR), the average film density ρ e f f of the porous electrodeposited Ru layer was measured as less than the density of bulk Ru ρ R u , b u l k (14.414 g cm−3). Increasing the magnitude of the applied current density from −100 μA cm−2 to −10 mA cm−2 in solutions of Ru nitrosyl sulfate increased the ρ e f f from 7.4 g cm−3 to 9.7 g cm−2 while the current efficiency decreased from 9.4% to 4.3%.
- 1 May 2021
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 168 (5) , 052504
Open AccessElectrodeposition of Ru onto Ru and Au Seed Layers from Solutions of Ruthenium Nitrosyl Sulfate and Ruthenium Chloride
The electrodeposition of Ru was investigated from solutions of ruthenium(III) nitrosyl sulfate and ruthenium(III) chloride onto seed layers of epitaxial and polycrystalline Ru and epitaxial Au. Using both galvanostatic and potentiostatic deposition modes, metallic Ru was found to electrodeposit as a porous layer comprised of (0001) oriented Ru crystallites, the presence of which was discovered and confirmed by X-ray and scanning transmission and transmission electron microscope (S/TEM) analyses. This finding was independent of the Ru salt and seed layer used. Using X-ray reflectivity (XRR), the average film density ρ e f f of the porous electrodeposited Ru layer was measured as less than the density of bulk Ru ρ R u , b u l k (14.414 g cm−3). Increasing the magnitude of the applied current density from −100 μA cm−2 to −10 mA cm−2 in solutions of Ru nitrosyl sulfate increased the ρ e f f from 7.4 g cm−3 to 9.7 g cm−2 while the current efficiency decreased from 9.4% to 4.3%.