Hui Li

As the initial energetic device and driving force of weapon systems, pyrotechnics serve as the core and most sensitive explosive initiating device of weaponry. To accommodate the development requirements of various informatized and miniaturized weapons, MEMS pyrotechnics, characterized primarily by energy conversion informatization, structural miniaturization, and train integration, have become a significant direction in the development of pyrotechnics technology. MEMS Safety and Arming Devices, serving as the energy transfer control mechanisms for micro-explosive trains in MEMS pyrotechnics, are one of the key technologies in the design of MEMS pyrotechnics. This study conducted a classification study of a silicon-based MEMS Safety and Arming Device from the perspective of micro-explosive train structures, analyzed the technical principles of different S&A device, explored their application progress and research status, and summarizes the trends of the micro-miniaturization, integration, and informatization of the silicon-based MEMS Safety and Arming Device, providing new ideas for the research and the design of MEMS Safety and Arming Devices.

The purpose of this paper is to study the adaptability and enhancement methods of ignition chips in complex electromagnetic environments. In this paper, combined with simulation and calculation technology, we first establish the electromagnetic–electrical–thermal coupling simulation model of ignition chips and analyze the influence of two electromagnetic environments, continuous electromagnetic wave and nuclear electromagnetic pulse, on the electrical–thermal coupling in the bridge area of the ignition chip. The results show that a continuous electromagnetic wave field strength of 1200 V/m, irradiated for 5 s, a nuclear electromagnetic pulse with a rise time of 5 ns, a half-height width of 24 ns, and a leg wire length of 350 mm will cause the ignition chip to fire accidently. In order to suppress its accidental firing, the electromagnetic protection is enhanced by using parallel Transient Voltage Suppressor (TVS) diodes. It has been shown that parallel TVS diodes provide good protection against both continuous electromagnetic waves and nuclear electromagnetic pulses. In particular, the peak induced current decreases by more than 64.7% during the action of continuous electromagnetic waves, and the maximum temperature in the bridge area decreases by 54.34% during the action of nuclear electromagnetic pulses.

Pyrotechnic device is the key initiating component of weapon system, and its function reliability will directly affect the triggering of detonation and actuation mechanism. In order to enhance the survival ability of pyrotechnic device in intricate electromagnetic interference environment, it is necessary to carry out in-depth research on the electromagnetic protection technique of pyrotechnic device. In this paper, a new electromagnetic protection circuit based on vertical punch through PN junction device is proposed, which monolithically integrates the circuit with polysilicon semiconductor bridge on a single chip. The Electro-static Discharge (ESD) test was carried out according to the method specified by standard electrostatic standard 500 pF/500 Ω/25 kV, and the ESD capability of the proposed new chip was not less than 25 kV. Compared with the electromagnetic protection circuit by transient voltage suppressor diode based on lateral punch through junction device structure, the new chip increases the effective junction area of PN junction, reduces the current density, and increases the current conduction ability and electrostatic roughness of the diode. The new chip has a larger diode effective junction capacitance, which not only improves the ESD capability but also improves the RF protection capability at the same time.

The safety and reliability of the initiating explosive devices (IEDs) are critical for the weapon system. As the core components of IEDs, the method of resistance designing and the performance of conversion energy of energy conversion components (ECCs) are worth being studied. In this paper, the design method for the resistance of ECCs is established based on the finite element discrete method, and the currents of melting and electric explosion are presented for evaluating the performance of ECCs. The results show that the resistance of the ECCs is 1 ± 0.05 Ω with consistency. The ECCs were designed by the established design method of resistance and manufactured by the established machining method. The melting current of ECCs is 1.8 A, which is calculated by the infrared temperature measurement and finite element simulation. The electric explosion current of ECCs is 5 A, which was obtained by combining the snapshot obtained via the high-speed camera and finite element simulation.

MEMS electric energy utilization rate is the key parameter affecting firing performance. It has important relationship with its preparation technology, microscale and structure morphology. In order to improve the theory of energy exchange element design for MEMS pyrotechnics, reduce the design error of transducer parameters at microscale. To ensure the performance of MEMS pyrotechnics, in this paper, the influence of the central line of the thin film transducer element on the electrothermal conversion is simulated and analyzed. The electrothermal conversion and temperature characterization of different central lines in the transducer bridge area are calculated by the finite element method. The influence of the central line on the thermal efficiency under microscale is revealed. The corresponding data are obtained.

The simulation model of MEMS energy changer is established by using the finite element analysis software ANSYS. The electrothermal performance of MEMS energy changer under the action of different currents was simulated and analyzed. The bridge area is made of NiCr, and the shape of the bridge area is two different chamfering rectangles. The temperature distribution diagram of MEMS energy changers, the temperature change curve and the phase transition distribution diagram of the bridge region were obtained when the four current values acted on each other. The simulation results are analyzed and discussed.

With the development of energetic materials (EMs) and microelectromechanical systems (MEMS) initiating explosive devices, the measurement of detonation pressure generated by EMs in the microscale has become a pressing need. This paper develops a manganin thin film ultra-high pressure sensor based on MEMS technology for measuring the output pressure from micro-detonator. A reliable coefficient is proposed for designing the sensor’s sensitive element better. The sensor employs sandwich structure: the substrate uses a 0.5 mm thick alumina ceramic, the manganin sensitive element with a size of 0.2 mm × 0.1 mm × 2 μm and copper electrodes of 2 μm thick are sputtered sequentially on the substrate, and a 25 μm thick insulating layer of polyimide is wrapped on the sensitive element. The static test shows that the piezoresistive coefficient of manganin thin film is 0.0125 GPa⁻¹. The dynamic experiment indicates that the detonation pressure of micro-detonator is 12.66 GPa, and the response time of the sensor is 37 ns. In a word, the sensor developed in this study is suitable for measuring ultra-high pressure in microscale and has a shorter response time than that of foil-like manganin gauges. Simultaneously, this study could be beneficial to research on ultra-high-pressure sensors with smaller size.