Caixia Kan

Achieving high optical transmittance and shielding effectiveness (SE) remains challenging for transparent electromagnetic interference (EMI) shielding materials. Herein, a physics‐guided, constraint‐driven design strategy for metallic meshes is developed through electromagnetic simulations, machine learning, and experiments. Single‐layer SE approaches saturation with increasing conductivity at a level set by the mesh geometry, dominated by the period, while the conductivity required for saturation decreases with increasing conductor cross‐section. At a fixed cross‐sectional area, a narrow‐and‐high cross‐section (w < t) improves both SE and transmittance relative to a square one. Interference‐enhanced stacking allows double‐ and triple‐layer SE to reach approximately 2.17 and 3.40 times the single‐layer value expressed in dB, respectively, with equal metal allocation maximizing SE under a fixed metal budget. XGBR and response‐surface models enable rapid screening of structures that meet prescribed SE requirements while balancing transmittance, total interlayer spacing, and metal cross‐sectional area. The selected triple‐layer design achieves 88% transmittance, 10.86% haze, and an average experimental SE of 92.17 dB in the X‐band, and its assembly tolerance and conductivity sensitivity are further analyzed. This strategy links quantitative electromagnetic analysis with requirement‐driven design of transparent metallic meshes.

Combined with machine learning, this study utilizes Fe³⁺-mediated synthesis to produce ultralong Ag NWs with an aspect ratio of 2750, demonstrating their superior performance in flexible, highly transparent, and low-resistance conductive films.

Polarization-sensitive self-powered ultraviolet photodetectors are of great significance for advanced target recognition, machine vision, and artificial intelligence, particularly in complex optical environments where multidimensional information extraction is critical. We report a self-powered photodetector exploiting a RbCu2I3/SiC heterojunction, which affords concurrent ultraviolet spectral discrimination and polarization-resolved detection without external bias. At zero bias and 310 nm excitation, the device simultaneously achieves a light-to-dark-current ratio ∼106, a responsivity of 240 mA/W, a detectivity of 9 ×1013 Jones, a microsecond-scale transient response (τrise/τfall = 315/515 μs), and an exceptional dichroic ratio of 8.9. Collectively, these specifications establish a new performance benchmark, significantly surpassing not only commercially available all-inorganic photodetectors but also the most advanced laboratory-scale counterparts reported to date. The superior photodetection of RbCu2I3/SiC originates from the synergistic interplay of RbCu2I3's intrinsic anisotropic carrier mobility and favorable type-II band alignment, which together yield an ultralow dark current (nA-level), a high rectification ratio (∼104), and efficient spatial separation and unidirectional transport of photocarriers. Leveraging these advantages, we further demonstrate a polarization-resolved image encryption–decryption system integrated with a convolutional neural network, achieving a decryption accuracy of 98.1%. This work highlights the transformative potential of RbCu2I3/SiC heterostructures for next-generation multifunctional optoelectronics and secure optical communication, opening new avenues for intelligent photonic systems.

Conventional neuromorphic vision systems suffer from architectural fragmentation, wherein sensing, memory, and processing are distributed across discrete modules, causing high latency, energy waste, and poor dynamic adaptability. Here, we present a wavelength-driven trimodal field-effect phototransistor (TriM-FEP) based on layered HfS2, which offers a new solution to this challenge. This single device integrates polarity-switchable photoresponses and synaptic dynamics without external bias or complex circuitry. By simply tuning the incident wavelength, the TriM-FEP delivers three distinct, dynamically switchable photoresponses: a synaptic-like photoresponse under solar-blind ultraviolet, fast negative photocurrent in the visible, and fast positive photocurrent in the near-infrared. Notably, this unique polarity reversal and speed variation are dominated by the photogating effect and the bolometric effect at different wavelengths, respectively. Beyond fundamental physics, the TriM-FEP enables real-time multichannel encrypted optical communication and in-sensor image preprocessing, eliminating the need for separate computing units. This work transcends the limitations of multicomponent cooperation, establishing a compact, energy-efficient platform that unifies sensing, memory, and processing at the device level.

Bulk photovoltaic effect (BPVE) enables self‐powered optoelectronics beyond the Shockley‐Queisser limit, yet high‐performance junction‐free near‐infrared (NIR) detectors remain elusive due to weak intrinsic non‐centrosymmetry and severe dark current in existing narrow‐gap semiconductors. Herein, we synthesize polar needle‐like GaSb single crystals via self‐catalyzed CVD, exploiting its 0.72 eV direct bandgap, uniform non‐centrosymmetric polarity, and high crystallinity to realize a zero‐bias GaSb field‐effect‐transistor (FET) architecture coupled with an ultra‐broad 210‐1800 nm photoresponse and ultralow ∼3 pA dark current. At 1550 nm and 100 mW/cm ² , five devices deliver a mean short‐circuit current density of 17.9 ± 12.0 mA/cm ² (increased up to 349.37 ± 191.75 mA/cm ² upon 10 W/cm ² illumination) and an effective bulk photovoltaic coefficient (β _eff ) of 0.18 ± 0.12 V ⁻¹ . Near a tiny −4 mV transition bias, switchable bipolar photoresponse yields an exceptional polarization‐current ratio approaching 300. Mechanistic studies verify that intrinsic shift current dominates the channel photocurrent, modulated by photon‐drag injection and local Dember effect. Beyond photodetection, we integrate GaSb FET with response‐guided computational imaging and a lightweight convolutional neural network, boosting letter‐recognition accuracy through scattering media from 63.8% to 99.4%. This work establishes GaSb as a transformative BPVE platform, advancing low‐power polarization‐resolved NIR intelligent perception by integrating material symmetry engineering, device physics, and computational imaging.

Transparent electromagnetic shielding windows with high optical transmittance and strong electromagnetic interference (EMI) suppression are essential for modern electronics. Herein, cavity-based silver nanowire (AgNW)-coated glass was developed to enhance EMI shielding while maintaining high transparency. AgNWs were synthesized by a modified polyol method, deposited onto glass substrates by electrostatic spray coating, and assembled face-to-face with controlled spacers to form cavity-type structures. By varying the air-layer thickness from 1 to 10 mm, the cavity configuration achieved more than twofold SE enhancement compared with single-layer AgNW glass at comparable optical transmittance, with maximum SE obtained at 7–8 mm. Across 8–12 GHz, cavity-based glasses exhibited average SE above 45 dB and SE exceeding 50 dB in specific frequency regions. At 10 GHz, the optimized sample achieved maximum SE of 56 dB while maintaining optical transmittance of 81%. Simulations indicate that cavity-induced field interference enhances electromagnetic energy dissipation by increasing SEA relative to SER. This AgNW cavity strategy provides a scalable route to high-performance transparent EMI-shielding glass.

The monolithic integration of ultraviolet (UV) and near‐infrared (NIR) photodetection in a single device is fundamentally constrained by the inherent spectral crosstalk and architectural complexity of traditional heterostructures. Herein, we circumvent these limitations by introducing a paradigm‐shifting halide‐assisted defect‐compensation strategy that induces a semimetallic‐to‐semiconducting transition in topological 1T’‐MoTe ₂ , opening a tunable bandgap while preserving its intrinsically high carrier mobility. This material transformation enables a monolithic I‐1T’‐MoTe ₂ /GaN van der Waals heterojunction that achieves two mechanistically distinct, zero‐bias photodetection pathways within a single interface: a Schottky‐junction‐mediated UV response and a band‐engineered NIR absorption. The device delivers exceptional performance, including responsivities of 268 mA/W (350 nm) and 258 mA/W (750 nm), detectivities exceeding 10 ¹¹ Jones, and microsecond‐scale response speeds. Crucially, it overcomes the persistent trade‐off between high sensitivity and polarization discrimination, yielding a record polarization ratio of 8.55 in the NIR regime. We further validate its practical utility through robust demonstrations in encrypted optical communication and filter‐free multispectral imaging, underscoring its resilience and readiness for real‐world deployment. By establishing a material‐intrinsic route to programmable band‐structure engineering in topological systems, this work lays a transformative foundation for intelligent, polarization‐resolved photonic platforms and next‐generation secure sensing technologies.

Cu nanorods exhibit highly tunable SPR in the near-infrared region and excellent catalytic activity rivaling that of Au nanorods.