Ming-Zhu Huang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Ming-Zhu Huang has a total of 9 co-authors. Here are the top co-authors by number of shared publications:
- Wai-Yim Ching
Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, MO 64110, USA
3 shared publications Bohuai Xiao
The State Key Laboratory of Refractories and Metallurgy the Institute of Advanced Materials and Nanotechnology College of Materials and Metallurgy Wuhan University of Science and Technology Wuhan Hubei 430081 China
1 shared publication- Jin He
Department of Physics, Florida International University, Miami, Florida 33199, United States
1 shared publication - Lei Yu
The State Key Laboratory of Refractories and Metallurgy, the Institute of Advanced Materials and Nanotechnology, Wuhan University of Science and Technology, Wuhan, Hubei 430081, China
1 shared publication Mingyang Zhang
The State Key Laboratory of Refractories and Metallurgy the Institute of Advanced Materials and Nanotechnology College of Materials and Metallurgy Wuhan University of Science and Technology Wuhan Hubei 430081 China
1 shared publication- Shuai Chang
The State Key Laboratory of Refractories and Metallurgy, Faculty of Materials Wuhan University of Science and Technology 430081 Wuhan, Hubei China
1 shared publication
Latest Publications
Developing Longer‐Lived Single Molecule Junctions with a Functional Flexible Electrode
Creating single‐molecule junctions with a long‐lived lifetime at room temperature is an open challenge. Finding simple and efficient approaches to increase the durability of single‐molecule junction is also of practical value in molecular electronics. Here it is shown that a flexible gold‐coated nanopipette electrode can be utilized in scanning tunneling microscope (STM) break‐junction measurements to efficiently enhance the stability of molecular junctions by comparing with the measurements using conventional solid gold probes. The stabilizing effect of the flexible electrode displays anchor group dependence, which increases with the binding energy between the anchor group and gold. An empirical model is proposed and shows that the flexible electrode could promote stable binding geometries at the gold‐molecule interface and slow down the junction breakage caused by the external perturbations, thereby extending the junction lifetime. Finally, it is demonstrated for the first time that the internal conduit of the flexible STM tip can be utilized for the controlled molecule delivery and molecular junction formation.
Developing Longer‐Lived Single Molecule Junctions with a Functional Flexible Electrode
Creating single‐molecule junctions with a long‐lived lifetime at room temperature is an open challenge. Finding simple and efficient approaches to increase the durability of single‐molecule junction is also of practical value in molecular electronics. Here it is shown that a flexible gold‐coated nanopipette electrode can be utilized in scanning tunneling microscope (STM) break‐junction measurements to efficiently enhance the stability of molecular junctions by comparing with the measurements using conventional solid gold probes. The stabilizing effect of the flexible electrode displays anchor group dependence, which increases with the binding energy between the anchor group and gold. An empirical model is proposed and shows that the flexible electrode could promote stable binding geometries at the gold‐molecule interface and slow down the junction breakage caused by the external perturbations, thereby extending the junction lifetime. Finally, it is demonstrated for the first time that the internal conduit of the flexible STM tip can be utilized for the controlled molecule delivery and molecular junction formation.
- 15 August 1996
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (8) , 5299-5308
Electron states in a nearly ideal random-network model of amorphousglassA large continuous random-network model with 1296 atoms and periodic boundary conditions has been constructed for amorphous glass. The atoms in this model are all fully coordinated with an overall small bond length and bond angle distortions. The calculated pair distribution function is in close agreement with the diffraction data. Based on this model, a first-principles calculation of the electron states is performed and the resulting wave functions are analyzed. Subtle differences in the density of states with the crystalline are found. The calculated density of states are in good agreement with x-ray emission data and show the importance of Si 3d orbitals. The distributions of effective charges on Si and O atoms are studied in relation to the short-range order in the glass. It is found that O atoms with a Si-O-Si bridging angle of less than 120° have smaller effective charges and can be identified as quasidefective centers that are responsible for the two-level tunneling at low temperature. It is also shown that localized states at the top of the band are induced by the elongation of the Si-O bond and those at the bottom of the band are related to atoms with shortened bonds. A mobility edge of 0.2 eV at the top of the valence band is obtained. A similar mobility edge for the conduction band cannot be located because of the much less localized nature of the states. © 1996 The American Physical Society.- 15 August 1996
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (8) , 5299-5308
Electron states in a nearly ideal random-network model of amorphousglassA large continuous random-network model with 1296 atoms and periodic boundary conditions has been constructed for amorphous glass. The atoms in this model are all fully coordinated with an overall small bond length and bond angle distortions. The calculated pair distribution function is in close agreement with the diffraction data. Based on this model, a first-principles calculation of the electron states is performed and the resulting wave functions are analyzed. Subtle differences in the density of states with the crystalline are found. The calculated density of states are in good agreement with x-ray emission data and show the importance of Si 3d orbitals. The distributions of effective charges on Si and O atoms are studied in relation to the short-range order in the glass. It is found that O atoms with a Si-O-Si bridging angle of less than 120° have smaller effective charges and can be identified as quasidefective centers that are responsible for the two-level tunneling at low temperature. It is also shown that localized states at the top of the band are induced by the elongation of the Si-O bond and those at the bottom of the band are related to atoms with shortened bonds. A mobility edge of 0.2 eV at the top of the valence band is obtained. A similar mobility edge for the conduction band cannot be located because of the much less localized nature of the states. © 1996 The American Physical Society.- 15 November 1994
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (10) , 6047-6049
Theoretical analysis of the spin-density distributions in Y2Fe17N3 and Y2Fe17C3
The electronic structures and spin‐density distributions in Y2Fe17N3 and Y2Fe17C3 are calculated using the self‐consistent spin‐polarized orthogonalized‐linear‐combination‐of‐atomic‐orbitals method. The N or C atoms are assumed to occupy the (9e) sites in the rhombohedral structure. The Fe (18f) and N or C at the (9e) site form covalent bonds which result in a very nonspherically symmetric spin‐density distribution. The calculation shows a reduced moment for the Fe (18f) sites due to doping. However, the moments at other sites are increased due to lattice expansion. There are some differences in the spin‐density distribution between N and C at the (9e) site. By comparing with the results of calculation on the pure Y2Fe17 at different volumes, changes in moment enhancement and density of states at the Fermi level due to lattice expansion alone and that due to the chemical effect of introducing N or C are separated.
- 15 November 1994
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (10) , 6047-6049
Theoretical analysis of the spin-density distributions in Y2Fe17N3 and Y2Fe17C3
The electronic structures and spin‐density distributions in Y2Fe17N3 and Y2Fe17C3 are calculated using the self‐consistent spin‐polarized orthogonalized‐linear‐combination‐of‐atomic‐orbitals method. The N or C atoms are assumed to occupy the (9e) sites in the rhombohedral structure. The Fe (18f) and N or C at the (9e) site form covalent bonds which result in a very nonspherically symmetric spin‐density distribution. The calculation shows a reduced moment for the Fe (18f) sites due to doping. However, the moments at other sites are increased due to lattice expansion. There are some differences in the spin‐density distribution between N and C at the (9e) site. By comparing with the results of calculation on the pure Y2Fe17 at different volumes, changes in moment enhancement and density of states at the Fermi level due to lattice expansion alone and that due to the chemical effect of introducing N or C are separated.
- 1 June 1994
- Published by Taylor & Francis in Ferroelectrics
- Vol. 156 (1) , 105-110
First-principles calculation of second harmonic generation in α-quartz
The second order nonlinear susceptibility tensor element {xxx} of χ(2) (ω) in α-quartz is calculated using a full band structure approach. A scissor operator is applied to the band structure obtained from the first-principles OLCAO method using local density approximation (LDA). The calculated zero frequency value χ(2) (0) is in good agreement with experiment and another recent LDA calculation. The importance of having accurate and sufficient number of conduction band states is demonstrated. It is also shown that the virtual-hole process in α-quartz is non-negligible. The dispersion curve for χ(2) (ω) up to 10 eV is presented and is found to be very rich in structures.
- 1 June 1994
- Published by Taylor & Francis in Ferroelectrics
- Vol. 156 (1) , 105-110
First-principles calculation of second harmonic generation in α-quartz
The second order nonlinear susceptibility tensor element {xxx} of χ(2) (ω) in α-quartz is calculated using a full band structure approach. A scissor operator is applied to the band structure obtained from the first-principles OLCAO method using local density approximation (LDA). The calculated zero frequency value χ(2) (0) is in good agreement with experiment and another recent LDA calculation. The importance of having accurate and sufficient number of conduction band states is demonstrated. It is also shown that the virtual-hole process in α-quartz is non-negligible. The dispersion curve for χ(2) (ω) up to 10 eV is presented and is found to be very rich in structures.