Julio Larrea Jiménez
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Julio Larrea Jiménez has a total of 95 co-authors. Here are the top co-authors by number of shared publications:
- Elisa Baggio Saitovitch
Centro Brasileiro de Pesquisas Fisicas
4 shared publications - Silke Paschen
Institute of Solid State Physics, TU Wien, Vienna, Austria
4 shared publications - Valentina Martelli
Universidade de São Paulo
4 shared publications - Andrey Prokofiev
Institute of Solid State Physics, Vienna University of Technology, A-1040 Wien, Austria
2 shared publications - Cristhian David Hinostroza Vargas Machuca
Universidade de São Paulo
2 shared publications - Geetha Balakrishnan
University of Warwick
2 shared publications
Latest Publications
- Open Access
- 22 May 2026
- Published by Springer Nature in Nature Communications
- Vol. 17 (1)
Reentrant Landau levels in a Dirac topological insulator
Pentatellurides have emerged as an ideal platform for exploring topological phase transitions and their electronic properties. Positioned at the boundary between a strong and weak topological insulator phase, their low carrier density and linear dispersion enable a three-dimensional Dirac Hamiltonian description. A complete understanding of these materials remains elusive due to unexplained sample variability. In particular, these materials have been shown to host anomalous magnetoresistance including \(\log (B)\)-periodic signals, non-\(\log (B)\) and non-1/B oscillations, in addition to the conventional 1/B quantum oscillations. Differing interpretations invoke many-body effects and there is currently no unified understanding of these oscillations. Here we report non-1/B oscillations in ZrTe5 down to 700 mK and up to 60 T, with a temperature and magnetic field dependence that violates the Lifshitz–Kosevich framework. We show that nonlinear Landau-level back-bending, arising from the interplay of cyclotron energy and strong spin-orbit coupling in a non-interacting Dirac system, captures all observed regimes and provides a foundation for understanding the electron dynamics of Dirac topological insulators beyond the quantum limit.- 22 May 2026
- Published by Springer Nature in Nature Communications
- Vol. 17 (1)
Open AccessReentrant Landau levels in a Dirac topological insulator
Pentatellurides have emerged as an ideal platform for exploring topological phase transitions and their electronic properties. Positioned at the boundary between a strong and weak topological insulator phase, their low carrier density and linear dispersion enable a three-dimensional Dirac Hamiltonian description. A complete understanding of these materials remains elusive due to unexplained sample variability. In particular, these materials have been shown to host anomalous magnetoresistance including \(\log (B)\)-periodic signals, non-\(\log (B)\) and non-1/B oscillations, in addition to the conventional 1/B quantum oscillations. Differing interpretations invoke many-body effects and there is currently no unified understanding of these oscillations. Here we report non-1/B oscillations in ZrTe5 down to 700 mK and up to 60 T, with a temperature and magnetic field dependence that violates the Lifshitz–Kosevich framework. We show that nonlinear Landau-level back-bending, arising from the interplay of cyclotron energy and strong spin-orbit coupling in a non-interacting Dirac system, captures all observed regimes and provides a foundation for understanding the electron dynamics of Dirac topological insulators beyond the quantum limit. - Open Access
- 14 January 2026
- Published by Springer Nature in Nature Physics
- Vol. 22 (2) , 218-224
Emergent topological semimetal from quantum criticality
The electronic topology of a material is generally described by its Bloch states and the associated band structure, and can be altered by electron–electron interactions. In metallic systems, the interactions are usually treated through the concept of quasiparticles. Here we investigate what happens if no well-defined quasiparticles are present and show that a topological semimetal phase can emerge from the material’s quantum critical state. Using the non-centrosymmetric heavy-fermion compound CeRu 4 Sn 6 , which is intrinsically quantum critical, we show that the topological phase exhibits a dome structure as a function of the magnetic field and pressure. To understand these results, we study a Weyl–Kondo semimetal model at a Kondo destruction quantum critical point. Indeed, it exhibits features in the spectral function that can define topological crossings beyond the quasiparticle picture. Our results outline the importance of the interplay of quantum critical fluctuations and symmetry to search for other emergent topological phases.
- 14 January 2026
- Published by Springer Nature in Nature Physics
- Vol. 22 (2) , 218-224
Open AccessEmergent topological semimetal from quantum criticality
The electronic topology of a material is generally described by its Bloch states and the associated band structure, and can be altered by electron–electron interactions. In metallic systems, the interactions are usually treated through the concept of quasiparticles. Here we investigate what happens if no well-defined quasiparticles are present and show that a topological semimetal phase can emerge from the material’s quantum critical state. Using the non-centrosymmetric heavy-fermion compound CeRu 4 Sn 6 , which is intrinsically quantum critical, we show that the topological phase exhibits a dome structure as a function of the magnetic field and pressure. To understand these results, we study a Weyl–Kondo semimetal model at a Kondo destruction quantum critical point. Indeed, it exhibits features in the spectral function that can define topological crossings beyond the quasiparticle picture. Our results outline the importance of the interplay of quantum critical fluctuations and symmetry to search for other emergent topological phases.
- 1 January 2026
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 97 (1)
Two lock-in amplifiers based 3 ω technique: A practical guide for thermal conductivity experiments in bulk samples
The accurate determination of thermal conductivity κ(T) in bulk materials at room temperature and above is crucial for evaluating their compatibility for specific applications. The 3ω technique is an established methodology for studying the thermal conductivity of thin films, becoming particularly suitable in the case of bulk specimens for T ≳ 300 K, where standard stationary techniques require significant corrections for radiative losses. Although this method has been employed in several works, it remains not widely adopted because its implementation demands considerable sophistication, including experiment design, thin film deposition techniques, and choices of the geometry of the current/heat transducer, electronics, and analytical treatment of the signals. Based on a critical review of the technique’s key technical aspects, this work provides practical support for a rapid and user-friendly implementation, from the design phase through to execution and analysis. We release a Python-based graphical user interface that supports a quantitative estimation of the investigated temperature profiles based on the geometrical parameters (width/length) of the deposited transducer (heater/thermometer metal line) before an experiment, guaranteeing an optimal design of the experimental conditions for each given material under scrutiny.
- 1 January 2026
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 97 (1)
Two lock-in amplifiers based 3 ω technique: A practical guide for thermal conductivity experiments in bulk samples
The accurate determination of thermal conductivity κ(T) in bulk materials at room temperature and above is crucial for evaluating their compatibility for specific applications. The 3ω technique is an established methodology for studying the thermal conductivity of thin films, becoming particularly suitable in the case of bulk specimens for T ≳ 300 K, where standard stationary techniques require significant corrections for radiative losses. Although this method has been employed in several works, it remains not widely adopted because its implementation demands considerable sophistication, including experiment design, thin film deposition techniques, and choices of the geometry of the current/heat transducer, electronics, and analytical treatment of the signals. Based on a critical review of the technique’s key technical aspects, this work provides practical support for a rapid and user-friendly implementation, from the design phase through to execution and analysis. We release a Python-based graphical user interface that supports a quantitative estimation of the investigated temperature profiles based on the geometrical parameters (width/length) of the deposited transducer (heater/thermometer metal line) before an experiment, guaranteeing an optimal design of the experimental conditions for each given material under scrutiny.
- 27 December 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (22)
Role of native point defects and Hg impurities in the electronic properties ofWe studied the effects of point defects and Hg impurities in the electronic properties of bismuth iodide $({\mathrm{Bi}}_{4}{\mathrm{I}}_{4})$. Our transport measurements after annealing at different temperatures show that the resistivity of ${\mathrm{Bi}}_{4}{\mathrm{I}}_{4}$ depends on its thermal history, suggesting that the formation of native defects and impurities can shape the temperature dependence of electrical resistivity. Our density functional theory calculations indicate that the bismuth and iodine antisites and the bismuth vacancies are the dominant native point defects. We find that bismuth antisites introduce resonant states in the band edges, while iodine antisites and bismuth vacancies lead to a $n$-type and a $p$-type doping of ${\mathrm{Bi}}_{4}{\mathrm{I}}_{4}$, respectively. The Hg impurities are likely to be found at Bi substitutional sites, giving rise to the $p$-type doping of ${\mathrm{Bi}}_{4}{\mathrm{I}}_{4}$. Overall, our findings indicate that the presence of native point defects and impurities can significantly modify the electronic properties, and, thus, impact the resistivity profile of ${\mathrm{Bi}}_{4}{\mathrm{I}}_{4}$ due to modifications in the amount and type of carriers, and the associated defect (impurity) scattering. Our results suggest possible routes for pursuing fine-tuning of the electronic properties of quasi-one-dimensional quantum materials.- 27 December 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (22)
Role of native point defects and Hg impurities in the electronic properties ofWe studied the effects of point defects and Hg impurities in the electronic properties of bismuth iodide $({\mathrm{Bi}}_{4}{\mathrm{I}}_{4})$. Our transport measurements after annealing at different temperatures show that the resistivity of ${\mathrm{Bi}}_{4}{\mathrm{I}}_{4}$ depends on its thermal history, suggesting that the formation of native defects and impurities can shape the temperature dependence of electrical resistivity. Our density functional theory calculations indicate that the bismuth and iodine antisites and the bismuth vacancies are the dominant native point defects. We find that bismuth antisites introduce resonant states in the band edges, while iodine antisites and bismuth vacancies lead to a $n$-type and a $p$-type doping of ${\mathrm{Bi}}_{4}{\mathrm{I}}_{4}$, respectively. The Hg impurities are likely to be found at Bi substitutional sites, giving rise to the $p$-type doping of ${\mathrm{Bi}}_{4}{\mathrm{I}}_{4}$. Overall, our findings indicate that the presence of native point defects and impurities can significantly modify the electronic properties, and, thus, impact the resistivity profile of ${\mathrm{Bi}}_{4}{\mathrm{I}}_{4}$ due to modifications in the amount and type of carriers, and the associated defect (impurity) scattering. Our results suggest possible routes for pursuing fine-tuning of the electronic properties of quasi-one-dimensional quantum materials.- 3 May 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 109 (17) , 174105
Structural investigation of the quasi-one-dimensional topological insulatorThe bismuth halide undergoes a structural transition around , which separates a high-temperature phase () from a low-temperature phase (). and phases are suggested to host electronic band structures with distinct topological classifications. Rapid quenching was reported to stabilize a metastable at , making possible a comparative study of the physical properties of the two phases in the same low-temperature range. In this work, we present a structural investigation of before and after quenching together with electrical resistivity measurements. We found that rapid cooling does not consistently lead to a metastable , and a quick transition to is observed. As a result, the comparison of putative signatures of different topologies attributed to a specific structural phase should be carefully considered. The observed phase instability is accompanied by an increase in iodine vacancies and by a change in the temperature dependence of electrical resistivity, pointing to native defects as a possible origin of our finding. Density functional theory (DFT) calculations support the scenario that iodine vacancies, together with bismuth antisites and interstitials are among the defects that are more likely to occur in during the growth.- 3 May 2024
- Published by American Physical Society (APS) in Physical Review B
- Vol. 109 (17) , 174105
Structural investigation of the quasi-one-dimensional topological insulatorThe bismuth halide undergoes a structural transition around , which separates a high-temperature phase () from a low-temperature phase (). and phases are suggested to host electronic band structures with distinct topological classifications. Rapid quenching was reported to stabilize a metastable at , making possible a comparative study of the physical properties of the two phases in the same low-temperature range. In this work, we present a structural investigation of before and after quenching together with electrical resistivity measurements. We found that rapid cooling does not consistently lead to a metastable , and a quick transition to is observed. As a result, the comparison of putative signatures of different topologies attributed to a specific structural phase should be carefully considered. The observed phase instability is accompanied by an increase in iodine vacancies and by a change in the temperature dependence of electrical resistivity, pointing to native defects as a possible origin of our finding. Density functional theory (DFT) calculations support the scenario that iodine vacancies, together with bismuth antisites and interstitials are among the defects that are more likely to occur in during the growth.- 7 November 2023
- Published by American Physical Society (APS) in Physical Review B
- Vol. 108 (17) , 174409
Inelastic neutron scattering investigation of the crystal field excitations ofWe present an inelastic neutron scattering study of the crystal electric field (CEF) levels in the intermetallic ferrimagnets ( and Y). In , measurements at reveal two levels at approximately 28.9 and 52.9 meV. Crystal-field calculations including the exchange field from the Co sites account for both of these, as well as the spectrum at temperatures above the spin-reorientation transition at K. In particular, it is found that both a large hexagonal crystal field parameter and are required to reproduce the data, with the latter having a much larger value than that deduced from previous computational and experimental studies. Our study sheds light on the delicate interplay of terms in the rare-earth Hamiltonian of systems, and is therefore expected to stimulate further experimental and computational work on the broader family of rare-earth permanent magnets.- 7 November 2023
- Published by American Physical Society (APS) in Physical Review B
- Vol. 108 (17) , 174409
Inelastic neutron scattering investigation of the crystal field excitations ofWe present an inelastic neutron scattering study of the crystal electric field (CEF) levels in the intermetallic ferrimagnets ( and Y). In , measurements at reveal two levels at approximately 28.9 and 52.9 meV. Crystal-field calculations including the exchange field from the Co sites account for both of these, as well as the spectrum at temperatures above the spin-reorientation transition at K. In particular, it is found that both a large hexagonal crystal field parameter and are required to reproduce the data, with the latter having a much larger value than that deduced from previous computational and experimental studies. Our study sheds light on the delicate interplay of terms in the rare-earth Hamiltonian of systems, and is therefore expected to stimulate further experimental and computational work on the broader family of rare-earth permanent magnets.- 28 July 2021
- Published by American Physical Society (APS) in Physical Review B
- Vol. 104 (3) , 035208
Thermal diffusivity and its lower bound in orthorhombic SnSe
The orthorhombic monochalcogenide SnSe has attracted much attention in recent years as a promising high-temperature thermoelectric material. We present a study of its thermal conductivity and specific heat of SnSe between 2 K and 300 K and quantify its anisotropic thermal diffusivity . For both crystallographic orientations, thermal diffusivity remains above the recently identified Planckian limit (, where is the sound velocity and ) and its anisotropy in is set by the anisotropy of . Comparison with cubic members of the IV-VI family leads to a consistent picture, where the diffusivity in all members of the family is set by the product of , and the ‘melting’ velocity derived from the melting temperature.- 28 July 2021
- Published by American Physical Society (APS) in Physical Review B
- Vol. 104 (3) , 035208
Thermal diffusivity and its lower bound in orthorhombic SnSe
The orthorhombic monochalcogenide SnSe has attracted much attention in recent years as a promising high-temperature thermoelectric material. We present a study of its thermal conductivity and specific heat of SnSe between 2 K and 300 K and quantify its anisotropic thermal diffusivity . For both crystallographic orientations, thermal diffusivity remains above the recently identified Planckian limit (, where is the sound velocity and ) and its anisotropy in is set by the anisotropy of . Comparison with cubic members of the IV-VI family leads to a consistent picture, where the diffusivity in all members of the family is set by the product of , and the ‘melting’ velocity derived from the melting temperature.- Top Cited PapersOpen Access
- 14 April 2021
- Published by Springer Nature in Nature
- Vol. 592 (7854) , 370-375
A quantum magnetic analogue to the critical point of water
At the liquid–gas phase transition in water, the density has a discontinuity at atmospheric pressure; however, the line of these first-order transitions defined by increasing the applied pressure terminates at the critical point1, a concept ubiquitous in statistical thermodynamics2. In correlated quantum materials, it was predicted3 and then confirmed experimentally4,5 that a critical point terminates the line of Mott metal–insulator transitions, which are also first-order with a discontinuous charge carrier density. In quantum spin systems, continuous quantum phase transitions6 have been controlled by pressure7,8, applied magnetic field9,10 and disorder11, but discontinuous quantum phase transitions have received less attention. The geometrically frustrated quantum antiferromagnet SrCu2(BO3)2 constitutes a near-exact realization of the paradigmatic Shastry–Sutherland model12,13,14 and displays exotic phenomena including magnetization plateaus15, low-lying bound-state excitations16, anomalous thermodynamics17 and discontinuous quantum phase transitions18,19. Here we control both the pressure and the magnetic field applied to SrCu2(BO3)2 to provide evidence of critical-point physics in a pure spin system. We use high-precision specific-heat measurements to demonstrate that, as in water, the pressure–temperature phase diagram has a first-order transition line that separates phases with different local magnetic energy densities, and that terminates at an Ising critical point. We provide a quantitative explanation of our data using recently developed finite-temperature tensor-network methods17,20,21,22. These results further our understanding of first-order quantum phase transitions in quantum magnetism, with potential applications in materials where anisotropic spin interactions produce the topological properties23,24 that are useful for spintronic applications.
- 14 April 2021
- Published by Springer Nature in Nature
- Vol. 592 (7854) , 370-375
Top Cited PapersOpen AccessA quantum magnetic analogue to the critical point of water
At the liquid–gas phase transition in water, the density has a discontinuity at atmospheric pressure; however, the line of these first-order transitions defined by increasing the applied pressure terminates at the critical point1, a concept ubiquitous in statistical thermodynamics2. In correlated quantum materials, it was predicted3 and then confirmed experimentally4,5 that a critical point terminates the line of Mott metal–insulator transitions, which are also first-order with a discontinuous charge carrier density. In quantum spin systems, continuous quantum phase transitions6 have been controlled by pressure7,8, applied magnetic field9,10 and disorder11, but discontinuous quantum phase transitions have received less attention. The geometrically frustrated quantum antiferromagnet SrCu2(BO3)2 constitutes a near-exact realization of the paradigmatic Shastry–Sutherland model12,13,14 and displays exotic phenomena including magnetization plateaus15, low-lying bound-state excitations16, anomalous thermodynamics17 and discontinuous quantum phase transitions18,19. Here we control both the pressure and the magnetic field applied to SrCu2(BO3)2 to provide evidence of critical-point physics in a pure spin system. We use high-precision specific-heat measurements to demonstrate that, as in water, the pressure–temperature phase diagram has a first-order transition line that separates phases with different local magnetic energy densities, and that terminates at an Ising critical point. We provide a quantitative explanation of our data using recently developed finite-temperature tensor-network methods17,20,21,22. These results further our understanding of first-order quantum phase transitions in quantum magnetism, with potential applications in materials where anisotropic spin interactions produce the topological properties23,24 that are useful for spintronic applications.
- 14 June 2014
- Published by Physical Society of Japan in Journal of the Physical Society of Japan
- Vol. 83 (6)
Ordered Phases and Quantum Criticality in Cubic Heavy Fermion Compounds
- 14 June 2014
- Published by Physical Society of Japan in Journal of the Physical Society of Japan
- Vol. 83 (6)
Ordered Phases and Quantum Criticality in Cubic Heavy Fermion Compounds
- Open Access
- 28 April 2014
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 43 (6) , 2440-2443
Anisotropic Thermopower of the Kondo Insulator $\hbox {CeRu}_4\hbox {Sn}_6$ CeRu 4 Sn 6- 28 April 2014
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 43 (6) , 2440-2443
Open AccessAnisotropic Thermopower of the Kondo Insulator $\hbox {CeRu}_4\hbox {Sn}_6$ CeRu 4 Sn 6