Lay-Lay Chua
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Lay-Lay Chua has a total of 31 co-authors. Here are the top co-authors by number of shared publications:
Sankaran Sivaramakrishnan
National University of Singapore
5 shared publicationsPerq-Jon Chia
Department of Physics, National University of Singapore, Lower Kent Ridge Road, Singapore 117542, Singapore
4 shared publications- Peter K. H. Ho
Department of Physics, National University of Singapore, Singapore, Singapore
4 shared publications - Andrew Thye Shen Wee
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
3 shared publications Mi Zhou
National University of Singapore
3 shared publicationsShuai Wang
National University of Singapore 1 Department of Physics Lower Kent Ridge Road, Singapore S117542, Singapore
3 shared publications
Latest Publications
- 8 December 2009
- Published by Wiley in Advanced Materials
- Vol. 21 (46) , 4747-4752
Direct Spectroscopic Evidence for a Photodoping Mechanism in Polythiophene and Poly(bithiophene‐alt‐thienothiophene) Organic Semiconductor Thin Films Involving Oxygen and Sorbed Moisture
- 8 December 2009
- Published by Wiley in Advanced Materials
- Vol. 21 (46) , 4747-4752
Direct Spectroscopic Evidence for a Photodoping Mechanism in Polythiophene and Poly(bithiophene‐alt‐thienothiophene) Organic Semiconductor Thin Films Involving Oxygen and Sorbed Moisture
- 4 March 2009
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 102 (9) , 096602
Direct Evidence for the Role of the Madelung Potential in Determining the Work Function of Doped Organic Semiconductors
The work function of a model degenerately doped organic semiconductor -doped poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) can be systematically tuned over an eV-wide range by exchanging excess matrix protons with spectator cations, without altering the organic semiconductor doping level or polaron density. Ultraviolet photoelectron spectroscopy reveals this to arise not from an interface dipole, but from a bulk effect due to a shift in the Madelung potential set up by the local counter- and spectator-ion structure at the polaron sites. Electrostatic modeling of this potential is in agreement with the observed shift in carrier energetics. The spectator cations also cause a systematic shift in electron-phonon coupling and carrier delocalization, as revealed by infrared and Raman phonon modes, and charge-modulated absorption, which can be related to disorder in this potential.- 4 March 2009
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 102 (9) , 096602
Direct Evidence for the Role of the Madelung Potential in Determining the Work Function of Doped Organic Semiconductors
The work function of a model degenerately doped organic semiconductor -doped poly(3,4-ethylenedioxythiophene)–poly(styrenesulfonic acid) can be systematically tuned over an eV-wide range by exchanging excess matrix protons with spectator cations, without altering the organic semiconductor doping level or polaron density. Ultraviolet photoelectron spectroscopy reveals this to arise not from an interface dipole, but from a bulk effect due to a shift in the Madelung potential set up by the local counter- and spectator-ion structure at the polaron sites. Electrostatic modeling of this potential is in agreement with the observed shift in carrier energetics. The spectator cations also cause a systematic shift in electron-phonon coupling and carrier delocalization, as revealed by infrared and Raman phonon modes, and charge-modulated absorption, which can be related to disorder in this potential.- 20 October 2008
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (16) , 162103
Solvent effects and multiple aggregate states in high-mobility organic field-effect transistors based on poly(bithiophene-alt-thienothiophene)
Franck–Condon absorption analysis reveals the existence of several aggregate states in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) thin films which impact their recrystallization and the attainable field-effect mobility . Poor solvents (toluene and mixed-xylenes) lock in both disordered and well-ordered states that cannot be annealed away even in the liquid crystalline phase. This reduces and increases mobility activation energies compared with films from good solvents (chlorobenzene and -dichlorobenzene). Despite its poor solubility characteristics, PBTTT can be ink-jet printed in dilute chlorobenzene, and devices can be operated unencapsulated in ambient, in the dark ( over several days) with only a moderate mobility loss.- 20 October 2008
- Published by AIP Publishing in Applied Physics Letters
- Vol. 93 (16) , 162103
Solvent effects and multiple aggregate states in high-mobility organic field-effect transistors based on poly(bithiophene-alt-thienothiophene)
Franck–Condon absorption analysis reveals the existence of several aggregate states in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) thin films which impact their recrystallization and the attainable field-effect mobility . Poor solvents (toluene and mixed-xylenes) lock in both disordered and well-ordered states that cannot be annealed away even in the liquid crystalline phase. This reduces and increases mobility activation energies compared with films from good solvents (chlorobenzene and -dichlorobenzene). Despite its poor solubility characteristics, PBTTT can be ink-jet printed in dilute chlorobenzene, and devices can be operated unencapsulated in ambient, in the dark ( over several days) with only a moderate mobility loss.- 15 September 2008
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 129 (11) , 114702
Deoxidation of graphene oxide nanosheets to extended graphenites by “unzipping” elimination
Low-temperature scanning tunneling microscopy on alkyl-surface-functionalized graphene oxide nanosheets reveals the formation of low-dimensional graphenite nanostructures with extended -conjugation at deoxidation temperatures above . The elimination of these alkyl chains from the surface of the nanosheets does not occur uniformly, but in distinctive patterns that correspond to the formation of an underlying network of graphenite one-dimensional “tracks” and “dots.” Atomic-resolution imaging of these graphenite regions reveals a defective honeycomb lattice characteristic of single-layer graphenes. These extended graphenite structures percolate the nanosheet even for moderate levels of deoxidation and regraphenization of the basal plane. The formation of extended conjugation indicates a regioselective rather than random elimination of the oxygen atoms and alkyl chains. The resultant network morphology allows bandlike transport of charge carriers across the sheets despite defects and disorder. The sub-meV apparent activation energies for the field-effect mobilities at low temperatures for both electrons and holes rule out significant electron-phonon coupling. This suggests a remarkable potential for electronic applications of these solution-processable functionalized graphene oxide nanosheets.- 15 September 2008
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 129 (11) , 114702
Deoxidation of graphene oxide nanosheets to extended graphenites by “unzipping” elimination
Low-temperature scanning tunneling microscopy on alkyl-surface-functionalized graphene oxide nanosheets reveals the formation of low-dimensional graphenite nanostructures with extended -conjugation at deoxidation temperatures above . The elimination of these alkyl chains from the surface of the nanosheets does not occur uniformly, but in distinctive patterns that correspond to the formation of an underlying network of graphenite one-dimensional “tracks” and “dots.” Atomic-resolution imaging of these graphenite regions reveals a defective honeycomb lattice characteristic of single-layer graphenes. These extended graphenite structures percolate the nanosheet even for moderate levels of deoxidation and regraphenization of the basal plane. The formation of extended conjugation indicates a regioselective rather than random elimination of the oxygen atoms and alkyl chains. The resultant network morphology allows bandlike transport of charge carriers across the sheets despite defects and disorder. The sub-meV apparent activation energies for the field-effect mobilities at low temperatures for both electrons and holes rule out significant electron-phonon coupling. This suggests a remarkable potential for electronic applications of these solution-processable functionalized graphene oxide nanosheets.- 5 September 2008
- Published by Wiley in Advanced Materials
- Vol. 20 (18) , 3440-3446
Band‐like Transport in Surface‐Functionalized Highly Solution‐Processable Graphene Nanosheets
- 5 September 2008
- Published by Wiley in Advanced Materials
- Vol. 20 (18) , 3440-3446
Band‐like Transport in Surface‐Functionalized Highly Solution‐Processable Graphene Nanosheets
- 17 December 2006
- Published by Springer Nature in Nature Materials
- Vol. 6 (2) , 149-155
Controlled insulator-to-metal transformation in printable polymer composites with nanometal clusters
Although organic semiconductors have received the most attention, the development of compatible passive elements, such as interconnects and electrodes, is also central to plastic electronics. For this, ligand-protected metal-cluster films have been shown to anneal at low temperatures below 250∘C to highly conductive metal films, but they suffer from cracking and inadequate substrate adhesion. Here, we report printable metal-cluster–polymer nanocomposites that anneal to a controlled-percolation nanostructure without complete sintering of the metal clusters. This overcomes the previous challenges while still retaining the desired low transformation temperatures. Highly water- and alcohol-soluble gold clusters (75 mg ml−1) were synthesized and homogeneously dispersed into poly(3,4-ethylenedioxythiophene) to give a material with annealed d.c. conductivity tuneable between 10−4 and 105 S cm−1. These composites can inject holes efficiently into all-printed polymer organic transistors. The insulator–metal transformation can also be electrically induced at 1 MV cm−1, suggesting possible memory applications.
- 17 December 2006
- Published by Springer Nature in Nature Materials
- Vol. 6 (2) , 149-155
Controlled insulator-to-metal transformation in printable polymer composites with nanometal clusters
Although organic semiconductors have received the most attention, the development of compatible passive elements, such as interconnects and electrodes, is also central to plastic electronics. For this, ligand-protected metal-cluster films have been shown to anneal at low temperatures below 250∘C to highly conductive metal films, but they suffer from cracking and inadequate substrate adhesion. Here, we report printable metal-cluster–polymer nanocomposites that anneal to a controlled-percolation nanostructure without complete sintering of the metal clusters. This overcomes the previous challenges while still retaining the desired low transformation temperatures. Highly water- and alcohol-soluble gold clusters (75 mg ml−1) were synthesized and homogeneously dispersed into poly(3,4-ethylenedioxythiophene) to give a material with annealed d.c. conductivity tuneable between 10−4 and 105 S cm−1. These composites can inject holes efficiently into all-printed polymer organic transistors. The insulator–metal transformation can also be electrically induced at 1 MV cm−1, suggesting possible memory applications.
- 23 August 2006
- Published by American Chemical Society (ACS) in Langmuir
- Vol. 22 (20) , 8587-8594
Large Damage Threshold and Small Electron Escape Depth in X-ray Absorption Spectroscopy of a Conjugated Polymer Thin Film
The information depth of near-edge X-ray absorption fine structure spectroscopy in the total electron yield mode (TEY-NEXAFS) is given by the escape depth of the TEY electrons zTEY. This is determined by the effective ranges both of the inelastically scattered secondary electrons and of the primary excited electron before they thermalize below the vacuum level. For regioregular poly(3-hexylthiophene) (rreg-P3HT) thin films, we have measured the total electron emission efficiency to be 0.028 ± 0.005 e/ph at an incident photon energy of 320 eV. The range of the primary electron was computed using optical dielectric-loss theory to be 7.5 nm. The range of the secondary electrons was then found by modeling to be 3.0 nm. This gives zTEY to be 2.5 nm, which is considerably less than the often-assumed value of 10 nm in the literature. It is also considerably smaller than the computed electron−electron scattering inelastic mean free path in the material, which suggests the predominance of electron−phonon scattering. Thus, TEY-NEXAFS has sufficient surface sensitivity to probe the frontier molecular layers of these organic conjugated polymers. In a second aspect of this report, the rreg-P3HT films have been characterized by in-situ core and valence photoemission spectroscopies and by ex-situ microattenuated total-reflection vibrational spectroscopy as a function of irradiation dose. No damage was observed in composition, bonding, orientation, and surface morphology under typical TEY-NEXAFS spectral acquisition conditions. For an integrated TEY that exceeds 2 × 10-3 C cm-2, however, the material degrades via alkyl side-chain dehydrogenation to unsaturated units, cross linking, ring opening of the backbone, and sulfur extrusion. Given that secondary electrons are the dominant cause of radiation damage, this exposure threshold measured by integrated TEY should also be valid at other X-ray energies.
- 23 August 2006
- Published by American Chemical Society (ACS) in Langmuir
- Vol. 22 (20) , 8587-8594
Large Damage Threshold and Small Electron Escape Depth in X-ray Absorption Spectroscopy of a Conjugated Polymer Thin Film
The information depth of near-edge X-ray absorption fine structure spectroscopy in the total electron yield mode (TEY-NEXAFS) is given by the escape depth of the TEY electrons zTEY. This is determined by the effective ranges both of the inelastically scattered secondary electrons and of the primary excited electron before they thermalize below the vacuum level. For regioregular poly(3-hexylthiophene) (rreg-P3HT) thin films, we have measured the total electron emission efficiency to be 0.028 ± 0.005 e/ph at an incident photon energy of 320 eV. The range of the primary electron was computed using optical dielectric-loss theory to be 7.5 nm. The range of the secondary electrons was then found by modeling to be 3.0 nm. This gives zTEY to be 2.5 nm, which is considerably less than the often-assumed value of 10 nm in the literature. It is also considerably smaller than the computed electron−electron scattering inelastic mean free path in the material, which suggests the predominance of electron−phonon scattering. Thus, TEY-NEXAFS has sufficient surface sensitivity to probe the frontier molecular layers of these organic conjugated polymers. In a second aspect of this report, the rreg-P3HT films have been characterized by in-situ core and valence photoemission spectroscopies and by ex-situ microattenuated total-reflection vibrational spectroscopy as a function of irradiation dose. No damage was observed in composition, bonding, orientation, and surface morphology under typical TEY-NEXAFS spectral acquisition conditions. For an integrated TEY that exceeds 2 × 10-3 C cm-2, however, the material degrades via alkyl side-chain dehydrogenation to unsaturated units, cross linking, ring opening of the backbone, and sulfur extrusion. Given that secondary electrons are the dominant cause of radiation damage, this exposure threshold measured by integrated TEY should also be valid at other X-ray energies.