Jiajun Deng

All-optical memristors possess light-sensing and storage capabilities while simultaneously simulating human synaptic functions, demonstrating immense potential in the field of brain-inspired computing for realizing bionic synapses and brain-like intelligence. In this work, we successfully produced ε-Ga₂O₃ films, ε/β-Ga₂O₃ mixed-phase films, and β-Ga₂O₃ films via chemical vapor deposition (CVD). The optical output and optical response characteristics of the thin films are investigated under 254 nm and 365 nm lasers. The CVD-grown ε-Ga₂O₃ is found to process a small amount of defects and insignificant memristive properties and the β-Ga₂O₃ obtained from the annealing of ε-Ga₂O₃ exhibits superior crystal quality but lacks memristive properties, while the ε/β-Ga₂O₃ mixed-phase films grown directly by CVD contain a fair amount of defects and demonstrate persistent resistance retention exceeding 104 s. Based on the excellent memristive properties of ε/β-Ga₂O₃ mixed-phase films, we conducted experiments simulating optical synapses. By adjusting optical pulse parameters (intensity, repetition rate, and duration), we successfully modeled the short-term plasticity (STP) and long-term plasticity (LTP) observed in biological synapses. Experiments confirm that light stimulation can effectively induce synaptic behaviors, such as the progressive conversion of short-term memory (STM) into long-term memory (LTM), and further fully reproduce the neuroplasticity process of “learning-forgetting-relearning.” This study demonstrates a photoconductive synapse memristor based on the wide-bandgap material gallium oxide, exhibiting exceptional air stability with sustained photoconductivity maintained for over a year. This study provides new insights into the practical application feasibility of all-optical artificial synapses based on gallium oxide.

Structures of non-stoichiometric Mo_xS_y clusters (x = 2–4; y = 2–10) were studied by density functional calculations with global optimization. Besides 1T phase like structures, a novel regular grid structure in which Mo atoms are well separated by S atoms was found, which might be used as a building-block to construct a new type of two-dimensional molybdenum sulfide monolayer. The hydrogen molecule prefers to be adsorbed onto Mo atoms rather than S atoms, and Mo atoms with less S coordination have a higher ability to adsorb H₂. In addition, the reaction pathways for H₂ dissociation were studied on two clusters with the highest H₂ adsorption energy (Mo₂S₄ and Mo₃S₃). The vacant bridge site of Mo–Mo in S-deficient clusters, which corresponds to the sulfur vacancy in the bulk phase MoS₂, is favored by H atom adsorption and plays an important role in the H atom transfer on Mo_xS_y clusters. Our results provide a new aspect to understand the reason why S defect in MoS₂ and MoS₂ with an Mo-edge could enhance the catalytic performance in the hydrogen evolution reaction.

Stoichiometric (MoS₂)_n clusters (n = 1–6) were systematically studied by density functional theory calculations with hybrid B3LYP and pure GGA PW91 functionals.

Fe/(Ga,Mn)As heterostructures were fabricated by all molecular-beam epitaxy.Double-crystal X-ray diffraction and high-resolution cross-sectional transmission electron micrographs show that the Fe layer has a well ordered crystal orientation and an abrupt interface.The different magnetic behavior between the Fe layer and(Ga, Mn)As layer is observed by superconducting quantum interference device magnetometry.X-ray photoelectron spectroscopy measurements indicate no Fe_2As and Fe-Ga-As compounds,i.e.,no dead magnetic layer at the interface, which strongly affects the magnetic proximity and the polarization of the Mn ion in a thin(Ga,Mn)As region near the interface of the Fe/(Ga,Mn)As heterostructure.