Lambert K. van Vugt
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Lambert K. van Vugt has a total of 5 co-authors. Here are the top co-authors by number of shared publications:
Daniël Vanmaekelbergh
Condensed Matter and Interfaces, Debye Institute, Utrecht University, P.O. Box 80 000, 3508 TA Utrecht, The Netherlands
2 shared publicationsAarnoud L. Roest
Contribution from the Debye Institute, Condensed Matter and Interfaces, Utrecht University, Post Office Box 80 000, 3508 TA Utrecht, The Netherlands, Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands, and Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1 2678 JK Delft, The Netherlands
1 shared publicationErik P. A. M. Bakkers
Contribution from the Debye Institute, Condensed Matter and Interfaces, Utrecht University, Post Office Box 80 000, 3508 TA Utrecht, The Netherlands, Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands, and Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1 2678 JK Delft, The Netherlands
1 shared publicationSandra J. Veen
Contribution from the Debye Institute, Condensed Matter and Interfaces, Utrecht University, Post Office Box 80 000, 3508 TA Utrecht, The Netherlands, Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands, and Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1 2678 JK Delft, The Netherlands
1 shared publicationSven Rühle
Condensed Matter and Interfaces, Debye Institute, Utrecht University, P.O. Box 80 000, 3508 TA Utrecht, The Netherlands
1 shared publication
Latest Publications
- 10 November 2006
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (12) , 2707-2711
Phase-Correlated Nondirectional Laser Emission from the End Facets of a ZnO Nanowire
We investigated the laser emission from individual ZnO nanowires and observed an interference pattern due to coherent laser emission from the wire end facets. Comparison with numerical simulations shows that the laser light is emitted nearly spherically from the wire ends. The energy spacing between sharp lasing modes scales with the inverse length of the nanowire; thus, laser emission peaks correspond to Fabry−Pérot modes of the nanowire cavity.
- 10 November 2006
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 6 (12) , 2707-2711
Phase-Correlated Nondirectional Laser Emission from the End Facets of a ZnO Nanowire
We investigated the laser emission from individual ZnO nanowires and observed an interference pattern due to coherent laser emission from the wire end facets. Comparison with numerical simulations shows that the laser light is emitted nearly spherically from the wire ends. The energy spacing between sharp lasing modes scales with the inverse length of the nanowire; thus, laser emission peaks correspond to Fabry−Pérot modes of the nanowire cavity.
- 11 August 2005
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 127 (35) , 12357-12362
Increase of the Photoluminescence Intensity of InP Nanowires by Photoassisted Surface Passivation
As-grown single-crystal InP nanowires, covered with a surface oxide, show a photoluminescence efficiency that strongly varies from wire to wire. We show that the luminescence efficiency of single-crystal InP nanowires can be improved by photoassisted wet chemical etching in a butanol solution containing HF and the indium-coordinating ligand trioctylphosphine oxide. Electron-hole photogeneration, electron scavenging, and oxidative dissolution combined with surface passivation by the indium-coordinating ligand are essential elements to improve the luminescence efficiency. Time traces of the luminescence of surface-passivated wires show strong oscillations resembling the on-off blinking observed with single quantum dots. These results reflect the strong influence of a single or a few nonradiative recombination center(s) on the luminescence properties of an entire wire.
- 11 August 2005
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 127 (35) , 12357-12362
Increase of the Photoluminescence Intensity of InP Nanowires by Photoassisted Surface Passivation
As-grown single-crystal InP nanowires, covered with a surface oxide, show a photoluminescence efficiency that strongly varies from wire to wire. We show that the luminescence efficiency of single-crystal InP nanowires can be improved by photoassisted wet chemical etching in a butanol solution containing HF and the indium-coordinating ligand trioctylphosphine oxide. Electron-hole photogeneration, electron scavenging, and oxidative dissolution combined with surface passivation by the indium-coordinating ligand are essential elements to improve the luminescence efficiency. Time traces of the luminescence of surface-passivated wires show strong oscillations resembling the on-off blinking observed with single quantum dots. These results reflect the strong influence of a single or a few nonradiative recombination center(s) on the luminescence properties of an entire wire.