Chigineva A. B.
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Chigineva A. B. has a total of 7 co-authors. Here are the top co-authors by number of shared publications:
- I. V. Samartsev
Lobachevsky State University, Nizhny Novgorod, Russia
2 shared publications - Valentina E. Kotomina
Нижегородский государственный университет им. Н.И. Лобачевского, Нижний Новгород, Россия
2 shared publications - Zhidyaev K. S.
Нижегородский государственный университет им. Н.И. Лобачевского, Нижний Новгород, Россия
2 shared publications Baidus N. V.
1 shared publicationC.м. Некоркин
Нижегородский государственный университет им. Н.И. Лобачевского, Нижний Новгород, Россия
1 shared publication- N. V. Baidus
Нижегородский государственный университет им. Н.И. Лобачевского, Нижний Новгород, Россия
1 shared publication
Latest Publications
- 1 January 2022
- Published by Ioffe Institute Russian Academy of Sciences in Semiconductors
- Vol. 56 (1) , 132
Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology. Keywords: thyristors, blocking voltage, sulfide passivation, gallium arsenide, mesastructure.
- 1 January 2022
- Published by Ioffe Institute Russian Academy of Sciences in Semiconductors
- Vol. 56 (1) , 132
Influence of chemical treatment and surface topology on the blocking voltage of GaAs thyristor mesastructures, grown by MOCVD
The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology. Keywords: thyristors, blocking voltage, sulfide passivation, gallium arsenide, mesastructure.
- 1 January 2022
- Published by Ioffe Institute Russian Academy of Sciences in Физика и техника полупроводников
- Vol. 56 (1) , 134
Влияние химической обработки и топологии поверхности на блокирующее напряжение GaAs тиристорных мезаструктур, выращенных методом ГФЭ МОС
The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology.
- 1 January 2022
- Published by Ioffe Institute Russian Academy of Sciences in Физика и техника полупроводников
- Vol. 56 (1) , 134
Влияние химической обработки и топологии поверхности на блокирующее напряжение GaAs тиристорных мезаструктур, выращенных методом ГФЭ МОС
The effect of sulfide passivation (chemical treatment in a peroxide-sulfur etchant and in a solution of Na2S in isopropanol) and complication of the profile of the lateral surface of thyristor mesastructures on the blocking ability of GaAs thyristor mesastructures is investigated. It is shown that the blocking voltage of the chips increases several times both after chemical treatment of the surface and with the complication of the surface topology.