Libo Zhang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Libo Zhang has a total of 186 co-authors. Here are the top co-authors by number of shared publications:
- Xiaoshuang Chen
College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, China
19 shared publications - Lin Wang
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, CHINA
16 shared publications Kening Xiao
College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, China
14 shared publicationsLi Han
College of Optical and Electronic Technology, China Jiliang University Hangzhou Hangzhou China
11 shared publicationsShi Zhang
College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, China
10 shared publicationsKaixuan Zhang
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences
9 shared publications
Latest Publications
- Open Access
- 28 October 2026
- Published by Springer Nature in Nature Communications
Detector-mediated cross-spectral prediction with a gate-tunable van der Waals tunneling photodetector
Cross-spectral prediction infers information in one spectral band from observations acquired in another. This task is ill-posed because multiple target-band signals can be compatible with a single source observation. Image-space supervision alone does not test consistency with a measured detector response. Here, we incorporate the calibrated response manifold of a gate-tunable PdSe 2 /h-BN/WSe 2 photodetector as a differentiable detector-response layer. Parameterized by wavelength, optical power, source-drain bias and gate voltage, this layer constrains the magnitude and polarity of the predicted detector response while preserving image fidelity. In visible-to-infrared cross-spectral prediction, the framework achieves a peak signal-to-noise ratio of 26.58 dB and a structural similarity index of 0.89. It also reduces detector-space error relative to architecture-only and response-corrupted controls. Post-inference measurements further evaluate 64-mask response consistency after 1310 nm optical re-encoding. These results establish detector-mediated cross-spectral prediction as a framework that combines image reconstruction with measured response-space consistency under the tested conditions.
- 28 October 2026
- Published by Springer Nature in Nature Communications
Open AccessDetector-mediated cross-spectral prediction with a gate-tunable van der Waals tunneling photodetector
Cross-spectral prediction infers information in one spectral band from observations acquired in another. This task is ill-posed because multiple target-band signals can be compatible with a single source observation. Image-space supervision alone does not test consistency with a measured detector response. Here, we incorporate the calibrated response manifold of a gate-tunable PdSe 2 /h-BN/WSe 2 photodetector as a differentiable detector-response layer. Parameterized by wavelength, optical power, source-drain bias and gate voltage, this layer constrains the magnitude and polarity of the predicted detector response while preserving image fidelity. In visible-to-infrared cross-spectral prediction, the framework achieves a peak signal-to-noise ratio of 26.58 dB and a structural similarity index of 0.89. It also reduces detector-space error relative to architecture-only and response-corrupted controls. Post-inference measurements further evaluate 64-mask response consistency after 1310 nm optical re-encoding. These results establish detector-mediated cross-spectral prediction as a framework that combines image reconstruction with measured response-space consistency under the tested conditions.
- 9 August 2026
- Published by Wiley in Advanced Functional Materials
- Vol. 36 (72)
Multidimensional Sensing in Flexible Violet Phosphorus Photodetectors Driven by the Bulk Photovoltaic Effect
The bulk photovoltaic effect (BPVE) generates zero bias photocurrents in systems with broken inversion symmetry, offering a junction free pathway for self‐powered optoelectronic devices and conceptually overcoming the Shockley‐Queisser efficiency limit of conventional junction based devices. However, achieving high performance self‐powered photodetection across a broadband spectrum remains challenging, and low dimensional quantum materials that enable efficient multi‐mechanism photoconversion with superior optoelectronic properties remain scarce. Here, we devise a flexible, bio‐inspired device architecture on polyethylene terephthalate (PET) substrates that synergistically leverages the intrinsic properties of few‐layer violet phosphorus (VP)—a material with localized inversion symmetry breaking—to enable broadband multidimensional sensing, thereby surpassing the limitations of conventional junction‐based devices. By synergizing the unique low symmetry crystal structure of few‐layer VP with a flexible device architecture, we achieve a substantial zero‐bias photocurrent of 20 µA, a high responsivity of 0.01 A/W, and a polarization ratio (PR) of 5.5 at 650 nm. The polarization imaging system constructed with this detector achieves high contrast imaging and image processing of surface polarization states by capturing multi‐angle polarization images and calculating Stokes parameters. This work establishes a generalizable bionic strategy for engineering high performance, self‐powered polarization selective photodetectors for next generation intelligent imaging, remote sensing, and integrated photonic systems.
- 9 August 2026
- Published by Wiley in Advanced Functional Materials
- Vol. 36 (72)
Multidimensional Sensing in Flexible Violet Phosphorus Photodetectors Driven by the Bulk Photovoltaic Effect
The bulk photovoltaic effect (BPVE) generates zero bias photocurrents in systems with broken inversion symmetry, offering a junction free pathway for self‐powered optoelectronic devices and conceptually overcoming the Shockley‐Queisser efficiency limit of conventional junction based devices. However, achieving high performance self‐powered photodetection across a broadband spectrum remains challenging, and low dimensional quantum materials that enable efficient multi‐mechanism photoconversion with superior optoelectronic properties remain scarce. Here, we devise a flexible, bio‐inspired device architecture on polyethylene terephthalate (PET) substrates that synergistically leverages the intrinsic properties of few‐layer violet phosphorus (VP)—a material with localized inversion symmetry breaking—to enable broadband multidimensional sensing, thereby surpassing the limitations of conventional junction‐based devices. By synergizing the unique low symmetry crystal structure of few‐layer VP with a flexible device architecture, we achieve a substantial zero‐bias photocurrent of 20 µA, a high responsivity of 0.01 A/W, and a polarization ratio (PR) of 5.5 at 650 nm. The polarization imaging system constructed with this detector achieves high contrast imaging and image processing of surface polarization states by capturing multi‐angle polarization images and calculating Stokes parameters. This work establishes a generalizable bionic strategy for engineering high performance, self‐powered polarization selective photodetectors for next generation intelligent imaging, remote sensing, and integrated photonic systems.
- 13 July 2026
- Published by Wiley in Laser & Photonics Reviews
- Vol. 20 (21)
Miniaturized Spectral Sensor based on Gate‐Tunable PdSe 2 /MoSe 2 Heterostructure Integrated on a Fiber Endface
Wavelength‐division multiplexing (WDM) continues to drive the need for optical receivers with compact and integrated spectral discrimination. Conventional demultiplexers based on gratings, or filter arrays remain bulky, sensitive to alignment, and difficult to co‐package with fibers. Here we report a proof‐of‐concept fiber‐endface heterojunction spectral sensor (FIHSS) with an electrically tunable transport‐mediated spectral response. In the continuous regime, the FIHSS reconstructs spectra over the wavelength of 1510–1610 nm with a root mean square error of 0.11 relative to a commercial spectrometer. In the discrete regime, it resolves CWDM‐type channels with wavelength spacings down to 1 nm and channel power ratios from 1:1 to 1:100. Further, benefiting from a robust fabrication process that shields the vdW layers from developer exposure, rapid rise (155 µs) and decay times (125 µs) are obtained, representing an outcome one order of magnitude faster than the values currently in the literature. Ultracompact device structure, free from external optical and mechanical modules, makes the FIHSS a promising configuration for portable spectrometer applications.
- 13 July 2026
- Published by Wiley in Laser & Photonics Reviews
- Vol. 20 (21)
Miniaturized Spectral Sensor based on Gate‐Tunable PdSe 2 /MoSe 2 Heterostructure Integrated on a Fiber Endface
Wavelength‐division multiplexing (WDM) continues to drive the need for optical receivers with compact and integrated spectral discrimination. Conventional demultiplexers based on gratings, or filter arrays remain bulky, sensitive to alignment, and difficult to co‐package with fibers. Here we report a proof‐of‐concept fiber‐endface heterojunction spectral sensor (FIHSS) with an electrically tunable transport‐mediated spectral response. In the continuous regime, the FIHSS reconstructs spectra over the wavelength of 1510–1610 nm with a root mean square error of 0.11 relative to a commercial spectrometer. In the discrete regime, it resolves CWDM‐type channels with wavelength spacings down to 1 nm and channel power ratios from 1:1 to 1:100. Further, benefiting from a robust fabrication process that shields the vdW layers from developer exposure, rapid rise (155 µs) and decay times (125 µs) are obtained, representing an outcome one order of magnitude faster than the values currently in the literature. Ultracompact device structure, free from external optical and mechanical modules, makes the FIHSS a promising configuration for portable spectrometer applications.
- 21 April 2026
- Published by Wiley in Advanced Quantum Technologies
- Vol. 9 (4)
Novel States of Matter in Quantum Materials Under High Pressure
High pressure, as a fundamental thermodynamic parameter, can be used as a clean and efficient tool to regulate interatomic distances in quantum materials, enabling precise control of lattice structure, electron correlation, spin–orbit coupling, and band topology without introducing additional chemical impurities. In this review, we summarize that high‐pressure changes in lattice symmetry, orbital hybridization, band structure, magnetic order, and electron–phonon coupling induce the emergence of new quantum states. We also distinguish that high pressure not only compresses lattice structures, but also enhances quantum effects that lead to exotic states, including unconventional superconductivity with elevated transition temperatures, disproportionate charge‐density waves, electron‐correlated driven Mott insulators, topologically protected phases versus stable topologically protected states, and fractional excited quantum spin liquids. In addition, we reconcile the contradictory experimental results in the current research field, such as the nonmonotonic variation of superconducting transition temperature with pressure in kagome metals and the controversial topological phase transition conditions in TaAs. Finally, we outline the potential applications of high‐pressure technologies, including high‐temperature superconductors, quantum computing, and emerging materials.
- 21 April 2026
- Published by Wiley in Advanced Quantum Technologies
- Vol. 9 (4)
Novel States of Matter in Quantum Materials Under High Pressure
High pressure, as a fundamental thermodynamic parameter, can be used as a clean and efficient tool to regulate interatomic distances in quantum materials, enabling precise control of lattice structure, electron correlation, spin–orbit coupling, and band topology without introducing additional chemical impurities. In this review, we summarize that high‐pressure changes in lattice symmetry, orbital hybridization, band structure, magnetic order, and electron–phonon coupling induce the emergence of new quantum states. We also distinguish that high pressure not only compresses lattice structures, but also enhances quantum effects that lead to exotic states, including unconventional superconductivity with elevated transition temperatures, disproportionate charge‐density waves, electron‐correlated driven Mott insulators, topologically protected phases versus stable topologically protected states, and fractional excited quantum spin liquids. In addition, we reconcile the contradictory experimental results in the current research field, such as the nonmonotonic variation of superconducting transition temperature with pressure in kagome metals and the controversial topological phase transition conditions in TaAs. Finally, we outline the potential applications of high‐pressure technologies, including high‐temperature superconductors, quantum computing, and emerging materials.
- Open Access
- 9 April 2026
- Published by Springer Nature in Nature Communications
- Vol. 17 (1)
Polarization Photovoltage Transistor enabling Amplified Responsivity and Sensitivity
With the rapid advancement of multi-dimensional detection, there is an urgent demand for next-generation polarization detectors capable of achieving high responsivity, fast speed, and strong polarization sensitivity, metrics that are typically limited by fundamental trade-offs. Two-dimensional (2D) materials offer a promising platform, yet their weak intrinsic anisotropy constrains polarization ratio (PR) and overall device performance. Here, we report a mid-infrared (MIR) polarization photovoltage field-effect transistor (PPFET) based on black phosphorus/molybdenum disulfide (BP/MoS2) heterostructures that combines polarization detection and amplification within a single architecture. By exploiting gate-tunable transconductance in the linear amplification region, the device achieves a PR up to 510 via a “stretching” mechanism, while maintaining a polarization angle sensitivity (PAS) up to ~46.57 mA/(W·degree) and response times down to ~0.8 μs under 3.5 μm illumination. This combination of high polarization sensitivity, responsivity, and speed establishes PPFETs as a powerful platform for high-performance MIR polarization detection and paves the way for compact, high-precision imaging systems.
- 9 April 2026
- Published by Springer Nature in Nature Communications
- Vol. 17 (1)
Open AccessPolarization Photovoltage Transistor enabling Amplified Responsivity and Sensitivity
With the rapid advancement of multi-dimensional detection, there is an urgent demand for next-generation polarization detectors capable of achieving high responsivity, fast speed, and strong polarization sensitivity, metrics that are typically limited by fundamental trade-offs. Two-dimensional (2D) materials offer a promising platform, yet their weak intrinsic anisotropy constrains polarization ratio (PR) and overall device performance. Here, we report a mid-infrared (MIR) polarization photovoltage field-effect transistor (PPFET) based on black phosphorus/molybdenum disulfide (BP/MoS2) heterostructures that combines polarization detection and amplification within a single architecture. By exploiting gate-tunable transconductance in the linear amplification region, the device achieves a PR up to 510 via a “stretching” mechanism, while maintaining a polarization angle sensitivity (PAS) up to ~46.57 mA/(W·degree) and response times down to ~0.8 μs under 3.5 μm illumination. This combination of high polarization sensitivity, responsivity, and speed establishes PPFETs as a powerful platform for high-performance MIR polarization detection and paves the way for compact, high-precision imaging systems.
- Open Access
- 1 April 2026
- Published by Springer Nature in Research Square
Symmetry-Breaking-Driven Terahertz Nonlinearity in Topological van der Waals Heterostructures for Broadband Wireless Communication
The development of high-performance nonlinear mixers is a prerequisite for frequency down-conversion and signal processing in the burgeoning era of 6G terahertz (THz) technology. However, conventional terahertz mixers often suffer from the impossible trinity of high local oscillator power, cryogenic cooling requirement, and limited intermediate frequency bandwidths. Here, we demonstrate that vertical van der Waals heterostructures integrating topological Dirac semimetal NiTe2 and graphene exhibit giant room-temperature terahertz nonlinear response driven by symmetry-breaking-induced skew scattering at topological surface states. This intrinsic nonlinear mechanism enables efficient heterodyne frequency conversion without external bias or sophisticated circuitry. The fabricated devices achieve an unprecedented intermediate frequency bandwidth exceeding 108 GHz and a minimum detectable power below − 25 dBm at room temperature. Leveraging the broadband response, we demonstrate stable frequency down-conversion and coherent signal transmission over 800-meter free-space links and wireless image transfer with high fidelity, confirming the capability for real-world digital communication. The passive, scalable architecture of topological heterostructure mixers offers a materials-driven pathway toward low-power, chip-integrated terahertz transceivers for 6G networks and airborne communication platforms.
- 1 April 2026
- Published by Springer Nature in Research Square
Open AccessSymmetry-Breaking-Driven Terahertz Nonlinearity in Topological van der Waals Heterostructures for Broadband Wireless Communication
The development of high-performance nonlinear mixers is a prerequisite for frequency down-conversion and signal processing in the burgeoning era of 6G terahertz (THz) technology. However, conventional terahertz mixers often suffer from the impossible trinity of high local oscillator power, cryogenic cooling requirement, and limited intermediate frequency bandwidths. Here, we demonstrate that vertical van der Waals heterostructures integrating topological Dirac semimetal NiTe2 and graphene exhibit giant room-temperature terahertz nonlinear response driven by symmetry-breaking-induced skew scattering at topological surface states. This intrinsic nonlinear mechanism enables efficient heterodyne frequency conversion without external bias or sophisticated circuitry. The fabricated devices achieve an unprecedented intermediate frequency bandwidth exceeding 108 GHz and a minimum detectable power below − 25 dBm at room temperature. Leveraging the broadband response, we demonstrate stable frequency down-conversion and coherent signal transmission over 800-meter free-space links and wireless image transfer with high fidelity, confirming the capability for real-world digital communication. The passive, scalable architecture of topological heterostructure mixers offers a materials-driven pathway toward low-power, chip-integrated terahertz transceivers for 6G networks and airborne communication platforms.
- Top Cited Papers
- 27 February 2026
- Published by Springer Nature in Nature Electronics
- Vol. 9 (2) , 140-151
An all-in-one Hall rectenna with a bandwidth over 100 GHz
- 27 February 2026
- Published by Springer Nature in Nature Electronics
- Vol. 9 (2) , 140-151
Top Cited PapersAn all-in-one Hall rectenna with a bandwidth over 100 GHz
- Open Access
- 26 February 2026
- Published by Wiley in Advanced Science
- Vol. 13 (20) , e20919
Interfacial Synergy in a Band‐Aligned Low‐Dimensional Heterojunction Toward Broadband Photodetection
Monolithic integration of sensing, imaging, and communication from visible to terahertz bands on a single chip remains challenging as efficient detection across such disparate energies demands stringent, often incompatible material properties. However, conventional semiconductors suffer from intrinsic bandgap limitations or require cryogenic cooling, while existing low‐dimensional heterojunctions often struggle to synergize multiband response kinetics and suppress interfacial carrier recombination. Here, we demonstrate a band‐aligned low‐dimensional heterojunction based on Ta 2 NiSe 5 and Sb 2 Te 3 that leverages interfacial synergy to unify complementary photoresponse pathways, thereby enabling ultrabroadband and low‐noise photodetection spanning across visible to terahertz regimes. The device delivers stable responsivities of up to 0.19 A·W −1 in the visible–near‐infrared regime, while antenna‐enhanced coupling extends detection into the terahertz range with microsecond transients, 10 kHz bandwidth, and a minimum noise‐equivalent power of 26 pW·Hz −1/2 . A built‐in potential of 115 meV, originating from the Type‐II band alignment, plays a dual role by ensuring highly efficient carrier separation in the short‐wavelength band and driving a strong photothermoelectric effect in the terahertz regime. The synergistic interfacial response allows further implementation of reconfigurable logic operations and dual‐channel ASCII data transmission using visible and terahertz signals as independent carriers, highlighting its potential for anti‐jamming communication and multifunctional photonic systems.
- 26 February 2026
- Published by Wiley in Advanced Science
- Vol. 13 (20) , e20919
Open AccessInterfacial Synergy in a Band‐Aligned Low‐Dimensional Heterojunction Toward Broadband Photodetection
Monolithic integration of sensing, imaging, and communication from visible to terahertz bands on a single chip remains challenging as efficient detection across such disparate energies demands stringent, often incompatible material properties. However, conventional semiconductors suffer from intrinsic bandgap limitations or require cryogenic cooling, while existing low‐dimensional heterojunctions often struggle to synergize multiband response kinetics and suppress interfacial carrier recombination. Here, we demonstrate a band‐aligned low‐dimensional heterojunction based on Ta 2 NiSe 5 and Sb 2 Te 3 that leverages interfacial synergy to unify complementary photoresponse pathways, thereby enabling ultrabroadband and low‐noise photodetection spanning across visible to terahertz regimes. The device delivers stable responsivities of up to 0.19 A·W −1 in the visible–near‐infrared regime, while antenna‐enhanced coupling extends detection into the terahertz range with microsecond transients, 10 kHz bandwidth, and a minimum noise‐equivalent power of 26 pW·Hz −1/2 . A built‐in potential of 115 meV, originating from the Type‐II band alignment, plays a dual role by ensuring highly efficient carrier separation in the short‐wavelength band and driving a strong photothermoelectric effect in the terahertz regime. The synergistic interfacial response allows further implementation of reconfigurable logic operations and dual‐channel ASCII data transmission using visible and terahertz signals as independent carriers, highlighting its potential for anti‐jamming communication and multifunctional photonic systems.
- 18 February 2026
- Published by Wiley in Laser & Photonics Reviews
- Vol. 20 (13)
Metasurface‐Engineered Topological WTe 2 Metadevices for High‐Performance Room‐Temperature Sensing
Terahertz (THz) detection underpins emerging technologies ranging from 6G wireless communication to security screening and ultrafast spectroscopy, requiring devices that deliver high sensitivity, broad bandwidth, and room‐temperature operation. However, conventional THz detection, spanning photonic, electronic, and thermal approaches, suffers respectively from quantum noise and weak absorption at hν < k B T , from carrier transit‐time limitations, and from thermal‐fluctuation noise with slow relaxation, preventing the co‐optimization of zero‐bias operation, bandwidth, and speed. Here, we design a topological metadevice that combines the intrinsic topological quantum properties of type‐II Weyl semimetal WTe 2 with geometrically tailored plasmonic T‐shaped microantennas to achieve dramatically enhanced zero‐bias THz photoresponse. Crucially, the designed asymmetric metadevice architecture simultaneously induces strong local electromagnetic‐field enhancement and macroscopic inversion‐symmetry breaking, thereby amplifying Berry‐curvature–driven nonlinear photoresponse. Experimentally, in direct detection mode, the device exhibits a zero‐bias responsivity exceeding 10 A/W, a noise‐equivalent power (NEP) of 3 pW·Hz −1/2 at 0.3 THz, and a temporal response on the order of 120 ns. In the same platform configured for heterodyne detection, it operates as a broadband terahertz mixer with high intermediate‐frequency (IF) bandwidth of ±26 GHz and −20 dB conversion efficiency.
- 18 February 2026
- Published by Wiley in Laser & Photonics Reviews
- Vol. 20 (13)
Metasurface‐Engineered Topological WTe 2 Metadevices for High‐Performance Room‐Temperature Sensing
Terahertz (THz) detection underpins emerging technologies ranging from 6G wireless communication to security screening and ultrafast spectroscopy, requiring devices that deliver high sensitivity, broad bandwidth, and room‐temperature operation. However, conventional THz detection, spanning photonic, electronic, and thermal approaches, suffers respectively from quantum noise and weak absorption at hν < k B T , from carrier transit‐time limitations, and from thermal‐fluctuation noise with slow relaxation, preventing the co‐optimization of zero‐bias operation, bandwidth, and speed. Here, we design a topological metadevice that combines the intrinsic topological quantum properties of type‐II Weyl semimetal WTe 2 with geometrically tailored plasmonic T‐shaped microantennas to achieve dramatically enhanced zero‐bias THz photoresponse. Crucially, the designed asymmetric metadevice architecture simultaneously induces strong local electromagnetic‐field enhancement and macroscopic inversion‐symmetry breaking, thereby amplifying Berry‐curvature–driven nonlinear photoresponse. Experimentally, in direct detection mode, the device exhibits a zero‐bias responsivity exceeding 10 A/W, a noise‐equivalent power (NEP) of 3 pW·Hz −1/2 at 0.3 THz, and a temporal response on the order of 120 ns. In the same platform configured for heterodyne detection, it operates as a broadband terahertz mixer with high intermediate‐frequency (IF) bandwidth of ±26 GHz and −20 dB conversion efficiency.
- Open Access
- 2 February 2026
- Published by Springer Nature in Light: Science & Applications
- Vol. 15 (1) , 100
Polarization-sensitive neuromorphic vision sensing enabled by pristine black arsenic-phosphorus
Polarization-sensitive neuromorphic vision sensing excels in distinguishing light polarization states, offering intrinsic advantages in reducing glare and enhancing visual clarity in complex lighting environments, enabling advanced applications in autonomous driving, optical communication, and bioinspired imaging across the visible-to-infrared spectrum. Here, we present a polarization-sensitive neuromorphic phototransistor based on a high-quality, intrinsically anisotropic two-dimensional black arsenic-phosphorus nanosheet, which exhibits exceptional optoelectronic performance with a peak responsivity of 2.88 A W -1 , a polarization ratio of 4.7 and a dynamic range of 40 dB within the near-infrared communication band. Through multidimensional input control, including polarization and gate voltage, the phototransistor successfully simulates synaptic behaviors analogous to human neural responses to visual stimuli, with paired-pulse facilitation values reaching 201%. Critically, the device demonstrates gate-tunable short-term plasticity, with optical persistence triggering stable long-term plasticity states that underpin memory consolidation. The neuromorphic properties enable the development of a hybrid optical-electronic neural network which achieves a classification accuracy of over 90% on the Fashion-MNIST dataset and a reconstruction accuracy of 71.38% using data from the Yale Face Database under 0º linear polarization. We demonstrate a polarization-resolved imaging approach utilizing the black arsenic-phosphorus phototransistor to reconstruct hidden targets with high fidelity through Stokes parameter extraction and degree of linear polarization mapping, revealing intricate polarization features invisible to conventional imaging systems. Our work establishes a foundational platform for high-performance neuromorphic vision systems with integrated polarization imaging, computation, and communication functionalities, addressing critical challenges in scalable brain-inspired optoelectronic technologies.
- 2 February 2026
- Published by Springer Nature in Light: Science & Applications
- Vol. 15 (1) , 100
Open AccessPolarization-sensitive neuromorphic vision sensing enabled by pristine black arsenic-phosphorus
Polarization-sensitive neuromorphic vision sensing excels in distinguishing light polarization states, offering intrinsic advantages in reducing glare and enhancing visual clarity in complex lighting environments, enabling advanced applications in autonomous driving, optical communication, and bioinspired imaging across the visible-to-infrared spectrum. Here, we present a polarization-sensitive neuromorphic phototransistor based on a high-quality, intrinsically anisotropic two-dimensional black arsenic-phosphorus nanosheet, which exhibits exceptional optoelectronic performance with a peak responsivity of 2.88 A W -1 , a polarization ratio of 4.7 and a dynamic range of 40 dB within the near-infrared communication band. Through multidimensional input control, including polarization and gate voltage, the phototransistor successfully simulates synaptic behaviors analogous to human neural responses to visual stimuli, with paired-pulse facilitation values reaching 201%. Critically, the device demonstrates gate-tunable short-term plasticity, with optical persistence triggering stable long-term plasticity states that underpin memory consolidation. The neuromorphic properties enable the development of a hybrid optical-electronic neural network which achieves a classification accuracy of over 90% on the Fashion-MNIST dataset and a reconstruction accuracy of 71.38% using data from the Yale Face Database under 0º linear polarization. We demonstrate a polarization-resolved imaging approach utilizing the black arsenic-phosphorus phototransistor to reconstruct hidden targets with high fidelity through Stokes parameter extraction and degree of linear polarization mapping, revealing intricate polarization features invisible to conventional imaging systems. Our work establishes a foundational platform for high-performance neuromorphic vision systems with integrated polarization imaging, computation, and communication functionalities, addressing critical challenges in scalable brain-inspired optoelectronic technologies.